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1 Is Now Part of To learn more about ON emiconductor, please visit our website at Please note: As part of the Fairchild emiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON emiconductor s system requirements. ince the ON emiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON emiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at Please any questions regarding the system integration to Fairchild_questions@onsemi.com. ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2 FDM756 N-Channel PowerTrench yncfet TM 5 V, 49 A,.45 mω Features Max r D(on) =.45 mω at V G = V, I D = 3 A Max r D(on) =. mω at V G = 4.5 V, I D = 6 A Advanced Package and ilicon combination for low r D(on) and high efficiency yncfet chottky Body Diode ML robust package design % UIL tested RoH Compliant Top Bottom General Description October 4 The FDM756 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest r D(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic chottky body diode. Applications ynchronous Rectifier for ynchronous Buck Converters Notebook erver Telecom High Efficiency DC-DC witch Mode Power upplies Pin G D D G FDM756 N-Channel PowerTrench yncfet TM Power 56 D D D D D D 7 8 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V D Drain to ource Voltage 5 V V G Gate to ource Voltage (Note 4) ± V I D Thermal Characteristics Drain Current -Continuous (Package limited) T C = 5 C 49 -Continuous (ilicon limited) T C = 5 C 8 -Continuous T A = 5 C (Note a) 3 -Pulsed 8 E A ingle Pulse Avalanche Energy (Note 3) mj Power Dissipation T C = 5 C 89 P D Power Dissipation T A = 5 C (Note a).5 T J, T TG Operating and torage Junction Temperature Range -55 to +5 C A W R θjc Thermal Resistance, Junction to Case.4 R θja Thermal Resistance, Junction to Ambient (Note a) 5 Package Marking and Ordering Information C/W Device Marking Device Package Reel ize Tape Width Quantity FDM756 FDM756 Power 56 3 mm 3 units Fairchild emiconductor Corporation FDM756 Rev.C3
3 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV D Drain to ource Breakdown Voltage I D = ma, V G = V 5 V ΔBV D Breakdown Voltage Temperature ΔT J Coefficient I D = ma, referenced to 5 C mv/ C I D Zero Gate Voltage Drain Current V D = V, V G = V 5 μa I G Gate to ource Leakage Current, Forward V G = V, V D = V na On Characteristics (Note ) V G(th) Gate to ource Threshold Voltage V G = V D, I D = ma V ΔV G(th) ΔT J Gate to ource Threshold Voltage Temperature Coefficient I D = ma, referenced to 5 C -5 mv/ C V G = V, I D = 3 A..45 r D(on) tatic Drain to ource On Resistance V G = 4.5 V, I D = 6 A.6. mω V G = V, I D = 3 A, T J = 5 C.6. g F Forward Transconductance V D = 5 V, I D = 3 A 7 Dynamic Characteristics C iss Input Capacitance pf V D = 3 V, V G = V, C oss Output Capacitance 56 pf f = MHz C rss Reverse Transfer Capacitance pf R g Gate Resistance.8.8 Ω FDM756 N-Channel PowerTrench yncfet TM witching Characteristics t d(on) Turn-On Delay Time 6 9 ns t r Rise Time V DD = 3 V, I D = 3 A, ns t d(off) Turn-Off Delay Time V G = V, R GEN = 6 Ω 4 66 ns t f Fall Time 4.8 ns Q g Total Gate Charge V G = V to V nc Q g Total Gate Charge V G = V to 4.5 V V DD = 3 V, 3 43 nc Q gs Gate to ource Gate Charge I D = 3 A 3.4 nc Q gd Gate to Drain Miller Charge 7.5 nc Drain-ource Diode Characteristics V G = V, I = A (Note ).4.7 V D ource to Drain Diode Forward Voltage V V G = V, I = 3 A (Note ).76. t rr Reverse Recovery Time ns I F = 3 A, di/dt = 3 A/μs Q rr Reverse Recovery Charge nc Notes:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 5 C/W when mounted on a in pad of oz copper. b. 5 C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < 3 μs, Duty cycle <.%. 3. E A of mj is based on starting T J = 5 C, L = mh, I A = A, V DD = 3 V, V G = V. % test at L =.3 mh, I A = 3 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDM756 Rev.C3
