AOD407 P-Channel Enhancement Mode Field Effect Transistor

Transcription

1 AO47 PChannel Enhancement Mode Field Effect Transistor General escription The AO47 uses advanced trench technology to provide excellent R S(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the PAK package, this device is well suited for high current load applications. RoHS Compliant Halogen Free* Features V S (V) = V I = 1A (V GS = V) R S(ON) < 115mΩ (V GS = V) R S(ON) < 15mΩ (V GS = 4.5V) % UIS tested % RG tested TO5 PAK Top View Bottom View S G G S G S Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter rainsource Voltage GateSource Voltage Symbol V S V GS Maximum ± Continuous rain T C =5 C 1 Current G T C = C I Pulsed rain Current C Avalanche Current C I M I AR 3 1 Repetitive avalanche energy L=.1mH C E AR 3 T C =5 C 5 Power issipation B P T C = C 5 T A =5 C.5 P SM Power issipation A T A =7 C 1. Junction and Storage Temperature Range T J, T STG 55 to 175 Units V V A A mj W W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t s C/W Maximum JunctiontoAmbient A R θja SteadyState 4 5 C/W Maximum JunctiontoCase B SteadyState R θjc.5 3 C/W

2 AO47 Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV SS rainsource Breakdown Voltage I =5µA, V GS =V V I SS Zero Gate Voltage rain Current V S =4V, V GS =V.3 1 T J =55 C 5 µa I GSS GateBody leakage current V S =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V S =V GS I =5µA V I (ON) On state drain current V GS =V, V S =5V 3 A V GS =V, I =1A R S(ON) Static rainsource OnResistance T J =15 C 15 mω V GS =4.5V, I =A mω g FS Forward Transconductance V S =5V, I =1A 1. S V S iode Forward Voltage I S =1A,V GS =V.7 1 V I S Maximum Bodyiode Continuous Current 1 A YNAMIC PARAMETERS C iss Input Capacitance pf C oss Output Capacitance V GS =V, V S =3V, f=1mhz 114 pf C rss Reverse Transfer Capacitance 4 pf R g Gate resistance V GS =V, V S =V, f=1mhz 7 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge (V) 15. nc Q g (4.5V) Total Gate Charge (4.5V) nc V GS =V, V S =3V, I =1A Q gs Gate Source Charge 3 nc Q gd Gate rain Charge 3.5 nc t (on) TurnOn elaytime 9 ns t r TurnOn Rise Time V GS =V, V S =3V, R L =.5Ω, ns t (off) TurnOff elaytime R GEN =3Ω 5 ns t f TurnOff Fall Time 11 ns t rr Body iode Reverse Recovery Time I F =1A, di/dt=a/µs ns Q rr Body iode Reverse Recovery Charge I F =1A, di/dt=a/µs 3 nc A: The value of R θja is measured with the device mounted on 1in FR4 board with oz. Copper, in a still air environment with T A =5 C. The Power dissipation P SM is based on R θja and the maximum allowed junction temperature of 15 C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation P is based on T J(MAX) =175 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX) =175 C.. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures 1 to are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175 C. G. The maximum current rating is limited by bondwires. H. These tests are performed with the device mounted on 1 in FR4 board with oz. Copper, in a still air environment with T A =5 C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code X11 (Sep 1 ST ). Rev 7 : May THIS PROUCT HAS BEEN ESIGNE AN QUALIFIE FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS ARE NOT AUTHORIZE. AOS OES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PROUCTS. AOS RESERVES THE RIGHT TO IMPROVE PROUCT ESIGN, FUNCTIONS AN RELIABILITY WITHOUT NOTICE

3 AO47 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS I (A) V V 4.5V V GS =4V 3.5V 3V V 5V V S (Volts) Fig 1: OnRegion Characteristics I (A) 4 V S =5V 15 C 5 C V GS (Volts) Figure : Transfer Characteristics R S(ON) (mω) V GS =4.5V V GS =V Normalized OnResistance V GS =V I =1A V GS =4.5V I =A I (A) Figure 3: OnResistance vs. rain Current and Gate Voltage Temperature ( C) Figure 4: OnResistance vs. Junction Temperature 3 1.E1 R S(ON) (mω) C 15 C I =1A I S (A) 1.E 1.E1 1.E 1.E3 1.E4 15 C 5 C 1.E5 5 4 V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage 1.E V S (Volts) Figure : Bodyiode Characteristics

4 AO47 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 1 V S =3V I =1A C iss V GS (Volts) 4 Capacitance (pf) 4 C oss C rss Q g (nc) Figure 7: GateCharge Characteristics V S (Volts) Figure : Capacitance Characteristics. T J(Max) =175 C, T A =5 C I (Amps). 1. R S(ON) limited µs µs 1ms ms C Power (W) T J(Max) =175 C T C =5 C V S (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Figure : Single Pulse Power Rating Junctionto Case (Note F) Z θjc Normalized Transient Thermal Resistance =T on /T T J,PK =T C P M.Z θjc.r θjc R θjc =3 C/W Single Pulse In descending order =.5,.3,.1,.5,.,.1, single pulse Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) P T on T

5 AO47 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 14 I (A), Peak Avalanche Current 1 T A =5 C t A = L I BV V Power issipation (W) Time in avalanche, t A (s) Figure 1: Single Pulse Avalanche capability T CASE ( C) Figure 13: Power erating (Note B) T A =5 C Current rating I (A) T CASE ( C) Figure 14: Current erating (Note B) Power (W) Figure 15: Single Pulse Power Rating Junctionto Ambient (Note H) Z θja Normalized Transient Thermal Resistance =T on /T T J,PK =T A P M.Z θja.r θja R θja =5 C/W Single Pulse In descending order =.5,.3,.1,.5,.,.1, single pulse Figure 1: Normalized Maximum Transient Thermal Impedance (Note H) P T on T

6 AO47 Gate Charge Test Circuit & Waveform Qg UT V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & Waveforms ton toff td(on) tr td(off) t f Rg UT 9% % Id L Unclamped Inductive Switching (UIS) Test Circuit & Waveforms E = 1/ LI AR AR Rg UT Id BV SS I AR iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr