AOT500L N-Channel Enhancement Mode Field Effect Transistor
|
|
- Damon Daniel
- 6 years ago
- Views:
Transcription
1 AOT5L NChannel Enhancement Mode Field Effect Transistor eneral escription AOT5 uses an optimally designed temperature compensated gatedrain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET. The built in resistor guarantees proper clamp operation under all circuit conditions, and the MOSFET never goes into avalanche breakdown. Advanced trench technology provides excellent low Rdson, gate charge and body diode characteristics, making this device ideal for motor and inductive load control applications. Standard Product AOT5 is Pbfree (meets ROHS & Sony 59 specifications) Features V S (V) = Clamped I = 8A (V S = V) R S(ON) < 5.3 mω (V S = V) % UIS tested % Rg tested Top View TO Bottom View Ω S S S Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter Symbol rainsource Voltage V S atesource Voltage Continuous rain Current T C =5 C T C = C Continuous rain ate Current Continuouse ate Source Current Pulsed rain Current C Avalanche Current L=uH H V S I 8 57 I I S I M I AR E AR T J, T ST Maximum clamped clamped Repetitive avalanche energy H 5 T C =5 C 5 P Power issipation B T C = C Junction and Storage Temperature Range Thermal Characteristics Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A SteadyState R θja 75 C/W Maximum JunctiontoCase B SteadyState R θjc.7.3 C/W to 75 Units V V A ma 5 A A mj W C
2 AOT5 Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV SS(z) rainsource Breakdown Voltage I =ma, V S =V 33 V BV CLAMP rainsource Clamping Voltage I =A, V S =V 3 V I SS(z) Zero ate Voltage rain Current V S =V, V S =V 3 µa BV SS atesource Voltage V S =V, I =5µA V I SS atebody leakage current V S =V, V S =±V µα V S(th) ate Threshold Voltage V S =V S, I =5µA.5 3 V I (ON) On state drain current V S =V, V S =5V 5 A R S(ON) Static rainsource OnResistance V S =V, I =3A T J =5 C g FS Forward Transconductance V S =5V, I =3A 95 S V S iode Forward Voltage I S =A, V S =V.7 V I S Maximum Bodyiode Continuous Current 8 A YNAMIC PARAMETERS C iss Input Capacitance 55 pf C oss Output Capacitance V S =V, V S =5V, f=mhz 75 pf C rss Reverse Transfer Capacitance 3 pf R g ate resistance V S =V, V S =V, f=mhz 3 3 Ω SWITCHIN PARAMETERS Q g (V) Total ate Charge 9 89 nc Q g (.5V) Total ate Charge 3 nc V S =V, V S =5V, I =3A Q gs ate Source Charge nc Q gd ate rain Charge 5 nc t (on) TurnOn elaytime 5 ns t r TurnOn Rise Time V S =V, V S =5V, R L =.5Ω, 35 ns t (off) TurnOff elaytime R EN =3Ω 5 ns t f TurnOff Fall Time ns t rr Body iode Reverse Recovery Time I F =3A, di/dt=a/µs 78 ns Q rr Body iode Reverse Recovery Charge I F =3A, di/dt=a/µs 8 nc A: The value of R θja is measured with the device in a still air environment with T A =5 C. B. The power dissipation P is based on T J(MAX) =75 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX) =75 C.. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =75 C.. The maximum current rating is limited by bondwires. H. E AR and I AR are based on a uh inductor with Tj(start) = 5C for each pulse. Rev : ec mω THIS PROUCT HAS BEEN ESINE AN QUALIFIE FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS ARE NOT AUTHORIZE. AOS OES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PROUCTS. AOS RESERVES THE RIHT TO IMPROVE PROUCT ESIN, FUNCTIONS AN RELIABILITY WITHOUT NOTICE.
