NTGS3443T1. Power MOSFET 2 Amps, 20 Volts. P Channel TSOP 6. 2 AMPERES 20 VOLTS R DS(on) = 65 m

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NTGST Power MOSFET, Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package PbFree Package is Available Applications Power

1 NTGST Power MOSFET, Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package PbFree Package is Available Applications Power Management in Portable and BatteryPowered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards AMPERES VOLTS R DS(on) = 5 m PChannel 5 MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage V DSS Volts GatetoSource Voltage Continuous V GS Volts Thermal Resistance JunctiontoAmbient (Note ) Total Power T A = 5 C Drain Current T A = 5 C Pulsed Drain Current (T p S) Thermal Resistance JunctiontoAmbient (Note ) Total Power T A = 5 C Drain Current T A = 5 C Pulsed Drain Current (T p S) Thermal Resistance JunctiontoAmbient (Note ) Total Power T A = 5 C Drain Current T A = 5 C Pulsed Drain Current (T p S) R JA P d I D I DM R JA P d I D I DM R JA P d I D I DM Operating and Storage Temperature Range T J, T stg 55 to 5 Maximum Lead Temperature for Soldering Purposes for Seconds C/W Watts C/W Watts C/W Watts C T L C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. Minimum FR or G PCB, operating to steady state.. Mounted onto a in square FR board ( in sq, oz. Cu.. thick single sided), operating to steady state.. Mounted onto a in square FR board ( in sq, oz. Cu.. thick single sided), t 5. seconds. TSOP CASE G STYLE MARKING DIAGRAM & PIN ASSIGNMENT Drain Drain 5 Drain M Drain = Specific Device Code M = Date Code* = PbFree Package Source Gate (Note: Microdot may be in either location) * Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NTGST TSOP Tape & Reel NTGSTG TSOP Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D. Semiconductor Components Industries, LLC, February, Rev. Publication Order Number: NTGST/D

2 NTGST ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) (Notes & 5) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage (V GS = Vdc, I D = A) V (BR)DSS Vdc Zero Gate Voltage Drain Current (V GS = Vdc, V DS = Vdc, ) (V GS = Vdc, V DS = Vdc, T J = 7 C) I DSS. 5. Adc GateBody Leakage Current (V GS = Vdc, V DS = Vdc) GateBody Leakage Current (V GS = + Vdc, V DS = Vdc) ON CHARACTERISTICS Gate Threshold Voltage (V DS = V GS, I D = 5 Adc) Static DrainSource OnState Resistance (V GS =.5 Vdc, I D =. Adc) (V GS =.7 Vdc, I D =.7 Adc) (V GS =.5 Vdc, I D =.5 Adc) Forward Transconductance (V DS = Vdc, I D =. Adc) I GSS I GSS V GS(th) R DS(on) g FS. nadc nadc Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance C iss 55 pf Output Capacitance (V DS = 5. Vdc, V GS = Vdc, f =. MHz) C oss pf Reverse Transfer Capacitance C rss pf SWITCHING CHARACTERISTICS TurnOn Delay Time t d(on) 5 ns Rise Time (V DD = Vdc, I D =. Adc, t r 5 ns TurnOff Delay Time V GS =.5 Vdc, R g =. ) t d(off) 5 ns Fall Time t f 5 ns Total Gate Charge Q tot nc GateSource Charge (V DS = Vdc, V GS =.5 Vdc, I D =. Adc) Q gs. nc GateDrain Charge Q gd.9 nc BODYDRAIN DIODE RATINGS Diode Forward OnVoltage (I S =.7 Adc, V GS = Vdc) V SD.. Vdc Reverse Recovery Time (I S =.7 Adc, di S /dt = A/ s) t rr ns. Indicates Pulse Test: P.W. = sec max, Duty Cycle = %. 5. Handling precautions to protect against electrostatic discharge are mandatory.

3 NTGST TYPICAL ELECTRICAL CHARACTERISTICS V GS = 5 V V GS =.5 V V DS = V I D, DRAIN CURRENT (AMPS) V GS = V V GS =.5 V V GS = V V GS =.5 V V GS = V V GS =.5 V I D, DRAIN CURRENT (AMPS) T J = 55 C V DS, DRAINTOSOURCE VOLTAGE (VOLTS) V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure. OnRegion Characteristics Figure. Transfer Characteristics R DS(on), DRAINTOSOURCE RESISTANCE (OHMS) R DS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) I D =. A V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure. OnResistance vs. GatetoSource Voltage I D =. A V GS =.5 V T J, JUNCTION TEMPERATURE ( C) Figure 5. OnResistance Variation with Temperature 5 R DS(on), DRAINTOSOURCE RESISTANCE (OHMS) I DSS, LEAKAGE (na) V GS =.5 V I D, DRAIN CURRENT (AMPS) V GS =.7 V V GS =.5 V Figure. OnResistance vs. Drain Current and Gate Voltage T J = C V GS = V. V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure. DraintoSource Leakage Current vs. Voltage

4 NTGST TYPICAL ELECTRICAL CHARACTERISTICS C, CAPACITANCE (pf) V GS = V C iss C oss C rss V GS, GATETOSOURCE VOLTAGE (VOLTS) 5 Q Q QT V GS I D =. A V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 5 7 Q g, TOTAL GATE CHARGE (nc) Figure. GatetoSource and DraintoSource Voltage vs. Total Charge V GS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) I D = 5 A T J, JUNCTION TEMPERATURE ( C) Figure 9. Gate Threshold Voltage Variation with Temperature 5 I S, SOURCE CURRENT (AMPS) V GS = V T J = 5 C V SD, SOURCETODRAIN VOLTAGE (VOLTS) Figure. Diode Forward Voltage vs. Current

5 NTGST TYPICAL ELECTRICAL CHARACTERISTICS POWER (W).... TIME (sec) Figure. Single Pulse Power. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE. Duty Cycle = Single Pulse. E E E E E+ SQUARE WAVE PULSE DURATION (sec) E+ E+ E+ Figure. Normalized Thermal Transient Impedance, JunctiontoAmbient 5

6 NTGST PACKAGE DIMENSIONS TSOP CASE G ISSUE P H E D 5 E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 9.. CONTROLLING DIMENSION: MILLIMETER.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS..5 (.) e A b A L c MILLIMETERS DIM MIN NOM MAX MIN A A.... b c.... D.9... E e INCHES NOM MAX L H E STYLE : PIN. DRAIN. DRAIN. GATE. SOURCE 5. DRAIN. DRAIN SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box, Phoenix, Arizona 5 USA Phone: 977 or Toll Free USA/Canada Fax: 9779 or 7 Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: 955 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 55 Phone: 5775 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NTGST/D

NTGS3443T1. Power MOSFET 2 Amps, 20 Volts P Channel TSOP 6. 2 AMPERES 20 VOLTS R DS(on) = 65 m

NTGS3443T1. Power MOSFET 2 Amps, 20 Volts P Channel TSOP 6. 2 AMPERES 20 VOLTS R DS(on) = 65 m NTGST Power MOSFET, Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package PbFree Package May be Available. The GSuffix Denotes a