V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested
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1 AOD9 V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos MV) technology Very Low R DS(ON) Low Gate Charge Optimized for fastswitching applications RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS =4.5V) V 7A < 4mΩ < 7mΩ Application Synchronus Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial % UIS Tested % Rg Tested Top View TO5 DPAK Bottom View D D D S G G G S S Orderable Part Number Package Type Form Minimum Order Quantity AOD9 TO5 Tape & Reel 5 Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter DrainSource Voltage GateSource Voltage V DS Spike us Symbol V DS V GS I DM I AS E AS V SPIKE Maximum Continuous Drain T C =5 C 7 I D Current T C = C 5 Pulsed Drain Current C Continuous Drain Current Avalanche Current C Power Dissipation B T C = C 8.5 Power Dissipation A T A =5 C T A =7 C Avalanche energy L=.mH C T C =5 C Junction and Storage Temperature Range T J, T STG 55 to 75 Thermal Characteristics Parameter Symbol Typ Maximum JunctiontoAmbient A t s Maximum JunctiontoAmbient A D R θja SteadyState 4 Maximum JunctiontoCase SteadyState R θjc 7. P D ±.5 I DSM T A =5 C 5. P DSM T A =7 C..5 7 Max Units V V A A A mj V W W C Units C/W C/W C/W Rev..: October Page of
2 Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =5µA, V GS =V V I DSS Zero Gate Voltage Drain Current V DS =V, V GS =V T J =55 C 5 µa I GSS GateBody leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS, I D =5µA.7..7 V R DS(ON) V GS =V, I D =5A 7 4 mω Static DrainSource OnResistance T J =5 C 4 7 V GS =4.5V, I D =A 4 7 mω g FS Forward Transconductance V DS =5V, I D =5A 8.5 S V SD Diode Forward Voltage I S =A,V GS =V.8. V I S Maximum BodyDiode Continuous Current 7 A DYNAMIC PARAMETERS C iss Input Capacitance 5 pf C oss Output Capacitance V GS =V, V DS =5V, f=mhz 9 pf C rss Reverse Transfer Capacitance.5 8 pf R g Gate resistance f=mhz 5.5 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge.8 nc Q g (4.5V) Total Gate Charge.8 nc V GS =V, V DS =5V, I D =5A Q gs Gate Source Charge.8 nc Q gd Gate Drain Charge.8 nc t D(on) TurnOn DelayTime 5 ns t r TurnOn Rise Time V GS =V, V DS =5V, R L =Ω, ns t D(off) TurnOff DelayTime R GEN =Ω 9 ns t f TurnOff Fall Time 5 ns t rr Body Diode Reverse Recovery Time I F =5A, di/dt=5a/µs ns Q rr Body Diode Reverse Recovery Charge I F =5A, di/dt=5a/µs 5 nc A. The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A =5 C. The Power dissipation P DSM is based on R θja t s and the maximum allowed junction temperature of 5 C. The value in any given application depends on the user's specific board design, and the maximum temperature of 75 C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX) =75 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX) =75 C. D. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures to are obtained using <µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =75 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A =5 C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: October Page of
3 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V 8 V DS =5V 5 5V 4.5V 5 I D (A) 9 4V I D (A) 9.5V V GS =V C 5 C 4 5 V DS (Volts) Figure : OnRegion Characteristics (Note E) V GS (Volts) Figure : Transfer Characteristics (Note E) 4.8. R DS(ON) (mω) 8 V GS =4.5V V GS =V Normalized OnResistance V GS =V I D =5A V GS =4.5V I D =A I D (A) Figure : OnResistance vs. Drain Current and Gate Voltage (Note E) Temperature ( C) Figure 4: OnResistance vs. Junction Temperature (Note E) 4 5 I D =5A.E.E R DS(ON) (mω) 5 5 C I S (A).E.E.E 5 C 5.E 5 C 5 C.E V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage (Note E).E V SD (Volts) Figure : BodyDiode Characteristics (Note E) Rev..: October Page of
4 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =5V I D =5A 5 C iss V GS (Volts) 4 Capacitance (pf) 5 C oss 5 C rss Q g (nc) Figure 7: GateCharge Characteristics V DS (Volts) Figure 8: Capacitance Characteristics.. µs µs 5 T J(Max) =75 C T C =5 C I D (Amps)... R DS(ON) limited T J(Max) =75 C T C =5 C DC µs ms ms.. V DS (Volts) V GS > or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Power (W) Figure : Single Pulse Power Rating Junctionto Case (Note F) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =8.8 C/W Single Pulse E5.... Figure : Normalized Maximum Transient Thermal Impedance (Note F) In descending order D=.5,.,.,.5,.,., single pulse P D T on T Rev..: October Page 4 of
5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Power Dissipation (W) 5 5 Current rating I D (A) T CASE ( C) Figure : Power Derating (Note F) T CASE ( C) Figure : Current Derating (Note F) T J(Max) =5 C T A =5 C Power (W) E5.. Figure 4: Single Pulse Power Rating JunctiontoAmbient (Note H) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =5 C/W Single Pulse In descending order D=.5,.,.,.5,.,., single pulse P D..... Figure 5: Normalized Maximum Transient Thermal Impedance (Note H) T on T Rev..: October Page 5 of
6 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR BV DSS Rg Id Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev..: October Page of
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More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 2.6mΩ (< 2.4mΩ ) R DS(ON) (at V GS =6V) < 3.2mΩ (< 3.0mΩ ) 100% UIS Tested 100% R g Tested TO-263
75V NChannel MOSFET eneral escription The uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power
