Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.

Transcription

1 dvancd Powr N-CHNNEL ENHNCEMENT MOE Elctronics Corp. POWER MOSFET Low On-rsistanc BV SS 4V Singl riv Rquirmnt R S(ON) mω Surfac Mount Packag I 32 scription dvancd Powr MOSFETs from PEC provid th dsignr with th bst combination of fast switching, ruggdizd dvic dsign, low on-rsistanc and costffctivnss. G S P9962GH/J RoHS-compliant Product G S TO-252(H) Th TO-252 packag is widly prfrrd for all commrcial-industrial surfac mount applications and suitd for low voltag applications such as C/C convrtrs. Th through-hol vrsion (P9962GJ) ar availabl for low-profil applications. G S TO-25(J) bsolut Maximum Ratings V S V GS Symbol Paramtr Rating Units C =25 C = I M rain-sourc Voltag 4 Gat-Sourc Voltag + Continuous rain Currnt, V V 32 Continuous rain Currnt, V V Pulsd rain Currnt 5 C =25 Total Powr issipation 34.7 Linar rating Factor.27 T STG Storag Tmpratur Rang -55 to 5 T J Oprating Junction Tmpratur Rang -55 to 5 V V W W/ Thrmal ata Symbol Paramtr Valu Unit Rthj-c Maximum Thrmal Rsistanc, Junction-cas 4.5 /W Rthj-a Maximum Thrmal Rsistanc, Junction-ambint /W ata and spcifications subjct to chang without notic 8972

2 P9962GH/J Elctrical j =25 o C(unlss othrwis spcifid) Symbol Paramtr Tst Conditions Min. Typ. Max. Units BV SS rain-sourc Brakdown Voltag V GS =V, I =25u V ΔBV SS /ΔT j Brakdown Voltag Tmpratur Cofficint Rfrnc to 25, I =m -. - V/ R S(ON) Static rain-sourc On-Rsistanc 2 V GS =V, I = - - mω V GS =4.5V, I = mω V GS(th) Gat Thrshold Voltag V S =V GS, I =25u - 3 V g fs Forward Transconductanc V S =V, I = S I SS rain-sourc Lakag Currnt V S =4V, V GS =V - - u rain-sourc Lakag Currnt (T j =5 o C) V S =32V,V GS =V u I GSS Gat-Sourc Lakag V GS = +V n Q g Total Gat Charg 2 I = nc Q gs Gat-Sourc Charg V S =32V nc Q gd Gat-rain ("Millr") Charg V GS =4.5V nc t d(on) Turn-on lay Tim 2 V S =V ns t r Ris Tim I = ns t d(off) Turn-off lay Tim R G =3.3Ω,V GS =V - - ns t f Fall Tim R =.Ω ns C iss Input Capacitanc V GS =V pf C oss Output Capacitanc V S =25V pf C rss Rvrs Transfr Capacitanc f=.mhz pf Sourc-rain iod Symbol Paramtr Tst Conditions Min. Typ. Max. Units V S Forward On Voltag 2 I S =32, V GS =V V t rr Rvrs Rcovry Tim 2 I S =, V GS =V, ns Q rr Rvrs Rcovry Charg di/dt=/µs nc Nots:.Puls width limitd by Max. junction tmpratur. 2.Puls tst THIS PROUCT IS SENSITIVE TO ELECTROSTTIC ISCHRGE, PLESE HNLE WITH CUTION. USE OF THIS PROUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZE. PEC OES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY NY LICENSE UNER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS. PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PROUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR ESIGN. 2

3 P9962GH/J 4 T C =25 o C V 8.V T C =5 o C V 8.V I, rain Currnt () V 4.5V I, rain Currnt () V 4.5V V G =3.V V G =3.V V S, rain-to-sourc Voltag (V) V S, rain-to-sourc Voltag (V) Fig. Typical Output Charactristics Fig 2. Typical Output Charactristics 36.8 R S(ON) (mω) I = T C =25 o C Normalizd R S(ON) I = V G =V V GS, Gat-to-Sourc Voltag (V) Fig 3. On-Rsistanc v.s. Gat Voltag T j, Junction Tmpratur ( o C) Fig 4. Normalizd On-Rsistanc v.s. Junction Tmpratur I S () 5 T j =5 o C T j =25 o C V GS(th) (V) V S, Sourc-to-rain Voltag (V) T j, Junction Tmpratur ( o C) Fig 5. Forward Charactristic of Fig 6. Gat Thrshold Voltag v.s. Rvrs iod Junction Tmpratur 3

4 P9962GH/J 4 f=.mhz VGS, Gat to Sourc Voltag (V) I = V S =V V S =25V V S =32V C (pf) Ciss Coss Crss Q G, Total Gat Charg (nc) V S, rain-to-sourc Voltag (V) Fig 7. Gat Charg Charactristics Fig 8. Typical Capacitanc Charactristics I () T C =25 o C Singl Puls us ms ms ms s C Normalizd Thrmal Rspons (R thjc ). uty factor= Singl Puls P M t T uty factor = t/t Pak T j = P M x R thjc + T C.. V S, rain-to-sourc Voltag (V) t, Puls Width (s) Fig 9. Maximum Saf Oprating ra Fig. Effctiv Transint Thrmal Impdanc V S 9% V G 4.5V Q G Q GS Q G % V GS t d(on) t r t d(off) t f Charg Q Fig. Switching Tim Wavform Fig 2. Gat Charg Wavform 4

5 Packag Outlin : TO-252 VNCE POWER ELECTRONICS CORP. B E2 Millimtrs SYMBOLS MIN NOM MX B E E3 F E F F F E E C ll imnsions r in Millimtrs. 2.imnsion os Not Includ Mold Protrusions. 2 R :.27~.38 3 (.mm C Part Marking Information & Packing : TO GH YWWSSS LOGO Part Numbr Packag Cod mt Rohs rquirmnt at Cod (YWWSSS) Y:Last igit Of Th Yar WW:Wk SSS:Squnc 5

6 Packag Outlin : TO-25 VNCE POWER ELECTRONICS CORP. c SYMBOLS Millimtrs MIN NOM MX B E E B c c B2 B F E E F ll imnsions r in Millimtrs. c 2.imnsion os Not Includ Mold Protrusions. Part Marking Information & Packing : TO GJ YWWSSS LOGO Part Numbr Packag Cod at Cod (YWWSSS) Y :Last igit Of Th Yar WW:Wk SSS :Squnc mt Rohs rquirmnt for low voltag MOSFET only 6