FDH50N50 / FDA50N50 N-Channel UniFET TM MOSFET 500 V, 48 A, 105 mω Features
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1 FDH5N5 / FDA5N5 N-Channel UniFET TM MOSFET 5 V, 48 A, 15 mω Features R DS(on) = 89 mω = 1 V, = 24 A Low Gate Charge (Typ. 15 nc) Low C rss (Typ. 45 pf) 1% Avalanche Tested Improved dv/dt Capability Description UniFET TM MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications Lighting Uninterruptible Power Supply AC-DC Power Supply D G D G S TO-247 D S TO-3PN Absolute Maximum Ratings T C = 25 o C unless otherwise noted. G S Symbol Parameter FDH5N5-F133 / FDA5N5 Unit S Drain-Source Voltage 5 V Drain Current - Continuous (T C = 25 C) - Continuous (T C = 1 C) M Drain Current - Pulsed (Note 1) 192 A S Gate-Source voltage ±2 V E AS Single Pulsed Avalanche Energy (Note 2) 1868 mj I AR Avalanche Current (Note 1) 48 A E AR Repetitive Avalanche Energy (Note 1) 62.5 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 2 V/ns P D Power Dissipation (T C = 25 C) - Derate Above 25 C T J, T STG Operating and Storage Temperature Range -55 to +15 C T L Maximum Lead Temperature for Soldering, 3 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDH5N5-F133 / FDA5N5 Unit R θjc Thermal Resistance, Junction-to-Case, Max..2 C/W R θja Thermal Resistance, Junction-to-Ambient, Max A A W W/ C 212 Semiconductor Components Industries, LLC. September-217, Rev. 3 Publication Order Number: FDH5N5-F133/D
2 Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDH5N5-F133 FDH5N5 TO-247 Tube N/A N/A 3 units FDA5N5 FDA5N5 TO-3PN Tube N/A N/A 3 units Electrical Characteristics T C = 25 C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics BS Drain-Source Breakdown Voltage = V, = 25 μa V ΔBS Breakdown Voltage Temperature / ΔT J Coefficient = 25 μa, Referenced to 25 C V/ C SS Zero Gate Voltage Drain Current = 5 V, = V = 4 V, T C = 125 C I GSSF Gate-Body Leakage Current, Forward = 2 V, = V na I GSSate-Body Leakage Current, Reverse = -2 V, = V na On Characteristics (th) Gate Threshold Voltage =, = 25 μa V R DS(on) Static Drain-Source On-Resistance = 1 V, = 24 A Ω g FS Forward Transconductance = 4 V, = 48 A S Dynamic Characteristics C iss Input Capacitance = 25 V, = V, pf C oss Output Capacitance f = 1 MHz pf C rss Reverse Transfer Capacitance pf C oss Output Capacitance = 4 V, = V, f = 1 MHz pf C oss(eff.) Effective Output Capacitance = V to 4 V, = V pf Switching Characteristics t d(on) Turn-On Delay Time V DD = 25 V, = 48 A, ns t r Turn-On Rise Time = 1 V, = 25 Ω ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4) ns Q g Total Gate Charge = 4 V, = 48 A nc Q gs Gate-Source Charge = 1 V nc Q gd Gate-Drain Charge (Note 4) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = V, I S = 48 A V t rr Reverse Recovery Time = V, I S = 48 A, ns Q rr Reverse Recovery Charge di F /dt =1 A/μs μc μa μa Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 1.46 mh, I AS = 48 A, V DD = 5 V, = 25 Ω, starting T J = 25 C. 3. I SD 48 A, di/dt 2 A/μs, V DD BS, starting T J = 25 C. 4. Essentially independent of operating temperature typical characteristics. 2
3 Typical Performance Characteristics R DS(ON) [Ω],, Drain Current [A] Drain-Source On-Resistance Figure 1. On-Region Characteristics 1 2 Top : 15. V 1. V 8. V 7. V 6.5 V 6. V 1 1 Bottom : 5.5 V , Drain-Source Voltage [V] 1. 25μs Pulse Test 2. T C = 25 o C Figure 2. Transfer Characteristics , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperatue = 1V , Drain Current [A] = 2V Note : T J = 25 o C, Drain Current [A] R, Reverse Drain Current [A] o C 25 o C -55 o C 15 o C 25 o C 1. = 4V 2. 25μs Pulse Test 1. = V 2. 25μs Pulse Test V SD, Source-Drain Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Capacitance [pf] 12, 1, 8, 6, 4, 2, C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = V 2. f = 1 MHz C oss C iss, Drain-Source Voltage [V], Gate-Source Voltage [V] = 1V = 25V = 4V Note : = 48A Q G, Total Gate Charge [nc] 3
4 Typical Performance Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage, Drain Current [A] Figure 7. Breakdown Voltage Variation vs. Temperature = V 2. = 25 μa T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area T C = 25 o C 2. T J = 15 o C 3. Single Pulse Operation in This Area is Limited by R DS(on) DC 1 us 1 us 1 ms 1 ms R DS(ON), (Normalized), Drain Current [A] Figure 8. On-Resistance Variation vs. Temperature Drain-Source On-Resistance T J, Junction Temperature [ o C] Figure 1. Maximum Drain Current vs. Case Temperature = 1 V 2. = 24 A , Drain-Source Voltage [V] T C, Case Temperature [ o C] Figure 11. Typical Drain Current Slope Figure 12. Typical Drain-Source Voltage vs. Gate Resistance Slope vs. Gate Resistance di/dt [A/μS] 4, 3,5 3, 2,5 2, 1,5 1, di/dt(off) di/dt(on) 1. = 4 V 2. = 12 V 3. = 25A 4. T J = 125 o C dv/dt [V/nS] dv/dt(off) dv/dt(on) 1. = 4 V 2. = 12 V 3. = 25A 4. T J = 125 o C , Gate resistance [Ω] , Gate resistance [Ω] 4
5 Typical Performance Characteristics (Continued) Energy [μj] Figure 13. Typical Switching Losses vs. Gate Resistance 1, = 4 V 2. = 12 V 3. = 25A 4. T J = 125 o C , Gate resistance [Ω] Z θjc Z (t), θjc (t), Thermal Thermal Response Response [ o C/W] Eoff Eon Figure 15. Transient Thermal Resistance Curve D= single pulse Figure 14. Unclamped Inductive Switching Capability I AS, Avalanche Current [A] 1 1 Starting T J = 15 o C 1. If R = Ω t AV = (L)(I AS )/(1.3 Rated BS - V DD ) 2. If R Ω t AV = (L/R)In[(I AS x R)/(1.3 Rated BS - V DD )+1] Starting T J = 25 o C Z θjc (t) =.2 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θjc (t) P DM t 1 t 2 t AV, Time In Avalanche [ms] t 1, Square Wave Pulse Duration [sec] 5
6 12V 2nF I G = const. 3mA 5KΩ Same Type as DUT 3nF V GS 1V R L V DS 9% Q g Q gs Q gd DUT Charge Figure 16. Gate Charge Test Circuit & Waveform V DD V 1 DUT 1% t d(on) t r t d(off) tf t on t off Figure 17. Resistive Switching Test Circuit & Waveforms L E AS = LI 2 2 AS BS BS -V DD BS I AS V DD (t) V 1 DUT V DD (t) t p Figure 18. Unclamped Inductive Switching Test Circuit & Waveforms t p Time 6
7 DUT I SD Driver + _ L Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD ( Driver ) Gate Pulse Width D = Gate Pulse Period 1V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 19. Peak Diode Recovery dv/dt Test Circuit & Waveforms 7
8 Mechanical Dimensions Figure 2. TO-247, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. 8
9 Mechanical Dimensions Figure 21. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. 9
10 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor E. 32nd Pkwy, Aurora, Colorado 811 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
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Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 65 A, 40 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance
More informationDescription TO-3PN D S. Symbol Parameter FDA18N50 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDA18N50 N-Channel UniFET TM MOSFET 500 V, 19 A, 265 m Features R DS(on) = 265 m (Max.) @ = 10 V, ID = 9.5 A Low Gate Charge (Typ. 45 nc) Low C rss (Typ. 25 pf) 100% Avalanche Tested Applications PDP TV
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Dual Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
More informationFeatures. Symbol Parameter Ratings Units V DSS Drain-Source Voltage -40 V
FDS4675-F085 40V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor s advanced Power Tranch process. It has been optimized for power management
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FDG6301N-F085 Dual N-Channel, Digital FET Features 25 V, 0.22 A continuous, 0.65 A peak. R DS(ON) = 4 @ V GS = 4.5 V, R DS(ON) = 5 @ V GS = 2.7 V. Very low level gate drive requirements allowing directoperation
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FGH40N60SFDTU-F085 600 V, 40 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 2.3 V @ I C = 40 A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive
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FGH4TSMD V, 4 A Field Stop Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V(Typ.) @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications UPS, welder,
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FQD2N90 / FQU2N90 N-Channel QFET MOSFET 900 V, 1.7 A, 7.2 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology.
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FDPC444 Common Drain N-Channel PowerTrench MOSFET 3 V, 7 A, 4.3 mω Features Max r SS(on) = 4.3 mω at V GS = V, I SS = 7 A Max r SS(on) = 6.4 mω at V GS = 4.5 V, I SS = 3 A Pakage size/height: 3.3 x 3.3
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RURD66S9AF85 Ultrafast Power Rectifier, 6A 6V Features High Speed Switching ( t rr =63ns(Typ.) @ =6A ) Low Forward Voltage( V F =.26V(Typ.) @ =6A ) Avalanche Energy Rated AECQ Qualified Applications General
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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FGH12040WD 1200 V, 40 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J = 175 o C Positive Temperature Co-efficient for Easy Parallel Operating Low Saturation Voltage: V CE(sat) = 2.3
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RURP56F85 5A, 6V Ultrafast Rectifier Features High Speed Switching ( t rr =52ns(Typ.) @ I F =5A ) Low Forward Voltage( V F =.5V(Max.) @ I F =5A ) Avalanche Energy Rated AECQ Qualified Applications Automotive
More informationFeatures S 1. TA=25 o C unless otherwise noted
FC5P V P-Channel Logic Level PowerTrench MOSFET FC5P General escription This V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
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FGHT65SPD-F5 65V, A Field Stop Trench IGBT Features AEC-Q Qualified Low Saturation Voltage : V CE(sat) =.5 V(Typ.) @ I C = A % of the parts are dynamically tested (Note ) Short Circuit Ruggedness > 5 μs
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RURG86F85 8A, 6V Ultrafast Rectifier Features High Speed Switching ( t rr =74ns(Typ.) @ I F =8A ) Low Forward Voltage( V F =.34V(Typ.) @ I F =8A ) Avalanche Energy Rated AECQ Qaulified Applications Automotive
More informationNCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
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More informationFeatures -4 A, -30 V. R DS(ON) G 3. = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage -30 V
FC65P Single P-Channel, Logic Level, PowerTrench TM MOSFET General escription This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially
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FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ
More informationFeatures 2.5 A, 30 V. R DS(ON) = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage 30 V
FC5AN ual N-Channel Logic Level PowerTrench TM MOSFET General escription Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially
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FFSP1665A Silicon Carbide Schottky Diode 65 V, 16 A Features Max Junction Temperature 175 o C Avalanche Rated 81 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
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FFSP65A Silicon Carbide Schottky Diode 65 V, A Features Max Junction Temperature 75 o C Avalanche Rated 6 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
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NS3N N-Channel Logic Level Enhancement Mode Field Effect Transistor General escription These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's
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800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate
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FQPF7N60 FQPF7N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
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250V P-Channel MOSFET April 2000 QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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FQPF6N60 FQPF6N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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FQA24N60 FQA24N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
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