NTMFS5H409NL. Power MOSFET. 40 V, 1.1 m, 270 A, Single N Channel

Transcription

1 Power MOSFET 4 V,. m, 7 A, Single N Channel Features Small Footprint (5x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These evices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise noted) Parameter Symbol Value Unit rain to Source Voltage V SS 4 V Gate to Source Voltage V GS ± V Continuous rain Current R JC (Notes, 3) Power issipation R JC (Note ) Continuous rain Current R JA (Notes,, 3) Power issipation R JA (Notes & ) Steady State Steady State T C = 5 C I 7 A T C = C 7 T C = 5 C P 4 W T C = C 56 T A = 5 C I 4 A T A = C 6 T A = 5 C P 3. W T A = C.3 Pulsed rain Current T A = 5 C, t p = s I M 9 A Operating Junction and Storage Temperature T J, T stg 55 to +5 Source Current (Body iode) I S 6 A Single Pulse rain to Source Avalanche Energy (I L(pk) = 45 A) Lead Temperature for Soldering Purposes (/8 from case for s) C E AS 34 mj T L 6 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction to Case Steady State R JC.9 C/W Junction to Ambient Steady State (Note ) R JA 39. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.. Surface mounted on FR4 board using a 65 mm, oz. Cu pad. 3. Maximum current for pulses as long as second is higher but is dependent on pulse duration and duty cycle. V (BR)SS R S(ON) MAX I MAX 4 V G (4) FN5 (SO 8FL) CASE 488AA STYLE. V V (5) S (,,3) N CHANNEL MOSFET S S S G MARKING IAGRAM 5H49L AYWZZ 7 A 5H49L = Specific evice Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORERING INFORMATION See detailed ordering, marking and shipping information section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 6 March, 6 Rev. Publication Order Number: NTMFS5H49NL/

2 ELECTRICAL CHARACTERISTICS ( unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS rain to Source Breakdown Voltage V (BR)SS V GS = V, I = 5 A 4 V rain to Source Breakdown Voltage Temperature Coefficient V (BR)SS / T J 9. mv/ C Zero Gate Voltage rain Current I SS V GS = V, T J = 5 C. V S = 4 V 5 A Gate to Source Leakage Current I GSS V S = V, V GS = V na ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V GS(TH) V GS = V S, I = 5 A.. V Threshold Temperature Coefficient V GS(TH) /T J 4.8 mv/ C rain to Source On Resistance R S(on) V GS = V I = 5 A.85. V GS = 4.5 V I = 5 A..6 m Forward Transconductance g FS V S = 5 V, I = 5 A 3 S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C ISS 57 Output Capacitance C OSS V GS = V, f = MHz, V S = V 4 pf Reverse Transfer Capacitance C RSS 73 Total Gate Charge Q G(TOT) V GS = 4.5 V, V S = V; I = 5 A 4 Total Gate Charge Q G(TOT) V GS = V, V S = V; I = 5 A 89 Threshold Gate Charge Q G(TH) 8.6 nc Gate to Source Charge Q GS 5 Gate to rain Charge Q G V GS = 4.5 V, V S = V; I = 5 A Plateau Voltage V GP.8 V Output Charge Q OSS V GS = V, V S = V 6 nc SWITCHING CHARACTERISTICS (Note 5) Turn On elay Time t d(on) 7 Rise Time t r V GS = 4.5 V, V S = V, 3 Turn Off elay Time t d(off) I = 5 A, R G =.5 4 ns Fall Time t f 4 RAIN SOURCE IOE CHARACTERISTICS Forward iode Voltage V S VGS = V, I S = 5 A Reverse Recovery Time t RR Charge Time t a V GS = V, di S /dt = A/ s, 3 ischarge Time t b I S = 5 A 8 Reverse Recovery Charge Q RR 8 nc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 3 s, duty cycle %. 5. Switching characteristics are independent of operating junction temperatures. 59 V ns

