NVTFS5820NL. Power MOSFET 60 V, 11.5 m, Single N Channel, 8FL

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1 Power MOFET 6 V,.5 m, ingle N Channel, 8FL Features mall Footprint (3.3x3.3 mm) for Compact esign Low R (on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses NVTF582NLWF Wettable Flanks Product AEC Q Qualified and PPAP Capable These evices are Pb Free and are RoH Compliant MAXIMUM RATING ( unless otherwise noted) Parameter ymbol Value Unit rain to ource Voltage V 6 V Gate to ource Voltage V G 2 V Continuous rain Current R J mb (Notes, 2, 3, 4) teady tate Power issipation R J mb (Notes, 2, 3) Continuous rain Current R JA (Notes & 3, 4) teady tate Power issipation R JA (Notes, 3) T mb = 25 C I 29 A T mb = C 2 T mb = 25 C P 2 W T mb = C T A = 25 C I A T A = C 8. T A = 25 C P 3.2 W T A = C.6 Pulsed rain Current T A = 25 C, t p = s I M 247 A Current limited by package (Note 4) T A = 25 C I maxpkg 7 A Operating Junction and torage Temperature T J, T stg 55 to 75 ource Current (Body iode) I 7 A ingle Pulse rain to ource Avalanche Energy (, V = 5 V, V G = V, I L(pk) = 3 A, L =. mh, R G = 25 ) Lead Temperature for oldering Purposes (/8 from case for s) C E A 48 mj T L 26 C tresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL REITANCE MAXIMUM RATING (Note ) Parameter ymbol Value Unit Junction to Mounting Board (top) teady tate (Note 2, 3) R J mb 7.3 C/W Junction to Ambient teady tate (Note 3) R JA 47. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JE5 2 for packages in which substantially less than % of the heat flows to single case surface. 3. urface mounted on FR4 board using a 65 mm 2, 2 oz. Cu pad. 4. Maximum current for pulses as long as second is higher but is dependent on pulse duration and duty cycle. V (BR) R (on) MAX I MAX 6 V G WFN8 ( 8FL) CAE 5AB XXXX A Y WW.5 V V N Channel 29 A MARKING IAGRAM G XXXX AYWW = pecific evice Code = Assembly Location = Year = Work Week = Pb Free Package (Note: Microdot may be in either location) ORERING INFORMATION ee detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. emiconductor Components Industries, LLC, 23 eptember, 23 Rev. 4 Publication Order Number: NVTF582NL/

2 ELECTRICAL CHARACTERITIC ( unless otherwise specified) Parameter ymbol Test Condition Min Typ Max Unit OFF CHARACTERITIC rain to ource Breakdown Voltage V (BR) V G = V, I = 25 A 6 V rain to ource Breakdown Voltage Temperature Coefficient V (BR) /T J 57 mv/ C Zero Gate Voltage rain Current I VG = V, V = 6 V. A T J = 25 C Gate to ource Leakage Current I G V = V, V G = ±2 V ± na ON CHARACTERITIC (Note 5) Gate Threshold Voltage V G(TH) V G = V, I = 25 A V Negative Threshold Temperature Coefficient V G(TH) /T J 6.2 mv/ C rain to ource On Resistance R (on) V G = V I = 8.7 A..5 m V G = 4.5 V I = 7.3 A 3. 5 Forward Transconductance g F V = 5 V, I = A 24.6 CHARGE, CAPACITANCE AN GATE REITANCE Input Capacitance C iss 462 pf Output Capacitance C oss V G = V, f =. MHz, V = 25 V 5 Reverse Transfer Capacitance C rss 96 Total Gate Charge Q G(TOT) V G = V, V = 48 V, I = A 28 nc Threshold Gate Charge Q G(TH) V G = 4.5 V, V = 48 V, I = A 5 Gate to ource Charge Q G 4 Gate to rain Charge Q G V G = 4.5 V, V = 48 V, I = A 8 Plateau Voltage V GP 3 V Gate Resistance R G.62 WITCHING CHARACTERITIC (Note 6) Turn On elay Time t d(on) Rise Time t r V G = 4.5 V, V = 48 V, 28 Turn Off elay Time t d(off) I = A, R G = Fall Time t f 22 RAIN OURCE IOE CHARACTERITIC Forward iode Voltage V VG = V, I = A Reverse Recovery Time t RR ns.79.2 V T J = 25 C.65 Charge Time t a V G = V, d I /d t = A/ s, 3 ischarge Time t b I = A 6 9 ns Reverse Recovery Charge Q RR 5 nc 5. Pulse Test: pulse width 3 s, duty cycle 2%. 6. witching characteristics are independent of operating junction temperatures. 2

3 TYPICAL CHARACTERITIC 8 7 V V G = 5 V 4. V 8 7 V V I, RAIN CURRENT (A) V V V V 3. V 2.8 V V, RAIN TO OURCE VOLTAGE (V) Figure. On Region Characteristics I, RAIN CURRENT (A) T J = 25 C T J = 55 C V G, GATE TO OURCE VOLTAGE (V) Figure 2. Transfer Characteristics R (on), RAIN TO OURCE REITANCE ( ) R (on), RAIN TO OURCE REITANCE (NORMALIZE) I = A V G, GATE TO OURCE VOLTAGE (V) Figure 3. On Resistance vs. Gate to ource Voltage V G = V I = A T J, JUNCTION TEMPERATURE ( C) Figure 5. On Resistance Variation with Temperature R (on), RAIN TO OURCE REITANCE ( ) I, LEAKAGE (na) V G = 4.5 V V G = V I, RAIN CURRENT (A),,, Figure 4. On Resistance vs. rain Current and Gate Voltage V G = V T J = 5 C T J = 25 C V, RAIN TO OURCE VOLTAGE (V) Figure 6. rain to ource Leakage Current vs. Voltage 3

4 TYPICAL CHARACTERITIC C, CAPACITANCE (pf) C iss V G = V V G, GATE TO OURCE VOLTAGE (V) Q gd Q gs 4 C oss 2 V = 48 V 2 I = A C rss Q T RAIN TO OURCE VOLTAGE (V) Figure 7. Capacitance Variation Q g, TOTAL GATE CHARGE (nc) Figure 8. Gate to ource Voltage vs. Total Charge t, TIME (ns) V = 48 V I = A V G = 4.5 V t r t f t d(on) t d(off) I, OURCE CURRENT (A) V G = V R G, GATE REITANCE ( ) Figure 9. Resistive witching Time Variation vs. Gate Resistance V, OURCE TO RAIN VOLTAGE (V) Figure. iode Forward Voltage vs. Current I, RAIN CURRENT (A) V G = V ingle Pulse T C = 25 C ms s s ms R (on) Limit Thermal Limit dc Package Limit.. V, RAIN VOLTAGE (V) Figure. Maximum Rated Forward Biased afe Operating Area E A, INGLE PULE RAIN TO OURCE AVALANCHE ENERGY (mj) I = 37 A T J, TARTING JUNCTION TEMPERATURE ( C) Figure 2. Maximum Avalanche Energy vs. tarting Junction Temperature 75 4

5 TYPICAL CHARACTERITIC R J(t) ( C/W) EFFECTIVE TRANIENT THERMAL REITANCE. uty Cycle = ingle Pulse PULE TIME (sec) Figure 3. Thermal Response EVICE ORERING INFORMATION evice Marking Package hipping NVTF582NLTAG 582 WFN8 5 / Tape & Reel NVTF582NLWFTAG 2LW WFN8 NVTF582NLTWG 582 WFN8 NVTF582NLWFTWG 2LW WFN8 5 / Tape & Reel 5 / Tape & Reel 5 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging pecifications Brochure, BR8/. 5

6 PACKAGE IMENION WFN8 3.3x3.3,.65P CAE 5AB IUE. C. C 8X b. C A B.5 C 4X L 2X.2 C A B 2X E E c TOP VIEW A IE VIEW ETAIL A e/2 4 K.2 C 6X e ETAIL A 4X A C EATING PLANE NOTE:. IMENIONING AN TOLERANCING PER AME Y4.5M, CONTROLLING IMENION: MILLIMETER. 3. IMENION AN E O NOT INCLUE MOL FLAH PROTRUION OR GATE BURR. PACKAGE OUTLINE MILLIMETER IM MIN NOM MAX A A..5 b c BC E E BC E e.65 BC G.3.4 K.65.8 L.3.43 L.6.3 M OLERING FOOTPRINT* 8X.42 MIN BC BC E BC PITCH INCHE NOM 4X.66 MAX E2 E3 M G BOTTOM VIEW L IMENION: MILLIMETER *For additional information on our Pb Free strategy and soldering details, please download the ON emiconductor oldering and Mounting Techniques Reference Manual, OLERRM/. ON emiconductor and are registered trademarks of emiconductor Components Industries, LLC (CILLC). CILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of CILLC s product/patent coverage may be accessed at Marking.pdf. CILLC reserves the right to make changes without further notice to any products herein. CILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does CILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in CILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. CILLC does not convey any license under its patent rights nor the rights of others. CILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the CILLC product could create a situation where personal injury or death may occur. hould Buyer purchase or use CILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold CILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that CILLC was negligent regarding the design or manufacture of the part. CILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON emiconductor P.O. Box 563, enver, Colorado 827 UA Phone: or Toll Free UA/Canada Fax: or Toll Free UA/Canada orderlit@onsemi.com N. American Technical upport: Toll Free UA/Canada Europe, Middle East and Africa Technical upport: Phone: Japan Customer Focus Center Phone: ON emiconductor Website: Order Literature: For additional information, please contact your local ales Representative NVTF582NL/

NVTFS5124PL. Power MOSFET 60 V, 6 A, 260 m, Single P Channel

NVTFS5124PL. Power MOSFET 60 V, 6 A, 260 m, Single P Channel Power MOSFET V, A, m, Single P Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses NVTFS5PLWF Wettable