Characteristic Value Units

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1 dvanced Power MOSFET SFP9630 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : -10 µ = -200 Low R DS(ON) : Ω (Typ.) BS = -200 R DS(on) = 0.8 Ω I D = -6.5 TO bsolute Maximum Ratings S I D I DM E S I R E R dv/dt P D T J, T STG T L Drain-to-Source oltage Thermal Resistance Continuous Drain Current (T C =25 o C) Continuous Drain Current (T C =100 o C) Drain Current-Pulsed Gate-to-Source oltage Single Pulsed valanche Energy valanche Current Repetitive valanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T C =25 o C) Linear Derating Factor Operating Junction and Characteristic alue Units Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds O 2 O 3 1.Gate 2. Drain 3. Source _ to mj mj /ns W W/ o C o C R θjc R θcs R θj Characteristic Typ. Max. Units Junction-to-Case Case-to-Sink Junction-to-mbient o C/W Rev. B 1999 Fairchild Semiconductor Corporation

2 SFP9630 P-CHNNEL Electrical Characteristics (T C =25 o C unless otherwise specified) Characteristic Min. Typ. Max. Units Test Condition BS B/ T J (th) I GSS I DSS Drain-Source Breakdown oltage Breakdown oltage Temp. Coeff. Gate Threshold oltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Drain-to-Source Leakage Current / o C n µ =0,I D =-250µ I D =-250µ See Fig 7 =-5,I D =-250µ =-30 =30 =-200 =-160,T C =125 o C R DS(on) g fs C iss C oss C rss t d(on) t r t d(off) t f Q g Q gs Q gd Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( Miller ) Charge Ω Ω pf ns nc =-10,I D =-3.3 O 4 =-40,I D =-3.3 O 4 =0, =-25,f =1MHz See Fig 5 =-100,I D =-6.5, R G =12Ω See Fig 13 O 4 O5 =-160, =-10, I D =-6.5 See Fig 6 & Fig 12 O 4 O5 Source-Drain Diode Ratings and Characteristics I S I SM SD t rr Q rr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward oltage Reverse Recovery Time Reverse Recovery Charge O 4 Min. Typ Max. Units ns µc Test Condition Integral reverse pn-diode in the MOSFET T J =25 o C,I S =-6.5, =0 T J =25 o C,I F =-6.5 di F /dt=100/µs O 4 Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 L=20mH, I S =-6.5, =-50, R G =27Ω*, Starting T J =25 o C O 3 I SD <_ -6.5, di/dt<_ 400/µs, <_ BS, Starting T J =25 o C O 4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_ 2% O5 Essentially Independent of Operating Temperature

3 P-CHNNEL SFP9630 Fig 1. Output Characteristics Fig 2. Transfer Characteristics Top : Bottom : µs Pulse Test 2. T C = 25 o C -, Drain-Source oltage [] 25 o C 150 o C - 55 o C 1. = 0 2. = µs Pulse Test , Gate-Source oltage [] R DS(on), [Ω] Drain-Source On-Resistance Fig 3. On-Resistance vs. Drain Current = -10 = Note : T J = 25 o C I DR, Reverse Drain Current [] Fig 4. Source-Drain Diode Forward oltage 150 o C 25 o C 1. = µs Pulse Test SD, Source-Drain oltage [] Capacitance [pf] Fig 5. Capacitance vs. Drain-Source oltage C iss C oss C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 0 -, Drain-Source oltage [] 1. = 0 2. f = 1 MHz -, Gate-Source oltage [] 10 5 Fig 6. Gate Charge vs. Gate-Source oltage = -40 = -100 = -160 I D = Q G, Total Gate Charge [nc]

4 SFP9630 P-CHNNEL -BS, (Normalized) Drain-Source Breakdown oltage Fig 7. Breakdown oltage vs. Temperature 1. = 0 2. I D = -250 µ R DS(on), (Normalized) Drain-Source On-Resistance Fig 8. On-Resistance vs. Temperature 1. = I D = T J, Junction Temperature [ o C] T J, Junction Temperature [ o C] -I D, Drain Current [] 10 2 Fig 9. Max. Safe Operating rea Operation in This rea is Limited by R DS(on) 0.1 ms 1 ms 10 ms DC 1. T = 25 o C C 2. T = 150 o C J Fig 10. Max. Drain Current vs. Case Temperature Single Pulse , Drain-Source oltage [] T c, Case Temperature [ o C] Fig 11. Thermal Response Z θjc (t), Thermal Response D= single pulse 1. Z θjc (t)=1.79 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM -T C =P DM *Z θjc (t) P. DM t 1ṫ t 1, Square Wave Pulse Duration [sec]

5 P-CHNNEL SFP9630 Fig 12. Gate Charge Test Circuit & Waveform 12 Current Regulator 50KΩ 200nF 300nF Same Type as -10 Q g Q gs Q gd -3m Current Sampling (I G ) Resistor R 1 R 2 Current Sampling (I D ) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms R L out t d(on) t on t r t off t t f d(off) R G in ( 0.5 rated ) in 10% -10 out 90% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L L 1 E S = L L I 2 2 S BS BS ary t p to obtain required peak I D ID t p Time R G C I D (t) (t) -10 I S t p BS

6 SFP9630 P-CHNNEL Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms + I S L Driver RG Compliment of (N-Channel) dv/dt controlled by R G I S controlled by Duty Factor D ( Driver ) Gate Pulse Width D = Gate Pulse Period 10 Body Diode Reverse Current I S ( ) I RM I FM, Body Diode Forward Current di/dt f ( ) Body Diode Forward oltage Drop Body Diode Recovery dv/dt

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Characteristic Value Units

Characteristic Value Units dvanced Power MOSFET IRF630 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : 10 µ (Max.)