NTGS3443, NVGS3443. Power MOSFET 4.4 Amps, 20 Volts. P Channel TSOP AMPERES 20 VOLTS R DS(on) = 65 m
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- Kory Byrd
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1 NTGS, NVGS Power MOSFET., Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package These Devices are PbFree and are RoHS Compliant NVGS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable Applications Power Management in Portable and BatteryPowered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards. AMPERES VOLTS R DS(on) = 5 m PChannel 5 MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage V DSS Volts GatetoSource Voltage Continuous V GS Volts Thermal Resistance JunctiontoAmbient (Note ) Total Power T A = 5 C Drain Current T A = 5 C Pulsed Drain Current (T p S) Thermal Resistance JunctiontoAmbient (Note ) Total Power T A = 5 C Drain Current T A = 5 C Pulsed Drain Current (T p S) Thermal Resistance JunctiontoAmbient (Note ) Total Power T A = 5 C Drain Current T A = 5 C Pulsed Drain Current (T p S) R JA P d I D I DM R JA P d I D I DM R JA P d I D I DM Operating and Storage Temperature Range T J, T stg 55 to 5 Maximum Lead Temperature for Soldering Purposes for Seconds C/W Watts C/W Watts C/W Watts C T L C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Minimum FR or G PCB, operating to steady state.. Mounted onto a in square FR board ( in sq, oz. Cu.. thick single sided), operating to steady state.. Mounted onto a in square FR board ( in sq, oz. Cu.. thick single sided), t 5. seconds. TSOP CASE G STYLE ORDERING INFORMATION Device Package Shipping NTGSTG NVGSTG MARKING DIAGRAM & PIN ASSIGNMENT = Specific Device Code M = Date Code* = PbFree Package TSOP (PbFree) TSOP (PbFree) Drain Drain 5 Drain M Drain Source Gate (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D. Semiconductor Components Industries, LLC, December, Rev. 5 Publication Order Number: NTGST/D
2 NTGS, NVGS ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) (Notes & 5) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage (V GS = Vdc, I D = A) Zero Gate Voltage Drain Current (V GS = Vdc, V DS = Vdc, ) (V GS = Vdc, V DS = Vdc, T J = 7 C) GateBody Leakage Current (V GS = Vdc, V DS = Vdc) GateBody Leakage Current (V GS = + Vdc, V DS = Vdc) ON CHARACTERISTICS Gate Threshold Voltage (V DS = V GS, I D = 5 Adc) Static DrainSource OnState Resistance (V GS =.5 Vdc, I D =. Adc) (V GS =.7 Vdc, I D =.7 Adc) (V GS =.5 Vdc, I D =.5 Adc) Forward Transconductance (V DS = Vdc, I D =. Adc) V (BR)DSS I DSS. 5. I GSS I GSS V GS(th) R DS(on) g FS. Vdc Adc nadc nadc Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance C iss 55 pf Output Capacitance (V DS = 5. Vdc, V GS = Vdc, f =. MHz) C oss pf Reverse Transfer Capacitance C rss pf SWITCHING CHARACTERISTICS TurnOn Delay Time t d(on) 5 ns Rise Time (V DD = Vdc, I D =. Adc, t r 5 ns TurnOff Delay Time V GS =.5 Vdc, R g =. ) t d(off) 5 ns Fall Time t f 5 ns Total Gate Charge Q tot nc GateSource Charge (V DS = Vdc, V GS =.5 Vdc, I D =. Adc) Q gs. nc GateDrain Charge Q gd.9 nc BODYDRAIN DIODE RATINGS Diode Forward OnVoltage (I S =.7 Adc, V GS = Vdc) V SD.. Vdc Reverse Recovery Time (I S =.7 Adc, di S /dt = A/ s) t rr ns. Indicates Pulse Test: P.W. = sec max, Duty Cycle = %. 5. Handling precautions to protect against electrostatic discharge are mandatory.
3 NTGS, NVGS TYPICAL ELECTRICAL CHARACTERISTICS V GS = 5 V V GS =.5 V V DS = V I D, DRAIN CURRENT (AMPS) V GS = V V GS =.5 V V GS = V V GS =.5 V V GS = V V GS =.5 V I D, DRAIN CURRENT (AMPS) T J = 55 C V DS, DRAINTOSOURCE VOLTAGE (VOLTS) V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure. OnRegion Characteristics Figure. Transfer Characteristics R DS(on), DRAINTOSOURCE RESISTANCE (OHMS) R DS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) I D =. A V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure. OnResistance vs. GatetoSource Voltage I D =. A V GS =.5 V T J, JUNCTION TEMPERATURE ( C) Figure 5. OnResistance Variation with Temperature 5 R DS(on), DRAINTOSOURCE RESISTANCE (OHMS) I DSS, LEAKAGE (na) V GS =.5 V I D, DRAIN CURRENT (AMPS) V GS =.7 V V GS =.5 V Figure. OnResistance vs. Drain Current and Gate Voltage T J = C V GS = V. V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure. DraintoSource Leakage Current vs. Voltage
4 NTGS, NVGS TYPICAL ELECTRICAL CHARACTERISTICS C, CAPACITANCE (pf) V GS = V C iss C oss C rss V GS, GATETOSOURCE VOLTAGE (VOLTS) 5 Q Q QT V GS I D =. A V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 5 7 Q g, TOTAL GATE CHARGE (nc) Figure. GatetoSource and DraintoSource Voltage vs. Total Charge V GS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) I D = 5 A T J, JUNCTION TEMPERATURE ( C) Figure 9. Gate Threshold Voltage Variation with Temperature 5 I S, SOURCE CURRENT (AMPS) V GS = V T J = 5 C V SD, SOURCETODRAIN VOLTAGE (VOLTS) Figure. Diode Forward Voltage vs. Current
5 NTGS, NVGS TYPICAL ELECTRICAL CHARACTERISTICS POWER (W).... TIME (sec) Figure. Single Pulse Power. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE. Duty Cycle = Single Pulse. E E E E E+ SQUARE WAVE PULSE DURATION (sec) E+ E+ E+ Figure. Normalized Thermal Transient Impedance, JunctiontoAmbient 5
6 NTGS, NVGS PACKAGE DIMENSIONS TSOP CASE G ISSUE V E ÉÉÉ NOTE 5 e.5 A 5 D b E A c L H M DETAIL Z DETAIL Z L GAUGE PLANE C SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.5M, 99.. CONTROLLING DIMENSION: MILLIMETERS.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED.5 PER SIDE. DIMENSIONS D AND E ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. MILLIMETERS DIM MIN NOM MAX A.9.. A... b.5..5 c... D.9.. E E..5.7 e L... L.5 BSC M STYLE : PIN. DRAIN. DRAIN. GATE. SOURCE 5. DRAIN. DRAIN RECOMMENDED SOLDERING FOOTPRINT* X.. X PITCH DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5, Denver, Colorado 7 USA Phone: 7575 or Toll Free USA/Canada Fax: 757 or 7 Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: 955 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 575 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTGST/D
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Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
NTR4170NT3G. Power MOSFET. 30 V, 3.1 A, Single N Channel, SOT 23
NTR47N Power MOSFET V,. A, Single N Channel, SOT Features Low R S(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb Free evice Applications Power Converters for Portables Battery Management
MMDFS2P102. Power MOSFET 2 Amps, 20 Volts. P Channel SO 8, FETKY. 2 AMPERES 20 VOLTS R DS(on) = 160 m V F = 0.39 Volts
MMDFS2P12 Power MOSFET 2 Amps, 2 Volts PChannel SO8, FETKY The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky
MMDFS6N303. Power MOSFET 6 Amps, 30 Volts. N Channel SO 8, FETKY. 6 AMPERES 30 VOLTS R DS(on) = 35 m V F = 0.42 Volts
Power MOSFET 6 Amps, 3 Volts NChannel SO8, FETKY The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
BS107, BS107A. Small Signal MOSFET 250 mamps, 200 Volts N Channel TO ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.
Preferred Device Small Signal MOSFET 250 mamps, 200 Volts NChannel Features PbFree Package is Available* 250 ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.4 (BS107A) MAXIMUM RATINGS Rating Symbol Value
NTMFS5C604NL. Power MOSFET. 60 V, 1.2 m, 276 A, Single N Channel
NTMFSC64NL Power MOSFET 6 V,. m, 76 A, Single N Channel Features Small Footprint (x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
Extended V GSS range ( 25V) for battery applications
Dual Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
NSS60601MZ4. 60 V, 6.0 A, Low V CE(sat) NPN Transistor. 60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 50 m
NSS66MZ 6 V, 6. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and high
NUD3124, SZNUD3124. Automotive Inductive Load Driver
Automotive Inductive Load Driver This microintegrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a freewheeling
NTMFS5H409NL. Power MOSFET. 40 V, 1.1 m, 270 A, Single N Channel
Power MOSFET 4 V,. m, 7 A, Single N Channel Features Small Footprint (5x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These evices are
NSS40301MZ4. Bipolar Power Transistors 40 V, 3.0 A, Low V CE(sat) NPN Transistor NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
NSS3MZ Bipolar Power Transistors V, 3. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage
NSS40201LT1G NSV40201LT1G. 40 V, 2.0 A, Low V CE(sat) NPN Transistor. 40 VOLTS, 2.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS42LTG, NSV42LTG 4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage
NTMFS4936NCT3G. NTMFS4936NC Power MOSFET 30 V, 79 A, Single N Channel, SO 8 FL
NTMFS4936N, NTMFS4936NC Power MOSFET 3 V, 79 A, Single N Channel, Features Low R S(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, river and Switching Losses Next Generation Enhanced
NTD20N06. Power MOSFET 20 Amps, 60 Volts, N Channel DPAK
NTDN6 Power MOSFET Amps, 6 Volts, NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Lower R
MTW32N20EG. Power MOSFET 32 Amps, 200 Volts. N Channel TO AMPERES, 200 VOLTS R DS(on) = 75 m
MTW3NE Power MOSFET 3 Amps, Volts NChannel TO47 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource
NTD Power MOSFET. 12 A, 60 V, N Channel DPAK
NTD55-9 Power MOSFET A, 6 V, NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Lower R DS(on)
MMBTA05L, MMBTA06L. Driver Transistors. NPN Silicon
Driver Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ0 Qualified and PPAP Capable These Devices are
NTD20N06L, NTDV20N06L. Power MOSFET 20 Amps, 60 Volts. Logic Level, N Channel DPAK
NTDN6L, NTDVN6L Power MOSFET Amps, 6 Volts Logic Level, NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
NJTN, NJVNTG, NJVNTG Bipolar Power Transistors NPN Silicon Features Epoxy Meets UL 9, V @.5 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ
MMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
FDMA3028N. Dual N-Channel PowerTrench MOSFET. FDMA3028N Dual N-Channel PowerTrench MOSFET. 30 V, 3.8 A, 68 mω Features. General Description
FDMA38N Dual N-Channel PowerTrench MOSFET 3 V, 3.8 A, 68 mω Features Max. R DS(on) = 68 mω at V GS =.5 V, I D = 3.8 A Max. R DS(on) = 88 mω at V GS =.5 V, I D = 3. A Max. R DS(on) = 3 mω at V GS =.8 V,
MTW3NE ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise noted) OFF CHARACTERISTICS DrainSource Breakdown Voltage (V GS = V, I D = 5 Adc) Tempera
MTW3NE Preferred Device Power MOSFET 3 Amps, Volts NChannel TO47 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design
Dual N-Channel, Digital FET
FDG6301N-F085 Dual N-Channel, Digital FET Features 25 V, 0.22 A continuous, 0.65 A peak. R DS(ON) = 4 @ V GS = 4.5 V, R DS(ON) = 5 @ V GS = 2.7 V. Very low level gate drive requirements allowing directoperation
NTMFS4H01N Power MOSFET
NTMFS4HN Power MOSFET V, 334 A, Single N Channel, SO 8FL Features Optimized esign to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
NTD20N06L, NTDV20N06L. Power MOSFET. 20 A, 60 V, Logic Level, N Channel DPAK/IPAK
NTDN6L, NTDVN6L Power MOSFET A, 6 V, Logic Level, NChannel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G. 60 V, 6.0 A, Low V CE(sat) PNP Transistor
NSS66MZ, NSV66MZTG, NSV66MZT3G 6 V, 6. A, Low V CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage
FDD V P-Channel POWERTRENCH MOSFET
3 V P-Channel POWERTRENCH MOSFET General Description This P Channel MOSFET is a rugged gate version of ON Semiconductor s advanced POWERTRENCH process. It has been optimized for power management applications
MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
NSS12100M3T5G. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 350 m
NSSMTG, A, Low CE(sat) PNP Transistor ON Semiconductor's e PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and high current
NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS3MDR2G Dual Matched V, 6. A, Low V CE(sat) NPN Transistor These transistors are part of the ON Semiconductor e 2 PowerEdge family of Low V CE(sat) transistors. They are assembled to create a pair of
P-Channel PowerTrench MOSFET
FDD4685-F085 P-Channel PowerTrench MOSFET -40 V, -32 A, 35 mω Features Typical R DS(on) = 23 m at V GS = -10V, I D = -8.4 A Typical R DS(on) = 30 m at V GS = -4.5V, I D = -7 A Typical Q g(tot) = 19 nc
MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR3LSFTG Surface Mount Schottky Power Rectifier Plastic SOD 23 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high
NTJS3151P. Trench Power MOSFET. 12 V, 3.3 A, Single P Channel, ESD Protected SC 88
NTJS5P Trench Power MOSFET V,. A, Single P Channel, ES Protected SC 88 Features Leading Trench Technology for Low R S(ON) Extending Battery Life SC 88 Small Outline (x mm, SC7 Equivalent) Gate iodes for
MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon
MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors
MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP) High oltage Power Transistors for Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
N-Channel Logic Level PowerTrench MOSFET
FDN56N-F85 N-Channel Logic Level PowerTrench MOSFET 6 V,.6 A, 98 mω Features R DS(on) = 98 mω at V GS = 4.5 V, I D =.6 A R DS(on) = 8 mω at V GS = V, I D =.7 A Typ Q g(tot) = 9. nc at V GS = V Low Miller
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
FDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω
FDS935 Dual P-Channel PowerTrench MOSFET - V, -. A, 3 mω Features Max r DS(on) = 3 mω at V GS = - V, I D = -. A Max r DS(on) = 7 mω at V GS = -.5 V, I D = -.9 A High performance trench technology for extremely