AO6401 P-Channel Enhancement Mode Field Effect Transistor

Transcription

1 July AO64 P-Channel Enhancement Mode Field Effect Transistor General escription The AO64 uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as low as.5v. This device is suitable for use as a load switch or in PWM applications. Features V S (V) = -3V I = -5 A R S(ON) < 49mΩ (V GS = -V) R S(ON) < 64mΩ (V GS = -4.5V) R S(ON) < 9mΩ (V GS = -.5V) TSOP6 Top View G S G S Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter rain-source Voltage Gate-Source Voltage Symbol V S V GS Maximum -3 ± Continuous rain T A =5 C -5 Current A T A =7 C I -4. Pulsed rain Current B I M -3 T A =5 C P Power issipation A T A =7 C.44 Junction and Storage Temperature Range T J, T STG -55 to 5 Units V V A W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t s C/W R θja Maximum Junction-to-Ambient A Steady-State 74 C/W Maximum Junction-to-Lead C Steady-State R θjl 37 5 C/W Alpha & Omega Semiconductor, Ltd.

2 AO64 Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV SS rain-source Breakdown Voltage I =-5µA, V GS =V -3 V I SS Zero Gate Voltage rain Current V S =-4V, V GS =V - T J =55 C -5 µa I GSS Gate-Body leakage current V S =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V S =V GS I =-5µA V I (ON) On state drain current V GS =-4.5V, V S =-5V -5 A V GS =-V, I =-5A R S(ON) 4 49 T J =5 C 74 mω mω 8 9 mω Static rain-source On-Resistance V GS =-4.5V, I =-4A V GS =-.5V, I =-A g FS Forward Transconductance V S =-5V, I =-5A 7 S V S iode Forward Voltage I S =-A,V GS =V V I S Maximum Body-iode Continuous Current -3 A YNAMIC PARAMETERS C iss Input Capacitance 943 pf C oss Output Capacitance V GS =V, V S =-5V, f=mhz 8 pf C rss Reverse Transfer Capacitance 73 pf R g Gate resistance V GS =V, V S =V, f=mhz 6 Ω SWITCHING PARAMETERS Q g Total Gate Charge 9.5 nc Q gs Gate Source Charge V GS =-4.5V, V S =-5V, I =-5A. nc Q gd Gate rain Charge.9 nc t (on) Turn-On elaytime 6 ns t r Turn-On Rise Time V GS =-V, V S =-5V, R L =3Ω, 3 ns t (off) Turn-Off elaytime R GEN =6Ω 4 ns t f Turn-Off Fall Time ns t rr Body iode Reverse Recovery Time I F =-5A, di/dt=a/µs. ns Q rr Body iode Reverse Recovery Charge I F =-5A, di/dt=a/µs.8 nc A: The value of R θja is measured with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =5 C. The value in any a given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient.. The static characteristics in Figures to 6,,4 are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =5 C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd.

3 AO64 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 5 -V -4.5V 8 V S =-5V -3V 5 6 -I (A) -.5V -I (A) 4 5 C 5 V GS =-V 5 C V S (Volts) Fig : On-Region Characteristics V GS (Volts) Figure : Transfer Characteristics.6 I =-5A R S(ON) (mω) V GS =-.5V V GS =-4.5V V GS =-V Normalized On-Resistance.4. V GS =-4.5V V GS =-V V GS =-.5V I =-A I (A) Figure 3: On-Resistance vs. rain Current and Gate Voltage Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature R S(ON) (mω) C I =-A 5 C V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -I S (A).E+.E+.E-.E-.E-3.E-4.E-5 5 C 5 C.E V S (Volts) Figure 6: Body-iode Characteristics Alpha and Omega Semiconductor, Ltd.

4 AO64 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 5 4 V S =-5V I =-5A 4 -V GS (Volts) 3 Capacitance (pf) C oss C rss C iss Q g (nc) Figure 7: Gate-Charge Characteristics V S (Volts) Figure 8: Capacitance Characteristics -I (Amps).... T J(Max) =5 C T A =5 C R S(ON) limited s s.s C µs ms ms µs. -V S (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power (W) 4 3 T J(Max) =5 C T A =5 C... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance. =T on /(T on +T off ) T J,PK =T A +P M.Z θja.r θja R θja =6.5 C/W In descending order =.5,.3,.,.5,.,., single pulse Single Pulse Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance P T on T off Alpha & Omega Semiconductor, Ltd.

5 ALPHA & OMEGA SEMICONUCTOR, INC. TSOP-6 Package ata θ SYMBOLS A. A. A. b.35 c..7 E.6 E.6 e e L.37 θ IMENSIONS IN MILLIMETERS MIN NOM MAX BSC.9 BSC 5 8 GAUGE PLANE SEATING PLANE NOTE:. LEA FINISH: 5 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLER) PLATE ON LEA. TOLERANCE ±. mm (4 mil) UNLESS OTHERWISE SPECIFIE 3. COPLANARITY :. mm 4. IMENSION L IS MEASURE IN GAGE PLANE PACKAGE MARKING ESCRIPTION RECOMMENE LAN PATTERN TSOP-6 PART NO. COE PART NO. AO64 AO64 COE NOTE: P N - PART NUMBER COE. - YAER AN WEEK COE. L N - ASSEMBLY LOT COE, FAB AN ASSEMBLY LOCATION COE.

6 ALPHA & OMEGA SEMICONUCTOR, INC. TSOP-6 Tape and Reel ata TSOP-6 Carrier Tape TSOP-6 Reel TSOP-6 Tape Leader / Trailer & Orientation