AO3160E 600V,0.04A N-Channel MOSFET
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1 AO36E 6,.4A NChannel MOSFET General escription Logic Level riving 4.5 ES Protection RoHS and Halogen Free Compliant Product Summary T j,max 7 I (at GS =).4A R S(ON) (at GS =) < 5Ω R S(ON) (at GS =4.5) < 6Ω Applications Typical ES protection HBM Class Load Switch Top iew Bottom iew S G G G S AO36E Orderable Part Number Package Type Form AO36E SOT3A Tape & Reel S Minimum Order Quantity 3 Absolute Maximum Ratings unless otherwise noted Parameter rainsource oltage GateSource oltage Continuous rain Current A,F T A =7 C Pulsed rain Current B Peak diode recovery dv/dt T Power issipation A A =5 C T A =7 C Symbol S GS I I M dv/dt P Maximum 6. 5 /ns.39 W Junction and Storage Temperature Range T J, T STG 55 to 5 C Maximum lead temperature for soldering purpose, /8" from case for 5 seconds T L 3 C ± Units A W/ C Thermal Characteristics Parameter Maximum JunctiontoAmbient A Maximum JunctiontoAmbient A Maximum JunctiontoLead C Symbol t s R θja SteadyState SteadyState R θjl Typical Maximum Units 7 9 C/W 5 C/W 63 8 C/W Rev..: May 8 Page of 5
2 AO36E Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PAMETERS B SS B SS / TJ I SS I GSS / o C ± µa GS(th) Gate Threshold oltage S =5, I =8µA.4 3. R S(ON) g FS S I S I SM C iss C oss C rss R g Q g Q gs Q gd T d(on) T r T d(off) T f T rr Q rr rainsource Breakdown oltage Breakdown oltage Temperature Cofficient Zero Gate oltage rain Current GateBody leakage current Static rainsource OnResistance Forward Transconductance iode Forward oltage Maximum Bodyiode Continuous Current Maximum Bodyiode Pulsed Current C YNAMIC PAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PAMETERS Total Gate Charge Gate Source Charge Gate rain Charge TurnOn elaytime TurnOn Rise Time TurnOff elaytime TurnOff Fall Time Body iode Reverse Recovery Time Body iode Reverse Recovery Charge I =5µA, GS =, T J =5 C I =5µA, GS =, T J =5 C I =5µA, GS = S =6, GS = S =48, T J =5 C S =, GS =± GS =, I =.6A GS =4.5, I =.6A S =4, I =.6A I S =.6A, GS = GS =, S =5, f=mhz GS =, S =5, f=mhz f=mhz GS =, S =4, I =.A GS =, S =3, I =.A, R G =6Ω I F =.6A, di/dt=a/µs, S =3 µa 76 5 Ω 78 6 Ω.5 S.76.4 A. A 9.5 pf.7 pf.6 pf Ω.9 nc.9 nc.49 nc 4 ns 5 ns 3 ns 55 ns 5 ns 9.5 nc A. The value of R qja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The R qja is the sum of the thermal impedence from junction to lead R qjl and lead to ambient.. The static characteristics in Figures to 6 are obtained using <3 ms pulses, duty cycle.5% max. E. These tests are performed with the device mounted on in FR4 board with oz. Copper, in a still air environment with. The SOA curve provides a single pulse rating. F. The current rating is based on the t s thermal resistance rating. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EICES OR SYSTEMS E NOT AUTHORIZE. AOS OES NOT ASSUME ANY LIABILITY ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PROUCTS. AOS RESERES THE RIGHT TO IMPROE PROUCT ESIGN,FUNCTIONS AN RELIABILITY WITHOUT NOTICE. Rev..: May 8 Page of 5
3 AO36E TYPICAL ELECTRICAL AN THERMAL CHACTERISTICS 3.5 I (ma) I (A).4.3. S =4 5 C 5 GS = S (olts) Figure : OnRegion Characteristics GS (olts) Figure : Transfer Characteristics 3 3 R S(ON) (Ω) GS = Normalized OnResistance GS = I =.6A I (A) Figure 3: OnResistance vs. rain Current and Gate oltage.e Temperature ( C) Figure 4: OnResistance vs. Junction Temperature. B SS (Normalized)..9.8 I S (A).E.E.E3 5 C 5 C T J ( C) Figure 5: Break own vs. Junction Temperature.E S (olts) Figure 6: Bodyiode Characteristics Rev..: May 8 Page 3 of 5
4 AO36E TYPICAL ELECTRICAL AN THERMAL CHACTERISTICS 8 S =4 I =.A GS (olts) 6 4 Capacitance (pf) C iss C oss C rss Q g (nc) Figure 7: GateCharge Characteristics.. S (olts) Figure 8: Capacitance Characteristics I (Amps)... R S(ON) limited T J(Max) =5 C. C S (olts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) µs ms ms ms s s Power (W) T J(Max) =5 C..... Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient(Note E) Z θjc Normalized Transient Thermal Resistance.. =T on /T T J,PK =T A P M.Z θja.r θja R θja =5 C/W Single Pulse In descending order =.5,.3,.,.5,.,., single pulse P M T on T Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note E) Rev..: May 8 Page 4 of 5
5 AO36E Gate Charge Test Circuit & Waveform Qg Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI B SS Rg Id Id I iode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev..: May 8 Page 5 of 5
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