3 TYPICAL CHARACTERISTICS I, RAIN CURRENT (A) 3 V to 4.5 V 3.4 V V 3. V 3. V 5.8 V 5.6 V.4 V V S, RAIN TO SOURCE VOLTAGE (V) Figure. On Region Characteristics I, RAIN CURRENT (A) 3 75 V S = V T J = 55 C V GS, GATE TO SOURCE VOLTAGE (V) Figure. Transfer Characteristics R S(on), RAIN TO SOURCE RESISTANCE (m ) R S(on), NORMALIZE RAIN TO SOURCE RESISTANCE V GS, GATE VOLTAGE (V) Figure 3. On Resistance vs. Gate to Source Voltage V GS = V I = 5 A T J, JUNCTION TEMPERATURE ( C) I = 5 A Figure 5. On Resistance Variation with Temperature R S(on), RAIN TO SOURCE RESISTANCE (m ) I SS, LEAKAGE (na) e+6.e+5.e+4.e+3.e+ V GS = 4.5 V V GS = V I, RAIN CURRENT (A) Figure 4. On Resistance vs. rain Current and Gate Voltage T J = 5 C T J = 85 C.E V S, RAIN TO SOURCE VOLTAGE (V) Figure 6. rain to Source Leakage Current vs. Voltage 3

4 TYPICAL CHARACTERISTICS C, CAPACITANCE (pf).e+4.e+3.e+ C OSS C RSS V GS = V f = MHz.E V S, RAIN TO SOURCE VOLTAGE (V) Figure 7. Capacitance Variation C ISS V GS, GATE TO SOURCE VOLTAGE (V) V S = V I = 5 A Q GS Q G Q G, TOTAL GATE CHARGE (nc) Figure 8. Gate to Source vs. Total Charge V GS = V t, TIME (ns) t f t r T J = 5 C t d(off) R G, GATE RESISTANCE ( ) t d(on) V GS = 4.5 V V = V I = 5 A Figure 9. Resistive Switching Time Variation vs. Gate Resistance I S, SOURCE CURRENT (A) T J = 55 C V S, SOURCE TO RAIN VOLTAGE (V) Figure. iode Forward Voltage vs. Current ms 5 s I S (A) ms I PEAK (A) T J(initial) = C T J(initial) = 5 C. R S(on) Limit Thermal Limit Package Limit V S (V) Figure. Safe Operating Area E 6 E 3 E 3 TIME IN AVALANCHE (s) Figure. I PEAK vs. Time in Avalanche 4

5 EVICE ORERING INFORMATION evice Marking Package Shipping NTMFS5H49NLTG 5H49L FN5 (Pb Free) 5 / Tape & Reel NTMFS5H49NLT3G 5H49L FN5 (Pb Free) 5 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BR8/. 5

6 PACKAGE IMENSIONS. C. C 8X b. C A B.5 c L X. C A B X E E 3 4 TOP VIEW A SIE VIEW ETAIL A e/ e 4 K FN5 5x6,.7P (SO 8FL) CASE 488AA ISSUE M. C c ETAIL A 4 X A C SEATING PLANE RECOMMENE SOLERING FOOTPRINT* X X.53 NOTES:. IMENSIONING AN TOLERANCING PER ASME Y4.5M, CONTROLLING IMENSION: MILLIMETER. 3. IMENSION AN E O NOT INCLUE MOL FLASH PROTRUSIONS OR GATE BURRS. MILLIMETERS IM MIN NOM A.9. A. b.33.4 c E 6.5 E E e.7 BSC G K..35 L L.5 REF M MAX STYLE : PIN. SOURCE. SOURCE 3. SOURCE 4. GATE 5. RAIN PIN 5 (EXPOSE PA) G E BOTTOM VIEW L M X X. 4X PITCH IMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON Semiconductor 95 E. 3nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTMFS5H49NL/