V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 2.6mΩ (< 2.4mΩ ) R DS(ON) (at V GS =6V) < 3.2mΩ (< 3.0mΩ ) 100% UIS Tested 100% R g Tested TO-263

Transcription

1 75V NChannel MOSFET eneral escription The uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R S(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LE backlighting. Product Summary V S I (at V S =V) 75V 4A R S(ON) (at V S =V) <.6mΩ (<.4mΩ ) R S(ON) (at V S =6V) < 3.mΩ (< 3.mΩ ) % UIS Tested % R g Tested Top View TO Bottom Top View TO63 Bottom View S S Absolute Maximum Ratings unless otherwise noted Parameter Symbol Maximum rainsource Voltage 75 atesource Voltage Continuous rain T C =5 C 4 I Current T C = C Pulsed rain Current C Continuous rain Current Avalanche Current C Power issipation B T A =7 C Avalanche energy L=.mH C T C =5 C T C = C Junction and Storage Temperature Range T J, T ST 55 to 75 V S V S I M I SM I AS E AS P. P Power issipation A SM W T A =7 C.3 S ± S S Units V V A A A mj W C Thermal Characteristics Parameter Symbol Typ Maximum JunctiontoAmbient A t s R θja Maximum JunctiontoAmbient A SteadyState 5 Maximum JunctiontoCase SteadyState R θjc.5 * Surface mount package TO63 Max 5.3 Units C/W C/W C/W Rev : ec. Page of 6

2 Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV SS rainsource Breakdown Voltage I =5µA, V S =V 75 V V S =75V, V S =V I SS Zero ate Voltage rain Current µa T J =55 C 5 I SS atebody leakage current V S =V, V S =±V ± na V S(th) ate Threshold Voltage V S =V S I =5µA V I (ON) On state drain current V S =V, V S =5V 5 A R S(ON) Static rainsource OnResistance V S =V, I =A TO.5.6 T J =5 C V S =6V, I =A TO V S =V, I =A.95.4 TO63 T J =5 C V S =6V, I =A TO63 g FS Forward Transconductance V S =5V, I =A 8 S V S iode Forward Voltage I S =A,V S =V.66 V I S Maximum Bodyiode Continuous Current 4 A YNAMIC PARAMETERS C iss Input Capacitance 83 pf C oss Output Capacitance V S =V, V S =37.5V, f=mhz 5 pf C rss Reverse Transfer Capacitance 97 pf R g ate resistance V S =V, V S =V, f=mhz Ω SWITCHIN PARAMETERS Q g Total ate Charge 47 6 nc Q gs ate Source Charge V S =V, V S =37.5V, I =A 38.5 nc Q gd ate rain Charge 3 nc t (on) TurnOn elaytime 3 ns t r TurnOn Rise Time V S =V, V S =37.5V, R L =.9Ω, ns t (off) TurnOff elaytime R EN =3Ω 66 ns t f TurnOff Fall Time 8 ns t rr Body iode Reverse Recovery Time I F =A, di/dt=5a/µs 53 ns Q rr Body iode Reverse Recovery Charge I F =A, di/dt=5a/µs 438 nc A. The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with. The Power dissipation P SM is based on R θja and the maximum allowed junction temperature of 5 C. The value in any given application depends on the user's specific board design, and the maximum temperature of 75 C may be used if the PCB allows it. B. The power dissipation P is based on T J(MAX) =75 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =75 C. Ratings are based on low frequency and duty cycles to keep initial T J =5 C.. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =75 C. The SOA curve provides a single pulse rating.. The maximum current limited by package is 4A. H. These tests are performed with the device mounted on in FR4 board with oz. Copper, in a still air environment with. mω THIS PROUCT HAS BEEN ESINE AN QUALIFIE FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS ARE NOT AUTHORIZE. AOS OES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PROUCTS. AOS RESERVES THE RIHT TO IMPROVE PROUCT ESIN, FUNCTIONS AN RELIABILITY WITHOUT NOTICE. Rev : ec. Page of 6

3 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS V 4.5V V S =5V 8 6V 8 I (A) 4 I (A) 4 5 C 4V 5 C =3.5V V S (Volts) Fig : OnRegion Characteristics (Note E) V S (Volts) Figure : Transfer Characteristics (Note E) 8 R S(ON) (mω) 6 4 V S =6V V S =V Normalized OnResistance V S =V I =A V S =6V I =A I (A) Figure 3: OnResistance vs. rain Current and ate Voltage (Note E) Temperature ( C) Figure 4: OnResistance vs. Junction Temperature (Note E) C I =A.E.E.E R S(ON) (mω) 3 5 C I S (A).E.E.E3.E4 5 C 5 C V S (Volts) Figure 5: OnResistance vs. atesource Voltage (Note E).E V S (Volts) Figure 6: Bodyiode Characteristics (Note E) Rev : ec. Page 3 of 6

4 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 8 V S =37.5V I =A C iss V S (Volts) 6 4 Capacitance (pf) 8 4 C oss C rss Q g (nc) Figure 7: atecharge Characteristics V S (Volts) Figure 8: Capacitance Characteristics.. R S(ON) limited µs µs µs 5 4 T J(Max) =75 C T C =5 C I (Amps)... T J(Max) =75 C T C =5 C C ms ms Power (W) V S (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F).... Figure : Single Pulse Power Rating 8 Junctionto Case (Note F) Z θjc Normalized Transient Thermal Resistance. =T on /T T J,PK =T C P M.Z θjc.r θjc R θjc =.3 C/W Single Pulse 4 In descending order =.5,.3,.,.5,.,., single pulse P T on T Figure : Normalized Maximum Transient Thermal Impedance (Note F) Rev : ec. Page 4 of 6

5 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS I AR (A) Peak Avalanche Current T A =5 C T A = C T A =5 C Power issipation (W) Time in avalanche, t A (µs) Figure : Single Pulse Avalanche capability (Note C) T CASE ( C) Figure 3: Power erating (Note F) 5 Current rating I (A) 9 3 Power (W) T CASE ( C) Figure 4: Current erating (Note F).. Figure 5: Single Pulse Power Rating Junctionto Ambient (Note H) Z θja Normalized Transient Thermal Resistance... =T on /T T J,PK =T A P M.Z θja.r θja R θja = C/W Single Pulse In descending order =.5,.3,.,.5,.,., single pulse P T on T..... Figure 6: Normalized Maximum Transient Thermal Impedance (Note H) Rev : ec. Page 5 of 6

6 ate Charge Test Circuit & Waveform Qg VC UT VC V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg UT VC 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR BV SS Id Rg VC Id I AR UT iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L VC Isd I F di/dt I RM t rr Rev : ec. Page 6 of 6