3 AOT5 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 5 V 7V 5V V.5V 8 V S =5V I (A) 5 5 V V V S =V, I S =3.5V =3A I (A) 5 C 5 C 3 5 V S (Volts) Fig : OnRegion Characteristics C V S (Volts) Figure : Transfer Characteristics R S(ON) (mω) V S =V Normalized OnResistance V S =V I =3A I (A) Figure 3: OnResistance vs. rain Current and ate Voltage Temperature ( C) Figure : OnResistance vs. Junction Temperature I =3A R S(ON) (mω) 8 5 C I S (A) 5 C. 5 C.. C 5 C V S (Volts) Figure 5: OnResistance vs. atesource Voltage V S (Volts) Figure : Bodyiode Characteristics
4 AOT5 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS V S (Volts) 8 V S =3V I =3A V S =V, I =3A Capacitance (pf) C rss C iss C oss Q g (nc) Figure 7: atecharge Characteristics V S (Volts) Figure 8: Capacitance Characteristics I (Amps) R S(ON) limited T J(Max) =75 C T C =5 C C µs µs ms ms. V S (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power (W) T J(Max) =75 C T A =5 C Pulse Width (s) Figure : Single Pulse Power Rating JunctiontoCase (Note F) Z θjc Normalized Transient Thermal Resistance.. =T on /T T J,PK =T C P M.Z θjc.r θjc R θjc =.3 C/W Single Pulse In descending order =.5,.3,.,.5,.,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P T on T
5 AOT5 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS I (A), Peak Avalanche Current T C =5 C V S =V, I =3A Time in avalanche, t A (us) Figure : Single Pulse Avalanche capability t A L I = BV V Power issipation (W) T CASE ( C) Figure 3: Power erating (Note B) Current rating I (A) T CASE ( C) Figure : Current erating (Note B)
6 AOT5 TYPICAL PROTECTION CHARACTERISTICS. Trench BV.5 I (A). BV CLAMP.5. BV SS(Z) V S (Volts) Fig 5: BV CLAMP Characteristic R Vz This device uses builtin ate to Source and ate to rain zener protection. While the atesource zener protects against excessive V S conditions, the ate to rain protection, clamps the VS well below the device breakdown, preventing an avalanche condition within the MOSFET as a result of voltage overshoot at the rain electrode. It is designed to breakdown well before the device breakdown. uring such an event, current flows through the zener clamp, which is situated internally between the ate to rain. This current flows at BV SS(Z), building up the V S internal to the device. When the current level through the zener reaches approximately 3mA, the V S is approximately equal to V S(PLATEAU), allowing significant channel conduction and thus clamping the rain to Source voltage. The V S needed to turn the device on is controlled with an internally lumped gate resistor R approximately equal to Ω. V S(PLATEAU) = Ω x 3mA =3V I (A)/ (V) V PLATEAU BV CLAMP 5 o C BV CLAMP o C S It can also be said that the VS during clamping is equal to:. BV SS = BV CLAMP V S(PLATEAU) Additional power loss associated with the protection circuitry can be considered negligible when compare to the conduction losses of the MOSFET itself; EX: PL=3µAmax x V=.8mW PL(rds)=A x mω=3mw (Zener leakage loss) (MOSFET loss)..e.5e 5.E 7.5E.E5 Time in Avalanche (Seconds) Fig : Unclamped Inductive Switching Fig: The builtin ate to rain clamp prevents the device from going into Avalanche by setting the clamp voltage well below the actual breakdown of the device. When the rain to ate voltage approaches the BV clamp, the internal ate to Source voltage is charged up and channel conduction occurs, sinking the current safely through the device. The BV CLAMP is virtually temperature independent, providing even greater protection during normal operation.
7 AOT5 ate Charge Test Circuit & Waveform Qg UT V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg UT 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR BV SS Rg Id Id I AR UT iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr
V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 100% UIS Tested 100% R g Tested TO-263 D 2 PAK D D S G S D
AOT144L/AOB144L 4V NChannel Rugged Planar MOSFET eneral escription The AOT144L/AOB144L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 2.6mΩ (< 2.4mΩ ) R DS(ON) (at V GS =6V) < 3.2mΩ (< 3.0mΩ ) 100% UIS Tested 100% R g Tested TO-263
75V NChannel MOSFET eneral escription The uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 6.0mΩ (< 5.7mΩ ) R DS(ON) (at V GS =6V) < 7.9mΩ (< 7.6mΩ ) 100% UIS Tested 100% R g Tested G S G
AOT86L/AOB86L 8V NChannel MOSFET eneral escription The AOT86L/AOB86L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction
More informationAOT460 N-Channel Enhancement Mode Field Effect Transistor
AOT46 NChannel Enhancement Mode Field Effect Transistor General escription The AOT46/L uses advanced trench technology and design to provide excellent R S(ON) with low gate charge. This device is suitable
More informationAOT2904/AOB V N-Channel AlphaSGT TM
AOT94/AOB94 V NChannel AlphaST TM eneral escription Trench Power AlphaST TM technology Low R S(ON) Low ate Charge Optimized fastswitching applications Product Summary V S V I (at V S =V) A R S(ON) (at
More informationAOD407 P-Channel Enhancement Mode Field Effect Transistor
AO47 PChannel Enhancement Mode Field Effect Transistor General escription The AO47 uses advanced trench technology to provide excellent R S(ON), low gate charge and low gate resistance. With the excellent
More informationAOW V N-Channel MOSFET
AOW9 V NChannel MOSFET General escription Trench Power MV MOSFET technology Low R S(ON) Low Gate Charge Optimized for fastswitching applications Product Summary V S I (at V GS =V) R S(ON) (at V GS =V)
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 100% UIS Tested 100% R g Tested S G. Symbol. Gate-Source Voltage V GS I DM T A =25 C I D
7V NChannel MOFET eneral escription The uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested TO-251A IPAK. D TopView. Top View G D S
AO484/AOI484 4V NChannel MOFET eneral escription The AO484/AOI484 used advanced trench technology and design to provide excellent R (ON) with low gate charge. With the excellent thermal resistance of the
More informationAOT418L/AOB418L 100V N-Channel MOSFET SDMOS TM
V NChannel MOFET MO TM eneral escription The AOT48L/AOB48L is fabricated with MO TM trench technology that combines excellent R (ON) with low gate charge and low Q rr.the result is outstanding efficiency
More informationAOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor
AO485/AOI485 PChannel Enhancement Mode Field Effect Transistor eneral escription The AO485/AOI485 uses advanced trench technology to provide excellent R (ON) and low gate charge. With the excellent thermal
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 7V) 100% UIS Tested 100% R g Tested TO-263 D 2 PAK D D G S AOB480L S D S G
AOT8L/AOB8L 8V NChannel MOFET MO TM eneral escription The AOT8L & AOB8L is fabricated with MO TM trench technology that combines excellent R (ON) with low gate charge & low Q rr. The result is outstanding
More informationAOD423/AOI423/AOY423 30V P-Channel MOSFET
AO43/AOI43/AOY43 3V PChannel MOFET eneral escription The AO43/AOI43/AOY43 uses advanced trench technology to provide excellent R (ON), low gate charge and low gate resistance. With the excellent thermal
More informationV DS -20V I D (at V GS =-4.5V) R DS(ON) (at V GS = -1.8V) ESD protected TSOP6 D. Top View. Drain-Source Voltage -20 V
2V PChannel MOSFET General escription The AO649A uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
More informationAOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM
AO26E/AOI26E/AOY26E 6V NChannel AlphaT TM eneral escription Trench Power AlphaT TM technology Low R (ON) Low ate Charge Low Eoss E protected RoH and HalogenFree Compliant Applications High efficiency power
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3A D. Pin 1
AON746 3V NChannel MOFET General escription The AON746 uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for use in MP and general purpose
More informationAO V N-Channel MOSFET. General Description. Features
2V NChannel MOFET eneral escription The AO3 uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for use as
More informationAO V N-Channel MOSFET
3V NChannel MOFET General escription The AO4494 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is for PWM applications. Product ummary
More informationI D (at V GS =10V) R DS(ON) (at V GS =10V) < 1.3Ω. 100% UIS Tested! 100% R g Tested!
AO7N6/AOI7N6 6V,7A NChannel MOFET eneral escription The AO7N6 & AOI7N6 have been fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness
More informationI D (at V GS =10V) 2.5A. R DS(ON) (at V GS =10V) < 3.5Ω. 100% UIS Tested! 100% R g Tested! TO251. Top View. Bottom View S D AOU3N60 V DS
6V,.5A NChannel MOFET eneral escription The AO3N6 & AOU3N6 have been fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular
More informationAON7422E 30V N-Channel MOSFET
AON7E 3V NChannel MOSFET General Description The AON7E combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and
More informationAON7400A 30V N-Channel MOSFET
AON74A 3V NChannel MOSFET General Description The AON74A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is suitable for use as a
More informationAO V P-Channel MOSFET. V DS R DS(ON) (at V GS =-4.5V) -30V
3V PChannel MOFET eneral escription The AO349 uses advanced trench technology to provide excellent R (ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product
More informationV DS R DS(ON) (at V GS =-2.5V)
3V PChannel MOFET eneral escription The AO741 uses advanced trench technology to provide excellent R (ON), low gate charge, and operation with gate voltages as low as.5v, in the small OT33 footprint. It
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.56Ω. 100% UIS Tested! 100% R g Tested! TO251A IPAK G S
25V,8A NChannel MOFET eneral escription The AO8N25 & AOI8N25 have been fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular
More informationV DS. 100% UIS Tested 100% R g Tested. Symbol. Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C V GS I DM T A =25 C I D
V NChannel MOSFET General Description The combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON).This device is ideal for boost converters and synchronous
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =7V) 100% UIS Tested 100% R g Tested
AOD444 V NChannel MOSFET General Description The AOD444 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON).This device is ideal for boost converters
More informationAON V P-Channel MOSFET
2V PChannel MOSFET General escription The AON447 uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS
AON6A 3V NChannel MOSFET General Description The AON6A uses advanced trench technology to provide excellent R DS(ON), low gate charge.this device is suitable for use as a high side switch in SMPS and general
More informationV DS. 100% UIS Tested 100% R g Tested
3V NChannel MOFET General escription The uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.5v. This device makes an excellent high
More informationAOD454A N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent thermal
More informationV T j,max I DM. 100% UIS Tested 100% R g Tested TO251. Top View. Bottom View D G AOU7S60
V 7A α MO TM Power Transistor eneral escription The AO7 & AOU7 have been fabricated using the advanced αmo TM high voltage process that is designed to deliver high levels of performance and robustness
More informationAOT2618L/AOB2618L/AOTF2618L
AOT68L/AOB68L/AOTF68L 6V NChannel MOSFET General Description The AOT68L & AOB68L & AOTF68L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View
AON648 V NChannel MOSFET General Description The AON648 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for boost converters
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View
AON V NChannel MOSFET General Description The AON uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching
More informationAOW V N-Channel MOSFET
AOW5 5V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Optimized for fastswitching applications Product Summary V DS I D (at V GS =V) R DS(ON) (at V
More informationV DS. ESD Protected 100% UIS Tested 100% R g Tested
3V NChannel MOFET General escription The AO4468 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is ideal for load switch and battery
More informationAOD2910E 100V N-Channel MOSFET
AOD29E V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge ESD protected Optimized for fastswitching applications Product Summary V DS I D (at V GS =V)
More informationV DS -20V I D (at V GS =-4.5V) -5A R DS(ON) (at V GS = -1.8V) ESD protected SOT23 D G G
2V PChannel MOFET eneral escription The AO345A uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for use
More informationAO3160E 600V,0.04A N-Channel MOSFET
AO36E 6,.4A NChannel MOSFET General escription Logic Level riving 4.5 ES Protection RoHS and Halogen Free Compliant Product Summary S @ T j,max 7 I (at GS =).4A R S(ON) (at GS =) < 5Ω R S(ON) (at GS =4.5)
More informationAON V N-Channel MOSFET
AON6 V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS =.5V) V A
More informationAO V P-Channel MOSFET
AO347 3V PChannel MOFET eneral escription The AO347 uses advanced trench technology to provide excellent R (ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.
More informationV DS. 100% UIS Tested 100% R g Tested
3V PChannel MOFET General escription The uses advanced trench technology to provide excellent R (ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Product
More informationV DS I D (at V GS =-4.5V) -50A R DS(ON) (at V GS =-1.5V) 100% UIS Tested 100% R g Tested. DFN 3.3x3.3 EP D. Symbol V Gate-Source Voltage V GS I D
AON73 V PChannel MOSFET General Description The AON73 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and
More informationV DS. Absolute Maximum Ratings T A =25 C unless otherwise noted Symbol Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain T A =25 C V GS
3V NChannel MOFET eneral escription The AO74 uses advanced trench technology to provide excellent R (ON), very low gate charge and operation with gate voltages as low as.5v. This device is suitable for
More informationV DS. 100% UIS Tested 100% R g Tested. Top View V GS -200 T A =25 C T A =70 C I DM I DSM I AS E AS P D P DSM T J, T STG
AON7 3V PChannel MOSFET General Description The AON7 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and
More informationAOD V N-Channel MOSFET
V NChannel MOSFET General Description The AOD4 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.power losses are minimized due
More informationAO V P-Channel MOSFET
3V PChannel MOFET General escription The AO4413 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 5V gate rating. This device is suitable for use as a load
More informationAON V P-Channel MOSFET
AON749 3V PChannel MOSFET General Description The AON749 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested
V NChannel MOSFET General Description Low R DS(ON) Optimized for Load Switch High Current Capability ESD Protected RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested
3V NChannel MOSFET General Description The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is suitable for use as a high
More informationAON V N-Channel MOSFET
AON659 4V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Optimized for fastswitching applications RoHS and HalogenFree Compliant Product Summary V DS
More informationAOD4132 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD43 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is ideally
More informationV DS. 100% UIS Tested 100% R g Tested SOIC-8 D
3V PChannel MOFET General escription The AO447 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is ideal for load switch and battery
More informationAOD414 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD44 uses advanced trench technology to provide excellent R DS(ON), shootthrough immunity and body diode characteristics. This
More informationAOD410 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor eneral Description The AOD4 uses advanced trench technology to provide excellent R D(ON) and low gate charge. This device is suitable for use as a load
More informationAOTF409 P-Channel Enhancement Mode Field Effect Transistor
AOTF49 PChannel Enhancement Mode Field Effect Transistor General Description The AOTF49/L uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. With the
More informationAOD21357/AOI V P-Channel MOSFET
AO2357/AOI2357 3V PChannel MOFET eneral escription Latest advanced trench technology Low R (ON) High Current Capability RoH and HalogenFree Compliant Product ummary V 3V I (at V =V) 7A R (ON) (at V =V)
More informationAO4406 N-Channel Enhancement Mode Field Effect Transistor
AO446 NChannel Enhancement Mode Field Effect Transistor General escription The AO446/L uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low
More informationAONS V N-Channel AlphaSGT TM
AONS66 6V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Level Gate Drive Excellent Gate Charge x R DS(ON) Product (FOM) RoHS and HalogenFree Compliant
More informationAONS V N-Channel AlphaSGT TM
AONS9 V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge Optimized for fastswitching applications RoHS and HalogenFree Compliant Product Summary
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested SOIC-8 D1. Top View. S2 Pin1
V Dual NChannel MOSFET General Description The AO89 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching
More informationAOD404 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally suited
More informationAON V P-Channel MOSFET
3V PChannel MOSFET General Description Latest Trench Power MOSFET technology Very Low R DS(ON) at 4.5V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Application System/Load
More informationAOL1414 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOL44 uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally
More informationAO3400A. 30V N-Channel MOSFET V DS. 30V I D (at V GS =10V) 5.7A R DS(ON) (at V GS = 2.5V)
3V NChannel MOFET eneral escription The AO34A combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is suitable for use as a load switch or
More informationAON7264E 60V N-Channel AlphaSGT TM
6V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge ESD protected Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS
More informationAOTF5N50FD. 500V, 5A N-Channel MOSFET with Fast Recovery Diode. V DS I D (at V GS =10V) R DS(ON) (at V GS =10V)
5V, 5A NChannel MOSFET with Fast Recovery Diode General Description The AOTF5N5FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =1.8V) SOT23 D S S
V NChannel MOFET eneral escription The AO34 uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.8v while retaining a 2V V (MAX) rating.
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) SOT23 D S S
AO3 V NChannel MOFET eneral escription The AO3 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is ideal for boost converters and synchronous
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested
AOD9 V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos MV) technology Very Low R DS(ON) Low Gate Charge Optimized for fastswitching applications RoHS and HalogenFree Compliant
More informationAO4468 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General escription The AO4468 uses advanced trench technology to provide excellent R (ON) and low gate charge. This device is suitable for use as a load
More informationAOD380A60 600V a MOS5 TM N-Channel Power Transistor
AO38A6 6V a MO5 TM NChannel Power Transistor eneral escription Proprietary amo5 TM technology Low R (ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and
More informationAO V P-Channel MOSFET V DS. -60V I D (at V GS =-10V) -4A R DS(ON) (at V GS = -4.5V)
6V PChannel MOFET General escription The AO4441 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge. This device is suitable for use as a load switch or in PWM applications.
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.56Ω. DFN 3x3A_EP Top View. Top View
25V,5A NChannel MOFET General escription The AON7458 is fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular ACC applications.by
More informationAO4407A P-Channel Enhancement Mode Field Effect Transistor
AO447A PChannel Enhancement Mode Field Effect Transistor General escription The AO447A/L uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 25V gate rating.
More informationSymbol. Maximum Drain-Source Voltage 600 Gate-Source Voltage Continuous Drain Current A,F Pulsed Drain Current B Peak diode recovery dv/dt V DS V GS
6,.34A NChannel MOFET eneral escription The is fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular ACC applications.
More informationV DS (V) = 30V I D = 10A (V GS = 10V) R DS(ON) < 19.5mΩ (V GS = 10V) R DS(ON) < 26mΩ (V GS = 4.5V) V DS V GS I D I DM I AR E AR P D T J, T STG
General escription The AO4496 uses advanced trench technology to provide excellent R (ON) with low gate charge. This device is suitable for use as a CC converter application. Product ummary V (V) = 3V
More informationAOTF7N60FD. 600V, 7A N-Channel MOSFET with Fast Recovery Diode. V DS I D (at V GS =10V)
6V, 7A NChannel MOSFET with Fast Recovery Diode General Description The AOTF7N6FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance
More informationV DS. 100% UIS Tested 100% R g Tested. Top View S2 G2 S1 G1
3V AO48 Dual PChannel MOSFET General Description The AO48 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationAO V P-Channel MOSFET
3V PChannel MOFET General escription The AO4435 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 25V gate rating. This device is suitable for use as a load
More informationTop View. Max n-channel Max p-channel Units Drain-Source Voltage V. Symbol V DS V GS ±12 I DM P D T J, T STG Maximum Junction-to-Lead
3V Complementary MOSFET General Description The AO uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a highspeed power inverter, suitable
More informationTop View S1 G1 S2 G2. Orderable Part Number Package Type Form Minimum Order Quantity AO4630 SO-8 Tape & Reel Symbol V DS ±12 V GS I D
3V Complementary MOSFET General Description AO463 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for
More informationAO V Complementary MOSFET
AO 3V Complementary MOSFET General Description The AO uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a highspeed power inverter, suitable
More informationAON V N-Channel AlphaMOS
AON344 V NChannel AlphaMO General escription Trench Power AlphaMO (αmo LV) technology Low R (ON) High Current Capability RoH and HalogenFree Compliant Product ummary V V I (at V G =V).5A R (ON) (at V G
More informationAO4423/AO4423L 30V P-Channel MOSFET
AO3/AO3L 3V PChannel MOFET General escription The AO3/AO3L uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 5V gate rating. This device is suitable for use
More informationI D (at V GS =10V) 2.8A. R DS(ON) (at V GS =10V) < 4.8Ω. 100% UIS Tested! 100% R g Tested!
