Advanced Power Electronics Corp.
|
|
- Arnold Ryan
- 5 years ago
- Views:
Transcription
1 dvanced Power Electronics Corp P76I--HF Halogen-Free Product N-CHNNEL ENHNCEMENT MODE POWER MOSFET % valanche Test D BV DSS 65V Fast Switching Characteristic R DS(ON) Ω Simple Drive Requirement I D G RoHS Compliant S Description P76 series are from dvanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance It provides the designer with an extreme efficient device for use in a wide range of power applications The TO-CFM package is widely preferred for all commercialindustrial through hole applications The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink bsolute Maximum Ratings G D S TO-CFM(I) Symbol Parameter Rating Units V DS Drain-Source Voltage 65 V V GS Gate-Source Voltage +3 V I C =5 Continuous Drain Current, V V I C = Continuous Drain Current, V V 6 I DM Pulsed Drain Current 36 P C =5 Total Power Dissipation 37 W E S Single Pulse valanche Energy 65 mj I R valanche Current T STG Storage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 /W Data & specifications subject to change without notice 5
2 P76I--HF Electrical j =5 o C(unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =m V R DS(ON) Static Drain-Source On-Resistance 3 V GS =V, I D =5 - - Ω V GS(th) Gate Threshold Voltage V DS =V GS, I D =5u - V g fs Forward Transconductance V DS =V, I D =5 - - S I DSS Drain-Source Leakage Current V DS =6V, V GS =V - - u I GSS Gate-Source Leakage V GS = +3V, V DS =V n Q g Total Gate Charge I D = nc Q gs Gate-Source Charge V DS =5V - - nc Q gd Gate-Drain ("Miller") Charge V GS =V nc t d(on) Turn-on Delay Time V DD =3V ns t r Rise Time I D = - - ns t d(off) Turn-off Delay Time R G =Ω - - ns t f Fall Time V GS =V ns C iss Input Capacitance V GS =V pf C oss Output Capacitance V DS =5V pf C rss Reverse Transfer Capacitance f=mhz pf Source-Drain Diode Symbol Parameter Test Conditions Min Typ Max Units V SD Forward On Voltage 3 I S =, V GS =V V t rr Reverse Recovery Time I S =, V GS =V, ns Q rr Reverse Recovery Charge di/dt=/µs µc Notes: Pulse width limited by max junction temperature Starting T j =5 o C, V DD =5V, L=mH, R G =5Ω, I S = 3Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTTIC DISCHRGE, PLESE HNDLE WITH CUTION USE OF THIS PRODUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZED PEC DOES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY NY LICENSE UNDER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PRODUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR DESIGN
3 P76I--HF 6 I D, Drain Current () T C =5 o C V 7V 6V 5V V GS =V I D, Drain Current () 6 T C =5 o C V 7V 6V 5V V GS =V Fig Typical Output Characteristics Fig Typical Output Characteristics 3 I D =5 V G =V Normalized BV DSS Normalized R DS(ON) T j, Junction Temperature ( o C) T j, Junction Temperature ( o C ) Fig 3 Normalized BV DSS vs Junction Fig Normalized On-Resistance Temperature vs Junction Temperature 5 3 I S () 6 T j = 5 o C T j = 5 o C Normalized V GS(th) V SD, Source-to-Drain Voltage (V) T j, Junction Temperature ( o C) Fig 5 Forward Characteristic of Fig 6 Gate Threshold Voltage vs Reverse Diode Junction Temperature 3
4 P76I--HF 6 I D = f=mhz V GS, Gate to Source Voltage (V) V DS =33V V DS =V V DS =5V C (pf) 3 C iss 6 Q G, Total Gate Charge (nc) C oss C rss Fig 7 Gate Charge Characteristics Fig Typical Capacitance Characteristics Duty factor=5 I D () T c =5 o C Single Pulse us ms ms ms s DC Normalized Thermal Response (R thjc ) 5 Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thjc + T C t, Pulse Width (s) Fig 9 Maximum Safe Operating rea Fig Effective Transient Thermal Impedance V DS 9% V G Q G V Q GS Q GD % V GS t d(on) t r t d(off) t f Charge Q Fig Switching Time Waveform Fig Gate Charge Waveform
5 MRKING INFORMTION P76I--HF 76I YWWSSS Part Number Option Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5
Advanced Power Electronics Corp.
