TMOS E FET. Power Field Effect Transistor MTP8N50E. N Channel Enhancement Mode Silicon Gate
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1 TMOS E FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate MTP8N5E This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode G Diode is Characterized for Use in Bridge Circuits I DSS and V DS(on) Specified at Elevated Temperature D S TMOS POWER FET 8. AMPERES 5 VOLTS R DS(on) =.8 OHM CASE 221A 9, Style 5 TO-22AB MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit Drain to Source Voltage V DSS 5 Vdc Drain to Gate Voltage (R GS = 1. M ) V DGR 5 Vdc Gate to Source Voltage Continuous Gate to Source Voltage Non repetitive (tp 1 ms) V GS ±2 V GSM ±4 Vdc Vpk Drain Current T C = 25 C Drain Current T C = 1 C Drain Current Single Pulse (tp 1 s) Total Power T C = 25 C Derate above 25 C I D I D I DM P D Adc Apk Watts W/ C Operating and Storage Temperature Range T J, T stg 55 to 15 C Single Pulse Drain to Source Avalanche Energy STARTING (V DD = 25 Vdc, V GS = 1 Vdc, PEAK I L = 8. Apk, L = 16 mh, R G = 25 ) E AS 51 mj Thermal Resistance Junction to Case Junction to Ambient R JC 1. R JA 62.5 C/W Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 5 sec. T L 26 C Semiconductor Components Industries, LLC, 24 August, 24 Rev. XXX 1 Publication Order Number: MTP8N5E/D
2 MTP8N5E ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage (V GS = Vdc, I D = 25 µadc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V DS = 5 Vdc, V GS = Vdc) (V DS = 4 Vdc, V GS = Vdc, T J = 125 C) Gate Body Leakage Current (V GS = ±2 Vdc, V DS = Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (V DS = V GS, I D = 25 µadc) Threshold Temperature Coefficient (Negative) Static Drain to Source On Resistance (V GS = 1 Vdc, I D = 4. Adc) Drain to Source On Voltage (V GS = 1 Vdc) (I D = 8. Adc) (I D = 4. Adc, T J = 125 C) Forward Transconductance (V DS = 15 Vdc, I D = 4. Adc) V (BR)DSS 5 I DSS I GSS 1 V GS(th) R DS(on).6.8 V DS(on) g FS 4. DYNAMIC CHARACTERISTICS Input Capacitance C iss pf Output Capacitance (V DS = 25 Vdc, V GS = Vdc, f = 1. MHz) C oss Transfer Capacitance C rss SWITCHING CHARACTERISTICS (2) Turn On Delay Time t d(on) 15 5 ns Rise Time Turn Off Delay Time (R go + C17n = 9.1 ) t r t d(off) 4 15 Fall Time t f 32 6 Gate Charge (see Figure 8) Vdc mv/ C Adc nadc Vdc mv/ C Ohms Vdc mhos Q T 4 64 nc (V DS = 4 Vdc, I D = 8. Adc, Q 1 8. V GS = 1 Vdc) Q 2 17 Q SOURCE DRAIN DIODE CHARACTERISTICS Forward On Voltage V SD Vdc (I S = 8. Adc, V GS = Vdc) (I S = 8. 8Adc, V GS = Vdc, T J = 125 C) 1.1 Reverse Recovery Time t rr 32 ns (I S = 8. Adc, V GS = Vdc, t a 179 di S /dt = 1 A/ s) t b 141 Reverse Recovery Stored Charge Q RR 3. C INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead.25 from package to center of die) L D 4.5 nh Internal Source Inductance (Measured from the source lead.25 from package to source bond pad) L S 7.5 (1) Pulse Test: Pulse Width 3 s, Duty Cycle 2.%. (2) Switching characteristics are independent of operating junction temperature. 2
3 MTP8N5E TYPICAL ELECTRICAL CHARACTERISTICS ID, DRAIN CURRENT (AMPS) V V GS = 1 V 7 V 6 V 5 V ID, DRAIN CURRENT (AMPS) V DS 1 V 1 C 25 C T J = 55 C V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) V GS, GATE TO SOURCE VOLTAGE (VOLTS) Figure 1. On Region Characteristics Figure 2. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE (OHMS) RDS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED) V GS = 1 V I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) Figure 3. On Resistance versus Drain Current and Temperature V GS = 1 V I D = 8 A 25 T J = 1 C T J, JUNCTION TEMPERATURE ( C) 25 C 55 C I DSS, LEAKAGE (na) R DS(on), DRAIN TO SOURCE RESISTANCE (OHMS) , 1, 1, 1 1 V GS = 1 V 15 V Figure 4. On Resistance versus Drain Current and Gate Voltage V GS = V T J = 125 C 1 C 25 C V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 5. On Resistance Variation with Temperature Figure 6. Drain to Source Leakage Current versus Voltage 3
