Features D G. T A =25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1a) 3.8. (Note 1b) 1.6
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1 FDD564P 6V P-Channel PowerTrench MOSFET FDD564P General Description This 6V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications. Applications DC/DC converter Power management Load switch Features 5 A, 6 V. R DS(ON) = V GS = V R DS(ON) = 3 V GS = 4.5 V Fast switching speed High performance trench technology for extremely low R DS(ON) High power and current handling capability S G D G S TO-252 D Absolute Maximum Ratings T A =25 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage 6 V V GSS Gate-Source Voltage ±2 V I D Drain Current Continuous (Note 3) 5 A Pulsed (Note a) 45 P D Power Dissipation for Single Operation (Note ) 42 W (Note a) 3.8 (Note b).6 T J, T STG Operating and Storage Junction Temperature Range 55 to +75 C Thermal Characteristics R θjc Thermal Resistance, Junction-to-Case (Note ) 3.5 C/W R θja Thermal Resistance, Junction-to-Ambient (Note a) 4 C/W R θja Thermal Resistance, Junction-to-Ambient (Note b) 96 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD564P FDD564P 3 6mm 25 units 25 Semiconductor Components Industries, LLC. October-27, Rev.2 Publication Order Number: FDD564P /D
2 Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note ) W DSS I AR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Off Characteristics V DD = 3 V, I D = 4.5 A 9 mj 4.5 A BV DSS Drain Source Breakdown Voltage V GS = V, I D = 25 µa 6 V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 25 µa, Referenced to 25 C 49 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 48 V, V GS = V µa I GSSF Gate Body Leakage, Forward V GS = 2V, V DS = V na I GSSR Gate Body Leakage, Reverse V GS = 2 V, V DS = V na FDD564P On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 25 µa.6 3 V VGS(th) T J R DS(on) Gate Threshold Voltage Temperature Coefficient Static Drain Source On Resistance I D = 25 µa, Referenced to 25 C 4 mv/ C V GS = V, I D = 4.5 A 76 mω V GS = 4.5 V, I D = 3.9 A 99 3 V GS = V,I D = 4.5 A,T J =25 C I D(on) On State Drain Current V GS = V, V DS = 5 V 2 A g FS Forward Transconductance V DS = 5 V, I D = 3 A 8 S Dynamic Characteristics C iss Input Capacitance V DS = 3 V, V GS = V, 759 pf C oss Output Capacitance f =. MHz 9 pf Reverse Transfer Capacitance 39 pf C rss Switching Characteristics (Note 2) t d(on) Turn On Delay Time V DD = 3 V, I D = A, 7 4 ns t r Turn On Rise Time V GS = V, R GEN = 6 Ω 2 ns t d(off) Turn Off Delay Time 9 34 ns t f Turn Off Fall Time 2 22 ns Q g Total Gate Charge V DS = 3V, I D = 4.5 A, 5 24 nc Q gs Gate Source Charge V GS = V 2.5 nc Gate Drain Charge 3. nc Q gd Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current 3.2 A V SD Drain Source Diode Forward Voltage V GS = V, I S = 3.2 A (Note 2).8.2 V 2
3 Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. FDD564P a) R θja = 4 C/W when mounted on a in 2 pad of 2 oz copper b) R θja = 96 C/W when mounted on a minimum pad. Scale : on letter size paper 2. Pulse Test: Pulse Width < 3µs, Duty Cycle < 2.% PD R 3. Maximum current is calculated as: DS(ON) where P D is maximum power dissipation at T C = 25 C and R DS(on) is at T J(max) and V GS = V. Package current limitation is 2A 3
4 Typical Characteristics I D, DRAIN CURRENT (A) 5 V GS = -V -4.5V 2-6.V -4.V -3.5V V 3-2.5V V DS, DRAIN-SOURCE VOLTAGE (V) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = -3.5V -4.V -4.5V -5.V -6.V -V I D, DRAIN CURRENT (A) FDD564P Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.4 R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = -4.5A V GS = -V R DS(ON), ON-RESISTANCE (OHM).3.2. T A = 25 o C T A = 25 o C I D = -2.3 A T J, JUNCTION TEMPERATURE ( o C) V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. I D, DRAIN CURRENT (A) V DS = -5V T A = -55 o C 25 o C 25 o C I S, REVERSE DRAIN CURRENT (A).. V GS = V T A = 25 o C 25 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4
5 Typical Characteristics V GS, GATE-SOURCE VOLTAGE (V) I D = -4.5A 8 V DS = -4V -3V 6-2V Q g, GATE CHARGE (nc) CAPACITANCE (pf) C ISS 2 C OSS C RSS V DS, DRAIN TO SOURCE VOLTAGE (V) f = MHz V GS = V FDD564P Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. I D, DRAIN CURRENT (A). R DS(ON) LIMIT V GS = -V SINGLE PULSE R θja = 96 o C/W T A = 25 o C.. DC s s ms -V DS, DRAIN-SOURCE VOLTAGE (V) ms ms µs P(pk), PEAK TRANSIENT POWER (W) t, TIME (sec) SINGLE PULSE R θja = 96 C/W T A = 25 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D = SINGLE PULSE t, TIME (sec) P(pk) R θja (t) = r(t) + R θja R θja = 96 C/W t t 2 T J - T A = P * R θja (t) Duty Cycle, D = t / t 2 Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design. 5
6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
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Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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