dvanced Power Electronics Corp P6SLI Halogen-Free Product N-CHNNEL ENHNCEMENT MODE POWER MOSFET Fast Switching Characteristic V DS @ T j,max 65V Simple Drive Requirement R DS(ON) Ω RoHS Compliant & Halogen-Free
More informationAdvanced Power Electronics Corp.
dvanced Power Electronics Corp. P6679GH/J-HF Halogen-Free Product P-CHNNEL ENHNCEMENT MODE POWER MOSFET Lower On-resistance D BV DSS -3V Simple Drive Requirement R DS(ON) 9mΩ Fast Switching Characteristic
More informationAP2764I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
RoHS-compliant Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET % valanche Test D BV DSS 6V Fast Switching Characteristic R DS(ON).Ω Simple Drive Requirement I D 9 G S Description
More informationAP9997GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
P9997GP RoHS-compliant Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BV DSS V Lower Gate Charge R DS(ON) mω Fast Switching Characteristic I D
More informationAP9997GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
RoHS-compliant Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BV DSS V Lower Gate Charge R DS(ON) mω Fast Switching Characteristic I D G Description
More informationAdvanced Power Electronics Corp.
dvanced Power Electronics Corp. P4T3GS/P-HF Halogen-Free Product N-CHNNEL ENHNCEMENT MODE POWER MOSFET Simple Drive Requirement D BV DSS 3V Low Gate Charge R DS(ON) 25mΩ Fast Switching Characteristic I
More informationAP2311GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.
Halogen-Free Product dvanced Power P-CHNNEL ENHNCEMENT MODE Electronics Corp POWER MOSFET Simple Drive Requirement D BV DSS -6V Small Package Outline R DS(ON) mω Surface Mount Device I D - S RoHS Compliant
More informationAP9971GD RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
RoHS-compliant Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BV DSS 6V Fast Switching Speed R DS(ON) mω D PDIP-8 Package I D Description PDIP-8 S S G
More informationAP4957AGM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.
RoHS-compliant Product dvanced Power P-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BV DSS -3V Simple Drive Requirement R DS(ON) 6mΩ Dual P MOSFET Package I D -7. Description
More informationAdvanced Power Electronics Corp.
Advanced Power Electronics Corp AP65SL99AWL Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET % R g & UIS Test D V DS @ T j,max 7V Fast Switching Characteristic R DS(ON) 99mΩ 3 Simple Drive
More informationAP2311GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.
Halogen-Free Product dvanced Power P-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOSFET Simple rive Requirement BV SS -6V Small Package Outline R S(ON) mω Surface Mount evice I -. RoHS Compliant SOT-3
More informationAdvanced Power Electronics Corp.
dvanced Power Electronics Corp P4T3GH/J-HF Halogen-Free Product N-CHNNEL ENHNCEMENT MODE POWER MOFET imple Drive Requirement D BV D 3V Low Gate Charge R D(ON) 25mΩ Fast witching Characteristic I D 28 G
More informationAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
dvanced Power N-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOSFET Simple rive Requirement BV SS 4V Fast Switching Characteristic R S(ON) 5mΩ Low On-resistance I 7.8 escription SO-8 S S S P9465EM RoHS-compliant
More informationAdvanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.
dvanced Power P-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOSFET Simple rive Requirement BV SS -3V Small Package Outline R S(ON) 8mΩ Surface Mount evice I - 3.2 RoHS Compliant escription SOT-23 G S
More informationS S. Drain-Source Voltage -30 V Gate-Source Voltage + 25 V. at T = 70 C Continuous Drain Current 3
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -3V Fast Switching Performance R S(ON) mω G RoHS-compliant, Halogen-free I -9. S SS escription dvanced Power MOSFETs
More informationAP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp.