4 MTP8N5E TYPICAL ELECTRICAL CHARACTERISTICS 4 V DS = V V GS = V 1, V GS = V C, CAPACITANCE (pf) C iss C rss C oss C iss C, CAPACITANCE (pf) 1, 1 C iss C oss C rss 1 5. C rss 5. V GS V DS DRAIN TO SOURCE VOLTAGE (VOLTS) GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. High Voltage Capacitance Variation, GATE TO SOURCE VOLTAGE (VOLTS) GS V Q1 Q3 8. Q2 16 QT Q g, TOTAL GATE CHARGE (nc) Figure 9. Gate to Source and Drain to Source Voltage versus Total Charge 24 V GS V DS I D = 8 A V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) t, TIME (ns) 1 1 I D = 8 A V DD = 25 V V GS = 1 V t d(off) t r t f 1 t d(on) R G, GATE RESISTANCE (OHMS) Figure 1. Resistive Switching Time Variation versus Gate Resistance IS, SOURCE CURRENT (AMPS) V GS = V I D, DRAIN CURRENT (AMPS) V GS = 2 V SINGLE PULSE T C = 25 C R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 s 1 s 1 ms 1 ms dc V SD, SOURCE TO DRAIN VOLTAGE (VOLTS) V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 11. Diode Forward Voltage versus Current Figure 12. Maximum Rated Forward Biased Safe Operating Area 4
5 MTP8N5E, SINGLE PULSE DRAIN TO SOURCE AS AVALANCHE ENERGY (mj) I D = 8 A E T J, STARTING JUNCTION TEMPERATURE ( C) 15 Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1..1 D = SINGLE PULSE t, TIME (seconds) Figure 14. Thermal Response 5
6 MTP8N5E PACKAGE DIMENSIONS CASE 221A 9 ISSUE AA H Q Z L V G B N D A K F T U S R J C T SEATING PLANE STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z
7 MTP8N5E Notes 7
8 MTP8N5E E FET and TMOS are trademarks of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+1) (Mon Fri 2:3pm to 7:pm CET) ONlit german@hibbertco.com French Phone: (+1) (Mon Fri 2:pm to 7:pm CET) ONlit french@hibbertco.com English Phone: (+1) (Mon Fri 12:pm to 5:pm GMT) ONlit@hibbertco.com EUROPEAN TOLL FREE ACCESS*: *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: (Mon Fri 8:am to 5:pm MST) ONlit spanish@hibbertco.com Toll Free from Mexico: Dial for Access then Dial ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: (Tue Fri 9:am to 1:pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: ONlit asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 MTP8N5E/D
N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
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P D P D mw mw/ C Watts mw/ C T J, T stg 55 to +150 C (1) 200 C/W. Characteristic Symbol Min Typ Max Unit.
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BC546, B BC547, A, B, C BC548, A, B, C
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MTW32N20EG. Power MOSFET 32 Amps, 200 Volts. N Channel TO AMPERES, 200 VOLTS R DS(on) = 75 m
MTW3NE Power MOSFET 3 Amps, Volts NChannel TO47 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
NTGS3443T1. Power MOSFET 2 Amps, 20 Volts. P Channel TSOP 6. 2 AMPERES 20 VOLTS R DS(on) = 65 m
NTGST Power MOSFET, Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package PbFree Package is Available Applications Power Management
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
Designer s Data Sheet TMOS E FET. High Energy Power FET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2NEZL/D Designer s Data Sheet TMOS E FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed
MTY30N50E. Power MOSFET 30 Amps, 500 Volts N Channel TO AMPERES 500 VOLTS R DS(on) = 150 mω
Preferred Device Power MOSFET 3 Amps, 5 Volts NChannel TO64 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
NTB5605P, NTBV5605. Power MOSFET -60 V, A. P Channel, D 2 PAK
NTB6P, NTBV6 Power OSFET -6 V, -8. A P Channel, D PAK Features Designed for Low R DS(on) Withstands High Energy in Avalanche and Commutation odes AEC Q Qualified NTBV6 These Devices are Pb Free and are
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
Extended V GSS range ( 25V) for battery applications
Dual Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
MTP23P06V. P Channel TO AMPERES, 60 VOLTS R DS(on) = 120 m
MTPP6V Preferred Device Power MOSFET Amps, 6 Volts PChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Symbol MJE18204 MJF18204 Unit
The MJE/MJF18204 have an application specific state of the art die dedicated to the electronic ballast ( light ballast ) and power supply applications. Improved Global Efficiency Due to Low Base Drive
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL
NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
MTP36N06V. Power MOSFET 32 Amps, 60 Volts N Channel TO AMPERES 60 VOLTS R DS(on) = 40 mω
MTP36N6V Preferred Device Power MOSFET 3 Amps, 6 Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
MTP1N60E. Power MOSFET 1 Amp, 600 Volts N Channel TO AMPERE 600 VOLTS R DS(on) = 8 Ω
MTPN6E Preferred Device Power MOSFET Amp, 6 Volts NChannel TO This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
500 mw SOD 123 Surface Mount
500 mw SOD 123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 123 package. These devices provide a convenient alternative to the leadless 34
MMBFJ309. N Channel MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
N Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate Source Voltage V GS 25 Vdc Gate Current I G 10 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total
MTW8N60E. Power MOSFET 8 Amps, 600 Volts N Channel TO AMPERES 600 VOLTS R DS(on) = 550 mω
MTWNE Preferred Device Power MOSFET Amps, Volts NChannel TO7 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over
NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89
NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD
MTP50N06V. Power MOSFET 42 Amps, 60 Volts N Channel TO AMPERES 60 VOLTS R DS(on) = 28 mω
Preferred Device Power MOSFET Amps, 6 Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications
Designer s Data Sheet Insulated Gate Bipolar Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW2N2/D Designer s Data Sheet Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor
MMDFS2P102. Power MOSFET 2 Amps, 20 Volts. P Channel SO 8, FETKY. 2 AMPERES 20 VOLTS R DS(on) = 160 m V F = 0.39 Volts
MMDFS2P12 Power MOSFET 2 Amps, 2 Volts PChannel SO8, FETKY The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky
MTP7N20E. Power MOSFET 7 Amps, 200 Volts N Channel TO AMPERES 200 VOLTS R DS(on) = 700 mω
MTP7NE Preferred Device Power MOSFET 7 Amps, Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource
NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features
NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
MTP20N06V. Power MOSFET 20 Amps, 60 Volts N Channel TO AMPERES 60 VOLTS R DS(on) = 80 mω
MTPN6V Preferred Device Power MOSFET Amps, 6 Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
MTP10N10ELG. Power MOSFET 10 A, 100 V, Logic Level, N Channel TO A, 100 V R DS(on) = 0.22
MTPNEL Preferred Device Power MOSFET A, V, Logic Level, NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers
MBRB20200CT. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES 200 VOLTS
Preferred Device Dual Schottky Rectifier... using Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency switching power supplies
P-Channel PowerTrench MOSFET
FDD4685-F085 P-Channel PowerTrench MOSFET -40 V, -32 A, 35 mω Features Typical R DS(on) = 23 m at V GS = -10V, I D = -8.4 A Typical R DS(on) = 30 m at V GS = -4.5V, I D = -7 A Typical Q g(tot) = 19 nc
Features D G. T A =25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1a) 3.8. (Note 1b) 1.6
FDD564P 6V P-Channel PowerTrench MOSFET FDD564P General Description This 6V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
MTP6P20E. Power MOSFET 6 Amps, 200 Volts P Channel TO AMPERES 200 VOLTS R DS(on) = 1 Ω
MTPPE Preferred Device Power MOSFET Amps, Volts PChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource
PUBLICATION ORDERING INFORMATION. Semiconductor Components Industries, LLC
FDS39 FDS39 V N-Channel Dual PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
FDD V P-Channel POWERTRENCH MOSFET
3 V P-Channel POWERTRENCH MOSFET General Description This P Channel MOSFET is a rugged gate version of ON Semiconductor s advanced POWERTRENCH process. It has been optimized for power management applications
MTP3055V. Power MOSFET 12 Amps, 60 Volts N Channel TO AMPERES 50 VOLTS R DS(on) = 150 mω
MTP355V Preferred Device Power MOSFET Amps, 6 Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
Features. TA=25 o C unless otherwise noted
NDS6 NDS6 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
Reverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning
MMDFS6N303. Power MOSFET 6 Amps, 30 Volts. N Channel SO 8, FETKY. 6 AMPERES 30 VOLTS R DS(on) = 35 m V F = 0.42 Volts
Power MOSFET 6 Amps, 3 Volts NChannel SO8, FETKY The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier
MARKING DIAGRAMS MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 1.) ORDERING INFORMATION PDIP 14 P SUFFIX CASE 646
The MC14106B hex Schmitt Trigger is constructed with MOS P channel and N channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or
N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted
BSS BSS N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high
I E I EM 24 P D
NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high voltage, high speed power switching inductive circuits where fall time is critical. It is particularly
P-Channel PowerTrench MOSFET -40V, -14A, 64mΩ
FDD4243-F85 P-Channel PowerTrench MOSFET -V, -4A, 64mΩ Features Typ r DS(on) = 36m at V GS = -V, I D = -6.7A Typ r DS(on) = 48m at V GS = -4.5V, I D = -5.5A Typ Q g(tot) = 2nC at V GS = -V High performance