4 Typical Characteristics T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO OURCE ON-REITANCE Figure. V G = V V G = 4.5 V V G = 3.5 V I D = 3 A V G = V V G = 3 V PULE DURATION = 8 μs DUTY CYCLE =.5% MAX V G =.5 V V D, DRAIN TO OURCE VOLTAGE (V) NORMALIZED DRAIN TO OURCE ON-REITANCE I D, DRAIN CURRENT (A) On-Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) rd(on), DRAIN TO OURCE ON-REITANCE (mω) V G =.5 V PULE DURATION = 8 μs DUTY CYCLE =.5% MAX V G = 3 V V G = 3.5 V V G = 4.5 V V G = V I D = 3 A PULE DURATION = 8 μs DUTY CYCLE =.5% MAX T J = 5 o C T J = 5 o C V G, GATE TO OURCE VOLTAGE (V) FDM756 N-Channel PowerTrench yncfet TM Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to ource Voltage I D, DRAIN CURRENT (A) PULE DURATION = 8 μs DUTY CYCLE =.5% MAX V D = 5 V T J = 5 o C T J = 5 o C T J = -55 o C I, REVERE DRAIN CURRENT (A) 8. V G = V T J = 5 o C T J = 5 o C T J = -55 o C V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics V D, BODY DIODE FORWARD VOLTAGE (V) Figure 6. ource to Drain Diode Forward Voltage vs ource Current FDM756 Rev.C3 3
5 Typical Characteristics T J = 5 C unless otherwise noted VG, GATE TO OURCE VOLTAGE (V) IA, AVALANCHE CURRENT (A) I D = 3 A Figure 7. V DD = V V DD = 3 V Q g, GATE CHARGE (nc) V DD = 6 V. 3 V D, DRAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to ource Voltage T J = 5 o C T J = 5 o C T J = o C.. 5 t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) I D, DRAIN CURRENT (A) 5 5 f = MHz V G = V Limited by Package V G = 4.5 V V G = V R θjc =.4 o C/W C iss C oss C rss T c, CAE TEMPERATURE ( o C) FDM756 N-Channel PowerTrench yncfet TM Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous Drain Current vs Case Temperature ID, DRAIN CURRENT (A) 3 THI AREA I ms LIMITED BY r D(on) INGLE PULE s. T J = MAX RATED s R θja = 5 o C/W DC T A = 5 o C... V D, DRAIN to OURCE VOLTAGE (V) Figure. Forward Bias afe Operating Area ms ms ), PEAK TRANIENT POWER (W) P(PK V G = V INGLE PULE R θja = 5 o C/W T A = 5 o C t, PULE WIDTH (sec) Figure. ingle Pulse Maximum Power Dissipation FDM756 Rev.C3 4
6 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θja.. DUTY CYCLE-DECENDING ORDER D = INGLE PULE R θja = 5 o C/W t, RECTANGULAR PULE DURATION (sec) Figure 3. Junction-to-Ambient Transient Thermal Response Curve P DM t t NOTE: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A FDM756 N-Channel PowerTrench yncfet TM FDM756 Rev.C3 5
7 Typical Characteristics (continued) yncfet chottky body diode Characteristics Fairchild s yncfet process embeds a chottky diode in parallel with PowerTrench MoFET. This diode exhibits similar characteristics to a discrete external chottky diode in parallel with a MOFET. Figure 4 shows the reverses recovery characteristic of the FDM756. CURRENT (A) di/dt = 3 A/μs TIME (ns) chottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. I D, REVERE LEAKAGE CURRENT (A) T J = 5 o C T J = o C T J = 5 o C V D, REVERE VOLTAGE (V) FDM756 N-Channel PowerTrench yncfet TM Figure 4. FDM756 yncfet body diode reverse recovery characteristic Figure 5. yncfet body diode reverses leakage versus drain-source voltage FDM756 Rev.C3 6
8 PQFN8 5X6,.7P CAE 483AE IUE A 5. PKG CL 8 5 A B EE DETAIL B PKG LC (.5) (.34) (.3) (X) 4 TOP VIEW IDE VIEW EE DETAIL C.5.3 (8X). C A B (.5) X C.8 C OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR IDE OF THE PACKAGE DETAIL C CALE: : C 3 4 EATING PLANE 3.8 LAND PATTERN RECOMMENDATION DETAIL B CALE: : KEEP OUT AREA - NOTE: UNLE OTHERWIE PECIFIED A. PACKAGE TANDARD REFERENCE: JEDEC MO-4, IUE A, VAR. AA,. B. DIMENION DO NOT INCLUDE BURR OR MOLD FLAH. MOLD FLAH OR BURR DOE NOT EXCEED.MM. C. ALL DIMENION ARE IN MILLIMETER. D. DIMENIONING AND TOLERANCING PER AME Y4.5M-9. E. IT I RECOMMENDED TO HAVE NO TRACE OR VIA WITHIN THE KEEP OUT AREA (8X) ±. BOTTOM VIEW
9 ON emiconductor and are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at Marking.pdf. ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON emiconductor 95 E. 3nd Pkwy, Aurora, Colorado 8 UA Phone: or Toll Free UA/Canada Fax: or Toll Free UA/Canada orderlit@onsemi.com emiconductor Components Industries, LLC N. American Technical upport: Toll Free UA/Canada Europe, Middle East and Africa Technical upport: Phone: Japan Customer Focus Center Phone: ON emiconductor Website: Order Literature: For additional information, please contact your local ales Representative
10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON emiconductor: FDM756
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON emiconductor, please visit our website at www.onsemi.com ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON emiconductor, please visit our website at www.onsemi.com ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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