N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options. 14-Lead QFN* 5.00x5.00mm body 1.00mm height (max) 1.

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1 Suprtx inc. Faturs Vry low gat thrshold voltag Dsignd to b sourc-drivn Low switching losss Low ffctiv output capacitanc Dsignd for inductiv loads Wll matchd for low scond harmonic whn drivn by Suprtx M30 Applications Mdical ultrasound bamforming Ultrasonic array focusing transmittr Pizolctric transducr wavform drivrs High spd arbitrary wavform gnrator Normally-on switchs Solid stat rlays Constant currnt sourcs Powr supply circuits Ordring Information Dvic TO-252 (D-PAK) N-Channl Dpltion-Mod Vrtical DMOS FET in Singl and Dual Options Packag Options 8-Lad DFN 5.00x5.00mm body 0.90mm hight (max).27mm pitch (dual pad) Gnral Dscription DN2625 Th Suprtx DN2625 is a low thrshold dpltion-mod (normally-on) transistor utilizing an advancd vrtical DMOS structur and Suprtx s wll-provn silicon-gat manufacturing procss. This combination producs a dvic with th powr handling capabilitis of bipolar transistors and with th high input impdanc and positiv tmpratur cofficint inhrnt in MOS dvics. Charactristic of all MOS structurs, this dvic is fr from thrmal runaway and thrmally-inducd scondary brakdown. Suprtx s vrtical DMOS FETs ar idally suitd to a wid rang of switching and amplifying applications whr high brakdown voltag, high input impdanc, low input capacitanc, and fast switching spds ar dsird. Th DN2625DK6-G contains two MOSFETs in an 8-lad, dual pad DFN packag. Th DN2625K6-G in th -lad QFN packag is not rcommndd for nw dsigns, but may continu to b purchasd for xisting dsigns. -Lad QFN* 5.00x5.00mm body.00mm hight (max).27mm pitch BX / BV DGX (OFF) (max) S (pulsd) ( = 0.9V) (min) DN2625 DN2625K-G DN2625DK6-G DN2625K6-G G indicats packag is RoHS compliant ( Grn ) * This packag obsolt. For singl MOSFETs us th TO-252 D-PAK (K), for dual MOSFETs us th 8-Lad DFN (K6) (dual pad). Pin Configurations DRAIN Absolut Maximum Ratings Paramtr Drain-to-sourc voltag Drain-to-gat voltag Valu 250V 250V Gat-to-sourc voltag ±20V Oprating and storag tmpratur Soldring tmpratur* -55 O C to +50 O C 300 O C Absolut Maximum Ratings ar thos valus byond which damag to th dvic may occur. Functional opration undr ths conditions is not implid. Continuous opration of th dvic at th absolut rating lvl may affct dvic rliability. All voltags ar rfrncd to dvic ground. * Distanc of.6mm from cas for 0 sconds. S G S2 G2 2 3 D Lad DFN (K6) (dual pad) (top viw) GATE GATE SOURCE 2 SOURCE 3 SOURCE SOURCE TO-252 D-PAK (K) 5 D D DRAIN DRAIN DRAIN 3 2 GATE DRAIN DRAIN DRAIN 0 SOURCE 9 SOURCE 8 SOURCE OBSOLETE -Lad QFN (K6) (top viw) This packag is not rcommndd for nw dsigns. Suprtx inc. 235 Bordaux Driv, Sunnyval, CA 9089 Tl:

2 Product Marking Packags may or may not includ th following marks: Si or Thrmal Charactristics Elctrical Charactristics (T A = 25O C unlss othrwis spcifid) Sym Paramtr Min Typ Max Units Conditions BX Drain-to-sourc brakdown voltag V = -2.5V, = 50µA BV DGX Drain-to-gat brakdown voltag V = -2.5V, = 50µA (OFF) Gat-to-sourc off voltag V = 5V, = 00µA Δ(OFF) Chang in (OFF) with tmpratur mv/ O C = 5V, = 00µA I GSS Gat body lakag currnt na = ±20V, = 0V (OFF) Packag (continuous) Drain-to-sourc lakag currnt (pulsd) R θja ( O C/W) = 250V, = -5.0V µa = 250V, = -5.0V, T A = 25 O C SS Saturatd drain-to-sourc currnt. - - A = 0V, = 5V S(PULSE) Pulsd drain-to-sourc currnt A = 0.9V, = 5V (with duty cycl of %) Static drain-to-sourc on-rsistanc Ω = 0V, =.0A Δ Chang in with tmpratur - -. %/ O C = 0V, = 200mA G FS Forward transconductanc mmho = 0V, = 50mA C ISS Input capacitanc C OSS Common sourc output capacitanc C RSS Rvrs transfr capacitanc t d(on) Turn-on dlay tim t r Ris tim t d(off) Turn-off dlay tim t f Fall tim pf ns = -2.5V, = 25V, f =.0MHz V DD = 25V, = 50mA, R GEN = Ω, = 0v to -0V V SD Diod forward voltag drop V = -2.5V, I SD = 50mA Q G Total gat charg Q GS Gat-to-sourc charg Q GD Gat-to-drain charg nc R θjc ( O C/W) D-PAK Lad DFN (dual pad) Nots: Si YYWW DN2625 LLLLLLL YY = Yar Sald WW = Wk Sald L = Lot Numbr = Grn Packaging -Lad QFN (Continuous) is limitd by max. T j. -layr, oz, 3xinch PCB, with 20-via for drain pad. -layr, oz, 3xinch PCB, with 2-via for drain pad. Junction to th DFN thrmal pad. 625D LLLLLL YYWW AAACCC L = Lot Numbr YY = Yar Sald WW = Wk Sald A = Assmblr ID C = Country of Origin = Grn Packaging DN2625 LLLLLL YYWW AAACCC TO-252 D-PAK (K) 8-Lad DFN (K6) (dual pad) -Lad QFN (K6) This packag is not rcommndd for nw dsigns. = 3.5A, = 00V, =.5V L = Lot Numbr YY = Yar Sald WW = Wk Sald A = Assmblr ID C = Country of Origin = Grn Packaging OBSOLETE R RM Suprtx inc. 235 Bordaux Driv, Sunnyval, CA 9089 Tl:

