V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.38Ω. 100% UIS Tested 100% R g Tested TO-262F. Bottom View. Top View G D S S G D S G D.

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1 AOW4N5/AOWF4N5 5V, 4A NChannel MOFET General Description The AOW4N5 & AOWF4N5 have been fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.by providing low R D(on), C iss and C rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product ummary V D I D (at V G =V) 6V@5 4A R D(ON) (at V G =V) <.38Ω % UI Tested % R g Tested Top View TO262 Bottom View Top View TO262F Bottom View D G D G D G D Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter Drainource Voltage Gateource Voltage Continuous Drain Current T C = C ymbol V D Avalanche Current C Repetitive avalanche energy C I DM I AR E AR E A Pulsed Drain Current C V G ingle plused avalanche energy G 8 Peak diode recovery dv/dt dv/dt 5 Power Dissipation B T C =25 C P Derate above 25 o D C Junction and torage Temperature Range Maximum lead temperature for soldering T J, T TG 55 to 5 purpose, /8" from case for 5 seconds Thermal Characteristics T L 3 Parameter ymbol AOW4N5 AOWF4N5 Maximum JunctiontoAmbient A,D R θja Maximum Casetosink A R θc Maximum JunctiontoCase R θjc * Drain current limited by maximum junction temperature. I D AOW4N5 T C =25 C 4.45 G D 5 ±3 G AOWF4N5 4* * 4.5 Units V V A A mj mj V/ns W W/ o C C C Units C/W C/W C/W Prelim: July 2 Page of 6

2 AOW4N5/AOWF4N5 Electrical Characteristics (T J =25 C unless otherwise noted) ymbol TATIC PARAMETER BV D BV D / TJ I D Parameter Drainource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Conditions I D =25µA, V G =V, T J =25 C I D =25µA, V G =V, T J =5 C I D =25µA, V G =V V D =5V, V G =V V D =4V, T J =25 C Min Typ Max Units 5 6 V/ o C I G GateBody leakage current V D =V, V G =±3V ± nα V G(th) Gate Threshold Voltage V D =5V I D =25µA V R D(ON) tatic Drainource OnResistance V G =V, I D =7A Ω g F Forward Transconductance V D =4V, I D =7A 2 V D Diode Forward Voltage I =A,V G =V.7 V I Maximum BodyDiode Continuous Current 4 A I M Maximum BodyDiode Pulsed Current 56 A DYNAMIC PARAMETER C iss Input Capacitance pf C oss Output Capacitance V G =V, V D =25V, f=mhz pf C rss Reverse Transfer Capacitance pf R g Gate resistance V G =V, V D =V, f=mhz Ω WITCHING PARAMETER Q g Total Gate Charge nc Q gs Gate ource Charge V G =V, V D =4V, I D =4A nc Q gd Gate Drain Charge nc t D(on) TurnOn DelayTime ns t r TurnOn Rise Time V G =V, V D =25V, I D =4A, 84 ns t D(off) TurnOff DelayTime R G =25Ω 92 ns t f TurnOff Fall Time 5 6 ns t rr Body Diode Reverse Recovery Time I F =4A,dI/dt=A/µs,V D =V ns Q rr Body Diode Reverse Recovery Charge I F =4A,dI/dt=A/µs,V D =V µc A. The value of R θja is measured with the device in a still air environment with T A =25 C. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C, Ratings are based on low frequency and duty cycles to keep initial T J =25 C. D. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle % max. F. These curves are based on the junctiontocase thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The OA curve provides a single pulse rating. G. L=6mH, I A =6A, V DD =5V, R G =25Ω, tarting T J =25 C V µa THI PRODUCT HA BEEN DEIGNED AND QUALIFIED FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT DEVICE OR YTEM ARE NOT AUTHORIZED. AO DOE NOT AUME ANY LIABILITY ARIING OUT OF UCH APPLICATION OR UE OF IT PRODUCT. AO REERVE THE RIGHT TO IMPROVE PRODUCT DEIGN, FUNCTION AND RELIABILITY WITHOUT NOTICE. Rev2: July 2 Page 2 of 6

3 AOW4N5/AOWF4N5 TYPICAL ELECTRICAL AND THERMAL CHARACTERITIC 3 25 V 6.5V V D =4V 55 C I D (A) 2 5 6V I D (A) 25 C V G =5.5V 5 25 C V D (Volts) Fig : OnRegion Characteristics V G (Volts) Figure 2: Transfer Characteristics R D(ON) (Ω) V G =V I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage Normalized OnResistance E2 V G =V I D =7A Temperature ( C) Figure 4: OnResistance vs. Junction Temperature.E BV D (Normalized)..9 I (A).E 4.E.E2.E3 25 C 25 C.E T J ( C) Figure 5: Break Down vs. Junction Temperature.E V D (Volts) Figure 6: BodyDiode Characteristics (Note E) Rev2: July 2 Page 3 of 6

4 AOW4N5/AOWF4N5 TYPICAL ELECTRICAL AND THERMAL CHARACTERITIC 5 2 V D =4V I D =4A C iss V G (Volts) 9 6 Capacitance (pf) C oss C rss Q g (nc) Figure 7: GateCharge Characteristics. V D (Volts) Figure 8: Capacitance Characteristics I D (Amps). R D(ON) limited T J(Max) =5 C T C =25 C DC µs µs ms ms.s I D (Amps). R D(ON) limited T J(Max) =5 C T C =25 C DC µs µs ms ms.s s s. V D (Volts) Figure 9: Maximum Forward Biased afe Operating Area for AOW4N5 (Note F). V D (Volts) Figure : Maximum Forward Biased afe Operating Area for AOWF4N5 (Note F) 8 5 Current rating I D (A) T CAE ( C) Figure : Current Derating (Note B) Rev2: July 2 Page 4 of 6

5 AOW4N5/AOWF4N5 TYPICAL ELECTRICAL AND THERMAL CHARACTERITIC Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =.45 C/W ingle Pulse In descending order D=,.3,.,.5,.2,., single pulse P D T on T Pulse Width (s) Figure 2: Normalized Maximum Transient Thermal Impedance for AOW4N5 (Note F) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =4.5 C/W ingle Pulse In descending order D=,.3,.,.5,.2,., single pulse P D T on T Pulse Width (s) Figure 3: Normalized Maximum Transient Thermal Impedance for AOWF4N5 (Note F) Rev2: July 2 Page 5 of 6

6 AOW4N5/AOWF4N5 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge Resistive witching Test Circuit & Waveforms RL Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive witching (UI) Test Circuit & Waveforms L E = /2 LI AR 2 AR BV D Id Rg Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev2: July 2 Page 6 of 6