MMDFS6N303. Power MOSFET 6 Amps, 30 Volts. N Channel SO 8, FETKY. 6 AMPERES 30 VOLTS R DS(on) = 35 m V F = 0.42 Volts
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1 Power MOSFET 6 Amps, 3 Volts NChannel SO8, FETKY The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, BuckBoost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products. Features Power MOSFET with Low V F Lower Component Placement and Inventory Costs along with Board Space Savings Logic Level Gate Drive Can be Driven by Logic ICs Mounting Information for SO8 Package Provided Applications Information Provided R2 Suffix for Tape and Reel (25 units/13 reel) Marking: 6N33 MOSFET MAXIMUM RATINGS ( unless otherwise noted) (Note 1) Rating Symbol Value Unit DraintoSource Voltage V DSS 3 Vdc DraintoGate Voltage (R GS = M ) V DGR 3 Vdc GatetoSource Voltage Continuous V GS 2 Vdc Drain Current (Note 2) T A = 25 C Single Pulse (tp s) Total Power T A = 25 C (Note 2) Single Pulse DraintoSource Avalanche Energy Startin V DD = 3 Vdc, V GS = 5. Vdc, V DS = 2 Vdc, I L = 9. Apk, L = mh, R G = 25 I D 6. I DM 3 Adc Apk P D Watts E AS 325 mj 1. Pulse Test: Pulse Width 25 s, Duty Cycle %. 2. Mounted on 2 square FR4 board (1 sq. 2 oz. Cu.6 thick single sided), sec. max. 8 6 AMPERES 3 VOLTS R DS(on) = 35 m V F =.42 Volts G SO8 CASE 751 STYLE 18 A L Y W 1 NChannel D S PIN ASSIGNMENT Anode 1 8 Anode Source Gate Top View MARKING DIAGRAM Cathode Cathode Drain Drain ORDERING INFORMATION 8 1 = Assembly Location = Wafer Lot = Year = Work Week 6N33 ALYW Device Package Shipping R2 SO8 25/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD811/D. Semiconductor Components Industries, LLC, 26 August, 26 Rev. 3 1 Publication Order Number: /D
2 SCHOTTKY RECTIFIER MAXIMUM RATINGS ( unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage V RRM 3 Volts V R Average Forward Current (Note 3) (Rated V R ) T A = 4 C Peak Repetitive Forward Current (Note 3) (Rated V R, Square Wave, 2 khz) T A = 8 C I O I frm Amps Amps NonRepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 6 Hz) I fsm 3 Amps THERMAL CHARACTERISTICS SCHOTTKY AND MOSFET Thermal Resistance JunctiontoAmbient (Note 4) MOSFET R JA 167 C/W Thermal Resistance JunctiontoAmbient (Note 5) MOSFET R JA 97 Thermal Resistance JunctiontoAmbient (Note 2) MOSFET R JA 62.5 Thermal Resistance JunctiontoAmbient (Note 4) Schottky R JA 197 Thermal Resistance JunctiontoAmbient (Note 5) Schottky R JA 97 Thermal Resistance JunctiontoAmbient (Note 3) Schottky R JA 62.5 Operating and Storage Temperature Range T j, T stg 55 to 15 MOSFET ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) (Note 6) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Voltage (V GS = Vdc, I D =.25 ma) Temperature Coefficient (Positive) Zero Gate Drain Current (V DS = 24 Vdc, V GS = Vdc) (V DS = 24 Vdc, V GS = Vdc, T J = 125 C) V (BR)DSS 3 I DSS Gate Body Leakage Current (V GS = ± 2 Vdc, V DS = ) I GSS nadc ON CHARACTERISTICS (Note 6) Gate Threshold Voltage (V DS = V GS, I D =.25 ma) Temperature Coefficient (Negative) Static DrainSource Resistance (V GS = Vdc, I D = 5. Adc) (V GS = 4.5 Vdc, I D = 3.9 Adc) V GS(th) R DS(on) Forward Transconductance (V DS = 15 Vdc, I D = 5. Adc) g FS 9. mhos DYNAMIC CHARACTERISTICS Input Capacitance C iss 43 6 pf Output Capacitance (V DS = 24 Vdc, V GS = Vdc, f = MHz) C oss Reverse Transfer Capacitance C rss Mounted on 2 square FR4 board (1 sq. 2 oz. Cu.6 thick single sided), sec. max. 4. Mounted with minimum recommended pad size, PC Board FR4. 5. Mounted on 2 square FR4 board (1 sq. 2 oz. Cu.6 thick single sided), Steady State. 6. Pulse Test: Pulse Width 3 μs, Duty Cycle % Vdc mv/ C Adc Vdc m 2
3 MOSFET ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) (Note 7) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 8) TurnOn Delay Time t d(on) ns Rise Time (V DD = 15 Vdc, I D = Adc, t r TurnOff Delay Time V GS = Vdc, R G = 6. Ω) t d(off) Fall Time t f Gate Charge DRAIN SOURCE DIODE CHARACTERISTICS Forward OnVoltage (Note 7) Reverse Recovery Time (V DS = 15 Vdc, I D = 5. Adc, V GS = Vdc) (I S = 1.7 Adc, V GS = Vdc) (V GS = V, I S = 5. A, dis/dt = A/ s) Q T nc Q 1 Q Q V SD Vdc t rr 54.5 ns t a 14.8 t b 39.7 Reverse Recovery Stored Charge Q RR.48 C SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Maximum Instantaneous Forward Voltage (Note 7) I F = madc I F = 3. Adc I F = 6. Adc Maximum Instantaneous Reverse Current (Note 7) V R = 3 V V F T J = 125 C Volts I R T J = 125 C A ma Maximum Voltage Rate of Change V R = 3 V dv/dt, V/ s 7. Pulse Test: Pulse Width 3 s, Duty Cycle %. 8. Switching characteristics are independent of operating junction temperature. 3
4 I TYPICAL FET ELECTRICAL CHARACTERISTICS I D, DRAIN CURRENT (AMPS) V 4.5 V 3.9 V 3.5 V 3.3 V V GS = 2.9 V D, DRAIN CURRENT (AMPS) V DS V 25 C 125 C T J = 55 C V DS, DRAINTOSOURCE VOLTAGE (VOLTS) V GS, GATETOSOURCE VOLTAGE (VOLTS) 5.5 Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics, DRAINTOSOURCE RESISTANCE (OHMS) DS(on) R I D = 6. A R DS(on), DRAINTOSOURCE RESISTANCE (OHMS) V GS = 4.5 V V GS, GATETOSOURCE VOLTAGE (VOLTS) I D, DRAIN CURRENT (AMPS) V R DS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) Figure 3. OnResistance versus GateToSource Voltage V GS = V I D = 6. A T J, JUNCTION TEMPERATURE ( C) I DSS, LEAKAGE (na) Figure 4. OnResistance versus Drain Current and Gate Voltage V GS = V T J = 125 C C V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure 5. OnResistance Variation with Temperature Figure 6. DrainToSource Leakage Current versus Voltage 4
5 TYPICAL FET ELECTRICAL CHARACTERISTICS C, CAPACITANCE (pf) C iss C rss V DS = V GS = C oss C rss Q3 V DS V GS V DS GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation C iss, GATETOSOURCE VOLTAGE (VOLTS) GS V Q1 Q2 Q T Q G, TOTAL GATE CHARGE (nc) V GS I D = 5. A 16 Figure 8. GateToSource and DrainToSource Voltage versus Total Charge t, TIME (ns) t d(off) t f t r t d(on) I S, SOURCE CURRENT (AMPS) 3. V GS = V R G, GATE RESISTANCE (OHMS) V SD, SOURCETODRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure. Diode Forward Voltage versus Current I D, DRAIN CURRENT (AMPS) Mounted on 2 sq. FR4 board (1 sq. 2 oz. Cu.6 thick single sided) with one die operating, s max. ms V GS = 12 V SINGLE PULSE T C = 25 C dc R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT ms E AS, SINGLE PULSE DRAINTOSOURCE AVALANCHE ENERGY (mj) I D = 6. A V DS, DRAINTOSOURCE VOLTAGE (VOLTS) T J, STARTING JUNCTION TEMPERATURE ( C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 5
6 TYPICAL FET ELECTRICAL CHARACTERISTICS D =.5 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE CHIP JUNCTION F F F F F SINGLE PULSE AMBIENT t, TIME (s) Figure 13. FET Thermal Response I S di/dt t rr t a t b TIME t p.25 I S I S Figure 14. Diode Reverse Recovery Waveform TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS I F, INSTANTANEOUS FORWARD CURRENT (AMPS) 85 C 25 C T J = 125 C I F, INSTANTANEOUS FORWARD CURRENT (AMPS) 85 C 4 C T J = 125 C 25 C V F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V F, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage 6
7 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS I R, REVERSE CURRENT (AMPS) T J = 125 C 85 C 25 C I R, MAXIMUM REVERSE CURRENT (AMPS).1 T J = 125 C C V R, REVERSE VOLTAGE (VOLTS) V R, REVERSE VOLTAGE (VOLTS) Figure 17. Typical Reverse Current Figure 18. Maximum Reverse Current C, CAPACITANCE (pf) I O, AVERAGE FORWARD CURRENT (AMPS) V R, REVERSE VOLTAGE (VOLTS) T A, AMBIENT TEMPERATURE ( C) dc SQUARE WAVE I pk /I o = I pk /I o = 5. I pk /I o = I pk /I o = 2 FREQ = 2 khz Figure 19. Typical Capacitance Figure 2. Current Derating P FO, AVERAGE POWER DISSIPATION (WATTS) I pk /I o = 2 I pk /I o = I pk /I o = 5. I pk /I o = 3. SQUARE WAVE dc 5. I O, AVERAGE FORWARD CURRENT (AMPS) Figure 21. Forward Power Dissipation 7
8 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS D =.5 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE CHIP JUNCTION NORMALIZED TO R JA AT STEADY STATE (1 PAD) F F F F F SINGLE PULSE AMBIENT.1 E5 E4 E3 E2 E1 E E1 E2 E3 t, TIME (s) Figure 22. Schottky Thermal Response TYPICAL APPLICATIONS STEP DOWN SWITCHING REGULATORS L O V in C O V out LOAD Buck Regulator L O V in C O V out LOAD Synchronous Buck Regulator 8
9 TYPICAL APPLICATIONS STEP UP SWITCHING REGULATORS L1 V in C O V out LOAD Q1 Boost Regulator V in C O V out LOAD BuckBoost Regulator MULTIPLE BATTERY CHARGERS Buck Regulator/Charger V in Q1 D1 L O C O Q2 D2 BATT #1 Q3 D3 BATT #2 9
