NUD3124, SZNUD3124. Automotive Inductive Load Driver
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- Alexander Harmon
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1 Automotive Inductive Load Driver This microintegrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a freewheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. MARKING DIAGRAMS Features Provides Robust Interface between D.C. Relay Coils and Sensitive Logic Capable of Driving Relay Coils Rated up to 5 ma at 2 Volts Replaces 3 or 4 Discrete Components for Lower Cost Internal Zener Eliminates Need for FreeWheeling Diode Meets Load Dump and other Automotive Specs SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These are PbFree Devices SOT23 CASE 38 STYLE 2 JW6 M JW6 = Specific Device Code M = Date Code = PbFree Package (Note: Microdot may be in either location) SC74 CASE 38F STYLE 7 JW6 M Typical Applications Automotive and Industrial Environment Drives Window, Latch, Door, and Antenna Relays JW6 = Specific Device Code M = Date Code = PbFree Package (Note: Microdot may be in either location) Benefits Reduced PCB Space Standardized Driver for Wide Range of Relays Simplifies Circuit Design and PCB Layout Compliance with Automotive Specifications Device Package Shipping NUD324LTG SZNUD324LTG ORDERING INFORMATION SOT23 (PbFree) SOT23 (PbFree) 3 / Tape & Reel 3 / Tape & Reel NUD324DMTG SZNUD324DMTG SC74 (PbFree) SC74 (PbFree) 3 / Tape & Reel 3 / Tape & Reel Drain (3) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. INTERNAL CIRCUIT DIAGRAMS Drain (6) Drain (3) Gate () k Gate (2) k k Gate (5) K K K Source (2) CASE 38 Source () CASE 38F Source (4) Semiconductor Components Industries, LLC, 22 February, 22 Rev. 2 Publication Order Number: NUD324/D
2 MAXIMUM RATINGS (T J = 25 C unless otherwise specified) Symbol Rating Value Unit V DSS DraintoSource Voltage Continuous (T J = 25 C) 28 V V GSS I D GatetoSource Voltage Continuous (T J = 25 C) Drain Current Continuous (T J = 25 C) 2 V 5 ma E Z Single Pulse DraintoSource Avalanche Energy (For Relay s Coils/Inductive Loads of 8 or Higher) (T J Initial = 85 C) P PK Peak Power Dissipation, DraintoSource (Notes and 2) (T J Initial = 85 C) E LD Load Dump Suppressed Pulse, DraintoSource (Notes 3 and 4) (Suppressed Waveform: V s = 45 V, R SOURCE =.5, T = 2 ms) (For Relay s Coils/Inductive Loads of 8 or Higher) (T J Initial = 85 C) 25 mj 2 W 8 V E LD2 E LD3 Inductive Switching Transient, DraintoSource (Waveform: R SOURCE =, T = 2. ms) (For Relay s Coils/Inductive Loads of 8 or Higher) (T J Initial = 85 C) Inductive Switching Transient 2, DraintoSource (Waveform: R SOURCE = 4., T = 5 s) (For Relay s Coils/Inductive Loads of 8 or Higher) (T J Initial = 85 C) V 3 V RevBat Reverse Battery, Minutes (DraintoSource) (For Relay s Coils/Inductive Loads of 8 or more) DualVolt Dual Voltage Jump Start, Minutes (DraintoSource) 28 V ESD Human Body Model (HBM) According to EIA/JESD22/A4 Specification 4 V 2, V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Nonrepetitive current square pulse. ms duration. 2. For different square pulse durations, see Figure Nonrepetitive load dump suppressed pulse per Figure For relay s coils/inductive loads higher than 8, see Figure 4. 2
3 THERMAL CHARACTERISTICS Symbol Rating Value Unit T A Operating Ambient Temperature 4 to 25 C T J Maximum Junction Temperature 5 C T STG Storage Temperature Range 65 to 5 C P D Total Power Dissipation (Note 5) SOT23 Derating above 25 C P D Total Power Dissipation (Note 5) SC74 Derating above 25 C R JA Thermal Resistance Junction to Ambient (Note 5) SOT23 SC74 5. Mounted onto minimum pad board mw mw/ C mw mw/ C C/W 3
4 ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise specified) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Sustaining Voltage (I D = ma) V BRDSS V Drain to Source Leakage Current (V DS = 2 V, V GS = V) (V DS = 2 V, V GS = V, T J = 25 C) (V DS = 28 V, V GS = V) (V DS = 28 V, V GS = V, T J = 25 C) I DSS A Gate Body Leakage Current (V GS = 3. V, V DS = V) (V GS = 3. V, V DS = V, T J = 25 C) (V GS = 5. V, V DS = V) (V GS = 5. V, V DS = V, T J = 25 C) I GSS A ON CHARACTERISTICS Gate Threshold Voltage (V GS = V DS, I D =. ma) (V GS = V DS, I D =. ma, T J = 25 C) Drain to Source OnResistance (I D = 5 ma, V GS = 3. V) (I D = 5 ma, V GS = 3. V, T J = 25 C) (I D = 5 ma, V GS = 5. V) (I D = 5 ma, V GS = 5. V, T J = 25 C) Output Continuous Current (V DS =.25 V, V GS = 3. V) (V DS =.25 V, V GS = 3. V, T J = 25 C) Forward Transconductance (V DS = 2 V, I D = 5 ma) DYNAMIC CHARACTERISTICS Input Capacitance (V DS = 2 V, V GS = V, f = khz) Output Capacitance (V DS = 2 V, V GS = V, f = khz) Transfer Capacitance (V DS = 2 V, V GS = V, f = khz) V GS(th).3.3 R DS(on) I DS(on) V ma g FS 5 mmho Ciss 32 pf Coss 2 pf Crss 8. pf SWITCHING CHARACTERISTICS Propagation Delay Times: High to Low Propagation Delay; Figure, (V DS = 2 V, V GS = 3. V) Low to High Propagation Delay; Figure, (V DS = 2 V, V GS = 3. V) t PHL t PLH ns High to Low Propagation Delay; Figure, (V DS = 2 V, V GS = 5. V) Low to High Propagation Delay; Figure, (V DS = 2 V, V GS = 5. V) t PHL t PLH Transition Times: Fall Time; Figure, (V DS = 2 V, V GS = 3. V) Rise Time; Figure, (V DS = 2 V, V GS = 3. V) t f t r ns Fall Time; Figure, (V DS = 2 V, V GS = 5. V) Rise Time; Figure, (V DS = 2 V, V GS = 5. V) t f t r
5 TYPICAL PERFORMANCE CURVES (T J = 25 C unless otherwise noted) V IH V in 5% V t PHL t PLH 9% V OH V out 5% % V OL t f t r Figure. Switching Waveforms 25 P pk, PEAK SURGE POWER (W) P W, PULSE WIDTH (ms) Figure 2. Maximum Nonrepetitive Surge Power versus Pulse Width Load Dump Pulse Not Suppressed: V R = 3.5 V Nominal ±% V S = 6 V Nominal ±% T = 3 ms Nominal ±% T R = ms ±% Load Dump Pulse Suppressed: NOTE: Max. Voltage DUT is exposed to is NOTE: approximately 45 V. V S = 3 V ±2% T = 5 ms ±2% V R, I R T R 9% % of Peak; Reference = V R, I R % T VS Figure 3. Load Dump Waveform Definition 5
6 4 4 V S, LOAD DUMP (VOLTS) I DSS, DRAIN LEAKAGE ( A) V DS = 28 V RELAY S COIL ( ) T J, JUNCTION TEMPERATURE ( C) Figure 4. Load Dump Capability versus Relay s Coil dc Resistance Figure 5. DraintoSource Leakage versus Junction Temperature I GSS GATE LEAKAGE ( A) V GS = 5 V V GS = 3 V T J, JUNCTION TEMPERATURE ( C) Figure 6. GatetoSource Leakage versus Junction Temperature 5 BV DSS BREAKDOWN VOLTAGE (V) I D = ma T J, JUNCTION TEMPERATURE ( C) Figure 7. Breakdown Voltage versus Junction Temperature 25 I D DRAIN CURRENT (A). E4 E6 E8 V GS = 5 V V GS = 3 V V GS = 2.5 V V GS = 2 V V GS = V I D DRAIN CURRENT (A)... E4 E5 E6 V DS =.8 V 25 C 85 C 25 C 4 C E E V DS, DRAINTOSOURCE VOLTAGE (V) V GS, GATETOSOURCE VOLTAGE (V) Figure 8. Output Characteristics Figure 9. Transfer Function 6
7 R DS(ON), DRAINTOSOURCE RESISTANCE (m ) I D =.5 A V GS = 5. V 25 I D =.5 A V GS = 3. V 25 Figure. On Resistance Variation versus Junction Temperature 5 I D =.25 A V GS = 3. V 75 T J, JUNCTION TEMPERATURE ( C) 25 R DS(ON), DRAINTOSOURCE RESISTANCE ( ) I D = 25 A 25 C 85 C 25 C 4 C V GS, GATETOSOURCE VOLTAGE (V) Figure. On Resistance Variation versus GatetoSource Voltage 36. V Z ZENER CLAMP VOLTAGE (V) C 25 C 85 C 25 C I Z, ZENER CURRENT (ma) Figure 2. Zener Clamp Voltage versus Zener Current. D =.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SINGLE PULSE P d(pk) PW t t 2 PERIOD DUTY CYCLE = t /t 2....,,,, t, PULSE WIDTH (ms) Figure 3. Transient Thermal Response for NUD324LTG 7
8 APPLICATIONS INFORMATION 2 V Battery + NC NO Drain (3) Relay, Vibrator, or Inductive Load Micro Processor Signal for Relay Gate () K k NUD324 Source (2) Figure 4. Applications Diagram 8
9 PACKAGE DIMENSIONS SOT23 (TO236) CASE 388 ISSUE AP A E A D 3 2 e b HE SEE VIEW C L L VIEW C c.25 NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A b c D E e L L H E STYLE 2: PIN. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 9
10 PACKAGE DIMENSIONS SC74 CASE 38F5 ISSUE M H E 6 D E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL F, 2, 3, 4 OBSOLETE. NEW STANDARD 38F5..5 (.2) e A b A SOLDERING FOOTPRINT* L C MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A b c D E e L H E STYLE 7: PIN. SOURCE 2. GATE 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NUD324/D
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