V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested G G S
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1 AO49 NChannel AlphaMO General escription Trench Power AlphaMO (αmo M) technology Low R (ON) Low Gate Charge Optimized for fastswitching applications RoH and HalogenFree Compliant Product ummary I (at G =) R (ON) (at G =) R (ON) (at G =4.5) 8A < 3mΩ < 33mΩ Applications ynchronus Rectification in C/C and AC/C Converters Isolated C/C Converters in Telecom and Industrial % UI Tested % Rg Tested Top iew OIC8 Bottom iew G G Orderable Part Number Package Type Form Minimum Order Quantity AO49 O8 Tape & Reel Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter rainource oltage Gateource oltage Avalanche energy pike L=.mH C ymbol G I A E A PIKE Maximum Continuous rain T A =5 C 8 I Current T A =7 C 6. Pulsed rain Current C I M 3 Avalanche Current C 5 µs T A =5 C Power issipation B T A =7 C. Junction and torage Temperature Range T J, T TG 55 to 5 Thermal Characteristics Parameter ymbol Typ Maximum JunctiontoAmbient A t s 3 R θja Maximum JunctiontoAmbient A teadytate 59 Maximum JunctiontoLead teadytate R θjl 6 P ± 3. Max 75 4 Units A A mj W C Units Rev..: January 4 Page of 5
2 Electrical Characteristics (T J =5 C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PAMETER B rainource Breakdown oltage I =5µA, G = I Zero Gate oltage rain Current =, G = T J =55 C 5 µa I G GateBody leakage current =, G =± ± na G(th) Gate Threshold oltage = G, I =5µA R (ON) G =, I =8A 8 3 mω tatic rainource OnResistance T J =5 C G =4.5, I =6A 4 33 mω g F Forward Transconductance =5, I =8A iode Forward oltage I =A, G =.7 I Maximum Bodyiode Continuous Current 4 A YNAMIC PAMETER C iss Input Capacitance 9 pf C oss Output Capacitance G =, =5, f=mhz 95 pf C rss Reverse Transfer Capacitance 7 pf R g Gate resistance f=mhz.5..7 Ω WITCHING PAMETER Q g () Total Gate Charge nc Q g (4.5) Total Gate Charge 7 nc G =, =5, I =8A Q gs Gate ource Charge 4.5 nc Q gd Gate rain Charge.5 nc t (on) TurnOn elaytime 7 ns t r TurnOn Rise Time G =, =5, R L =6.5Ω, 3 ns t (off) TurnOff elaytime R GEN =3Ω ns t f TurnOff Fall Time 3 ns t rr Body iode Reverse Recovery Time I F =8A, di/dt=5a/µs ns Q rr Body iode Reverse Recovery Charge I F =8A, di/dt=5a/µs 9 nc A. The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A =5 C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T J(MAX) =5 C, using s junctiontoambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C. Ratings are based on low frequency and duty cycles to keep initialt J =5 C.. The R θja is the sum of the thermal impedance from junction to lead R θjl and lead to ambient. E. The static characteristics in Figures to 6 are obtained using <µs pulses, duty cycle.5% max. F. These curves are based on the junctiontoambient thermal impedance which is measured with the device mounted on in FR4 board with oz. Copper, assuming a maximum junction temperature of T J(MAX) =5 C. The OA curve provides a single pulse rating. THI PROUCT HA BEEN EIGNE AN QUALIFIE FOR THE CONUMER MKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EICE OR YTEM E NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY IING OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERE THE RIGHT TO IMPROE PROUCT EIGN, FUNCTION AN RELIABILITY WITHOUT NOTICE. Rev..: January 4 Page of 5
3 TYPICAL ELECTRICAL AN THERMAL CHACTERITIC =5 I (A) 3.5 I (A) 5 C G =3 5 C (olts) Figure : OnRegion Characteristics (Note E) G (olts) Figure : Transfer Characteristics (Note E). R (ON) (mω) 5 5 G =4.5 G = Normalized OnResistance G = I =8A G =4.5 I =6A 5 5 I (A) Figure 3: OnResistance vs. rain Current and Gate oltage (Note E) Temperature ( C) Figure 4: OnResistance vs. Junction Temperature (Note E) 6 I =8A.E 5.E R (ON) (mω) 5 C 5 C G (olts) Figure 5: OnResistance vs. Gateource oltage (Note E) I (A).E.E.E3.E4.E5 5 C 5 C (olts) Figure 6: Bodyiode Characteristics (Note E) Rev..: January 4 Page 3 of 5
4 TYPICAL ELECTRICAL AN THERMAL CHACTERITIC 8 =5 I =8A 6 C iss G (olts) 6 4 Capacitance (pf) 8 6 C rss C oss Q g (nc) Figure 7: GateCharge Characteristics (olts) Figure 8: Capacitance Characteristics I (Amps)..... R (ON) limited T J(Max) =5 C T A =5 C µs µs µs ms ms C.. (olts) G > or equal to 4.5 Figure 9: Maximum Forward Biased afe Operating Area (Note F) Power (W) T J(Max) =5 C T A =5 C E5.. Pulse Width (s) Figure : ingle Pulse Power Rating Junctionto Ambient (Note F) Z θja Normalized Transient Thermal Resistance... =T on /T T J,PK =T A P M.Z θja.r θja R θja =75 ingle Pulse E5.... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) In descending order =.5,.3,.,.5,.,., single pulse P T on T Rev..: January 4 Page 4 of 5
5 Gate Charge Test Circuit & Waveform Qg UT Qgs Qgd Ig RL Resistive witching Test Circuit & Waveforms Charge Rg UT 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive witching (UI) Test Circuit & Waveforms L E = / LI B Rg Id Id I UT iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev..: January 4 Page 5 of 5
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V NChannel MOSFET General Description Low R DS(ON) Optimized for Load Switch High Current Capability ESD Protected RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =7V) 100% UIS Tested 100% R g Tested
AOD444 V NChannel MOSFET General Description The AOD444 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON).This device is ideal for boost converters
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AO 3V Complementary MOSFET General Description The AO uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a highspeed power inverter, suitable
More informationAON V P-Channel MOSFET
3V PChannel MOSFET General Description Latest Trench Power MOSFET technology Very Low R DS(ON) at 4.5V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Application System/Load
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View
AON V NChannel MOSFET General Description The AON uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching
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NChannel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally suited
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS
AON6A 3V NChannel MOSFET General Description The AON6A uses advanced trench technology to provide excellent R DS(ON), low gate charge.this device is suitable for use as a high side switch in SMPS and general
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AON7E 3V NChannel MOSFET General Description The AON7E combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and
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NChannel Enhancement Mode Field Effect Transistor General Description The AOD43 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is ideally
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AON749 3V PChannel MOSFET General Description The AON749 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationAOD454A N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent thermal
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AOT68L/AOB68L/AOTF68L 6V NChannel MOSFET General Description The AOT68L & AOB68L & AOTF68L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching
More informationV DS I D (at V GS =-4.5V) -50A R DS(ON) (at V GS =-1.5V) 100% UIS Tested 100% R g Tested. DFN 3.3x3.3 EP D. Symbol V Gate-Source Voltage V GS I D
AON73 V PChannel MOSFET General Description The AON73 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and
More informationAOD414 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD44 uses advanced trench technology to provide excellent R DS(ON), shootthrough immunity and body diode characteristics. This
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2V PChannel MOSFET General Description The AO345 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
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V NChannel MOSFET General Description The AOD4 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.power losses are minimized due
More informationAON7264E 60V N-Channel AlphaSGT TM
6V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge ESD protected Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS
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NChannel Enhancement Mode Field Effect Transistor General Description The AOL44 uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally
More informationV DS. Pin 1 G1 D2. Maximum Drain-Source Voltage -12 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C V GS I D I DM P D
AON289 2V Dual PChannel MOSFET General Description The AON289 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
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PChannel Enhancement Mode Field Effect Transistor General Description The AO4433 uses advanced trench technology to provide excellent R DS(ON) and ultralow low gate charge with a 25V gate rating. This
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AON7 3V PChannel MOSFET General Description The AON7 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and
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V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Level Driving Excellent Gate Charge x R DS(ON) Product (FOM) RoHS and HalogenFree Compliant Product Summary
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AO78 Dual PChannel Enhancement Mode Field Effect Transistor General Description The AO78 uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages
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AOTF49 PChannel Enhancement Mode Field Effect Transistor General Description The AOTF49/L uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. With the
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