NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
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1 NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for Coil on Plug and Driver on Coil Applications Gate Emitter ESD Protection Temperature Compensated Gate Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Minimum Avalanche Energy 5 mj Gate Resistor (R G ) = 7 This is a Pb Free Device Applications Ignition Systems MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Collector Emitter Voltage V CES 365 V Gate Emitter Voltage V GE 5 V Collector Current T C = 25 C Pulsed I C 2 5 A DC A AC Continuous Gate Current I G. ma Transient Gate Current (t 2 ms, f Hz) I G 2 ma ESD (Charged Device Model) ESD 2. kv ESD (Human Body Model) R = 5, C = pf ESD ESD (Machine Model) R =, C = 2 pf ESD 5 V Total Power T C = 25 C Derate above 25 C (Note ) 8. P D 65. Operating & Storage Temperature Range T J, T stg 55 to +75 kv W W/ C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Assuming infinite heatsink Case to Ambient C 2 AMPS, 365 VOLTS V CE(on) =.75 V I C = A, V GE 4.5 V G R G R GE ORDERING INFORMATION Device Package Shipping NGB827ANT4G D 2 PAK (Pb Free) C E D 2 PAK CASE 48B STYLE 4 MARKING DIAGRAM Gate 4 Collector NGB 827AxG AYWW 2 Collector 3 Emitter NGB827Ax = Device Code x = N or B A = Assembly Location Y = Year WW = Work Week G = Pb Free Package NGB827ABNT4G D 2 PAK (Pb Free) 8 / Tape & Reel 8 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Semiconductor Components Industries, LLC, 2 December, 2 Rev. Publication Order Number: NGB827AN/D
2 NGB827AN, NGB827ABN UNCLAMPED COLLECTOR TO EMITTER AVALANCHE CHARACTERISTICS ( 4 T J 5 C) Characteristic Symbol Value Unit Single Pulse Collector to Emitter Avalanche Energy V CC = 5 V, V GE = V, Pk I L = 6.5 A, L = 3.7 mh, R g = k Starting T J = 25 C V CC = 5 V, V GE = V, Pk I L = A, L = 6. mh, R g = k Starting T J = 25 C Reverse Avalanche Energy V CC = V, V GE = 2 V, Pk I L = 25.8 A, L = 6. mh, Starting T J = 25 C THERMAL CHARACTERISTICS E AS 5 36 E AS(R) 2 mj mj Thermal Resistance, Junction to Case R JC.9 C/W Thermal Resistance, Junction to Ambient (Note 2) R JA 5 C/W Maximum Temperature for Soldering Purposes,.25 in from case for 5 seconds (Note 3) T L 275 C 2. When surface mounted to an FR4 board using the minimum recommended pad size. 3. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Clamp Voltage BV CES I C = 2. ma T J = 4 C to 5 C V I C = ma T J = 4 C to 5 C Zero Gate Voltage Collector Current I CES V CE = 24 V V GE = V T J = 25 C. 2. A Reverse Collector Emitter Clamp Voltage Reverse Collector Emitter Leakage Current B VCES(R) I CES(R) V CE = 25 V V GE = V I C = 75 ma V CE = 24 V T J = 25 C. 5 T J = 5 C 25 T J = 4 C T J = 25 C V T J = 5 C T J = 4 C T J = 25 C.5. ma T J = 5 C T J = 4 C.3. Gate Emitter Clamp Voltage BV GES I G = 5. ma T J = 4 C to 5 C V Gate Emitter Leakage Current I GES V GE = V T J = 4 C to 5 C 5 7 A Gate Resistor R G T J = 4 C to 5 C 7 Gate Emitter Resistor R GE T J = 4 C to 5 C k ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V GE(th) I C =. ma V GE = V CE T J = 25 C V T J = 5 C.7..3 T J = 4 C Threshold Temperature Coefficient (Negative) 4. mv/ C Collector to Emitter On Voltage V CE(on) I C = 6. A *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width 3 S, Duty Cycle 2%. I C = ma V GE = 4.5 V T J = 25 C V T J = 5 C T J = 4 C T J = 25 C.62. 2