10 TYPICAL APPLICATIONS Lilon BATTERY PACK APPLICATIONS Battery Pack PACK LiIon BATTERY CELLS SMART IC DISCHARGE CHARGE Q1 Q2 PACK SCHOTTKY SCHOTTKY Applicable in battery packs which require a high current level. During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. Under normal operation, both transistors are on.
11 PACKAGE DIMENSIONS SO8 CASE 7517 ISSUE AB X B Y 8 1 A 5 4 S.25 (.) M Y M K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION.15 (.6) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.127 (.5) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION THRU 7516 ARE OBSOLETE. NEW STANDARD IS Z H G D C.25 (.) M Z Y S X S SEATING PLANE. (.4) N X 45 M J MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G 1.27 BSC.5 BSC H J K M 8 8 N S SOLDERING FOOTPRINT* STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE SCALE 6:1 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY is a trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. /D
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NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
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NTD55-9 Power MOSFET A, 6 V, NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Lower R DS(on)
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NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
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NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
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ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Cpk 2.) (Note ) (V GS =, I D =.2 madc) Temperature Coefficient
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Preferred Device Small Signal MOSFET 250 mamps, 200 Volts NChannel Features PbFree Package is Available* 250 ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.4 (BS107A) MAXIMUM RATINGS Rating Symbol Value
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NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
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NTD8N2 Power MOSFET 8 Amps, 2 Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Package
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NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
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NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
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More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
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NTDN6L, NTDVN6L Power MOSFET Amps, 6 Volts Logic Level, NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
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MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
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NTDN6L, NTDVN6L Power MOSFET A, 6 V, Logic Level, NChannel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
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MTW3NE Power MOSFET 3 Amps, Volts NChannel TO47 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource
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MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
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Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
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Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
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NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
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MBR3LSFTG Surface Mount Schottky Power Rectifier Plastic SOD 23 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high
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Power MOSFET 3 V, A, Dual NChannel SOIC Features Designed for use in low voltage, high speed switching applications Ultra Low OnResistance Provides Higher Efficiency and Extends Battery Life R DS(on) =.,
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MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
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NTPN Preferred Device Power MOSFET A, V, NChannel EnhancementMode TO Features SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Avalanche Energy Specified I DSS and R DS(on)
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NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
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