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AOTF38A6L/AOT38A6L 6V a MOS5 TM NChannel Power Transistor General Description Proprietary amos5 TM technology Low R DS(ON) Optimized switching parameters for better EMI performance Enhanced body diode
More informationAOD410 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor eneral Description The AOD4 uses advanced trench technology to provide excellent R D(ON) and low gate charge. This device is suitable for use as a load
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 6.0mΩ (< 5.7mΩ ) R DS(ON) (at V GS =6V) < 7.9mΩ (< 7.6mΩ ) 100% UIS Tested 100% R g Tested G S G
AOT86L/AOB86L 8V NChannel MOSFET eneral escription The AOT86L/AOB86L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction
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AOT94/AOB94 V NChannel AlphaST TM eneral escription Trench Power AlphaST TM technology Low R S(ON) Low ate Charge Optimized fastswitching applications Product Summary V S V I (at V S =V) A R S(ON) (at
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 100% UIS Tested 100% R g Tested TO-263 D 2 PAK D D S G S D
AOT144L/AOB144L 4V NChannel Rugged Planar MOSFET eneral escription The AOT144L/AOB144L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3A D. Pin 1
AON746 3V NChannel MOFET General escription The AON746 uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for use in MP and general purpose
More informationV DS -20V I D (at V GS =-4.5V) R DS(ON) (at V GS = -1.8V) ESD protected TSOP6 D. Top View. Drain-Source Voltage -20 V
2V PChannel MOSFET General escription The AO649A uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
More informationAO4728L N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor RFET TM General Description Features RFET TM uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON),and
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested G G S
AO49 NChannel AlphaMO General escription Trench Power AlphaMO (αmo M) technology Low R (ON) Low Gate Charge Optimized for fastswitching applications RoH and HalogenFree Compliant Product ummary I (at G
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AOP68 Complementary Enhancement Mode Field Effect Transistor General Description The AOP68 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
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AO36E 6,.4A NChannel MOSFET General escription Logic Level riving 4.5 ES Protection RoHS and Halogen Free Compliant Product Summary S @ T j,max 7 I (at GS =).4A R S(ON) (at GS =) < 5Ω R S(ON) (at GS =4.5)
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More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.38Ω. 100% UIS Tested 100% R g Tested TO-262F. Bottom View. Top View G D S S G D S G D.
AOW4N5/AOWF4N5 5V, 4A NChannel MOFET General Description The AOW4N5 & AOWF4N5 have been fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and
More informationV DS. ESD Protected 100% UIS Tested 100% R g Tested
3V NChannel MOFET General escription The AO4468 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is ideal for load switch and battery
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested TO-251A IPAK. D TopView. Top View G D S
AO484/AOI484 4V NChannel MOFET eneral escription The AO484/AOI484 used advanced trench technology and design to provide excellent R (ON) with low gate charge. With the excellent thermal resistance of the
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3V NChannel MOFET General escription The AO4494 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is for PWM applications. Product ummary
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Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a
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AON344 V NChannel AlphaMO General escription Trench Power AlphaMO (αmo LV) technology Low R (ON) High Current Capability RoH and HalogenFree Compliant Product ummary V V I (at V G =V).5A R (ON) (at V G
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7V NChannel MOFET eneral escription The uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose
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AONS3634 3V N-Channel MOSFET General Description Trench Power MOSFET technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary V DS I D (at V GS =V)
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AOT8L/AOB8L 8V NChannel MOFET MO TM eneral escription The AOT8L & AOB8L is fabricated with MO TM trench technology that combines excellent R (ON) with low gate charge & low Q rr. The result is outstanding
More informationV DS. 100% UIS Tested 100% R g Tested SOIC-8 D
3V PChannel MOFET General escription The AO447 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is ideal for load switch and battery
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NChannel MOFET General escription Trench Power M MOFET technology Low R (ON) Low Gate Charge Optimized for fastswitching applications E protected RoH and HalogenFree Compliant Applications ynchronus Rectification
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3V NChannel MOFET General escription The uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.5v. This device makes an excellent high
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AO43/AOI43/AOY43 3V PChannel MOFET eneral escription The AO43/AOI43/AOY43 uses advanced trench technology to provide excellent R (ON), low gate charge and low gate resistance. With the excellent thermal
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