ZXM64N02 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.040Ω; ID=5.4A MSOP8

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1 2V N-CHANNEL ENHANCEMENT MOE MOSFET SUMMARY V(BR)SS=2V; RS(ON)=.4Ω; I=5.4A ESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS C - C Converters Power Management Functions isconnect switches Motor control ORERING INFORMATION EVICE REEL SIZE (inches) TAPE WITH (mm) QUANTITY PER REEL ZXM64N2XTA 7 2mm embossed units S S S G Top View ZXM64N2XTC 3 2mm embossed 4 units EVICE MARKING ZXM64N2

2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT rain-source Voltage V SS 2 V Gate- Source Voltage V GS ± 2 V Continuous rain Current (V GS =4.5V; T A =25 C)(b) I 5.4 A (V GS =4.5V; T A =7 C)(b) 4.3 Pulsed rain Current (c) I M 3 A Continuous Source Current (Body iode)(b) I S 2.4 A Pulsed Source Current (Body iode)(c) I SM 3 A Power issipation at T A =25 C (a) Linear erating Factor Power issipation at T A =25 C (b) Linear erating Factor THERMAL RESISTANCE P. 8.8 P W mw/ C W mw/ C Operating and Storage Temperature Range T j :T stg -55 to +5 C PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θja 3 C/W Junction to Ambient (b) R θja 7 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 2

3 TYPICAL CHARACTERISTICS I - rain Current (A) m Refer Note (a) C s ms ms ms us. VS - rain-source Voltage (V) Safe Operating Area Ref Note (a) Max Power issipation (Watts) Refer Note (b) Refer Note (a) T - Temperature ( C) erating Curve 8 2 Thermal Resistance ( C/W) =.5 =.2 =. Single Pulse Single Pulse Pulse Width (s) Transient Thermal Impedance Refer Note (b) Themal Resistance ( C/W) =.5 =.2 =. Pulse Width (s) Transient Thermal Impedance Refer Note (a) 3

4 ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONITIONS. STATIC rain-source Breakdown Voltage V (BR)SS 2 V I =25µA, V GS =V Zero Gate Voltage rain Current I SS µa V S =2V, V GS =V Gate-Body Leakage I GSS na V GS =± 2V, V S =V Gate-Source Threshold Voltage V GS(th).7 V I =25µA, V S = V GS Static rain-source On-State Resistance () R S(on).4.5 Ω Ω V GS =4.5V, I =3.8A V GS =2.7V, I =.9A Forward Transconductance (3) g fs 6. S V S =V,I =.9A YNAMIC (3) Input Capacitance C iss pf Output Capacitance C oss 35 pf Reverse Transfer Capacitance C rss pf V S =5 V, V GS =V, f=mhz SWITCHING(2) (3) Turn-On elay Time t d(on) 5.7 ns Rise Time t r 9.6 ns Turn-Off elay Time t d(off) 28.3 ns Fall Time t f.6 ns Total Gate Charge Q g 6 nc Gate-Source Charge Q gs 3.5 nc Gate rain Charge Q gd 5.4 nc V =V, I =3.8A R G =6.2Ω, R =2.6Ω (Refer to test circuit) V S =6V,V GS =4.5V, I =3.8A (Refer to test circuit) SOURCE-RAIN IOE iode Forward Voltage () V S.95 V T j =25 C, I S =3.8A, V GS =V Reverse Recovery Time (3) t rr 23.7 ns T j =25 C, I F =3.8A, di/dt= A/µs Reverse Recovery Charge(3) Q rr 3.3 nc () Measured under pulsed conditions. Width=3µs. uty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. 4

5 I - rain Current (A) 25 C TYPICAL CHARACTERISTICS VGS 5.V 4.5V 4.V 3.5V 3.V.5V 2.5V 2.V I - rain Current (A) +5 C VGS 5V 4.5V 4.V 3.5V 3.V 2.5V 2.V.5V.. VS - rain-source Voltage (V) Output Characteristics.. VS - rain-source Voltage (V) Output Characteristics I - rain Current (A) VS=V T=5 C T=25 C VGS - Gate-Source Voltage (V) Typical Transfer Characteristics Normalised RS(on) and VGS(th) RS(on) VGS=4.5V I=3.8A VGS(th) VGS=VS I=25µA 5 Tj - Junction Temperature ( C) Normalised RS(on) and VGS(th) v Temperature 2 RS(on) - rain-source On-Resistance (Ω). VGS=2.V VGS=2.5V VGS=4.5V. m I - rain Current (A) On-Resistance v rain Current IS - Reverse rain Current (A) T=25 C T=5 C VS - Source-rain Voltage (V) Source-rain iode Forward Voltage 5

6 TYPICAL CHARACTERISTICS C - Capacitance (pf) Ciss Coss Crss Vgs=V f=mhz VS - rain Source Voltage (V) Capacitance v rain-source Voltage VGS - Gate-Source Voltage (V) I=3.8A VS=6V Q -Charge (nc) Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit 6

7 PACKAGE IMENSIONS IM Millimetres Inches MIN MAX MIN MAX A A E H B e X 6 θ C e.65 BSC.256 BSC A A B C L E H 4.9 BSC.93 BSC Conforms to JEEC MO-87 Iss A L q 6 6 PA LAYOUT ETAILS Zetex plc. Chadderton Technology Park, Chadderton, Oldham, OL9-9LL, United Kingdom. Telephone: (44) (Sales), (44) (General Enquiries) Fax: (44) Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Kustermann-park 7 Veterans Mem. Highway Metroplaza, Tower agents and distributors in -854 München Hauppauge, NY 788 Hing Fong Road major countries world-wide Germany USA Kwai Fong, Hong Kong Zetex plc 999 Telefon: (49) Telephone: (56) Telephone:(852) 26 6 Fax: (49) Fax: (56) Fax: (852) Internet: This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 7