3 NGB827AN, NGB827ABN ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions ON CHARACTERISTICS (Note 4) Collector to Emitter On Voltage V CE(on) I C = 8. A I C = A V GE = 3.7 V I C = A I C = A V GE = 4.5 V Forward Transconductance gfs I C = 6. A V CE = 5. V Temperature Min Typ Max Unit T J = 25 C V T J = 5 C T J = 4 C T J = 25 C T J = 5 C T J = 4 C T J = 25 C T J = 5 C T J = 4 C T J = 25 C T J = 5 C T J = 4 C T J = 25 C 5.8 Mhos DYNAMIC CHARACTERISTICS Input Capacitance C ISS pf Output Capacitance C f = khz OSS T V CE = 25 V J = 25 C Transfer Capacitance C RSS SWITCHING CHARACTERISTICS Turn On Delay Time (Resistive) Rise Time (Resistive) t d(on) V CE = 4 V T J = 25 C Sec R L =. t r V GE = 5. V R G = T J = 25 C Turn Off Delay Time (Resistive) Fall Time (Resistive) Turn On Delay Time (Resistive) Rise Time (Resistive) Turn Off Delay Time (Resistive) Fall Time (Resistive) t d(off) V CE = 4 V T J = 25 C R L =. t f V GE = 5. V R G = T J = 25 C 8. 3 t d(on) V CE = 3 V T J = 25 C R L = 46 t r V GE = 5. V R G = T J = 25 C t d(off) V CE = 3 V T J = 25 C R L = 46 t f V GE = 5. V R G = T J = 25 C 6. 5 *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width 3 S, Duty Cycle 2%. 3
4 NGB827AN, NGB827ABN TYPICAL ELECTRICAL CHARACTERISTICS I SCIS (A) C 5 C I SCIS (A) C 25 C V CE(on), COLLECTOR TO EMITTER VOLTAGE (V) L (mh) Figure. Typical Self Clamped Inductive Switching Performance (SCIS) T J = 4 C T J = 25 C. T J = 75 C I C, COLLECTOR CURRENT (A) 6 V CE(on), COLLECTOR TO EMITTER VOLTAGE (V) CLAMPING TIME ( S) Figure 2. Typical Self Clamped Inductive Switching Performance (SCIS) I C = 2 A I C = 6 A I C = A I C = 8. A I C = 6. A T J, JUNCTION TEMPERATURE ( C) Figure 3. Collector to Emitter Voltage vs. Collector Current Figure 4. Collector to Emitter Voltage vs. Junction Temperature I C, COLLECTOR CURRENT (A) V GE = 6. V 5. V V GE = 4.5 V V GE = 3.5 V V GE = 3. V V GE = 2.5 V V CE, COLLECTOR TO EMITTER VOLTAGE (V) I C, COLLECTOR CURRENT (A) V GE = 6. V 5. V 4.5 V V GE = 3.5 V V GE = 3. V V GE = 2.5 V V CE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. On Region T J = 25 C Figure 6. On Region T J = 4 C 4
5 NGB827AN, NGB827ABN TYPICAL ELECTRICAL CHARACTERISTICS I C, COLLECTOR CURRENT (A) V 5. V 4.5 V 4. V 3.5 V 3. V V GE = 2.5 V V CE, COLLECTOR TO EMITTER VOLTAGE (V) I C, COLLECTOR CURRENT (A) V CE 5. V T J = 4 C T J = 25 C T J = 75 C V GE, GATE TO EMITTER VOLTAGE (V) Figure 7. On Region T J = 75 C Figure 8. Transfer Characteristics LEAKAGE CURRENT ( A), V CE = 24 V V CE = 32 V V CE = 25 V V GE(th), GATE THRESHOLD VOLTAGE (V) 2. I C = ma, V CE = V GE T J, JUNCTION TEMPERATURE ( C) T J, JUNCTION TEMPERATURE ( C), C, CAPACITANCE (pf) Figure 9. Collector to Emitter Leakage Current vs. Junction Temperature C iss C oss C rss COLLECTOR TO EMITTER VOLTAGE (V) Figure. Capacitance Variation T J = 25 C V GE = V t, TIME ( s). 4 Figure. Gate Threshold Voltage vs. Temperature t f V CC = 4 V V GE = 5. V R L =. R G = k t r t d(off) t d(on) TEMPERATURE ( C) Figure 2. Resistive Switching Time Variation vs. Temperature 5
6 I C, COLLECTOR CURRENT (A). NGB827AN, NGB827ABN TYPICAL ELECTRICAL CHARACTERISTICS Single Pulse T C = 25 C V CE(on) LIMIT THERMAL LIMIT PACKAGE LIMIT Mounted on 2 sq. FR4 board ( sq. 2 oz. Cu.6 thick single sided) V CE, COLLECTOR EMITTER VOLTAGE (V) s s ms ms Figure 3. Forward Biased Safe Operating Area dc R JC(t), TRANSIENT THERMAL RESISTANCE ( C/W). Duty Cycle = Single Pulse DUTY CYCLE, D = t /t t,time (S) P (pk) t t 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T A = P (pk) R JC (t) Figure 4. Best Case Transient Thermal Resistance (Non normalized Junction to Case Mounted on Cold Plate) 6
7 NGB827AN, NGB827ABN PACKAGE DIMENSIONS D 2 PAK 3 CASE 48B 4 ISSUE J T SEATING PLANE B G S D 3 PL.3 (.5) M T B M K C H A E V W J W NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH B THRU 48B 3 OBSOLETE, NEW STANDARD 48B 4. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G. BSC 2.54 BSC H J K L M N.97 REF 5. REF P.79 REF 2. REF R.39 REF.99 REF S V U P L SOLDERING FOOTPRINT* STYLE 4: PIN. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR M F VIEW W W SCALE 3: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NGB827AN/D
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NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features
NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
TIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS
High Voltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features 25 V to V (Min) V
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors
MJH1117, MJH1119, MJH1121 () MJH1118, MJH112, MJH1122 () Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
NGTB15N60EG. IGBT - Short-Circuit Rated. 15 A, 600 V V CEsat = 1.7 V
NGTB5N6EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction
MJD (NPN) MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features Collector
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors
TIP120, TIP121, TIP122 (); TIP125, TIP126, TIP127 () Preferred Devices Plastic MediumPower Complementary Silicon Transistors Designed for generalpurpose amplifier and lowspeed switching applications. Features
BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features Pb Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Collector Base Voltage V CB 40 Collector
MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD () MJD7 () Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL
NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
NTP75N03L09, NTB75N03L09. Power MOSFET 75 Amps, 30 Volts. N Channel TO 220 and D 2 PAK. 75 AMPERES, 30 VOLTS R DS(on) = 8 m
NTP75NL9, NTB75NL9 Power MOSFET 75 Amps, Volts NChannel TO and D PAK This Logic Level Vertical Power MOSFET is a general purpose part that provides the best of design available today in a low cost power
MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
MMBZ5V6ALT1 Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT 23 Dual Common Anode Zeners for ESD Protection
4 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
NTMFS4936NCT3G. NTMFS4936NC Power MOSFET 30 V, 79 A, Single N Channel, SO 8 FL
NTMFS4936N, NTMFS4936NC Power MOSFET 3 V, 79 A, Single N Channel, Features Low R S(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, river and Switching Losses Next Generation Enhanced
MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications.
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers
MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
Adc. W W/ C T J, T stg 65 to C
Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =