I D (at V GS =10V) 2.5A. R DS(ON) (at V GS =10V) < 3.5Ω. 100% UIS Tested! 100% R g Tested! TO251. Top View. Bottom View S D AOU3N60 V DS

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1 6V,.5A NChannel MOFET eneral escription The AO3N6 & AOU3N6 have been fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular ACC applications. By providing low R (on), C iss and C rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product ummary V I (at V =V).5A 7V@5 R (ON) (at V =V) < 3.5Ω % UI Tested! % R g Tested! Top View TO5 PAK Bottom View Top View TO5 Bottom View Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter ymbol Maximum rainource Voltage 6 ateource Voltage Continuous rain Current B Avalanche Current C Repetitive avalanche energy C I M I AR E AR E A 8 6 Pulsed rain Current C AO3N6 V V ingle pulsed avalanche energy H mj Peak diode recovery dv/dt dv/dt 5 V/ns Power issipation B T C =5 C 56.8 W P erate above 5 o C.45 W/ o C Junction and torage Temperature Range Maximum lead temperature for soldering T J, T T 5 to 5 C purpose, /8" from case for 5 seconds T L 3 C ±3 T C =5 C.5 I T C = C.6 AOU3N6 Units V V A A mj Thermal Characteristics Parameter Maximum JunctiontoAmbient A, Maximum Casetosink A Maximum JunctiontoCase,F ymbol R θja R θc R θjc Typical 45.8 Maximum Units C/W C/W C/W Rev 6: Jul Page of 6

2 Electrical Characteristics (T J =5 C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV BV / TJ I rainource Breakdown Voltage Zero ate Voltage rain Current Zero ate Voltage rain Current I =5µA, V =V, T J =5 C I =5µA, V =V, T J =5 C I=5µA, V=V V =6V, V =V V =48V, T J =5 C V/ o C I atebody leakage current V =V, V =±3V ± nα V (th) ate Threshold Voltage V =5V I =5µA V R (ON) tatic rainource OnResistance V =V, I =.5A Ω g F Forward Transconductance V =4V, I =.5A.8 V iode Forward Voltage I =A,V =V.64 V I Maximum Bodyiode Continuous Current A I M Maximum Bodyiode Pulsed Current 8 A YNAMIC PARAMETER C iss Input Capacitance pf C oss Output Capacitance V =V, V =5V, f=mhz pf C rss Reverse Transfer Capacitance pf R g ate resistance V =V, V =V, f=mhz Ω WITCHIN PARAMETER Q g Total ate Charge 9.9 nc Q gs ate ource Charge V =V, V =48V, I =.5A. 3 nc Q gd ate rain Charge nc t (on) TurnOn elaytime 7 ns t r TurnOn Rise Time V =V, V =3V, I =.5A, 7 ns t (off) TurnOff elaytime R =5Ω 4 3 ns t f TurnOff Fall Time 6 ns t rr Body iode Reverse Recovery Time I F =.5A,dI/dt=A/µs,V =V 75 ns Q rr Body iode Reverse Recovery Charge I F =.5A,dI/dt=A/µs,V =V.4.7 µc A. The value of R θja is measured with the device in a still air environment with T A =5 C. B. The power dissipation P is based on T J(MAX) =5 C in a TO5 package, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C.. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C..These tests are performed with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A =5 C. H. L=6mH, I A =A, V =5V, R =Ω, tarting T J =5 C V µa THI PROUCT HA BEEN EINE AN QUALIFIE FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM ARE NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY ARIIN OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERVE THE RIHT TO IMPROVE PROUCT EIN, FUNCTION AN RELIABILITY WITHOUT NOTICE. Rev 6: Jul Page of 6

3 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 5 4 V 6.5V V =4V 55 C 3 I (A) 6V I (A) 5 C 6. V =5.5V V (Volts) Fig : OnRegion Characteristics..5 5 C V (Volts) Figure : Transfer Characteristics R (ON) (Ω) V =V Normalized OnResistance.5.5 V =V I =A I (A) Figure 3: OnResistance vs. rain Current and ate Voltage Temperature ( C) Figure 4: OnResistance vs. Junction Temperature..E I =3A BV (Normalized)..9 5 C 5 C I (A).E 4.E.E.E3 5 C 5 C T J ( o C) Figure 5: Break own vs. Junction Temperature.E V (Volts) Figure 6: Bodyiode Characteristics Rev 6: Jul Page 3 of 6

4 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 5 V =48V I =.5A C iss V (Volts) 9 6 Capacitance (pf) C oss 3 C rss Q g (nc) Figure 7: atecharge Characteristics. V (Volts) Figure 8: Capacitance Characteristics 8 µs I (Amps). R (ON) limited C T J(Max) =5 C T C =5 C µs ms ms.s Power (W) 6 4 T J(Max) =5 C T C =5 C. V (Volts) Figure 9: Maximum Forward Biased afe Operating Area (Note F).... Figure : ingle Pulse Power Rating Junctionto Case (Note F) Z θjc Normalized Transient Thermal Resistance. =T on /T T J,PK =T C P M.Z θjc.r θjc R θjc =. C/W In descending order =.5,.3,.,.5,.,., single pulse ingle Pulse T on T P Figure : Normalized Maximum Transient Thermal Impedance (Note F) Rev 6: Jul Page 4 of 6

5 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 6 3. Power issipation (W) Current rating I (A) T CAE ( C) Figure : Power erating (Note B) T CAE ( C) Figure 3: Current erating (Note B) 4 3 T J(Max) =5 C T A =5 C Power (W).... Figure 4: ingle Pulse Power Rating JunctiontoAmbient (Note ) Z θja Normalized Transient Thermal Resistance... =T on /T T J,PK =T A P M.Z θja.r θja R θja =55 C/W ingle Pulse In descending order =.5,.3,.,.5,.,., single pulse..... Figure 5: Normalized Maximum Transient Thermal Impedance (Note ) P T on T Rev 6: Jul Page 5 of 6

6 ate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge Resistive witching Test Circuit & Waveforms RL Rg 9% % t d(on) t r t d(off) t f t on t off Unclamped Inductive witching (UI) Test Circuit & Waveforms L E = / LI AR AR BV Id Rg Id I AR iode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev 6: Jul Page 6 of 6