MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G. Silicon Hot-Carrier Diodes. Schottky Barrier Diodes
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- Britton McKenzie
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1 , MMB0LTG, MMB0LTG, Silicon Hot-Carrier iodes Schottky Barrier iodes These devices are designed primarily for high efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low cost, high volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 0 VOLTS SILICON HOT CARRIER ETECTOR AN SWITCHING IOES Features Extremely Low Minority Carrier Lifetime 5 ps (Typ) Very Low Capacitance.5 pf V R = 5 V Low Reverse Leakage I R = nadc (Typ) MB0, MMB0 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q0 Qualified and PPAP Capable These evices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 CATHOE 2 Lead CASE 82 STYLE ANOE (TO 26) CASE 8 STYLE 8 CATHOE ANOE MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage V R 0 V Forward Current (C) I F 200 (Max) ma Total evice T A = 25 C MMB0LTG, MMB0LTG, erate above 25 C MMB0LTG, MMB0LTG, Operating Junction Temperature Range P F T J to +25 Storage Temperature Range T stg 55 to +50 MW mw/ C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. C C MB 0 AYWW MARKING IAGRAMS *ate Code orientation and/or overbar may vary depending upon manufacturing location. ORERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 4T M A = Assembly Location Y = Year WW = Work Week 4T = evice Code () M = ate Code* = Pb Free Package (Note: Microdot may be in either location) Semiconductor Components Industries, LLC, 20 May, 20 Rev. 7 Publication Order Number: MB0/
2 , MMB0LTG, MMB0LTG, ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (I R = 0 A) Total Capacitance (V R = 5 V, f =.0 MHz) Figure Reverse Leakage (V R = 25 V) Figure Forward Voltage (I F =.0 madc) Figure 4 Forward Voltage (I F = 0 madc) Figure 4 (BR)R 0 C T I R 200 V F V F V pf nadc Vdc Vdc ORERING INFORMATION evice Package Shipping 5,000 Units / Bulk MMB0LTG MMB0LTG,000 / Tape & Reel 0,000 / Tape & Reel 0,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BR80/. 2
3 , MMB0LTG, MMB0LTG, TYPICAL ELECTRICAL CHARACTERISTICS C T, TOTAL CAPACITANCE (pf) f =.0 MHz, MINORITY CARRIER LIFETIME (ps) KRAKAUER METHO V R, REVERSE VOLTAGE (VOLTS) I F, FORWAR CURRENT (ma) Figure. Total Capacitance Figure 2. Minority Carrier Lifetime 0 00, REVERSE LEAKAGE ( A) I R T A = 00 C 75 C 25 C I F, FORWAR CURRENT (ma) 0.0 T A = 85 C T A = -40 C T A = 25 C V R, REVERSE VOLTAGE (VOLTS) Figure. Reverse Leakage V F, FORWAR VOLTAGE (VOLTS) Figure 4. Forward Voltage I F(PEAK) CAPACITIVE CONUCTION I R(PEAK) FORWAR CONUCTION STORAGE CONUCTION SINUSOIAL GENERATOR BALLAST NETWORK (PAS) UT PAS SAMPLING OSCILLOSCOPE (50 INPUT) Figure 5. Krakauer Method of Measuring Lifetime
4 , MMB0LTG, MMB0LTG, PACKAGE IMENSIONS (TO 226AC) CASE ISSUE L SEATING PLANE P R X X H 2 G A V N L K B C J SECTION X X NOTES:. IMENSIONING AN TOLERANCING PER ANSI Y4.5M, CONTROLLING IMENSION: INCH.. CONTOUR OF PACKAGE BEYON ZONE R IS UNCONTROLLE. 4. LEA IMENSION IS UNCONTROLLE IN P AN BEYON IMENSION K MINIMUM. INCHES MILLIMETERS IM MIN MAX MIN MAX A B C G BSC.27 BSC H 0.00 BSC 2.54 BSC J K L N P R V STYLE : PIN. ANOE 2. CATHOE N 4
5 , MMB0LTG, MMB0LTG, PACKAGE IMENSIONS (TO 26) CASE 8 08 ISSUE AP A E A 2 e b HE SEE VIEW C L L VIEW C c 0.25 NOTES:. IMENSIONING AN TOLERANCING PER ANSI Y4.5M, CONTROLLING IMENSION: INCH.. MAXIMUM LEA THICKNESS INCLUES LEA FINISH THICKNESS. MINIMUM LEA THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. IMENSIONS AN E O NOT INCLUE MOL FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES IM MIN NOM MAX MIN NOM MAX A A b c E e L L H E STYLE 8: PIN. ANOE 2. NO CONNECTION. CATHOE SOLERING FOOTPRINT* SCALE 0: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 5 MB0/
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MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF Digital Transistors (BRT) R = 4.7 k, R = 4.7 k PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
NTHS2101P. Power MOSFET. 8.0 V, 7.5 A P Channel ChipFET
NTHSP Power MOSFET. V,. A P Channel ChipFET Features Offers an Ultra Low R S(on) Solution in the ChipFET Package Miniature ChipFET Package % Smaller Footprint than TSOP making it an Ideal evice for Applications
EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon
MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low V CE(sat) NPN Transistor
NSSC2MZ4, NSVC2MZ4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage
P2I2305NZ. 3.3V 1:5 Clock Buffer
3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
NSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSJ, NSVJ V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) )
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
MPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5
NSS40201LT1G NSV40201LT1G. 40 V, 2.0 A, Low V CE(sat) NPN Transistor. 40 VOLTS, 2.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS42LTG, NSV42LTG 4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage
NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNT Series, SMUNT Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
SMF5.0AT1G Series, SZSMF5.0AT1G Series. 200 W Transient Voltage Suppressor SOD-123 Flat Lead Package
SMF5.AT1G Series, SZSMF5.AT1G Series 2 W Transient Voltage Suppressor SOD-123 Flat Lead Package The SMF5.AT1G Series is designed to protect voltage sensitive components from high voltage, high energy transients.
MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45
MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter
BC846, BC847, BC848. General Purpose Transistors. NPN Silicon
General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
NVTFS5820NL. Power MOSFET 60 V, 11.5 m, Single N Channel, 8FL
Power MOFET 6 V,.5 m, ingle N Channel, 8FL Features mall Footprint (3.3x3.3 mm) for Compact esign Low R (on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses NVTF582NLWF Wettable
SNSS35200MR6T1G. 35 V, 5 A, Low V CE(sat) PNP Transistor. 35 VOLTS 5.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 100 m
35 V, 5 A, Low V CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current