NTB5605P, NTBV5605. Power MOSFET -60 V, A. P Channel, D 2 PAK
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1 NTB6P, NTBV6 Power OSFET -6 V, -8. A P Channel, D PAK Features Designed for Low R DS(on) Withstands High Energy in Avalanche and Commutation odes AEC Q Qualified NTBV6 These Devices are Pb Free and are RoHS Compliant Applications Power Supplies PW otor Control Converters Power anagement V (BR)DSS 6 V R DS(on) TYP V P Channel D G I D AX 8. A AXIU RATINGS ( unless otherwise noted) S Parameter Symbol Value Unit Drain to Source Voltage V DSS 6 V Gate to Source Voltage V GS V Continuous Drain Current (Note ) Power Dissipation (Note ) Steady State Steady State T A = C I D 8. A T A = C P D 88 W Pulsed Drain Current t p = s I D A Operating Junction and Storage Temperature T J, T STG Single Pulse Drain to Source Avalanche Energy (V DD = V, V GS =. V, I PK = A, L =. mh, R G = ) Lead Temperature for Soldering Purposes (/8 in from case for s) THERAL RESISTANCE RATINGS to 7 C E AS 8 mj T L 6 C Parameter Symbol ax Unit Junction to Case (Drain) Steady State R JC.7 C/W Stresses exceeding aximum Ratings may damage the device. aximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. When surface mounted to an FR board using pad size (Cu Area.7 in ).. When surface mounted to an FR board using the minimum recommended pad size (Cu Area. in ). D PAK CASE 8B STYLE x A Y WW G ARKING DIAGRA & PIN ASSIGNENT = P or blank = Assembly Location = Year = Work Week = Pb Free Package ORDERING INFORATION Device Package Shipping NTB6PTG NTBV6TG Gate D PAK (Pb Free) D PAK (Pb Free) Drain NTB6xG AYWW Drain Source 8 / Tape & Reel 8 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Semiconductor Components Industries, LLC, August, Rev. Publication Order Number: NTB6P/D
2 NTB6P, NTBV6 ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Test Condition in Typ ax Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage V (Br)DSS V GS = V, I D = A 6 V Drain to Source Breakdown Voltage Temperature Coefficient V (Br)DSS /T J 6 mv/ C Zero Gate Voltage Drain Current I DSS V GS = V. A V DS = 6 V Gate to Source Leakage Current I GSS V DS = V, V GS = V na ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(th) V GS = V DS, I D = A... V Drain to Source On Resistance R DS(on) V GS =. V, I D = 8. A V GS =. V, I D = 7 A m Forward Transconductance g FS V DS = V, I D = 8. A S Drain to Source On Voltage V DS(on) V GS =. V, I D = 8. A. V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C iss 7 9 Output Capacitance C oss V GS = V, f =. Hz, V DS = V Reverse Transfer Capacitance C rss 67 Total Gate Charge Q G(TOT) Gate to Source Charge Q GS V GS =. V, V DS = 8 V, I D = 7 A. Gate to Drain Charge Q GD 7. SWITCHING CHARACTERISTICS (Note ) Turn On Delay Time t d(on). Rise Time t r V GS =. V, V DD = V, 8 Turn Off Delay Time t d(off) I D = 7 A, R G = Fall Time t f 7 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD VGS = V I S = 7 A Reverse Recovery Time t rr.. V. Charge Time t a V GS = V, di S /dt = A/ s, 9 Discharge Time t b I S = 7 A Reverse Recovery Charge Q RR. nc. Pulse Test: Pulse Width s, Duty Cycle %.. Switching characteristics are independent of operating junction temperatures. 6 pf nc ns ns
3 NTB6P, NTBV6 V GS = V V GS = 9 V V GS = 6 V V GS = 8 V V V GS = 7 V GS =. V V GS = V V GS =. V V GS = V V GS =. V V GS = V V DS = V T J = C V GS, GATE TO SOURCE VOLTAGE (VOLTS) Figure. On Region Characteristics Figure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( ) V GS =. V T J = C R DS(on), DRAIN TO SOURCE RESISTANCE ( ) V GS =. V...7 V GS = V Figure. On Resistance vs. Drain Current and Temperature Figure. On Resistance vs. Drain Current and Gate Voltage R DS(on), DRAIN TO SOURCE RESISTANCE (NORALIZED) I D = 8. A V GS =. V 7 T J, JUNCTION TEPERATURE ( C) Figure. On Resistance Variation with Temperature I DSS, LEAKAGE (na) V GS = V T J = C 6 Figure 6. Drain to Source Leakage Current vs. Voltage
4 NTB6P, NTBV6 C, CAPACITANCE (pf) t, TIE (ns) GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation V GS = V V DS = V C iss C rss V GS V DS t r t f t d(off) R G, GATE RESISTANCE ( ) V GS, GATE TO SOURCE VOLTAGE (VOLTS) I S, SOURCE CURRENT (APS) E AS, SINGLE PULSE DRAIN TO SOURCE AVALANCHE ENERGY (mj) Q g, TOTAL GATE CHARGE (nc) t d(on) V DD = V I D = 7 A V GS =. V Figure 9. Resistive Switching Time Variation vs. Gate Resistance V GS = V SINGLE PULSE T C = C C rss dc ms ms s C iss C oss Figure. aximum Rated Forward Biased Safe Operating Area V GS I D = 7 A Figure 8. Gate to Source and Drain to Source Voltage vs. Total Charge V GS = V V SD, SOURCE TO DRAIN VOLTAGE (VOLTS) Figure. Diode Forward Voltage vs. Current I D = A R DS(on) Limit Thermal Limit s Package Limit V DS Q GS Q T Q DS T J, STARTING JUNCTION TEPERATURE ( C) Figure. aximum Avalanche Energy vs. Starting Junction Temperature 6 6
5 NTB6P, NTBV6 r(t), EFFECTIVE TRANSIENT THERAL RESISTANCE (NORALIZED) D =... SINGLE PULSE t, TIE (s). Figure. Thermal Response di/dt I S t rr t a t b TIE t p. I S I S Figure. Diode Reverse Recovery Waveform
6 NTB6P, NTBV6 PACKAGE DIENSIONS T SEATING PLANE B G S D PL. (.) T B K C H D PAK CASE 8B ISSUE K A E V W J W NOTES:. DIENSIONING AND TOLERANCING PER ANSI Y., 98.. CONTROLLING DIENSION: INCH.. 8B THRU 8B OBSOLETE, NEW STANDARD 8B. INCHES ILLIETERS DI IN AX IN AX A B C D E.... F G. BSC. BSC H J K L N.97 REF. REF P.79 REF. REF R.9 REF.99 REF S V.... VARIABLE CONFIGURATION ZONE R N U STYLE : PIN. GATE. DRAIN. SOURCE. DRAIN P L L L F F F VIEW W W VIEW W W VIEW W W SOLDERING FOOTPRINT* X. X.6.8 PITCH DIENSIONS: ILLIETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SOLDERR/D. 6
7 NTB6P, NTBV6 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORATION LITERATURE FULFILLENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado 87 USA Phone: 67 7 or 8 86 Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, iddle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTB6P/D
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More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
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