AON V P-Channel MOSFET

Transcription

1 2V PChannel MOSFET General escription The AON447 uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for use as a load switch. Features V S (V) = 2V I = 9 A (V GS = 4.5V) R S(ON) < 2mΩ (V GS = 4.5V) R S(ON) < 25mΩ (V GS = 2.5V) R S(ON) < 3mΩ (V GS =.8V) ES Protected Top View FN 3x2 Bottom View Pin G S G Rg S Absolute Maximum Ratings unless otherwise noted Parameter Symbol Maximum rainsource Voltage 2 GateSource Voltage Continuous rain Current Pulsed rain Current C Power issipation B T A =7 C T A =7 C Junction and Storage Temperature Range V S V GS I M T J, T STG Thermal Characteristics Parameter Symbol Typ Max Maximum JunctiontoAmbient A t s 42 5 Maximum JunctiontoAmbient A R θja Steady State 74 9 Maximum JunctiontoLead Steady State R θjl 25 I P ± to 5 Units V V A W C Units

2 Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV SS rainsource Breakdown Voltage I =25µA, V GS =V 2 V V S =2V, V GS =V I SS Zero Gate Voltage rain Current µa T J =55 C 5 I GSS GateBody leakage current V S =V, V GS =±8V ± µa V GS(th) Gate Threshold Voltage V S =V GS I =25µA V I (ON) On state drain current V GS =4.5V, V S =5V 6 A R S(ON) Static rainsource OnResistance T J = mω 24 3 mω mω g FS Forward Transconductance V S =5V, I =9A 45 S V S iode Forward Voltage I S =A,V GS =V.53 V I S Maximum Bodyiode Continuous Current 2.5 A YNAMIC PARAMETERS C iss Input Capacitance 74 2 pf C oss Output Capacitance V GS =V, V S =6V, f=mhz 334 pf C rss Reverse Transfer Capacitance 2 pf R g Gate resistance V GS =V, V S =V, f=mhz.3.7 kω SWITCHING PARAMETERS Q g Total Gate Charge 9 23 nc Q gs Gate Source Charge V GS =4.5V, V S =6V, I =9A 4.5 nc Q gd Gate rain Charge 5.3 nc t (on) TurnOn elaytime 24 ns t r TurnOn Rise Time V GS =4.5V, V S =6V, R L =.67Ω, 58 ns t (off) TurnOff elaytime R GEN =3Ω 7 µs t f TurnOff Fall Time 4.2 µs t rr Body iode Reverse Recovery Time I F =9A, di/dt=a/µs ns Q rr Body iode Reverse Recovery Charge I F =9A, di/dt=a/µs 7 nc COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS ARE NOT AUTHORIZE. AOS OES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PROUCTS. AOS RESERVES THE RIGHT TO IMPROVE PROUCT ESIGN, FUNCTIONS AN RELIABILITY WITHOUT NOTICE. V GS =4.5V, I =9A V GS =2.5V, I =8.5A V GS =.8V, I =7.5A V GS =.5V, I =7A A. The value of R θja is measured with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T J(MAX) =5 C, using s junctiontoambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C. Ratings are based on low frequency and duty cycles to keep initial T J =.. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. E. The static characteristics in Figures to 6 are obtained using <µs pulses, duty cycle.5% max. F. These curves are based on the junctiontoambient thermal impedence which is measured with the device mounted on in 2 FR4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. Rev : June 29 mω

3 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS V 3V 2.5V 5 V S =5V I (A) 4 2V I (A) V GS =.5V V S (Volts) Figure : OnRegion Characteristics(Note E) V GS (Volts) Figure 2: Transfer Characteristics(Note E) R S(ON) (mω) V GS =2.5V V GS =.5V V GS =.8V 5 V GS =4.5V I2 F =6.5A, 4 6 di/dt=a/µs 8 2 I (A) Figure 3: OnResistance vs. rain Current and Gate Voltage(Note E) Normalized OnResistance V GS =4.5V I =9A V GS =.5V I =7A V GS =.8V I =7.5A Temperature ( C) Figure 4: OnResistance vs. Junction Temperature(Note E) R S(ON) (mω) I =9A E2 THIS PROUCT 25 HAS BEEN ESIGNE AN QUALIFIE FOR THE CONSUMER E3 MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS 2 IN LIFE SUPPORT EVICES OR SYSTEMS ARE NOT AUTHORIZE. AOS OES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PROUCTS. AOS RESERVES E4 5 THE RIGHT TO IMPROVE PROUCT ESIGN, FUNCTIONS AN RELIABILITY WITHOUT NOTICE. E V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage(Note E) I S (A) E E E V S (Volts) Figure 6: Bodyiode Characteristics(Note E)

4 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS V GS (Volts) V S =6V I =9A Q g (nc) Figure 7: GateCharge Characteristics Capacitance (pf) C rss C oss C iss V S (Volts) Figure 8: Capacitance Characteristics I (Amps). R S(ON) limited T J(Max) =5 C C µs ms ms ms s. I F =6.5A, di/dt=a/µs.. V S (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Power (W) T J(Max) =5 C... Pulse Width (s) Figure : Single Pulse Power Rating JunctiontoAmbient (Note F) Z θja Normalized Transient Thermal Resistance =T on /T T J,PK =T A P M.Z θja.r θja R θja =9. THIS PROUCT HAS BEEN ESIGNE AN QUALIFIE FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS ARE NOT AUTHORIZE. AOS OES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH.APPLICATIONS OR USES OF ITS PROUCTS. AOS RESERVES THE RIGHT TO IMPROVE PROUCT ESIGN, FUNCTIONS AN RELIABILITY WITHOUT NOTICE. Single Pulse In descending order =.5,.3,.,.5,.2,., single pulse Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance(Note F) P T on T

5 Gate Charge Test Circuit & Waveform Qg VC UT VC V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & W aveforms ton toff td(on) tr td(off) t f Rg UT VC 9% % iode Recovery Test Circuit & W aveforms UT Q = Idt rr Ig Isd L VC Isd I F di/dt I RM t rr