IRFM120 N-CHNNEL Electrical Characteristics (T =25% unless otherwise specified) Characteristic Min. Typ. Max. Units Test Condition BS Drain-Source Bre
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1 dvanced Power MOSFET FETURES IEEE802.3af Compatible! valanche Rugged Technology! Rugged Gate Oxide Technology! Lower Input Capacitance! Improved Gate Charge! Extended Safe Operating rea! Lower Leakage Current : 10 # =! Lower R DS(ON) : 0.155! (Typ.) IRFM120 BS = R DS(on) = 0.2! I D = 2.3 SOT bsolute Maximum Ratings 1. Gate 2. Drain 3. Source Characteristic alue Units S Drain-to-Source oltage I D Continuous Drain Current (T =25%) 2.3 Continuous Drain Current (T =70%) 1.84 I DM E S I R E R dv/dt Drain Current-Pulsed Gate-to-Source oltage Single Pulsed valanche Energy valanche Current Repetitive valanche Energy Peak Diode Recovery dv/dt ' ( 18 " mj mj /ns P D Total Power Dissipation (T =25%) * 2.4 W Linear Derating Factor * W/% T J, T STG Operating Junction and Storage Temperature Range - 55 to +150 T L Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds 300 % Thermal Resistance R $J Characteristic Typ. Max. Units Junction-to-mbient * 52 %/W * When mounted on the minimum pad size recommended (PCB Mount) Semiconductor Components Industries, LLC December-2017, Rev 3 Publication Order Number: IRFM120/D
2 IRFM120 N-CHNNEL Electrical Characteristics (T =25% unless otherwise specified) Characteristic Min. Typ. Max. Units Test Condition BS Drain-Source Breakdown oltage =0,I D =250#.B/.T J Breakdown oltage Temp. Coeff /% I D =250# See Fig 7 (th) Gate Threshold oltage =5,I D =250# I GSS Gate-Source Leakage, Forward Gate-Source Leakage, Reverse - n =20 =-20 I DSS Drain-to-Source Leakage Current 1 10 # =30 - = =80,T =125% R DS(on) Static Drain-Source On-State Resistance 0.2 ) =10,I D = g fs Forward Transconductance 3.12 S =40,I D = C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance pf =0, =25,f =1MHz See Fig 5 t d(on) t r t d(off) t f Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ns =50,I D =9.2, R G =18) See Fig 13 +, Q g Total Gate Charge =80, =10, Q gs Gate-Source Charge 2.7 nc I D =9.2 Q gd Gate-Drain( Miller ) Charge 7.8 See Fig 6 Fig 12 +, Source-Drain Diode Ratings and Characteristics Characteristic Min. Typ. Max. Units Test Condition I S I SM Continuous Source Current Pulsed-Source Current Integral reverse pn-diode in the MOSFET SD Diode Forward oltage T J =25%,I S =2.3, =0 t rr Reverse Recovery Time 98 ns T J =25%,I F =9.2 Q rr Reverse Recovery Charge 0.34 #C di F /dt=/#s + Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ' L=35mH, I S =2.3, =25, R G =27), Starting T J =25% ( I SD *9.2, di/dt*300/#s, *BS, Starting T J =25% + Pulse Test : Pulse Width = 250#s, Duty Cycle * 2%, Essentially Independent of Operating Temperature - djusted for Cisco 2
3 N-CHNNEL IRFM120 Fig 1. Output Characteristics Fig 2. Transfer Characteristics Top : Bottom : "s Pulse Test 2. T = 25 o C, Drain-Source oltage [] 25 o C 150 o C - 55 o C 1. = 0 2. = "s Pulse Test , Gate-Source oltage [] 0.4 Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward oltage R DS(on), [ #] Drain-Source On-Resistance = 10 = Note : T J = 25 o C I DR, Reverse Drain Current [] 150 o C 25 o C 1. = "s Pulse Test SD, Source-Drain oltage [] Capacitance [pf] Fig 5. Capacitance vs. Drain-Source oltage 600 C iss = C gs + C gd ( C ds = shorted ) C C oss = C ds + C gd iss C rss = C gd C oss C rss 0, Drain-Source oltage [] 1. = 0 2. f = 1 MHz, Gate-Source oltage [] 10 5 Fig 6. Gate Charge vs. Gate-Source oltage = 20 = 50 = 80 I D = Q G, Total Gate Charge [nc] 3
4 IRFM120 N-CHNNEL 1.2 Fig 7. Breakdown oltage vs. Temperature 3.0 Fig 8. On-Resistance vs. Temperature BS, (Normalized) Drain-Source Breakdown oltage = 0 2. I D = 250 " R DS(on), (Normalized) Drain-Source On-Resistance = I D = T J, Junction Temperature [ o C] T J, Junction Temperature [ o C] 10 2 Fig 9. Max. Safe Operating rea Operation in This rea is Limited by R DS(on) 1. T = 25 o C "s 1 ms 10 ms ms 2. T J = 150 o C 3. Single Pulse , Drain-Source oltage [] DC 10 "s Fig 10. Max. Drain Current vs. mbient Temperature T, mbient Temperature [ o C] Z!J (t), Thermal Response 10 2 D= single pulse Fig 11. Thermal Response 1. Z!J (t)=52 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM -T =P DM *Z!J (t) t 1, Square Wave Pulse Duration [sec] P DM t 1 t 2 4
5 N-CHNNEL IRFM120 Fig 12. Gate Charge Test Circuit Waveform 12 * Current Regulator 50K! 200nF 300nF Same Type as 10 Q g Q gs Q gd 3m Current Sampling (I G ) Resistor R 1 R 2 Current Sampling (I D ) Resistor Charge Fig 13. Resistive Switching Test Circuit Waveforms R L in out ( 0.5 rated ) out 90% R G 10 in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit Waveforms L L 1 E S = L L I 2 2 S BS BS ary t p to obtain required peak I D ID BS I S R G C I D (t) 10 (t) t p t p Time 5
6 IRFM120 N-CHNNEL Fig 15. Peak Diode Recovery dv/dt Test Circuit Waveforms + I S L Driver RG Same Type as dv/dt controlled by / G I S controlled by Duty Factor 0? ( Driver ) Gate Pulse Width D = Gate Pulse Period 10 I S ( ) I FM, Body Diode Forward Current di/dt I RM ( ) Body Diode Reverse Current Body Diode Recovery dv/dt f Body Diode Forward oltage Drop 6
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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