AP5GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge D N-CH BV DSS V S Low On-resistance D R DS(ON) 7mΩ Surface Mount Package I D.A
More informationD1/D2 S1 G1 S2 G2 TO-252-4L
Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS-compliant, halogen-free Description S1 G1 S2 G2 D1/D2 TO-252-4L
More informationAP0803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
P83GMT-HF Halogen-Free Product dvanced Power N-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOFET imple rive Requirement BV 3V O-8 Compatible R (ON) 8.5mΩ Low On-resistance I 5 G RoH Compliant escription
More informationDual N-channel Enhancement-mode Power MOSFETs
Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate-charge RoHS-compliant halogen-free SO- package BV DS(ON) D DSS 3V mω Fast Switching Performance I 7.6A R D D Description
More informationAP6900GSM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp.
AP69GSM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE S/D2 Simple Drive Requirement CH- BV DSS 3V S/D2 DC-DC Converter Suitable R DS(ON) 3mΩ G S/D2
More information-55 to 150 C Operating Junction Temperature Range -55 to 150 C. Parameter
N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low Gate Charge Fast Switching Performance R DS(ON) 25mΩ G RoHS-compliant, halogen-free I D 28A S BV DSS 30V Description Advanced Power
More informationAOT428 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The OT uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for
More informationG2 S2 S1 G1 SO-8. Symbol Parameter V ±20 ±20 V A A A 2.0 W Linear Derating Factor W/ C Storage Temperature Range
AP5GM-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free Description D D D D SO- G S S
More informationP2G N2D/P2D P1S/P2S P1G N2G N1S N2S SO-8 N1G N1D/P1D. Symbol Parameter
Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance Full Bridge Applications RoHS-compliant, halogen-free Description PG ND/PD PS/PS PG SO-8 NG
More informationAOD4132 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The OD3 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is ideally
More informationAOI472 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description Features The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable
More informationSMK0990FD Advanced N-Ch Power MOSFET
z SMK0990FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =900V Low gate charge: Q g =52nC (Typ.) Low drain-source On resistance: R DS(on) =1.4Ω
More informationSMN630LD Logic Level N-Ch Power MOSFET
Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage: BV DSS =200V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On-Resistance: R DS(on) =0.34Ω
More informationSMN01L20Q Logic Level N-Ch Power MOSFET
Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features 0.85A, 200V, R DS(on) =1.35Ω @ V GS =10V Low gate charge: Q g =4nC (Typ.) Fast switching 100% avalanche tested RoHS compliant device D
More informationSMK1360FD Advanced N-Ch Power MOSFET
Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features BV DDS =600V (Min.) Low gate charge: Q g =41nC (Typ.) Low drain-source On resistance: R DS(on) =0.65Ω (Max.) 100% avalanche tested RoHS
More informationAP85T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
P85T3GH/J RoHS-compliant Product dvancd Powr N-CHNNEL ENHNCEMENT MODE Elctronics Corp. POWER MOSFET Low Gat Charg D BV DSS 3V Simpl Driv Rquirmnt R DS(ON) 6mΩ Fast Switching G I D 75 S Dscription Th TO-252
More informationG D S. Drain-Source Voltage 100. at T =100 C Continuous Drain Current to 150 C Operating Junction Temperature Range -55 to 150 C
AP1T1AGH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Fast Switching haracteristics Low Gate harge R DS(ON) 16mΩ G RoHS-compliant, halogen-free I D 9A S BV DSS 1V Description
More informationSMK0460IS Advanced N-Ch Power MOSFET
Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On resistance: R DS(on) =2.1Ω
More informationCharacteristic Value Units
dvanced Power MOSFET IRF630 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : 10 µ (Max.)
