V DS. ESD Protected 100% UIS Tested 100% R g Tested

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1 3V NChannel MOFET General escription The AO4468 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is ideal for load switch and battery protection applications. Product ummary V 3V I (at V G =V).A R (ON) (at V G =V) < 7mΩ R (ON) (at V G = 4.V) < 3mΩ * RoH and HalogenFree Compliant E Protected % UI Tested % R g Tested Top View OIC8 Bottom View G G Absolute Maximum Ratings T A = C unless otherwise noted Parameter ymbol Maximum rainource Voltage 3 Gateource Voltage Continuous rain Current Pulsed rain Current C T A = C T A =7 C V Avalanche Current C Avalanche energy L=.mH C I A, I AR E A, E AR 9 8 T A = C 3. P Power issipation B T A =7 C Junction and torage Temperature Range T J, T TG to Thermal Characteristics Parameter ymbol Typ Max Maximum JunctiontoAmbient A t s 3 4 R θja Maximum JunctiontoAmbient A teadytate 9 7 Maximum JunctiontoLead teadytate 6 4 V G I I M R θjl ±. 8. Units V V A A mj W C Units Rev.7.: July 3 Page of

2 Electrical Characteristics (T J = C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV rainource Breakdown Voltage I =µa, V G =V 3 V I V =3V, V G =V T J = C I G GateBody leakage current V =V, V G =±6V ± µa V G(th) Gate Threshold Voltage V =V G I =µa..8.4 V I (ON) On state drain current V G =V, V =V A R (ON) Zero Gate Voltage rain Current tatic rainource OnResistance V G =V, I =.A V G =4.V, I =9A 4 7 T J = C mω g F Forward Transconductance V =V, I =.A 36 V iode Forward Voltage I =A,V G =V.7 V I Maximum Bodyiode Continuous Current 4 A YNAMIC PARAMETER C iss Input Capacitance pf C oss Output Capacitance V G =V, V =V, f=mhz 4 pf C rss Reverse Transfer Capacitance 8 pf R g Gate resistance V G =V, V =V, f=mhz...7 Ω WITCHING PARAMETER Q g (V) Total Gate Charge nc Q g (4.V) Total Gate Charge 7. nc V G =V, V =V, I =.A Q gs Gate ource Charge. nc Q gd Gate rain Charge 3 nc t (on) TurnOn elaytime ns t r TurnOn Rise Time V G =V, V =V, R L =.4Ω, 3. ns t (off) TurnOff elaytime R GEN =3Ω 9 ns t f TurnOff Fall Time 3. ns t rr Body iode Reverse Recovery Time I F =.A, di/dt=a/µs 8 ns Q rr Body iode Reverse Recovery Charge I F =.A, di/dt=a/µs 9 nc A. The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A = C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T J(MAX) = C, using s junctiontoambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) = C. Ratings are based on low frequency and duty cycles to keep initialt J = C.. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. E. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.% max. F. These curves are based on the junctiontoambient thermal impedence which is measured with the device mounted on in FR4 board with oz. Copper, assuming a maximum junction temperature of T J(MAX) = C. The OA curve provides a single pulse rating. µa mω THI PROUCT HA BEEN EIGNE AN QUALIFIE FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM ARE NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY ARIING OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERVE THE RIGHT TO IMPROVE PROUCT EIGN, FUNCTION AN RELIABILITY WITHOUT NOTICE. Rev.7.: July 3 Page of

3 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 3 V 4V 3.V 3 V =V I (A) 3V I (A) V G =.V C C 3 4 V (Volts) Fig : OnRegion Characteristics (Note E) 3 4 V G (Volts) Figure : Transfer Characteristics (Note E).8 R (ON) (mω) V G =4.V V G =V Normalized OnResistance.6.4. V G =4.V I =9A V G =V I =.A 7 I (A) Figure 3: OnResistance vs. rain Current and Gate Voltage (Note E) Temperature ( C) Figure 4: OnResistance vs. Junction 8Temperature (Note E) R (ON) (mω) C I =.A I (A).E.E 4.E.E.E.E3 C C C V G (Volts) Figure : OnResistance vs. Gateource Voltage (Note E).E4.E V (Volts) Figure 6: Bodyiode Characteristics (Note E) Rev.7.: July 3 Page 3 of

4 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 8 V =V I =.A V G (Volts) 6 4 Capacitance (pf) C iss C oss Q g (nc) Figure 7: GateCharge Characteristics C rss 3 V (Volts) Figure 8: Capacitance Characteristics I (Amps) R (ON) limited T J(Max) = C T A = C.. V (Volts) Figure 9: Maximum Forward Biased afe Operating Area (Note F) µs µs ms ms s C Power (W) T A = C... Pulse Width (s) Figure : ingle Pulse Power Rating Junctionto Ambient (Note F) Z θja Normalized Transient Thermal Resistance... =T on /T T J,PK =T A P M.Z θja.r θja R θja =7 ingle Pulse In descending order =.,.3,.,.,.,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P T on T Rev.7.: July 3 Page 4 of

5 Gate Charge Test Circuit & Waveform Qg VC UT VC V Qgs Qgd Ig RL Resistive witching Test Circuit & Waveforms Charge Rg UT VC 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive witching (UI) Test Circuit & Waveforms L E = / LI AR AR BV Id Rg VC Id I AR UT iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L VC Isd I F di/dt I RM t rr Rev.7.: July 3 Page of