DTD114GK V CEO I C R. 50V 500mA 10kW. Datasheet. NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Outline Parameter Value SMT3
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1 NPN 500mA 50V Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr Valu SMT3 V CEO I C R 50V 500mA 10kW Bas Emittr Collctor DTD114GK SOT-346 (SC-59) Faturs 1) Built-In Biasing Rsistors 2) Built-in bias rsistors nabl th configuration of an invrtr circuit without conncting xtrnal input rsistors (s innr circuit). 3) Th bias rsistors consist of thin-film rsistors with complt isolation to allow ngativ biasing of th input. Thy also hav th advantag of compltly liminating parasitic ffcts. 4) Complmntary PNP Typs :DTB114GK 5) Lad Fr/RoHS Compliant. Innr circuit Application Switching circuit, Invrtr circuit, Intrfac circuit, Drivr circuit Packaging spcifications Part No. Packag Packag siz Taping cod Rl siz DTD114GK SMT T Tap width Basic ordring unit (pcs) Marking 8 3,000 L24 1/ Rv.C
2 Absolut maximum ratings (Ta = 25 C) Paramtr Symbol Valus Unit Collctor-bas voltag Collctor-mittr voltag Emittr-bas voltag V CBO 50 V V CEO 50 V V EBO 5 V Collctor currnt I C 500 ma Powr dissipation P d *2 200 mw Junction tmpratur T j 150 C Rang of storag tmpratur T stg -55 to +150 C Elctrical charactristics(ta = 25 C) Paramtr Symbol Conditions Min. Typ. Max. Unit Collctor-bas brakdown voltag BV CBO I C = 50mA V Collctor-mittr brakdown voltag BV CEO I C = 1mA V Emittr-bas brakdown voltag BV EBO I E = 720mA V Collctor cut-off currnt I CBO V CB = 50V ma Emittr cut-off currnt I EBO V EB = 4V ma Collctor-mittr saturation voltag V CE(sat) I C / I B = 50mA / 2.5mA V DC currnt gain h FE V CE = 5V, I C = 50mA Emittr-bas rsistanc R kw Transition frquncy f T *1 V CE = 10V, I E = -5mA, f = 100MHz *1 Charactristics of built-in transistor *2 Each trminal mountd on a rfrnc footprint MHz 2/ Rv.C
3 Elctrical charactristic curvs(ta = 25 C) COLLECTOR CURRENT : Ic (ma) Fig.1 Groundd mittr propagation charactristics V CE =5V Ta=100ºC 25ºC -40ºC BASE TO EMITTER VOLTAGE : V BE (V) Fig.2 Groundd mittr output charactristics 0 I I = 4.5mA 4.0mA 5.0mA 3.5mA 3.0mA COLLECTOR TO EMITTER VOLTAGE : V CE (V) 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA Ta=25ºC 0A Fig.3 DC Currnt gain vs. Collctor Currnt Fig.4 Collctor-mittr saturation voltag vs. Collctor Currnt DC CURRENT GAIN : hfe COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) 3/ Rv.C
4 Dimnsions (Unit : mm) SMT3 D A c Q L1 Lp E E b x S A A3 l1 A H 1 A1 S b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] DIM MILIMETERS INCHES MIN MAX MIN MAX A A A b c D E HE L Lp Q x y MILIMETERS INCHES DIM MIN MAX MIN MAX b l Dimnsion in mm / inchs 4/ Rv.C
5 Notic Nots 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) Th information containd hrin is subjct to chang without notic. Bfor you us our Products, plas contact our sals rprsntativ and vrify th latst spcifications : Although ROHM is continuously working to improv product rliability and quality, smiconductors can brak down and malfunction du to various factors. Thrfor, in ordr to prvnt prsonal injury or fir arising from failur, plas tak safty masurs such as complying with th drating charactristics, implmnting rdundant and fir prvntion dsigns, and utilizing backups and fail-saf procdurs. ROHM shall hav no rsponsibility for any damags arising out of th us of our Poducts byond th rating spcifid by ROHM. Exampls of application circuits, circuit constants and any othr information containd hrin ar providd only to illustrat th standard usag and oprations of th Products. Th priphral conditions must b takn into account whn dsigning circuits for mass production. Th tchnical information spcifid hrin is intndd only to show th typical functions of and xampls of application circuits for th Products. ROHM dos not grant you, xplicitly or implicitly, any licns to us or xrcis intllctual proprty or othr rights hld by ROHM or any othr partis. ROHM shall hav no rsponsibility whatsovr for any disput arising out of th us of such tchnical information. Th Products ar intndd for us in gnral lctronic quipmnt (i.. AV/OA dvics, communication, consumr systms, gaming/ntrtainmnt sts) as wll as th applications indicatd in this documnt. Th Products spcifid in this documnt ar not dsignd to b radiation tolrant. For us of our Products in applications rquiring a high dgr of rliability (as xmplifid blow), plas contact and consult with a ROHM rprsntativ : transportation quipmnt (i.. cars, ships, trains), primary communication quipmnt, traffic lights, fir/crim prvntion, safty quipmnt, mdical systms, srvrs, solar clls, and powr transmission systms. Do not us our Products in applications rquiring xtrmly high rliability, such as arospac quipmnt, nuclar powr control systms, and submarin rpatrs. ROHM shall hav no rsponsibility for any damags or injury arising from non-complianc with th rcommndd usag conditions and spcifications containd hrin. ROHM has usd rasonabl car to nsur th accuracy of th information containd in this documnt. Howvr, ROHM dos not warrants that such information is rror-fr, and ROHM shall hav no rsponsibility for any damags arising from any inaccuracy or misprint of such information. Plas us th Products in accordanc with any applicabl nvironmntal laws and rgulations, such as th RoHS Dirctiv. For mor dtails, including RoHS compatibility, plas contact a ROHM sals offic. ROHM shall hav no rsponsibility for any damags or losss rsulting non-complianc with any applicabl laws or rgulations. Whn providing our Products and tchnologis containd in this documnt to othr countris, you must abid by th procdurs and provisions stipulatd in all applicabl xport laws and rgulations, including without limitation th US Export Administration Rgulations and th Forign Exchang and Forign Trad Act. 14) This documnt, in part or in whol, may not b rprintd or rproducd without prior consnt of ROHM. Thank you for your accssing to ROHM product informations. Mor dtail product informations and catalogs ar availabl, plas contact us. ROHM Customr Support Systm R1102A
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