NTLUF4189NZ Power MOSFET and Schottky Diode

Size: px

Start display at page:

Download "NTLUF4189NZ Power MOSFET and Schottky Diode"

Silvia Page
6 years ago
Views:

1 NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board Space Saving Low VF Schottky Diode ESD Protected Gate This is a Halide Free Device This is a Pb Free Device Applications DC-DC Boost Converter Color Display and Camera Flash Regulators Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others MAXIMUM RATINGS (T J = C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage V DSS V Gate-to-Source Voltage V GS ±8. V Continuous Drain Current (Note ) Power Dissipation (Note ) Continuous Drain Current (Note ) Steady State T A = C I D. A T A = 8 C. t s T A = C.9 Steady State T A = C P D.8 W t s T A = C. Steady State T A = C I D. A T A = 8 C.9 Power Dissipation (Note ) T A = C P D. W Pulsed Drain Current tp = s I DM 8. A MOSFET Operating Junction and Storage Temperature Schottky Operating Junction & Storage Temperature T J, T STG T J, T STG - to - to Source Current (Body Diode) (Note ) I S. A Lead Temperature for Soldering Purposes (/8 from case for s) Gate-to-Source ESD Rating (HBM) per JESD AF C C T L C ESD V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Surface Mounted on FR Board using in sq pad size (Cu area =.7 in sq [ oz] including traces).. Surface-mounted on FR board using the minimum recommended pad size of mm, oz. Cu. G V (BR)DSS V V R MAX V D S N Channel MOSFET A N/C D MOSFET R DS(on) MAX V V SCHOTTKY DIODE V F TYP. V UDFN CASE 7AT COOL AA = Specific Device Code M = Date Code = Pb Free Package V PIN CONNECTIONS A I D MAX. A I F MAX. A K Schottky Diode MARKING DIAGRAM AA M ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. K D (Top View) K G S. A. A Semiconductor Components Industries, LLC, 9 March, 9 Rev. Publication Order Number: NTLUF89NZ/D

2 NTLUF89NZ DEVICE ORDERING INFORMATION NTLUF89NZTAG NTLUF89NZTBG Device Package Shipping UDFN (Pb Free) UDFN (Pb Free) / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Schottky Diode Maximum Ratings (T J = C unless otherwise stated) Parameter Symbol Value Units Peak Repetitive Reverse Voltage V RRM V DC Blocking Voltage V R V Average Rectified Forward Current I F. A Thermal Resistance Ratings Parameter Symbol Max Units Junction-to-Ambient Steady State (Note ) R θja C/W Junction-to-Ambient t s (Note ) R θja Junction-to-Ambient Steady State min Pad (Note ) R θja MOSFET Electrical Characteristics (T J = C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain to Source Breakdown Voltage V (BR)DSS V GS = V, I D = μa V Drain to Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current I DSS VGS = V, V DS = V V (BR)DSS /T J I D = μa, ref to C mv/ C T J = C. A T J = 8 C Gate-to-Source Leakage Current I GSS V DS = V, V GS = ± 8. V A ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V GS = V DS, I D = A... V Negative Threshold Temp. Coefficient V GS(TH) /T J. mv/ C Drain to Source On Resistance R DS(on) V GS =. V, I D =. A m V GS =. V, I D =. A 8 V GS =. V, I D =. A Forward Transconductance g FS V DS =. V, I D =. A. S Input Capacitance C ISS CHARGES & CAPACITANCES 9 pf Output Capacitance C OSS V GS = V, f = MHz, V DS = V Reverse Transfer Capacitance C RSS Total Gate Charge Q G(TOT) Threshold Gate Charge Q G(TH) V GS =. V, V DS = V;. Gate-to-Source Charge Q GS I D =. A. Gate-to-Drain Charge Q GD.. Surface-mounted on FR board using in sq pad size (Cu area =.7 in sq [ oz] including traces). Surface-mounted on FR board using the minimum recommended pad size of mm, oz. Cu.. Pulse Test: pulse width s, duty cycle %. Switching characteristics are independent of operating junction temperatures.. nc

3 NTLUF89NZ MOSFET Electrical Characteristics (T J = C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units SWITCHING CHARACTERISTICS, VGS =. V (Note ) Turn-On Delay Time t d(on) 7. ns Rise Time t r V GS =. V, V DD = V,. Turn-Off Delay Time t d(off) I D = A, R G =. Fall Time t f. DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD VGS = V, I S = A Reverse Recovery Time t RR T J = C.8. V T J = 8 C.7 Charge Time t a V GS = V, di SD /dt = A/ s, 8.9 Discharge Time t b I S = A.. ns Reverse Recovery Charge Q RR. nc SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Forward V F I F = ma.7.7 V Voltage I F = ma.. Reverse Current I F = ma.. I R V R = V. A V R = V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 8 C unless otherwise specified) V F I F = ma. V Forward Voltage I F = ma. Reverse Current I F = ma. I R V R = V 8 A V R = V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = C unless otherwise specified) V F I F = ma. V Forward Voltage I F = ma.7 Reverse Current I F = ma. I R V R = V A V R = V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = C unless otherwise specified) Capacitance C V R = V, f =. MHz. pf. Surface-mounted on FR board using in sq pad size (Cu area =.7 in sq [ oz] including traces). Surface-mounted on FR board using the minimum recommended pad size of mm, oz. Cu.. Pulse Test: pulse width s, duty cycle %. Switching characteristics are independent of operating junction temperatures

4 NTLUF89NZ TYPICAL MOSFET CHARACTERISTICS T J = C V GS =. V V DS = V I D, DRAIN CURRENT (A) 8. V. V. V. V. V I D, DRAIN CURRENT (A). T J = C T J = C T J = C... V DS, DRAIN TO SOURCE VOLTAGE (V) V GS, GATE TO SOURCE VOLTAGE (V) Figure. On Region Characteristics Figure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( ). T J = C. I D =. A. I D =. A V GS, GATE TO SOURCE VOLTAGE (V). R DS(on), DRAIN TO SOURCE RESISTANCE ( ) V. V. V. V I D, DRAIN CURRENT (A) V GS =. V 7. V T J = C 8 9 Figure. On Resistance vs. Gate Voltage Figure. On Resistance vs. Drain Current and Gate Voltage R DS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED) V GS =. V I D =. A 7 T J, JUNCTION TEMPERATURE ( C) Figure. On Resistance Variation with Temperature I DSS, LEAKAGE (na) V GS = V T J = C T J = C T J = 8 C V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. Drain to Source Leakage Current vs. Voltage

5 NTLUF89NZ TYPICAL MOSFET CHARACTERISTICS C, CAPACITANCE (pf) 7 C rss C iss C oss V GS = V T J = C f = MHz V GS, GATE TO SOURCE VOLTAGE (V) Q GS. V DS. Q GD Q T.7 V GS V GS = V I D =. A T J = C.. V DS, DRAIN TO SOURCE VOLTAGE (V) V DS, DRAIN TO SOURCE VOLTAGE (V) Q g, TOTAL GATE CHARGE (nc) Figure 7. Capacitance Variation Figure 8. Gate to Source and Drain to Source Voltage vs. Total Charge t, TIME (ns) V GS =. V V DD = V I D =. A t f t d(off) t d(on) t r I S, SOURCE CURRENT (A). T J = C T J = C T J = C. R G, GATE RESISTANCE ( ) Figure 9. Resistive Switching Time Variation vs. Gate Resistance.. T J = C V SD, SOURCE TO DRAIN VOLTAGE (V) Figure. Diode Forward Voltage vs. Current V GS, GATE TO SOURCE VOLTAGE (V) T J, TEMPERATURE ( C) Figure. Threshold Voltage I D = A POWER (W) 7 7 SINGLE PULSE TIME (s) Figure. Single Pulse Maximum Power Dissipation

6 NTLUF89NZ TYPICAL MOSFET CHARACTERISTICS I D, DRAIN CURRENT (AMPS). V GS = 8 V SINGLE PULSE T C = C s s ms ms R DS(on) LIMIT THERMAL LIMIT dc PACKAGE LIMIT.. V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) Figure. Maximum Rated Forward Biased Safe Operating Area 7 R(t) ( C/W) Single Pulse..... PULSE TIME (sec) Figure. FET Thermal Response

7 NTLUF89NZ TYPICAL SCHOTTKY CHARACTERISTICS C, TOTAL CAPACITANCE (pf) 8 8 T A = C V R, REVERSE VOLTAGE (V) Figure. Total Capacitance I F, INSTANTANEOUS FORWARD CURRENT (ma). T J = C T J = 8 C T J = C T J = C 7 V F, INSTANTANEOUS FORWARD VOLTAGE (mv) I R, REVERSE CURRENT ( A) T J = C T J = 8 C T J = C. 8 V R, REVERSE VOLTAGE (V) Figure. Typical Forward Voltage Figure 7. Typical Reverse Current 7

8 NTLUF89NZ PACKAGE DIMENSIONS UDFN.x.,.P CASE 7AT ISSUE O X X. C PIN ONE REFERENCE X. C. C D ÉÉ DETAIL B. C TOP VIEW SIDE VIEW A A B E (A) A C SEATING PLANE L EXPOSED Cu A L DETAIL A OPTIONAL CONSTRUCTION ÈÈÈ DETAIL B OPTIONAL CONSTRUCTION MOLD CMPD A NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS.. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN. AND. mm FROM TERMINAL.. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN MAX A.. A.. A. REF b.. D. BSC E. BSC e. BSC D.. D.8.8 E..7 K. L.. L. DETAIL A X L e D X K BOTTOM VIEW X D E X b. C A B. C NOTE X.8 SOLDERMASK DEFINED MOUNTING FOOTPRINT*. X PITCH X. DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box, Denver, Colorado 87 USA Phone: 7 7 or 8 8 Toll Free USA/Canada Fax: 7 7 or 8 87 Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTLUF89NZ/D

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving