V DS -20V I D (at V GS =-4.5V) R DS(ON) (at V GS = -1.8V) ESD protected TSOP6 D. Top View. Drain-Source Voltage -20 V
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1 2V PChannel MOSFET General escription The AO649A uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for use as a load switch applications. Product Summary V S 2V I (at V GS =4.V).A R S(ON) (at V GS = 4.V) < 4mΩ R S(ON) (at V GS = 2.V) < mω R S(ON) (at V GS =.8V) < 6mΩ ES protected Top View TSOP6 Bottom View Top View G S G Pin S Absolute Maximum Ratings unless otherwise noted Parameter Symbol Maximum Units rainsource Voltage 2 V Power issipation B V S GateSource Voltage ±8 V Continuous rain Current V GS. I T A =7 C 4 Pulsed rain Current C I M 2. P T A =7 C. Junction and Storage Temperature Range T J, T STG to C Thermal Characteristics Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t s 48 6 C/W R θja Maximum JunctiontoAmbient A SteadyState 7 9 C/W Maximum JunctiontoLead SteadyState 7 4 C/W R θjl A W Rev : Sep 2 Page of
2 Electrical Characteristics (T J =2 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV SS rainsource Breakdown Voltage I =2µA, V GS =V 2 V V S =2V, V GS =V I SS Zero Gate Voltage rain Current µa T J = C I GSS GateBody leakage current V S =V, V GS = ±8V ± µa V GS(th) Gate Threshold Voltage V S =V GS, I =2µΑ..7.9 V I (ON) On state drain current V GS =4.V, V S =V A R S(ON) Static rainsource OnResistance V GS =4.V, I =.A V GS =2.V, I =4A V GS =.8V, I =2A 4 4 T J =2 C mω 2 6 mω g FS Forward Transconductance V S =V, I =.A 2 S V S iode Forward Voltage I S =A,V GS =V.64 V I S Maximum Bodyiode Continuous Current 2 A YNAMIC PARAMETERS C iss Input Capacitance pf C oss Output Capacitance V GS =V, V S =V, f=mhz 8 pf C rss Reverse Transfer Capacitance 48 8 pf R g Gate resistance V GS =V, V S =V, f=mhz 6 2 Ω SWITCHING PARAMETERS Q g Total Gate Charge nc Q gs Gate Source Charge V GS =4.V, V S =V, I =.A.8.2 nc Q gd Gate rain Charge nc t (on) TurnOn elaytime ns t r TurnOn Rise Time V GS =4.V, V S =V, R L =.8Ω, 9 ns t (off) TurnOff elaytime R GEN =Ω 9 ns t f TurnOff Fall Time 29 ns t rr Body iode Reverse Recovery Time I F =.A, di/dt=a/µs ns Q rr Body iode Reverse Recovery Charge I F =.A, di/dt=a/µs 4 62 nc A. The value of R θja is measured with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T J(MAX) = C, using s junctiontoambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) = C. Ratings are based on low frequency and duty cycles to keep initialt J =2 C.. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. E. The static characteristics in Figures to 6 are obtained using <µs pulses, duty cycle.% max. F. These curves are based on the junctiontoambient thermal impedence which is measured with the device mounted on in 2 FR4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX) = C. The SOA curve provides a single pulse rating. mω COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS ARE NOT AUTHORIZE. AOS OES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PROUCTS. AOS RESERVES THE RIGHT TO IMPROVE PROUCT ESIGN, FUNCTIONS AN RELIABILITY WITHOUT NOTICE. Rev : Sep 2 Page 2 of
3 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 4 2 8V 4.V.V 2.V 2 9 V S =V I (A) 2 2.V I (A) 6 V GS =.V 2 C 2 C 2 4 V S (Volts) Fig : OnRegion Characteristics (Note E).. 2 V GS (Volts) Figure 2: Transfer Characteristics (Note E) R S(ON) (mω) V GS =.8V V GS =2.V V GS =4.V Normalized OnResistance I =.A, V GS =4.V I =A, V GS =2.V I =4A, V GS =.8V I (A) Figure : OnResistance vs. rain Current and Gate Voltage (Note E) Temperature ( C) Figure 4: OnResistance vs. Junction Temperature (Note E) 2 I =.A.E.E R S(ON) (mω) C I S (A).E.E2.E 2 C 2 C 4.E4 2 2 C V GS (Volts) Figure : OnResistance vs. GateSource Voltage (Note E).E V S (Volts) Figure 6: Bodyiode Characteristics (Note E) Rev : Sep 2 Page of
4 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 4 V GS (Volts) 4 2 V S =V I =.A Capacitance (pf) C iss 2 C oss Q g (nc) Figure 7: GateCharge Characteristics C rss 2 V S (Volts) Figure 8: Capacitance Characteristics I (Amps)..... R S(ON) limited T J(Max) = C C.. V S (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) µs µs ms ms ms s Power (W) T J(Max) = C... Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note F) Z θja Normalized Transient Thermal Resistance... =T on /T T J,PK =T A P M.Z θja.r θja R θja =9 C/W Single Pulse In descending order =.,.,.,.,.2,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P T on T Rev : Sep 2 Page 4 of
5 Gate Charge Test Circuit & Waveform Qg VC UT VC V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & W aveforms ton toff td(on) tr td(off) t f Rg UT VC 9% % iode Recovery Test Circuit & W aveforms UT Q rr = Idt Ig Isd L V C Isd I F di/dt I RM t rr Rev : Sep 2 Page of
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NChannel MOFET General escription Trench Power M MOFET technology Low R (ON) Low Gate Charge Optimized for fastswitching applications E protected RoH and HalogenFree Compliant Applications ynchronus Rectification
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7V NChannel MOFET eneral escription The uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose
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AO49 NChannel AlphaMO General escription Trench Power AlphaMO (αmo M) technology Low R (ON) Low Gate Charge Optimized for fastswitching applications RoH and HalogenFree Compliant Product ummary I (at G
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AODN8 8V,.8A NChannel MOSFET General Description The AODN8 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular
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