AOD405 P-Channel Enhancement Mode Field Effect Transistor
|
|
- Dana Allison
- 5 years ago
- Views:
Transcription
1 Jan 4 P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features V DS (V) = -V I D = -18A R DS(ON) < 32mΩ (V GS = V) R DS(ON) < 6mΩ (V GS = V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol V DS V GS Maximum - ± Continuous Drain T A =25 C G -18 Current B,G T A = C B I D -18 Pulsed Drain Current Avalanche Current C I DM I AR Repetitive avalanche energy L=.1mH C E AR 16 T C =25 C 6 Power Dissipation B P D T C = C T A =25 C 2.5 P DSM Power Dissipation A T A =7 C 1.6 Junction and Storage Temperature Range T J, T STG -55 to 175 Units V V A A mj W W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t s C/W R Maximum Junction-to-Ambient A θja Steady-State 4 5 C/W Maximum Junction-to-Case C Steady-State R θjl C/W
2 Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =-25µA, V GS =V - V I DSS Zero Gate Voltage Drain Current V DS =-24V, V GS =V -1 T J =55 C -5 µa I GSS Gate-Body leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =-25µA V I D(ON) On state drain current V GS =-V, V DS =-5V -4 A V GS =-V, I D =-18A R DS(ON) Static Drain-Source On-Resistance T J =125 C mω V GS =-4.5V, I D =-A 41 6 mω g FS Forward Transconductance V DS =-5V, I D =-18A 17 S V SD Diode Forward Voltage I S =-1A,V GS =V V I S Maximum Body-Diode Continuous Current -18 A DYNAMIC PARAMETERS C iss Input Capacitance 9 1 pf C oss Output Capacitance V GS =V, V DS =-15V, f=1mhz 19 pf C rss Reverse Transfer Capacitance 122 pf R g Gate resistance V GS =V, V DS =V, f=1mhz Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge (V) nc Q g (4.5V) Total Gate Charge (4.5V) 9.7 nc V GS =-V, V DS =-15V, I D =-18A Q gs Gate Source Charge 2.54 nc Q gd Gate Drain Charge 5.4 nc t D(on) Turn-On DelayTime 7.8 ns t r Turn-On Rise Time V GS =-V, V DS =-15V, R L =.82Ω, 8.7 ns t D(off) Turn-Off DelayTime R GEN =3Ω 17.7 ns t f Turn-Off Fall Time 8.5 ns t rr Body Diode Reverse Recovery Time I F =-18A, di/dt=a/µs ns Q rr Body Diode Reverse Recovery Charge I F =-18A, di/dt=a/µs 13 nc A: The value of R θja is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The value in any a given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The SOA curve provides a single pulse rating.
3 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -V -6V -5V -4.5V 25 V DS =-5V -4V -I D (A) 15 -I D (A) V 5 V GS =-3V V DS (Volts) Fig 1: On-Region Characteristics C 25 C V GS (Volts) Figure 2: Transfer Characteristics R DS(ON) (mω) V GS =-4.5V V GS =-V I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance V GS =-4.5V I D =-A V GS =-V I D =-18A Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature R DS(ON) (mω) C I D =-18A 125 C V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -I S (A) 1.E+1 1.E+ 1.E-1 1.E-2 1.E-3 1.E-4 1.E-5 1.E C 25 C V SD (Volts) Figure 6: Body-Diode Characteristics
4 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E+1 8.E+ V DS =-15V I D =-18A C iss -V GS (Volts) 6.E+ 4.E+ 2.E+ Capacitance (pf) C oss C rss.e Q g (nc) Figure 7: Gate-Charge Characteristics V DS (Volts) Figure 8: Capacitance Characteristics -I D (Amps).. 1. T J(Max) =15 C, T A =25 C R DS(ON) limited 1s 1ms ms.1s µs µs Power (W) 4 T J(Max) =15 C T A =25 C s DC V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance 1.1 D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =4 C/W Single Pulse In descending order D=.5,.3,.1,.5,.2,.1, single pulse P D T on T Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
5 ALPHA & OMEGA SEMICONDUCTOR, INC. Document No. Version Title PD-115 rev A Package Data Sheet DIMENSION IN MILLIMETERS DIMENSIONS IN INCHES GAUGE PLANE SEATING PLANE SEE DETAIL 'D' A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 MIN NOM. MAX BSC BSC MIN. NOM. MAX BSC..18 BSC DETAIL 'D' SCALE: 1.5X NOTE 1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS 2. DIMENSION L IS MEASURED IN GAGE PLANE 3. TOLERANCE. mm UNLESS OTHERWISE SPECIFIED 4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT. 5. FOLLOWED FROM JEDEC TO-252 (AA) PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN D 4 5 F A Y W L T NOTE: D45 F&A Y W L T - AOS LOGO - PART NUMBER CODE. -FOUNDRY AND ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE DPAK PART NO. CODE PART NO. CODE D45 UNIT: mm
6 ALPHA & OMEGA SEMICONDUCTOR, INC. TO-252 (DPAK) Tape and Reel Data TO-252 (DPAK) Carrier Tape TO-252 (DPAK) Reel TO-252 (DPAK) Leader / Trailer & Orientation
AOD436 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The AOD436 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is
More informationAO3408 N-Channel Enhancement Mode Field Effect Transistor
August 2 AO348 N-Channel Enhancement Mode Field Effect Transistor General Description The AO348 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages
More informationAO3401 P-Channel Enhancement Mode Field Effect Transistor
July 2 AO34 P-Channel Enhancement Mode Field Effect Transistor General Description The AO34 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages
More informationAO6801 Dual P-Channel Enhancement Mode Field Effect Transistor
May 22 AO68 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO68 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable
More informationAOP608 Complementary Enhancement Mode Field Effect Transistor
AOP68 Complementary Enhancement Mode Field Effect Transistor General Description The AOP68 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More informationAO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a
More informationAOL1422 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is ESD protected and
More informationAO6401 P-Channel Enhancement Mode Field Effect Transistor
July AO64 P-Channel Enhancement Mode Field Effect Transistor General escription The AO64 uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as
More informationAOD404 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally suited
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested
3V NChannel MOSFET General Description The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is suitable for use as a high
More informationAOD4132 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD43 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is ideally
More informationAOE V Dual Asymmetric N-Channel AlphaMOS
AOE693 3V Dual Asymmetric N-Channel AlphaMOS General Description Bottom Source Technology Very Low R DS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary Q Q V
More informationAOD414 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD44 uses advanced trench technology to provide excellent R DS(ON), shootthrough immunity and body diode characteristics. This
More informationAOD454A N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent thermal
More informationAO4433 P-Channel Enhancement Mode Field Effect Transistor
PChannel Enhancement Mode Field Effect Transistor General Description The AO4433 uses advanced trench technology to provide excellent R DS(ON) and ultralow low gate charge with a 25V gate rating. This
More informationP-Channel Enhancement Mode Field Effect Transistor
Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
More informationAOL1414 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOL44 uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally
More informationTop View DFN5X6D PIN1 V DS V GS I D I DM I DSM I AS. 100ns V SPIKE 31 P D 12 P DSM. Junction and Storage Temperature Range T J, T STG
AON697 3V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS (on) at 4.5V GS Low Gate Charge High Current Capability RoHS and Halogen-Free
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested SOIC-8 D1. Top View. S2 Pin1
V Dual NChannel MOSFET General Description The AO89 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =7V) 100% UIS Tested 100% R g Tested
AOD444 V NChannel MOSFET General Description The AOD444 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON).This device is ideal for boost converters
More informationV DS. 100% UIS Tested 100% R g Tested. Top View S2 G2 S1 G1
3V AO48 Dual PChannel MOSFET General Description The AO48 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS
AON6A 3V NChannel MOSFET General Description The AON6A uses advanced trench technology to provide excellent R DS(ON), low gate charge.this device is suitable for use as a high side switch in SMPS and general
More informationV DS. 100% UIS Tested 100% R g Tested. Symbol. Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C V GS I DM T A =25 C I D
V NChannel MOSFET General Description The combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON).This device is ideal for boost converters and synchronous
More informationAON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description
AON582B CommonDrain Dual NChannel Enhancement Mode Field Effect Transistor General Description Features The AON582B/L uses advanced trench technology to provide excellent R DS(ON), low gate charge and
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View
AON648 V NChannel MOSFET General Description The AON648 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for boost converters
More informationAON7400A 30V N-Channel MOSFET
AON74A 3V NChannel MOSFET General Description The AON74A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is suitable for use as a
More informationAOTF409 P-Channel Enhancement Mode Field Effect Transistor
AOTF49 PChannel Enhancement Mode Field Effect Transistor General Description The AOTF49/L uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. With the
More informationAOD2910E 100V N-Channel MOSFET
