NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
|
|
- Darrell Lamb
- 5 years ago
- Views:
Transcription
1 NSS3MDR2G Dual Matched V, 6. A, Low V CE(sat) NPN Transistor These transistors are part of the ON Semiconductor e 2 PowerEdge family of Low V CE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low saturation voltage V CE(sat), high current gain and Base/Emitter turn on voltage. Typical applications are current mirrors, differential amplifiers, DCDC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e 2 PowerEdge devices to be driven directly from PMU s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features Current Gain Matching to % Base Emitter Voltage Matched to 2 mv This is a PbFree Device MAXIMUM RATINGS () Rating Symbol Max Unit Collector-Emitter Voltage V CEO Vdc Collector-Base Voltage V CBO Vdc Emitter-Base Voltage V EBO 6. Vdc Collector Current Continuous I C 3. A Collector Current Peak I CM 6. A Electrostatic Discharge ESD HBM Class 3B MM Class C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. VOLTS 6. AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) m 2 BASE COLLECTOR 7,8 EMITTER BASE SOIC8 CASE 75 STYLE 6 DEVICE MARKING 8 8 N3 AYWW COLLECTOR 5,6 3 EMITTER N3 = Specific Device Code A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NSS3MDR2G SOIC8 (PbFree) 25 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Semiconductor Components Industries, LLC, 28 May, 28 Rev. Publication Order Number: NSS3MD/D
2 NSS3MDR2G THERMAL CHARACTERISTICS SINGLE HEATED Total Device Dissipation (Note ) Characteristic Symbol Max Unit P D / C Thermal Resistance, JunctiontoAmbient (Note ) R JA 27 C/W Total Device Dissipation (Note 2) P D / C Thermal Resistance, JunctiontoAmbient (Note 2) R JA 85 C/W DUAL HEATED (Note 3) Total Device Dissipation (Note ) P D / C Thermal Resistance, JunctiontoAmbient (Note ) R JA 9 C/W Total Device Dissipation (Note 2) P D / C Thermal Resistance, JunctiontoAmbient (Note 2) R JA 6 C/W Junction and Storage Temperature Range T J, T stg 55 to +5 C. mm 2, oz. copper traces, still air. 2. mm 2, oz. copper traces, still air. 3. Dual heated values assume total power is the sum of two equally powered devices. 2
3 NSS3MDR2G ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I C = madc, I B = ) V (BR)CEO Vdc CollectorBase Breakdown Voltage (I C =. madc, I E = ) EmitterBase Breakdown Voltage (I E =. madc, I C = ) Collector Cutoff Current (V CB = Vdc, I E = ) Emitter Cutoff Current (V EB = 6. Vdc) ON CHARACTERISTICS DC Current Gain (Note ) (I C = ma, V CE = 2. V) (I C = 5 ma, V CE = 2. V) (I C =. A, V CE = 2. V) (I C = 2. A, V CE = 2. V) (I C = 2. A, V CE = 2. V) (Note 5) CollectorEmitter Saturation Voltage (Note ) (I C =. A, I B =. A) (I C =. A, I B =. A) (I C =. A, I B =. A) (I C = 2. A, I B =.2 A) BaseEmitter Saturation Voltage (Note ) (I C =. A, I B =. A) BaseEmitter Turnon Voltage (Note ) (I C =. A, V CE = 2. V) (I C =. A, V CE = 2. V) (Note 6) Cutoff Frequency (I C = ma, V CE = 5. V, f = MHz) V (BR)CBO V (BR)EBO 6. I CBO. I EBO. h FE h FE()/ h FE(2) V CE(sat) V BE(sat).78.9 V BE(on) V BE() V BE(2) f T Vdc Vdc Adc Adc V V V mv MHz Input Capacitance (V EB =.5 V, f =. MHz) Cibo 32 5 pf Output Capacitance (V CB = 3. V, f =. MHz) Cobo 5 pf SWITCHING CHARACTERISTICS Delay (V CC = 3 V, I C = 75 ma, I B = 5 ma) t d ns Rise (V CC = 3 V, I C = 75 ma, I B = 5 ma) t r ns Storage (V CC = 3 V, I C = 75 ma, I B = 5 ma) t s 78 ns Fall (V CC = 3 V, I C = 75 ma, I B = 5 ma) t f ns. Pulsed Condition: Pulse Width = 3 sec, Duty Cycle 2%. 5. h FE() /h FE(2) is the ratio of one transistor compared to the other transistor within the same package. The smaller h FE is used as numerator. 6. V BE() V BE(2) is the absolute difference of one transistor compared to the other transistor within the same package. 3
4 NSS3MDR2G TYPICAL CHARACTERISTICS V CE(sat), COLLECTOREMITTER SATURATION VOLTAGE (V) I C /I B = 5 C.. Figure. Collector Emitter Saturation Voltage vs. Collector Current 55 C V CE(sat), COLLECTOREMITTER SATURATION VOLTAGE (V) I C /I B =.. 5 C Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 55 C h FE, DC CURRENT GAIN C (2. V) (5. V) (2. V) 55 C (5. V) 55 C (2. V).. 5 C (5. V) Figure 3. DC Current Gain vs. Collector Current V BE(sat), BASEEMITTER SATURATION VOLTAGE (V)..9 I C /I B = C 5 C. Figure. Base Emitter Saturation Voltage vs. Collector Current V BE(on), BASEEMITTER TURNON VOLTAGE (V) V CE = +2. V. 55 C 5 C. Figure 5. Base Emitter TurnOn Voltage vs. Collector Current V CE(sat), COLLECTOREMITTER VOLTAGE (V) ma A 2 A 3 A.. I b, BASE CURRENT (A) Figure 6. Saturation Region.
5 NSS3MDR2G TYPICAL CHARACTERISTICS 8 C ibo, INPUT CAPACITANCE (pf) C ibo (pf) C obo, OUTPUT CAPACITANCE (pf) C obo (pf) V EB, EMITTERBASE VOLTAGE (V) V cb, COLLECTORBASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance s ms ms. ms I C (A).. Thermal Limit. Single Pulse Test at... V CE (V dc ) Figure 9. Safe Operating Area 5
6 NSS3MDR2G PACKAGE DIMENSIONS X B Y 8 A 5 S.25 (.) M Y M SOIC8 NB CASE 757 ISSUE AJ K NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.. MAXIMUM MOLD PROTRUSION.5 (.6) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.27 (.5) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION THRU 756 ARE OBSOLETE. NEW STANDARD IS 757. Z H G D C.25 (.) M Z Y S X S SEATING PLANE. (.) N X 5 M J MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G.27 BSC.5 BSC H J K M 8 8 N S SOLDERING FOOTPRINT*.52.6 STYLE 6: PIN. EMITTER, DIE # 2. BASE, DIE # 3. EMITTER, DIE #2. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE # 8. COLLECTOR, DIE # SCALE 6: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NSS3MD/D
NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω
NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications
More informationNSS40201LT1G NSV40201LT1G. 40 V, 2.0 A, Low V CE(sat) NPN Transistor. 40 VOLTS, 2.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS42LTG, NSV42LTG 4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage
More informationNSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G. 60 V, 6.0 A, Low V CE(sat) PNP Transistor
NSS66MZ, NSV66MZTG, NSV66MZT3G 6 V, 6. A, Low V CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage
More informationNSS12100M3T5G. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 350 m
NSSMTG, A, Low CE(sat) PNP Transistor ON Semiconductor's e PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and high current
More informationNSS60601MZ4. 60 V, 6.0 A, Low V CE(sat) NPN Transistor. 60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 50 m
NSS66MZ 6 V, 6. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and high
More informationSNSS35200MR6T1G. 35 V, 5 A, Low V CE(sat) PNP Transistor. 35 VOLTS 5.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 100 m
35 V, 5 A, Low V CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and
More informationNSS12200WT1G. 12 V, 2 A, Low V CE(sat) PNP Transistor. 12 VOLTS 2.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 163 m
NSS22WTG 2, 2 A, Low CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and
More informationNSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSJ, NSVJ V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) )
More informationNSS40301MZ4. Bipolar Power Transistors 40 V, 3.0 A, Low V CE(sat) NPN Transistor NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
NSS3MZ Bipolar Power Transistors V, 3. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage
More informationNSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSCL, NSVCL V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat)
More informationNSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low V CE(sat) NPN Transistor
NSSC2MZ4, NSVC2MZ4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage
More informationNSV1C301ET4G. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS 12.5 WATTS NPN LOW V CE(sat) TRANSISTOR
NSSC3ET4G, 3. A, Low CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low CE(sat) transistors are surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and high current
More informationNSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
More informationMMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon
MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
More informationMPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5
More informationEMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
More informationNPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors. MAXIMUM RATINGS
- MPS899; - MPS8599 Amplifier Transistors Voltage and Current are Negative for Transistors COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 8 CollectorBase
More informationMMBTA05L, MMBTA06L. Driver Transistors. NPN Silicon
Driver Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ0 Qualified and PPAP Capable These Devices are
More informationPZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
More informationMMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
More informationNJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
NJTN, NJVNTG, NJVNTG Bipolar Power Transistors NPN Silicon Features Epoxy Meets UL 9, V @.5 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ
More informationBC846, BC847, BC848. General Purpose Transistors. NPN Silicon
General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.
More informationMMBT2222L, MMBT2222AL, SMMBT2222AL. General Purpose Transistors. NPN Silicon
L, AL, SAL General Purpose Transistors NPN Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications
More informationBC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
More informationMMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.
More informationMUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
More information2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Amplifier Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol 2N5400 Unit Collector Emitter Voltage V CEO 1 1 Collector Base Voltage V CBO 1 160
More informationNSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
More informationBC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
More informationBC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage
More informationBC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
More informationMJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors
MJW3281A (NPN) MJW132A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW132A are PowerBase power transistors for high power audio, disk head positioners and other linear
More informationBC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
High Current Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 80 Vdc Collector Base Voltage V CBO 80 Vdc Collector
More informationMUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNT Series, SMUNT Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
More informationMPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45
More informationMJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS
MJE1502 (NPN), MJE150 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as highfrequency drivers in audio amplifiers. Features High DC Current Gain High Current Gain Bandwidth Product
More informationMUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
More information2N6515, 2N6517, 2N6520. High Voltage Transistors NPN and PNP
2N6515, 2N6517, 2N65 High Voltage Transistors NPN and PNP Features Voltage and Current are Negative for PNP Transistors PbFree Package is Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N6515 2N6517
More informationNSS40500UW3T2G. 40 V, 6.0 A, Low V CE(sat) PNP Transistor. 40 VOLTS 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 65 m
4, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current
More informationMPSA44. High Voltage Transistor. NPN Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION
Preferred Device High Voltage Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 400 Vdc CollectorBase Voltage V CBO 500 Vdc EmitterBase Voltage V EBO 6.0 Vdc
More informationMMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon
MMBT648LTG, MMBT649LTG, NSVMMBT649LTG Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and
More informationMMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4
More informationNSS20601CF8T1G 20 V, 8.0 A, Low V CE(sat) NPN Transistor
NSSF8TG V, 8. A, Low V E(sat) NPN Transistor ON Semiconductor's e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and
More informationMMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
More informationMMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
More informationUMC2NT1, UMC3NT1, UMC5NT1
UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor
More informationBC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications.
More informationMJE243 - NPN, MJE253 - PNP
Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter
More informationBD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
More informationBCP53 Series. PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS
PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT package which is designed for medium power surface
More informationNJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
Bipolar Power Transistors PNP Silicon Features Collector -Emitter Sustaining Voltage - V CEO(sus) =(Min)@I C =madc High DC Current Gain - h FE = (Min) @ I C =.Adc = (Min) @ I C =3.Adc Low Collector -Emitter
More informationMJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications
MJD9, NJVMJD9T4G (PNP) MJD3, NJVMJD3T4G (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed
More informationBC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon
BC856BWT1, SBC856BWT1, BC857BWT1, SBC857BWT1, BC858AWT1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2
More informationMUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
More informationBC846ALT1G Series. General Purpose Transistors. NPN Silicon Features
BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: >4 V ESD Rating Machine Model: >4 V S and NSV Prefix for Automotive and Other
More informationMPS650, MPS651, NPN MPS750, MPS751, PNP. Amplifier Transistors. Pb Free Packages are Available* Features. MAXIMUM RATINGS
MPS65, MPS65, MPS, MPS, MPS65 and MPS are Preferred Devices Amplifier Transistors Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol MPS65 MPS MPS65 MPS Unit Collector Emitter Voltage
More informationMJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationMJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationMPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc
More informationMJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
More informationNSTB1002DXV5T1G, NSTB1002DXV5T5G
NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
More informationBC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
More informationMJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD () MJD7 () Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
More informationMMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
More information12 VOLTS, 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 45 m. MAXIMUM RATINGS (T A = 25 C) MARKING DIAGRAM
NSS16F8T1G 1, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high
More informationNSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
More informationMPSA92, MPSA93. High Voltage Transistors. PNP Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION
MPSA9, MPSA9 is a Preferred Device High Voltage Transistors PNP Silicon MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA9 MPSA9 V CEO V CBO 00 00 00 00 EmitterBase
More informationMJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors
MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth
More informationMJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications.
More informationMJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors
MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP) High oltage Power Transistors for Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
More informationTIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors
TIP120, TIP121, TIP122 (); TIP125, TIP126, TIP127 () Preferred Devices Plastic MediumPower Complementary Silicon Transistors Designed for generalpurpose amplifier and lowspeed switching applications. Features
More information2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors
2N6487, 2N6488 (), 2N649, 2N6491 () Complementary Silicon Plastic Power Transistors These devices are designed for use in generalpurpose amplifier and switching applications. Features High DC Current Gain
More informationMJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD, MJDC (NPN), MJD, MJDC (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface
More informationBD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features High DC
More informationEMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors
EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
More informationMJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ295G - PNP MJ296G - NPN Silicon Power Transistors The MJ295G and MJ296G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear
More informationMJE15034 NPN, MJE15035 PNP
MJE153 NPN, MJE1535 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO22, NPN & PNP Devices Complementary silicon plastic power transistors are designed for use as highfrequency drivers
More informationMJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationMJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
More information2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS
Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter
More informationMMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon
MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
More informationAdc. W W/ C T J, T stg 65 to C
Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =
More informationMUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
More informationMUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
More informationNJVMJD128T4G. NJVMJD128T4G (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD8TG, NJVMJD8TG (PNP) Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Monolithic Construction
More informationNSS35200CF8T1G. 35 V, 7 A, Low V CE(sat) PNP Transistor. 35 VOLTS 7.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 78 m
NSSF8T1G V, 7 A, Low V E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and
More informationBC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features Pb Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Collector Base Voltage V CB 40 Collector
More information2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Complementary Silicon High Power Transistors
(NPN), MJ (NPN), MJ6 (PNP) MJ and MJ6 are Preferred Devices Complementary Silicon HighPower Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other
More information2N5194G, 2N5195G. Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON VOLTS
, Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features Complement to NPN 2N5191, 2N5192 These Devices are PbFree
More informationBC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon
BC87-6L, SBC87-6L, BC87-25L, SBC87-25L, BC87-4L, SBC87-4L General Purpose Transistors NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change
More informationNJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
NJW21193G (PNP) NJW2119G (NPN) Silicon Power Transistors The NJW21193G and NJW2119G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationMJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors
MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching motor control applications. Features Similar
More informationMJL4281A (NPN) MJL4302A (PNP)
MJL428A (NPN) MJL42A (PNP) Preferred Device Complementary NPNPNP Silicon Power Bipolar Transistors The MJL428A and MJL42A are PowerBase power transistors for high power audio. Features 3 V CollectorEmitter
More informationMPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter
More informationNSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
More information2N3055, MJ2955. Complementary Silicon Power Transistors 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W
N355, MJ955 Preferred Device Complementary Silicon Power Transistors...designed for generalpurpose switching and amplifier applications. DC Current Gain h FE = 7 @ I C = 4 Adc CollectorEmitter Saturation
More informationMJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
MJD, MJDC (NPN), MJD, MJDC (PNP) MJDC and MJDC are Preferred Devices Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications.
More informationBDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching
More information2N3771, 2N3772. High Power NPN Silicon Power Transistors. 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS
2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features Forward Biased
More informationMPSA13, MPSA14. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Vdc Collector
More information