More informationCharacteristic Value Units
dvanced Power MOSFET SFP9630 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : -10 µ (Max.)
More informationAP90T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
P9T3GH/J RoHS-compliant Product dvancd Powr N-CHNNEL ENHNCEMENT MODE Elctronics Corp. POWER MOSFET Lowr On- rsistanc D BV DSS 3V Simpl Driv Rquirmnt R DS(ON) 4mΩ Fast Switching Charactristic G I D 75 S
More informationCharacteristic Value Units
dvanced Power MOSFET SSW/IN60 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : 25 µ (Max.)
More informationGP1M018A020CG GP1M018A020PG
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP1M18A2CG N-channel MOSFET BS R DS(on) MAX 2V 18A
More informationAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
dvancd Powr N-CHNNEL ENHNCEMENT MODE Elctronics Corp. POWER MOSFET Low Gat Charg D BV DSS 3V Simpl Driv Rquirmnt R DS(ON) 8mΩ Fast Switching I D 5 G S Dscription P5N3GH/J RoHS-compliant Product TO-252
More informationOperating Junction and 55 to +175 C Storage Temperature Range
Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage
More informationFeatures. Information SOT-223. Part Number. Marking. Package SOT-223 SNN01Z60. Unit. V Gate-source voltage A A I DM T c =25 C I D.
Logic Level Gate Drive Application SNN01Z60Q Logic Level N-Ch Power MOSFET Features Logic levell gate drive Max. R DS(ON N) = 135mΩ at V GS = 10V, I D = 0.5A Low R DS(on) provides higher efficiency ESD
More informationGP2M005A050CG GP2M005A050PG
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance N-channel MOSFET BS R DS(on) 5V.5A < 1.5W D-PAK I-PAK
More informationMDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω
General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS
More informationHFP4N65F / HFS4N65F 650V N-Channel MOSFET
HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers
More informationHGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS
, HGI29NSL P- Feature High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness % UIS Tested, % Rg Tested Lead Free, Halogen Free V N-Ch Power MOSFET V
More informationGP2M020A050H GP2M020A050F
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A
More informationUNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF7476 is a N-channel Power MOSFET, it uses UTC s advanced technology to provide the customers
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.
More informationMDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,
More informationFeatures V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit
General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,
More informationFeatures. Information I-PAK G D S. Marking. Part Number. Package. I-PAK (Short Lead) SMK0160. Unit. V Gate-source voltage T c =25 C I D I DM
Features SWITCHING REGULATO OR APPLICATION Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g = 3.9nC (Typ.) Low drain-source On resistance: R DS(on) =11.5Ω (Max.) 100% avalanche
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 20A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC s advanced technology to provide the customers with a minimum on-state resistance,
More informationMDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω
General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power
More informationCharacteristic Value Units Drain-to-Source Voltage. 5.6 Continuous Drain Current (T C =100 )
dvanced Power MOSFET IRF510 FETURES n valanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating rea n 175 C Operating Temperature
More informationTO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationN-Channel 60 V (D-S), 175 C MOSFET, Logic Level
N-Channel 6 V (D-S), 75 C MOSFET, Logic Level SUD23N6-3L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a.3 at V GS = V 23 6.45 at V GS = 4.5 V 9.5 FEATURES TrenchFET Power MOSFET 75 C Junction Temperature
More informationG S. Drain-Source Voltage -16 V Gate-Source Voltage. ±8 V at T = 70 C Continuous Drain Current 3
AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -1V Surface Mount evice R S(ON) mω G RoHS-compliant, halogen-free I -A S SS escription Advanced Power MOSFETs
More informationUNISONIC TECHNOLOGIES CO., LTD UFC8N80K
UNISONIC TECHNOLOGIES CO., LTD UFC8N80K 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFC8N80K provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationG S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -V Surface Mount evice R S(ON) 9mΩ G RoHS-compliant, halogen-free I -3.A S SS escription Advanced Power MOSFETs from
More informationUNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the
More informationMDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω
General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationMDFS11N60 N-Channel MOSFET 600V, 11A, 0.55Ω
General Description The MDFS11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDFS11N6 is suitable device for SMPS,
More informationUNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide
More informationSSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationMDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω
MDF11N6 N-channel MOSFET 6V MDF11N6 N-Channel MOSFET 6V, 11A,.55Ω General Description The MDF11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance
More informationAOL1422 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is ESD protected and
More informationMDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω
MDDN5 N-Channel MOSFET 5V, 3.A,.75Ω General Description The MDDN5 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More information30V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTD12N3AT, TTP12N3AT 3V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in
More information40V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 40V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast
More informationG S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs
More informationCharacteristic Value Units Drain-to-Source Voltage Continuous Drain Current (T C =100 C)
dvanced Power MOSFET SFF9250L FETURES Logic-Level Gate Drive valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitances Improved Gate Charge Extended Safe Operating rea Lower Leakage
More informationN-Channel 40-V (D-S), 175 C MOSFET
N-Channel 4-V (D-S), 75 C MOSFET SUD5N4-9H PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A) c Q g (Typ) 4.9 at V GS = V 5 55 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature High Threshold Voltage
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6.5 Amps, 00 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N0 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and
More informationUNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC s advanced trench technology
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology.
More informationG S. Drain-Source Voltage -30 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W Linear Derating Factor 0.
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -3V Surface Mount evice R S(ON) 75mΩ RoHS-compliant, Halogen-free G S I -3.7A SS escription Advanced Power MOSFETs
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
More informationG S. Drain-Source Voltage 30 V Gate-Source Voltage ± 8 V at T = 70 C Continuous Drain Current 3. P D at T A =25 C Total Power Dissipation 1.
AP236AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate rive Lower On-resistance Surface-Mount evice R S(ON) 35mΩ RoHS-compliant, Halogen-free G S I 5A BV SS 3V escription Advanced Power
More informationMDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω
MDP15N6G / MDF15N6G N-Channel MOSFET 6V MDP15N6G / MDF15N6G N-Channel MOSFET 6V, 15A,.4Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides
More informationG S. Drain-Source Voltage 30 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
N-channel Enhancement-mode Power MOSFET Simple rive Requirement Low Gate Charge Surface Mount evice R S(ON) 2mΩ RoHS-compliant, halogen-free G S I.7A BV SS 3V escription Advanced Power MOSFETs from APEC
More informationN-Channel Power MOSFET 800V, 0.3A, 21.6Ω
N-Channel Power MOSFET 800V, 0.3A, 21.6Ω FEATURES Advanced planar process 100% avalanche tested Fast switching APPLICATION Power Supply Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 800
More informationAdvanced Power Electronics Corp.
AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -.A SS escription Advanced Power
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More information20V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTE8N2AT 2V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC
More information30V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 3V N-Channel Trench MOSFET TTG9N3AT APPLICATIONS Synchronous Rectification in DC/DC and AC/DC
More informationACE2305B. P-Channel Enhancement Mode Field Effect Transistor. Description
Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
More informationP-Channel 100 V (D-S) MOSFET
SUD9P-95 P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) Q g (Typ.).95 at V GS = - V - 8.8 -.7.2 at V GS = - 4.5 V - 8.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
More informationMDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω
MDFNG N-channel MOSFET V MDFNG N-Channel MOSFET V, A,.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high
More informationUNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced
More informationUNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET -21A, -40V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized
More informationMDS9652E Complementary N-P Channel Trench MOSFET
MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,
More informationHFI50N06A / HFW50N06A 60V N-Channel MOSFET
HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche
More informationMDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω
MDF13N65B N-Channel MOSFET 65V, 14A,.46Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance
More information