AOD29E V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge ESD protected Optimized for fastswitching applications Product Summary V DS I D (at V GS =V)
More informationAON7422E 30V N-Channel MOSFET
AON7E 3V NChannel MOSFET General Description The AON7E combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and
More informationV DS I D (at V GS =-4.5V) -50A R DS(ON) (at V GS =-1.5V) 100% UIS Tested 100% R g Tested. DFN 3.3x3.3 EP D. Symbol V Gate-Source Voltage V GS I D
AON73 V PChannel MOSFET General Description The AON73 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and
More informationTop View S1 G1 S2 G2. Orderable Part Number Package Type Form Minimum Order Quantity AO4630 SO-8 Tape & Reel Symbol V DS ±12 V GS I D
3V Complementary MOSFET General Description AO463 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for
More informationAOD V N-Channel MOSFET
V NChannel MOSFET General Description The AOD4 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.power losses are minimized due
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View
AON V NChannel MOSFET General Description The AON uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching
More informationV DS. 100% UIS Tested 100% R g Tested. Top View V GS -200 T A =25 C T A =70 C I DM I DSM I AS E AS P D P DSM T J, T STG
AON7 3V PChannel MOSFET General Description The AON7 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and
More informationAO4430 N-Channel Enhancement Mode Field Effect Transistor
AO443 NChannel Enhancement Mode Field Effect Transistor General Description The AO443/L uses advanced trench technology to provide excellent R DS(ON), shootthrough immunity, body diode characteristics
More informationAO7801 Dual P-Channel Enhancement Mode Field Effect Transistor
AO78 Dual PChannel Enhancement Mode Field Effect Transistor General Description The AO78 uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages
More informationAOT2618L/AOB2618L/AOTF2618L
AOT68L/AOB68L/AOTF68L 6V NChannel MOSFET General Description The AOT68L & AOB68L & AOTF68L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching
More informationV DS I D (at V GS =-4.5V) R DS(ON) (at V GS =-1.8V) D1 G2 Bottom
2V Dual PChannel MOSFET General Description The AON283 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltage as low as.8v. This device is suitable
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested
AOD9 V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos MV) technology Very Low R DS(ON) Low Gate Charge Optimized for fastswitching applications RoHS and HalogenFree Compliant
More informationV DS. Pin 1 G1 D2. Maximum Drain-Source Voltage -12 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C V GS I D I DM P D
AON289 2V Dual PChannel MOSFET General Description The AON289 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationAONS V N-Channel AlphaSGT TM
AONS9 V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge Optimized for fastswitching applications RoHS and HalogenFree Compliant Product Summary
More informationAON V N-Channel MOSFET
AON659 4V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Optimized for fastswitching applications RoHS and HalogenFree Compliant Product Summary V DS
More informationAOW V N-Channel MOSFET
AOW5 5V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Optimized for fastswitching applications Product Summary V DS I D (at V GS =V) R DS(ON) (at V
More informationAON V N-Channel MOSFET
AON6 V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS =.5V) V A
More informationAON7264E 60V N-Channel AlphaSGT TM
6V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge ESD protected Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS
More informationI D (at V GS =-4.5V) -4A R DS(ON) (at V GS = -1.8V) ESD protected V DS V GS -4 I D T A =70 C -3.5 I DM P D T J, T STG. R θjl
2V PChannel MOSFET General Description The AO345 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
More informationAON V P-Channel MOSFET
AON749 3V PChannel MOSFET General Description The AON749 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationTop View. Max n-channel Max p-channel Units Drain-Source Voltage V. Symbol V DS V GS ±12 I DM P D T J, T STG Maximum Junction-to-Lead
3V Complementary MOSFET General Description The AO uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a highspeed power inverter, suitable
More informationAON V P-Channel MOSFET
3V PChannel MOSFET General Description Latest Trench Power MOSFET technology Very Low R DS(ON) at 4.5V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Application System/Load
More informationAONS V N-Channel AlphaSGT TM
AONS66 6V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Level Gate Drive Excellent Gate Charge x R DS(ON) Product (FOM) RoHS and HalogenFree Compliant
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested
V NChannel MOSFET General Description Low R DS(ON) Optimized for Load Switch High Current Capability ESD Protected RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS
More informationV DS D1/D2 V GS I D I DM P DSM W. T A =70 C 1 Junction and Storage Temperature Range T J, T STG
AON58B 3V CommonDrain Dual NChannel MOSFET General Description The AON58B uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v while
More informationAO V Complementary MOSFET
AO 3V Complementary MOSFET General Description The AO uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a highspeed power inverter, suitable
More informationSymbol Drain-Source Voltage -30 Gate-Source Voltage Continuous Drain T A =25 C T A =70 C Pulsed Drain Current C V DS V GS
3V PChannel EnhancementMode MOSFET LP347LT1G V DS 3V I D (V GS = V) 4.1A R DS(ON) (V GS = V) < 7mΩ R DS(ON) (V GS = 4.5V) < m Ω 1 3 2 FEATURES The LP347LT1G uses advanced trench technology to provide excellent
More informationAOD4132 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The OD3 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is ideally
More informationAO882 Electrical Characteristics (T J =2 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource
AO882 2V CommonDrain Dual NChannel MOSFET General Description The AO882 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.8v while
More informationGate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2
N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationWPM3407 WPM3407. Description. Features. Application. Order information V (BR)DSS. R DS(on) Typ V V 30 V
WPM347 Single P-Channel, Description -3 V, -4.4A,Power MOSFET The WPM347 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use in DC-DC conversion
More informationAO4407 P-Channel Enhancement Mode Field Effect Transistor
June 22 AO447 P-Channel Enhancement Mode Field Effect Transistor General escription The AO447 uses advanced trench technology to provide excellent R (ON), and ultra-low low gate charge with a 25V gate
More informationI D (at V GS =10V) 2.8A. R DS(ON) (at V GS =10V) < 4.8Ω. 100% UIS Tested! 100% R g Tested!
AODN8 8V,.8A NChannel MOSFET General Description The AODN8 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular
More informationAOL1454G 40V N-Channel AlphaSGT TM
V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Level Driving Excellent Gate Charge x R DS(ON) Product (FOM) RoHS and HalogenFree Compliant Product Summary
More informationAOTL V N-Channel AlphaSGT TM
AOTL664 4V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at
More informationTaiwan Goodark Technology Co.,Ltd TGD0103M
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationUNISONIC TECHNOLOGIES CO., LTD UT4422
UNISONIC TECHNOLOGIES CO., LTD UT4422 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4422 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation
More informationAOT428 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The OT uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for
More informationAOI472 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description Features The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable
More informationAONE V Dual Asymmetric N-Channel MOSFET
AONE363 5V Dual Asymmetric NChannel MOSFET General Description Bottom Source Technology Very Low R DS(ON) High Current Capability RoHS and HalogenFree Compliant Product Summary Q Q V DS 5V 5V I D (at V
More informationAOTF5N50FD. 500V, 5A N-Channel MOSFET with Fast Recovery Diode. V DS I D (at V GS =10V) R DS(ON) (at V GS =10V)
5V, 5A NChannel MOSFET with Fast Recovery Diode General Description The AOTF5N5FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance
More informationAOTF7N60FD. 600V, 7A N-Channel MOSFET with Fast Recovery Diode. V DS I D (at V GS =10V)
6V, 7A NChannel MOSFET with Fast Recovery Diode General Description The AOTF7N6FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance
More informationAONS V N-Channel MOSFET
AONS3634 3V N-Channel MOSFET General Description Trench Power MOSFET technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary V DS I D (at V GS =V)
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationUNISONIC TECHNOLOGIES CO., LTD UTD408
UNISONIC TECHNOLOGIES CO., LTD UTD408 N-CHANNEL ENHANCEMENT MODE FEATURES * R DS(ON) < 18 mω @ V GS =10V, I D =18A R DS(ON) < 27 mω @ V GS =4.5V, I D =10A * Low capacitance * Optimized gate charge * Fast
More informationSSF6014D 60V N-Channel MOSFET
Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology
More informationMDS9652E Complementary N-P Channel Trench MOSFET
MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,
More informationAOT12N60FD/AOB12N60FD/AOTF12N60FD
6V, A NChannel MOSFET General Description The have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC DC applications.
More informationAOT12N65/AOTF12N65/AOB12N65
AOT2N65/AOTF2N65/AOB2N65 65V, 2A NChannel MOSFET General Description The AOT2N65 & AOTF2N65 & AOB2N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high
More informationAOW10T60P/AOWF10T60P 600V,10A N-Channel MOSFET
AOWT6P/AOWFT6P 6V,A NChannel MOSFET General Description Trench Power AlphaMOSII technology Low R DS(ON) Low Ciss and Crss High Current Capability RoHS and Halogen Free Compliant Product Summary V DS @
More informationAOD407 P-Channel Enhancement Mode Field Effect Transistor
AO47 PChannel Enhancement Mode Field Effect Transistor General escription The AO47 uses advanced trench technology to provide excellent R S(ON), low gate charge and low gate resistance. With the excellent
More informationUNISONIC TECHNOLOGIES CO., LTD UT4411
UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationUNISONIC TECHNOLOGIES CO., LTD UT4413
UNISONIC TECHNOLOGIES CO., LTD UT4413 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4413 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationYJG80G06A. N-Channel Enhancement Mode Field Effect Transistor
RoHS COMPLIANT Top View N-Channel Enhancement Mode Field Effect Transistor PDFN 5X6 8L Bottom View Product Summary V DS I D (at V GS =10V) R DS(ON) ( at V GS =10V) R DS(ON) ( at V GS =4.5V) 100% UIS Tested
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 100% UIS Tested 100% R g Tested. TO-262F Bottom View. Top View G D S S G. Symbol
AOWN65/AOWFN65 65V,A NChannel MOSFET General Description The AOWN65/AOWFN65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness
More informationAO4728L N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor RFET TM General Description Features RFET TM uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON),and
More informationPE2302C. N-Channel Enhancement Mode Power MOSFET 2302C DESCRIPTION GENERAL FEATURES. Application. Page 1
N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE30C uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6.5 Amps, 00 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N0 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and
More informationAOD410 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor eneral Description The AOD4 uses advanced trench technology to provide excellent R D(ON) and low gate charge. This device is suitable for use as a load
More informationAOT14N50/AOB14N50/AOTF14N50
AOT4N5/AOB4N5/AOTF4N5 5V, 4A NChannel MOSFET General Description The AOT4N5 &AOB4N5 & AOTF4N5 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels
More informationUNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET 8 Amps, -30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT4815 is a P-channel enhancement mode power MOSFET using UTC s advanced trench
More informationTop View. Symbol Max n-channel Max p-channel Units Drain-Source Voltage Symbol
AO668 V Complementary MOSFET General Description The AO668 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
More information600V 37A αmos TM Power Transistor. V T j,max I DM. 100% UIS Tested 100% R g Tested S G G AOB42S60L
AOT42S6L/AOB42S6L 6V 37A αmos TM Power Transistor General Description The AOT42S6L & AOB42S6L have been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels
More information600V 39A α MOS TM Power Transistor. V T j,max I DM. Symbol V DS V GS I D I AR E AR E AS P D. dv/dt T J, T STG T L
AOTF42S6 6V 39A α MOS TM Power Transistor General Description The AOTF42S6 have been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels of performance and
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.51Ω. 100% UIS Tested 100% R g Tested. Top View TO-220F. Symbol
AOT3N5/AOTF3N5 5V, 3A NChannel MOSFET General Description The AOT3N5 & AOTF3N5 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance
More informationP-Channel Enhancement Mode Power MOSFET
DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
More informationAOTF9N V, 9A N-Channel MOSFET. V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 1.3Ω
9, 9A NChannel MOSFET General Description The AOTF9N9 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationUNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF7476 is a N-channel Power MOSFET, it uses UTC s advanced technology to provide the customers
More informationMDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ
MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance
More informationV T j,max. I DM R DS(ON),max < 0.19Ω Q g,typ E 400V. 100% UIS Tested 100% R g Tested G D S S. Package Type TO-220F Green.
AOTF9A6L 6V, 2A αmos5 TM Power Transistor General Description Proprietary αmos5 TM technology Low R DS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.37Ω. 100% UIS Tested 100% R g Tested TO-220F. Symbol
6V,2A NChannel MOSFET General Description The FQP2N6 & FQPF2N6 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in
More information