AODN8 8V,.8A NChannel MOSFET General Description The AODN8 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular
More informationAOW10T60P/AOWF10T60P 600V,10A N-Channel MOSFET
AOWT6P/AOWFT6P 6V,A NChannel MOSFET General Description Trench Power AlphaMOSII technology Low R DS(ON) Low Ciss and Crss High Current Capability RoHS and Halogen Free Compliant Product Summary V DS @
More informationAO V N-Channel MOSFET
AO494 NChannel MOFET General escription Trench Power M MOFET technology Low R (ON) Low Gate Charge Optimized for fastswitching applications Product ummary I (at G =).5A R (ON) (at G =) < mω R (ON) (at
More informationAOTF9N V, 9A N-Channel MOSFET. V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 1.3Ω
9, 9A NChannel MOSFET General Description The AOTF9N9 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular
More informationAO4292E 100V N-Channel MOSFET
NChannel MOFET General escription Trench Power M MOFET technology Low R (ON) Low Gate Charge Optimized for fastswitching applications E protected RoH and HalogenFree Compliant Applications ynchronus Rectification
More informationAOT12N60FD/AOB12N60FD/AOTF12N60FD
6V, A NChannel MOSFET General Description The have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC DC applications.
More informationAO4264E 60V N-Channel AlphaSGT TM
6 NChannel AlphaGT TM General escription Trench Power AlphaGT TM technology Low R (ON) Low Gate Charge E protected Product ummary 6 I (at G =) 3.5A R (ON) (at G =) < 9.8mΩ R (ON) (at G =4.5) < 3.5mΩ Typical
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 100% UIS Tested 100% R g Tested. TO-262F Bottom View. Top View G D S S G. Symbol
AOWN65/AOWFN65 65V,A NChannel MOSFET General Description The AOWN65/AOWFN65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness
More informationAOTL V N-Channel AlphaSGT TM
AOTL664 4V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested G G S
AO49 NChannel AlphaMO General escription Trench Power AlphaMO (αmo M) technology Low R (ON) Low Gate Charge Optimized for fastswitching applications RoH and HalogenFree Compliant Product ummary I (at G
More informationAO4402G 20V N-Channel MOSFET
AOG V NChannel MOFET General escription Trench Power MOFET technology Low R (ON) RoH and HalogenFree Compliant Product ummary V I (at V G =.5V) R (ON) (at V G =.5V) R (ON) (at V G =.5V) V A < 5.9mΩ < 7.mΩ
More informationAON V P-Channel MOSFET
AON74 3V PChannel MOFET General escription The AON74 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 5V gate rating. This device is suitable for use as
More informationV DS I D (at V GS =-4.5V) R DS(ON) (at V GS =-1.8V) D1 G2 Bottom
2V Dual PChannel MOSFET General Description The AON283 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltage as low as.8v. This device is suitable
More informationAOE V Dual Asymmetric N-Channel AlphaMOS
AOE693 3V Dual Asymmetric N-Channel AlphaMOS General Description Bottom Source Technology Very Low R DS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary Q Q V
More information