AOW10T60P/AOWF10T60P 600V,10A N-Channel MOSFET

Transcription

1 AOWT6P/AOWFT6P 6V,A NChannel MOSFET General Description Trench Power AlphaMOSII technology Low R DS(ON) Low Ciss and Crss High Current Capability RoHS and Halogen Free Compliant Product Summary V T j,max 7V 4A I DM R DS(ON),max <.7Ω Q g,typ E 4V 26nC.5µJ Applications General Lighting for LED and CCFL AC/DC Power supplies for Industrial, Consumer, and Telecom % UIS Tested % R g Tested Top View TO262 Bottom View Top View TO262F Bottom View D G DS AOWT6P G D S Orderable Part Number Package Type Form Minimum Order Quantity AOWT6P TO262 Tube AOWFT6P TO262F Tube G DS AOWFT6P G D S G S Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter DrainSource Voltage GateSource Voltage Continuous Drain T C =25 C Current T C = C Pulsed Drain Current C Avalanche Current C L=mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt J T C =25 C Power Dissipation B Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, /8" from case for 5 seconds Symbol V DS V GS I DM I AR E AR E AS T J, T STG Thermal Characteristics Parameter Maximum JunctiontoAmbient A,D Maximum Casetosink A Maximum JunctiontoCase Symbol R θja R θcs R θjc AOWT6P AOWFT6P * Drain current limited by maximum junction temperature. I D dv/dt P D T L AOWT6P AOWFT6P 6 ± to 5 * 6.6* 28.2 Units V V A A mj mj V/ns W W/ C C C Units C/W C/W C/W Rev.2.: April 24 Page of 6

2 Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS BV DSS / TJ I DSS DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current I D =25µA, V GS =V, T J =25 C I D =25µA, V GS =V, T J =5 C I D =25µA, V GS =V V DS =6V, V GS =V V DS =48V, T J =25 C V/ o C I GSS GateBody leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =5V, I D =25µA 4. 5 V R DS(ON) Static DrainSource OnResistance V GS =V, I D =5A.58.7 Ω g FS Forward Transconductance V DS =4V, I D =5A 8.8 S V SD Diode Forward Voltage I S =A,V GS =V.74 V I S Maximum BodyDiode Continuous Current A I SM Maximum BodyDiode Pulsed Current C 4 A DYNAMIC PARAMETERS C iss Input Capacitance 595 pf V GS =V, V DS =V, f=mhz C oss Output Capacitance 56 pf C o(er) Effective output capacitance, energy related H V GS =V, V DS = to 48V, f=mhz 42 pf C o(tr) Effective output capacitance, time related I 74 pf C rss Reverse Transfer Capacitance V GS =V, V DS =V, f=mhz pf R g Gate resistance f=mhz.7 Ω SWITCHING PARAMETERS Q g Total Gate Charge 26 4 nc Q gs Gate Source Charge V GS =V, V DS =48V, I D =A 8. nc Q gd Gate Drain Charge 8.2 nc t D(on) TurnOn DelayTime 42 ns t r TurnOn Rise Time V GS =V, V DS =V, I D =A, 54 ns t D(off) TurnOff DelayTime R G =25Ω 52 ns t f TurnOff Fall Time 24 ns t rr Body Diode Reverse Recovery Time I F =A,dI/dt=A/µs,V DS =V 497 ns Q rr Body Diode Reverse Recovery Charge I F =A,dI/dt=A/µs,V DS =V 7. µc A. The value of R θja is measured with the device in a still air environment with T A =25 C. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C, Ratings are based on low frequency and duty cycles to keep initial T J =25 C. D. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using < ms pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. L=6mH, I AS =4A, V DD =5V, R G =25Ω, Starting T J =25 C. H. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V (BR)DSS. I. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V (BR)DSS. J.I SD I D, di/dt 2A/µs, V DD =4V, T J T J(MAX). V µa THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.: April 24 Page 2 of 6

3 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 6 V V DS =4V 55 C 2 7V I D (A) 8 6.5V I D (A) 25 C 4 V GS =5.5V 6V 25 C Figure : OnRegion Characteristics V GS (Volts) Figure 2: Transfer Characteristics R DS(ON) (Ω) V GS =V Normalized OnResistance V GS =V I D =5A I D (A) Figure : OnResistance vs. Drain Current and Gate Voltage E Temperature ( C) Figure 4: OnResistance vs. Junction Temperature.2 E BV DSS (Normalized)..9 I S (A) E E E2 25 C 25 C.8 E T J ( C) Figure 5: Break Down vs. Junction Temperature E V SD (Volts) Figure 6: BodyDiode Characteristics Rev.2.: April 24 Page of 6

4 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 2 V DS =48V I D =A C iss V GS (Volts) 9 6 Capacitance (pf) C oss C rss Q g (nc) Figure 7: GateCharge Characteristics. 5 Figure 8: Capacitance Characteristics 6 2 Eoss(uJ) E oss Current rating I D (A) Figure 9: Coss stored Energy T CASE ( C) Figure : Current Derating (Note F) R DS(ON) limited µs µs R DS(ON) limited µs µs I D (Amps). T J(Max) =5 C T C =25 C ms ms. DC Figure : Maximum Forward Biased Safe Operating Area for TO262 (Note F) I D (Amps). T J(Max) =5 C T C =25 C ms ms.s. DC Figure 2: Maximum Forward Biased Safe Operating Area for TO262F (Note F) s Rev.2.: April 24 Page 4 of 6

5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =.6 C/W Single Pulse In descending order D=.5,.,.,.5,.2,., single pulse P D T on T. E5.... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance for TO262 (Note F) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =4.5 C/W In descending order D=.5,.,.,.5,.2,., single pulse Single Pulse T on T P D. E5.... Pulse Width (s) Figure 4: Normalized Maximum Transient Thermal Impedance for TO262F (Note F) Rev.2.: April 24 Page 5 of 6

6 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E = /2 LI AR AR BV DSS Rg Id Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev.2.: April 24 Page 6 of 6