AP2311GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.

Transcription

1 Halogen-Free Product dvanced Power P-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOSFET Simple rive Requirement BV SS -6V Small Package Outline R S(ON) mω Surface Mount evice I -. RoHS Compliant SOT-3 G escription S dvanced Power MOSFETs from PEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-3 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as C/C converters. G S bsolute Maximum Ratings V S V GS = Continuous rain Current 3 -. =7 Continuous rain Current 3 -. I M Symbol Parameter Rating rain-source Voltage - 6 Gate-Source Voltage + Pulsed rain Current - = Total Power issipation.3 Linear erating Factor. T STG Storage Temperature Range - to T J Operating Junction Temperature Range - to Units V V W W/ Thermal ata Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 9 /W ata and specifications subject to change without notice 63

2 Electrical j = o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV SS rain-source Breakdown Voltage V GS =V, I =-u V ΔBV SS /ΔT j Breakdown Voltage Temperature Coefficient Reference to, I =-m V/ R S(ON) Static rain-source On-Resistance V GS =-V, I =-. - mω V GS =-.V, I = mω V GS(th) Gate Threshold Voltage V S =V GS, I =-u V g fs Forward Transconductance V S =-V, I =- - - S I SS rain-source Leakage Current V S =-6V, V GS =V u rain-source Leakage Current (T j =7 o C) V S =-V, V GS =V u I GSS Gate-Source Leakage V GS =+V n Q g Total Gate Charge I =- - 6 nc Q gs Gate-Source Charge V S =-V - - nc Q gd Gate-rain ("Miller") Charge V GS =-.V nc t d(on) Turn-on elay Time V S =-3V - - ns t r Rise Time I =- - - ns t d(off) Turn-off elay Time R G =3.3Ω,V GS =-V - - ns t f Fall Time R =3Ω ns C iss Input Capacitance V GS =V - pf C oss Output Capacitance V S =-V - - pf C rss Reverse Transfer Capacitance f=.mhz - - pf R g Gate Resistance f=.mhz Ω Source-rain iode Symbol Parameter Test Conditions Min. Typ. Max. Units V S Forward On Voltage I S =-., V GS =V V t rr Reverse Recovery Time I S =-, V GS =V, ns Q rr Reverse Recovery Charge di/dt=/µs nc Notes:.Pulse width limited by Max. junction temperature..pulse width <3us, duty cycle <%. 3.Surface mounted on in copper pad of FR board, t <sec ; 7 /W when mounted on Min. copper pad. THIS PROUCT IS SENSITIVE TO ELECTROSTTIC ISCHRGE, PLESE HNLE WITH CUTION. USE OF THIS PROUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZE. PEC OES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY NY LICENSE UNER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS. PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PROUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR ESIGN.

3 -I, rain Current () 7. T = o C -V -7.V -.V -.V V G = -3.V -I, rain Current () T = o C -V -7.V -.V -.V V G = - 3.V Fig. Typical Output Characteristics Fig. Typical Output Characteristics. I =-. T = o C.6 I =-. V G =-V R S(ON) (mω) 3 Normalized R S(ON) V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig. Normalized On-Resistance v.s. Junction Temperature.. -I S ()... T j = o C T j = o C Normalized -V GS(th) (V) V S, Source-to-rain Voltage (V). - T j, Junction Temperature ( o C) Fig. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. 3

4 f=.mhz -V GS, Gate to Source Voltage (V) 6 I =- V S = - V C (pf) C iss C oss C rss 6 Q G, Total Gate Charge (nc) Fig 7. Gate Charge Characteristics Fig. Typical Capacitance Characteristics uty factor=. -I ().. T = o C Single Pulse us ms ms ms s C Normalized Thermal Response (R thja ) Single Pulse P M t T uty factor = t/t Peak T j = P M x R thja + T a R thja = 7 /W t, Pulse Width (s) Fig 9. Maximum Safe Operating rea Fig. Effective Transient Thermal Impedance V S =-V V G -I, rain Current () 6 T j = o C T j = o C -.V Q GS Q G Q G Charge Q 3 6 -V GS, Gate-to-Source Voltage (V) Fig. Transfer Characteristics Fig. Gate Charge Circuit

5 Package Outline : SOT-3 VNCE POWER ELECTRONICS CORP. e E E SYMBOLS Millimeters MIN NOM MX e E E...6.ll imension re In Millimeters..imension oes Not Include Mold Protrusions. Part Marking Information & Packing : SOT-3 Laser Marking NGSS Part Number : NG If second letter has underline : HF & Rohs product If second letter has not underline : Rohs product ate Code : SS:,, SS:3,7, SS:,6, SS:,,9 "~Z" showed on 3rd position --> week ~ week 6, "~Z" showed on th position --> week 7 ~ week.