3 Switching Wavforms and Tst Circuit INPUT 0V -0V 0% 90% Puls Gnrator V DD R L OUTPUT t (ON) t (OFF) R GEN t d(on) t r t d(off) t f OUTPUT VDD 0V 0% 90% 90% 0% INPUT D.U.T. Typical Prformanc Curvs Output Charactristics (amps) = V =.5V =.0V = 0.5V = 0V = -0.5V = -.0V = -.5V = -V (volts) Saturation Charactristics = -2V = -.5V = -V = -0.5V = 0V = 0.5V = V =.5V = 2V Transfr Charactristics BX Variation With Tmpratur O C (amps) O C 25 O C BX (normalizd) = -2.5V = ma T j ( O C) Suprtx inc. 235 Bordaux Driv, Sunnyval, CA 9089 Tl:

4 Typical Prformanc Curvs (cont.) On-Rsistanc vs Drain Currnt Transconductanc vs Drain Currnt = V 3.5 = 0V -55 O C (ohms) G FS (Simns) O C 25 O C (OFF) and Variation With Tmpratur (OFF) (normalizd) = = V =A (normalizd) T j ( O C) Suprtx inc. 235 Bordaux Driv, Sunnyval, CA 9089 Tl:

5 3-Lad TO-252 D-PAK Packag Outlin (K) E b3 E A c2 L3 θ D H D 2 3 L L5 Not b2 b Front Viw Rar Viw Sid Viw L2 Gaug A Sating θ L L Not:. Although trminal locations ar shown, only 3 ar functional. Lad numbr 2 was rmovd. Dimnsion (inchs) Symbol A A b b2 b3 c2 D D E E H L L L2 L3 L L5 θ θ MIN * *.05 0 O 0 O NOM BSC REF BSC MAX * * O 5 O JEDEC Rgistration TO-252, Variation AA, Issu E, Jun 200. * This dimnsion is not spcifid in th JEDEC drawing. Drawings not to scal. Suprtx Doc. #: DSPD-3TO252K, Vrsion E0309. Suprtx inc. 235 Bordaux Driv, Sunnyval, CA 9089 Tl:

6 8-Lad DFN Packag Outlin (K6) 5.00x5.00mm body, 0.90mm hight (max),.27mm pitch (dual pad) K D K/2 8 8 E E2 E2 Not Not Not Top Viw Bottom Viw θ Not 3 A A b A3 Sating Not 2 L L Sid Viw Nots: A Pin idntifir must b locatd in th indx ara indicatd. Th Pin idntifir can b: a moldd mark/idntifir; an mbddd mtal markr; or a printd indicator. Dpnding on th mthod of manufacturing, a maximum of 0.5mm pullback (L) may b prsnt. Th innr tip of th lad may b ithr roundd or squar. Symbol A A A3 b D E E2 K L L θ Dimnsion (mm) MIN O NOM REF BSC REF MAX O Drawings not to scal Suprtx Doc. #: DSPD-8DFNK65x5P27, Vrsion A00209 Suprtx inc. 235 Bordaux Driv, Sunnyval, CA 9089 Tl:

7 -Lad QFN Packag Outlin (K6) 5.00x5.00mm body,.00mm hight (max),.27mm pitch A A E Top Viw Sid Viw Not θ D A3 Sating AA E2 Exposd Pad Bottom Viw OBSOLETE BB Pin DD CC b Not Nots:. A Pin idntifir must b locatd in th indx ara indicatd. Th Pin idntifir can b: a moldd mark/idntifir; an mbddd mtal markr; or a printd indicator. Symbol A A A3 b D E E2 AA BB CC DD θ MIN O Dimnsion NOM (mm) REF BSC MAX O Drawings not to scal. Suprtx Doc. #: DSPD-QFNK65X5P27, Vrsion B (Th packag drawing(s) in this data sht may not rflct th most currnt spcifications. For th latst packag outlin information go to Suprtx inc. dos not rcommnd th us of its products in lif support applications, and will not knowingly sll thm for us in such applications unlss it rcivs an adquat product liability indmnification insuranc agrmnt. Suprtx inc. dos not assum rsponsibility for us of dvics dscribd, and limits its liability to th rplacmnt of th dvics dtrmind dfctiv du to workmanship. No rsponsibility is assumd for possibl omissions and inaccuracis. Circuitry and spcifications ar subjct to chang without notic. For th latst product spcifications rfr to th Suprtx inc. (wbsit: http// 200 Suprtx inc. All rights rsrvd. Unauthorizd us or rproduction is prohibitd. Doc.# DSFP-DN2625 B Suprtx inc. 235 Bordaux Driv, Sunnyval, CA 9089 Tl: