LNA IN GND GND GND GND IF OUT+ IF OUT- 7. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
|
|
- Domenic Ellis
- 5 years ago
- Views:
Transcription
1 LOW NOISE AMPLIFIER/ RoHS Compliant & Pb-Fr Product Packag Styl: SOIC- Faturs Singl V to.v Powr Supply MHz to MHz Opration db Small Signal Gain.dB Cascadd Nois Figur.mA DC Currnt Consumption -dbm Input IP Applications UHF Digital and Analog Rcivrs Digital Communication Systms Sprad-Spctrum Communication Systms Commrcial and Consumr Systms Portabl Battry-Powrd Equipmnt Gnral Purpos Frquncy Convrsion IN GND GND GND GND IF OUT+ Product Dscription Functional Block Diagram Ordring Information IF OUT- 7 OUT NC VCC VCC RF IN- RF IN+ Th RF is a monolithic intgratd UHF rcivr front-nd. Th IC contains all of th rquird componnts to implmnt th RF functions of th rcivr xcpt for th passiv filtring and LO gnration. It contains an (low-nois amplifir), a scond RF amplifir, and a balancd mixr which can driv a singl-ndd or balancd load. Th output of th is mad availabl as a pin to prmit th insrtion of a bandpass filtr btwn th and th RF/Mixr sction. Th output is buffrd to prmit a wid rang of choics for th intrstag filtr without altring th VSWR or nois figur at th input and to provid high isolation from th LO to th input port. Th sction may b disabld to consrv powr. RF RF PCBA-L RF PCBA-H Low Nois Amplifir/Mixr Fully Assmbld Evaluation Board (MHz) Fully Assmbld Evaluation Board (MHz) GaAs HBT GaAs MESFET InGaP HBT Optimum Tchnology Matching Applid SiG BiCMOS Si BiCMOS SiG HBT GaAs phemt Si CMOS Si BJT GaN HEMT DS RF MICRO DEVICES, RFMD, Optimum Tchnology Matching, Enabling Wirlss Connctivity, PowrStar, POLARIS TOTAL RADIO and UltimatBlu ar tradmarks of RFMD, LLC. BLUETOOTH is a tradmark ownd by Blutooth SIG, Inc., U.S.A. and licnsd for us by RFMD. All othr trad nams, tradmarks and rgistrd tradmarks ar th proprty of thir rspctiv ownrs., RF Micro Dvics, Inc. support, contact RFMD at (+) -7-7 or sals-support@rfmd.com. of
2 Absolut Maximum Ratings Paramtr Rating Unit Caution! ESD snsitiv dvic. Supply Voltag -. to 7. V DC Input LO and RF Lvls + dbm Ambint Oprating Tmpratur - to + C Storag Tmpratur - to + C Paramtr (MHz) Spcification Min. Typ. Max. Excding any on or a combination of th Absolut Maximum Rating conditions may caus prmannt damag to th dvic. Extndd application of Absolut Maximum Rating conditions to th dvic may rduc dvic rliability. Spcifid typical prformanc or functional opration of th dvic undr Absolut Maximum Rating conditions is not implid. RoHS status basd on EUDirctiv//EC (at tim of this documnt rvision). Th information in this publication is blivd to b accurat and rliabl. Howvr, no rsponsibility is assumd by RF Micro Dvics, Inc. ("RFMD") for its us, nor for any infringmnt of patnts, or othr rights of third partis, rsulting from its us. No licns is grantd by implication or othrwis undr any patnt or patnt rights of RFMD. RFMD rsrvs th right to chang componnt circuitry, rcommndd application circuitry and spcifications at any tim without prior notic. Unit Condition T = C, V CC =V, RF=MHz, LO=dBm, Ovrall IF=MHz, Application Schmatic configuration RF Frquncy Rang to MHz IF Frquncy Rang DC to MHz Cascad Gain 7 db IF=MHz IF=MHz IF=MHz Cascad IP - dbm Rfrncd to th input Cascad Nois Figur. db Singl sidband, IF=MHz. Singl sidband, IF=MHz. Singl sidband, IF=MHz First Sction () Nois Figur. db Input VSWR.: Input IP -. dbm Gain db Rvrs Isolation db Output VSWR.: Scond Sction (RF Amp, Mixr, IF) Nois Figur. db Singl Sidband Input VSWR.: Input IP + dbm Convrsion Gain db Output Impdanc k Opn Collctor LO Input LO Lvl - to + dbm LO to RF Rjction db LO to IF Rjction db LO Input VSWR.: Powr Supply Voltag to. V Currnt Consumption ma V CC =V ma V CC =.V of support, contact RFMD at (+) -7-7 or sals-support@rfmd.com. DS
3 Paramtr (MHz) Spcification Min. Typ. Max. Unit Condition T= C, V CC =V, RF=MHz, Ovrall LO=dBm, IF=MHz, Application Schmatic configuration RF Frquncy Rang to MHz IF Frquncy Rang DC to MHz Cascad Gain db IF=MHz IF=MHz 7 IF=MHz Cascad IP -7 dbm Rfrncd to th input Cascad Nois Figur db Singl sidband, IF=MHz Singl sidband, IF=MHz. Singl sidband, IF=MHz First Sction () Nois Figur. db Input VSWR.: Input IP -. dbm Gain db Rvrs Isolation db Output VSWR.: Scond Sction (RF Amp, Mixr, IF) Nois Figur. db Singl Sidband Input VSWR.: Input IP + dbm Convrsion Gain db Output Impdanc k Opn Collctor LO Input LO Lvl - to + dbm LO to RF Rjction db LO to IF Rjction db LO Input VSWR.: DS support, contact RFMD at (+) -7-7 or sals-support@rfmd.com. of
4 Pin Function Dscription Intrfac Schmatic IN This pin is NOT intrnally DC-blockd. An xtrnal blocking capacitor must b providd if th pin is connctd to a dvic with a DC path. A valu of pf is rcommndd for MHz and pf for MHz. IN GND Ground connction. For bst prformanc, kp tracs physically short and connct immdiatly to ground plan. GND Sam as pin. GND Sam as pin. GND Sam as pin. IF OUT+ Balancd opn collctor output of th mixr. Extrnal bias nds to b supplid to this pin. This can b don with a rsistor to V CC (s application schmatic, MHz, Balancd Rsistor Output Matching ), with a balun (s application schmatic, MHz, Output Matching with Balun ) or whn usd in a singl-ndd configuration (s application schmatic, MHz, Singl-Endd Rsistiv Output Matching ). Whn using a rsistor to V CC th rsistor valu will st th output impdanc. Typical valus for this rsistor ar to k. A shunt inductor/capacitor rsonator to V CC is ndd to maintain propr DC voltag at th mixr. At low rsistor valus th rsonator may b omittd at th xpns of gain, output powr and IP. To obtain maximum gain and output powr a balun as shown in application schmatics MHz, Output Matching with Balun and MHz, Output Matching with Balun is rcommndd. Using both outputs and matching thm corrctly to a singl ndd load will rsult in a db gain improvmnt ovr th plain singl ndd configuration. 7 IF OUT- Sam as pin xcpt complmntary output. S pin. mixr LO input. This pin has an intrnal pull-up rsistor to V CC and is not DC-blockd. An xtrnal blocking capacitor must b providd if th pin is connctd to a dvic with a DC path. A valu of pf is rcommndd for MHz and pf for MHz. RF IN+ Balancd mixr RF Input port. This pin is NOT intrnally DC-blockd. An xtrnal blocking capacitor must b providd if th pin is connctd to a dvic with a DC path. A valu of pf is rcommndd for MHz and pf for MHz. Matching is rquird; s th applications schmatics. To minimiz th nois figur it is rcommndd to hav a bandpass filtr bfor this input. This will prvnt nois at th imag frquncy from bing convrtd to th IF. RF IN+ RF IN- Sam as pin xcpt complmntary input. S pin. VCC Supply voltag for th mixr bias circuits. VCC Supply Voltag for th only. A 7pF xtrnal bypass capacitor is rquird and an optional. F will b rquird if no othr low frquncy bypass capacitors ar narby. Th trac lngth btwn th pin and th bypass capacitors should b minimizd. Th ground sid of th bypass capacitors should connct immdiatly to ground plan. BIAS IF OUT+ IF OUT- RF IN- of support, contact RFMD at (+) -7-7 or sals-support@rfmd.com. DS
5 Pin Function Dscription Intrfac Schmatic NC No connction. OUT output. An xtrnal DC blocking capacitor is rquird whn this pin is connctd to a DC path. OUT.7. Packag Drawing MAX MIN DS support, contact RFMD at (+) -7-7 or sals-support@rfmd.com. of
6 Application Schmatic MHz, Output Matching with Balun I m a g RF IN IF O U T RF IN IF O U T T : T : pf V CC nf V CC 7 Application Schmatic MHz, Output Matching with Balun pf. nh pf pf nf 7 I m a g F i l t r F i l t r pf.7 nh Vcc pf nf Vcc pf nf of support, contact RFMD at (+) -7-7 or sals-support@rfmd.com. DS
7 Application Schmatic MHz, Balancd Rsistiv Output Matching I m a g R F IN L IF O U T IF O U T RF IN IF O U T L 7 V DD 7 L 7 7 Application Schmatic MHz, Singl-Endd Rsistiv Output Matching V DD 7 I m a g F i l t r F i l t r.7 nh.7 nh pf. F pf nf DS support, contact RFMD at (+) -7-7 or sals-support@rfmd.com. 7 of
8 Evaluation Board Schmatic Mixr Tund for MHz J IN C nf C nf J OUT J IF OUT T : C nf 7 Rv B P NC GND P- VCC C pf C nf C pf C7 nf C nf C pf L. nh VCC J IN J of support, contact RFMD at (+) -7-7 or sals-support@rfmd.com. DS
9 Evaluation Board Schmatic Mixr Tund for MHz J IN C nf C nf J OUT J IF OUT T : C nf 7 Rv B P NC GND P- VCC C pf C nf C pf C7 nf C nf L.7 nh VCC J IN J DS support, contact RFMD at (+) -7-7 or sals-support@rfmd.com. of
10 S (db) VSWR. S Vcc=.7V Vcc=V Vcc=.V Vcc=.V Vcc=.V Vcc=.V Frquncy (GHz).. GHz..... VSWR S Input VSWR Vcc=.7V Input VSWR Input VSWR Vcc=.V Input VSWR Vcc=.V Vcc=.7V Vcc=.V Vcc=.V MHz. Output VSWR Vcc=.7V Output VSWR Output VSWR Vcc=.V Output VSWR Vcc=.V Frquncy (GHz).. Swp Max GHz... S (db) Vcc=.7V Vcc=.V Vcc=.V S Frquncy (GHz). Vcc=.7V. Vcc=.V Vcc=.V.. S... GHz MHz.. MHz. Swp Max GHz Swp Min.GHz Swp Min.GHz of support, contact RFMD at (+) -7-7 or sals-support@rfmd.com. DS
11 GHZ LO Input... Vcc=.7V Vcc=.V Vcc=.V GHZ.. -. GHZ MHZ... GHZ -. - Swp Max GHz Swp Min.GHz -. IF Output.. Vcc=.7V Vcc=.V Vcc=.V Swp Max GHz -... MHZ Swp Min.GHz RF Input (singl ndd) Vcc=.7V Vcc=.V Vcc=.V GHZ Swp Max GHz -. MHZ Swp Min.GHz DS support, contact RFMD at (+) -7-7 or sals-support@rfmd.com. of
12 RoHS* Bannd Matrial Contnt RoHS Compliant: Ys Packag total wight in grams (g):.7 Complianc Dat Cod: Bill of Matrials Rvision: - Pb Fr Catgory: Bill of Matrials Parts Pr Million (PPM) Pb Cd Hg Cr VI PBB PBDE Di Molding Compound Lad Fram Di Attach Epoxy Wir Soldr Plating This RoHS bannd matrial contnt dclaration was prpard solly on information, including analytical data, providd to RFMD by its supplirs, and applis to th Bill of Matrials (BOM) rvision notd * DIRECTIVE //EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 7 January on th rstriction of th us of crtain hazardous substancs in lctrical and lctronic quipmnt of support, contact RFMD at (+) -7-7 or sals-support@rfmd.com. DS
RF2126 HIGH POWER LINEAR AMPLIFIER
RF16High Power Linear Amplifier RF16 HIGH POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Slug Features Single 3V to 6.0V Supply 1.3W Output Power 1dB Gain 45% Efficiency
More informationRF2436 TRANSMIT/RECEIVE SWITCH
Transmit/Receive Switch RF2436 TRANSMIT/RECEIVE SWITCH Package Style: SOT-5 Features Single Positive Power Supply Low Current Consumption db Insertion Loss at 900MHz 24dB Crosstalk Isolation at 900MHz
More informationRF2418 LOW CURRENT LNA/MIXER
LOW CURRENT LNA/MIXER RoHS Compliant & Pb-Free Product Package Style: SOIC-14 Features Single 3V to 6.V Power Supply High Dynamic Range Low Current Drain High LO Isolation LNA Power Down Mode for Large
More informationVCC GND RF IN. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
.GHz Low Noise Amplifier with Enable RF7G.GHz LOW NOISE AMPLIFIER WITH ENABLE Package Style: SOT Lead Features DC to >6GHz Operation.7V to.0v Single Supply High Input IP.dB Noise Figure at 00MHz db Gain
More informationRF1200 BROADBAND HIGH POWER SPDT SWITCH
BROADBAND HIGH POWER SPDT SWITCH Package Style: QFN, 6-pin, 2x2 Features Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage: 2.6V to 5.0V
More informationProduct Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
RECEIVE AGC AMPLIFIER Package Style: MSOP-8 Features Supports Basestation Applications -55dB to +51dB Gain Control Range at 85MHz Single 3V Power Supply IN+ 1 IN- 2 GND 3 8 VCC1 7 VCC2 6 OUT+ -2dBm Input
More informationIMP528 IMP528. High-Volt 220 V PP Driv. ive. Key Features. Applications. Block Diagram
POWER POWER MANAGEMENT MANAGEMENT High-Volt oltag E amp p Driv ivr 220 V PP Driv iv Th is an Elctroluminscnt (E) lamp drivr with th four E lamp driving functions on-chip. Ths ar th switch-mod powr supply,
More informationRF3375 GENERAL PURPOSE AMPLIFIER
Basestation Applications Broadband, Low-Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low-Power Applications High Reliability Applications RF3375General Purpose
More informationRFPA TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER
3 TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER Package Style: QFN, 16-Pin, 3 mm x 3 mm Features 0.5 W CW Output Power at 3.6 V 1 W CW Output Power at 5 V 32 db Small Signal Gain at 900 MHz
More informationVCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT
3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.4mm Features Single Power Supply 3.0V to 3.6V 24dB Minimum Gain Input and Output ed to 50 2400MHz to 2500MHz
More informationRF2044A GENERAL PURPOSE AMPLIFIER
GENERAL PURPOSE AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Micro-X Ceramic Features DC to >6000MHz Operation Internally matched Input and Output 18.5dB Small Signal Gain @ 2GHz 4.0dB Noise
More informationGND GND GND GND. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
Direct Quadrature Modulator RF2484 DIRECT QUADRATURE MODULATOR RoHS Compliant & Pb-Free Product Package Style: QFN, 16-pin, 4x4 Features Typical Carrier Suppression>35dBc, Sideband Suppression>35dBc over
More informationRF3394 GENERAL PURPOSE AMPLIFIER
Basestation pplications Broadband, Low-Noise Gain Blocks IF or RF Buffer mplifiers Driver Stage for Power mplifiers Final P for Low-Power pplications High Reliability pplications RF3394General Purpose
More informationI REF Q REF GND2 GND2 GND2 VCC1. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
Direct Quadrature Modulator RF480 DIRECT QUADRATURE MODULATOR RoHS Compliant & Pb-Free Product Package Style: SOIC-16 Features Typical Carrier Suppression>5dBc over temperature with highly linear operation
More informationSGM Ω, 300MHz Bandwidth, Dual, SPDT Analog Switch
GENERAL DESCRIPTION Th SGM4717 is a dual, bidirctional, singl-pol/ doubl-throw (SPDT) CMOS analog switch dsignd to oprat from a singl 1.8V to 5.5V supply. It faturs high-bandwidth (300MHz) and low on-rsistanc
More informationSGB-6433(Z) Vbias RFOUT
SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description RFMD s SGB-6433 is a high performance SiGe HBT MMIC amplifier
More informationDTA123E series V CC I C(MAX.) R 1 R 2. 50V 100mA 2.2k 2.2k. Datasheet. PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
DT123 sris PNP -100m -50V Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Paramtr V CC I C(MX.) R 1 R 2 Valu 50V 100m 2.2k 2.2k Faturs 1) Built-In Biasing Rsistors, R 1 = R 2 = 2.2k. Outlin
More informationRF3857 DUAL CHANNEL LNA WITH BYPASS MODE
DUAL CHANNEL LNA WITH BYPASS MODE Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm Features Low Noise and High Intercept Point Adjustable Bias Current Power Down Low Insertion Loss Bypass Feature 1.8V to 4V
More informationRF9986. Micro-Cell PCS Base Stations Portable Battery Powered Equipment
RF996 CDMA/TDMA/DCS900 PCS Systems PHS 500/WLAN 2400 Systems General Purpose Down Converter Micro-Cell PCS Base Stations Portable Battery Powered Equipment The RF996 is a monolithic integrated receiver
More informationEMA5 / UMA5N / FMA5A. V CC -50V -100mA 2.2kW 47kW I C(MAX.) R 1 R 2. Datasheet
M5 / UM5N / FM5 PNP -100m -50V Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Faturs Paramtr V CC -50V -100m 2.2kW 47kW I C(MX.) R 1 R 2 1) Built-In Biasing Rsistors. 2) Two DT123J
More informationEMD4 / UMD4N V CC I C(MAX.) R 1 R 2. 50V 100mA. 47kW. V CC -50V -100mA 10kW. Datasheet
NPN + PNP Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr Valu EMT6 UMT6 V CC I C(MAX.) R 1 R 2 50V 100mA 47kW 47kW (1) (2) (3) (6) (5) (4) EMD4 (SC-107C)
More informationRF2044 GENERAL PURPOSE AMPLIFIER
GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features DC to >6000MHz Operation Internally matched Input and Output 20dB Small Signal Gain 4.0dB Noise Figure
More informationVCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT
3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2x2.2x0.45mm Features Single Power Supply 3.0V to 3.6V 30dB Typical Gain, Input ed to 50 2.4GHz to 2.5GHz Frequency Range
More informationRF V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER
3.3V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER Package Style: SOT 5-Lead Features Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Single 2.7V to 5.0V Power Supply 0.4GHz to
More informationCGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier CGA-6618Z DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: E
Dual CATV 5MHz to 1MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-1Z is a high performance GaAs HBT MMIC amplifier.
More informationVCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT
V TO.6V,.4GHz TO.5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin,.mmx.mmx0.6mm Features Single Power Supply.0V to.6v 4.5dB Minimum Gain Input and Output ed to 50 400MHz to 500MHz Frequency Range
More informationDTD114GK V CEO I C R. 50V 500mA 10kW. Datasheet. NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Outline Parameter Value SMT3
NPN 500mA 50V Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr Valu SMT3 V CEO I C R 50V 500mA 10kW Bas Emittr Collctor DTD114GK SOT-346 (SC-59) Faturs 1) Built-In Biasing
More informationGain and Return Loss vs Frequency. s22. Frequency (GHz)
SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description RFMD s SBA4086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
More informationRF1136 BROADBAND LOW POWER SP3T SWITCH
BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 db PCS Band 0.30 db High Isolation:
More informationEMD3 / UMD3N / IMD3A V CC I C(MAX.) R 1 R 2. 50V 100mA. 10k. 10k. 50V 100mA. 10k. 10k. Datasheet
NPN + PNP Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr Valu MT6 UMT6 V CC I C(MX.) Paramtr V CC I C(MX.) 50V 100m 10k 10k Valu 50V
More informationNot For New Design FMS W GaAs phemt SPDT SWITCH. Product Description. Features. Applications
10W GaAs phemt SPDT Switch FMS2031-001 10W GaAs phemt SPDT SWITCH Package: 3 mm x 3 mm QFN Product Description The FMS2031-001 is a 10 W, Single-pole, Double-throw, (SPDT) GaAs phemt reflective antenna
More informationAmplifier Configuration
Dual CATV Broadband High Linearity SiGe HBT Amplifier CGA-33Z DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-33Z is a high performance Silicon Germanium
More informationSGA2386ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 2800 MHz >10dB 97 C/W
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration
More informationAmplifier Configuration
Push-Pull MHz to 1MHz High Linearity InGaP HBT Amplifier CGA-7718Z PUSH-PULL MHz to 1MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description RFMD s CGA-7718Z is a high performance InGaP
More information= 35 ma (Typ.) Frequency (GHz)
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier SGA-486(Z) DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-86 Product Description The SGA-486
More informationGain and Return Loss versus Frequency (w/ BiasTees) 25 C 25 C 25 C. Frequency (GHz)
SBB489Z 5MHz to 6MHz Cascadable Active Bias InGaP HBT MMIC Amplifier SBB489Z 5MHz to 6MHz CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description RFMD s SBB489Z is a high performance
More informationFrequency (GHz) 5000 MHz
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier SGA-86(Z) DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-86 Product Description The SGA-86
More informationRF5187. RoHS Compliant & Pb-Free Product Typical Applications. 2.14GHz UMTS Systems. PCS Communication Systems Digital Communication Systems
0 RF5187 LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications 2.14GHz UMTS Systems PCS Communication Systems Digital Communication Systems Commercial and Consumer Systems Product
More informationRF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment
RF233 AMPLIFIER Typical Applications Broadband, Low Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low Power Applications Broadband Test Equipment Product Description
More informationAME. Shunt Bandgap Voltage Reference. General Description. Functional Block Diagram. Features. Typical Application. Applications
Gnral Dscription Th is a micropowr 2-trminal band-gap voltag rgulator diod. It oprats ovr a 30µA to 20mA currnt rang. Each circuit is trimmd at wafr sort to provid a ±0.50% and ±0.80% initial tolranc.
More informationSpecification Min. Typ. Max.
High Power Reflective GaAs SP4T Switch FMS2016-005 HIGH POWER REFLECTIVE GaAs SP4T SWITCH Package: 3 mm x 3 mm QFN Product Description The FMS2016-005 is a low loss, high power, linear single-pole four-throw
More informationSGA4586Z DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER
DC to 4MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration
More informationSGA2363ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 5000 MHz >10dB
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier SGA233Z DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-33 Product Description The SGA233Z is a high performance SiGe HBT MMIC Amplifier. A Darlington
More informationSGA3363Z. = 35 ma (Typ.) Frequency (GHz) T L MHz >10dB 255 C/W
SGA3363Z DC to MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description The SGA3363Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters
More informationSGL0363Z. 5MHz to 2000MHz Low Noise Amplifier. Germanium. Simplified Device Schematic. Vpc. Narrow-band Matching Network. Gnd
5MHz to MHz Low Noise Amplifier Silicon Germanium 5MHz to MHz LOW NOISE AMPLIFIER SILICON GERMANIUM Package: SOT-363 Product Description RFMD s is a low power, low noise amplifier. It is designed for.7v
More informationProduct Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
GPS Low Noise Amplifier with Integrated Input/Output SAW Filters RF2818 GPS LOW NOISE AMPLIFIER WITH INTEGRATED INPUT/OUTPUT SAW FILTERS Package: Module, 3.0mmx2.5mmx1.0mm Features Compact Footprint: 3.0mmx2.5mmx1.0mm
More informationRF2162 3V 900MHz LINEAR AMPLIFIER
3V 900MHz LINEAR AMPLIFIER Package Style: QFN, 16-Pin, 4x4 Features Single 3V Supply 9dBm Linear Output Power 9dB Linear Gain 35% Linear Efficiency Onboard Power Down Mode 800MHz to 960MHz Operation Applications
More informationSBB MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK. Features. Product Description. Applications
50 to 6000 InGaP HBT Active Bias Gain Block SBB3000 50 to 6000 InGaP HBT ACTIVE BIAS GAIN BLOCK Package: Bare Die Product Description RFMD s SBB3000 is a high performance InGaP HBT MMIC amplifier utilizing
More informationRF V TO 4.2V, 2.4GHz FRONT-END MODULE
3.0V TO 4.2V, 2.4GHz FRONT-END MODULE Package Style: QFN, 20-Pin, 3.5mmx3.5mmx0.5mm Features TX Output Power: 22dBm TX Gain: 28dB RX Gain: 11.5dB RX NF: 2.5dB Integrated LNA With Bypass Mode Applications
More informationRF5633 SINGLE 5.0V, 3.3 TO 3.8GHZ LINEAR POWER AMPLIFIER
Single 5.0V, 3.3 to 3.8GHz Linear Power Amplifier RF5633 SINGLE 5.0V, 3.3 TO 3.8GHZ LINEAR POWER AMPLIFIER Package Style: QFN, 24-Pin, 4 mm x 4 mm x 0.9 mm Features High Gain; 34dB Supports Low Gain Mode
More information1A Low Dropout Voltage Regulator Fixed Output, Fast Response
A Low Dropout Voltag Rgulator Fixd Output, Fast Rspons SPX3940 FEATURES % Output Accuracy SPX3940A Guarantd.5A Pak Currnt Low Quiscnt Currnt Low Dropout Voltag of 280mV at A Extrmly Tight Load and Lin
More informationRF2126. RoHS Compliant & Pb-Free Product Typical Applications 2.5GHz ISM Band Applications
0 RF6 HIGH POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications.5GHz ISM Band Applications Commercial and Consumer Systems Digital Communication Systems Portable Battery-Powered
More informationUMH8N / IMH8A V CEO I C R 1. 50V 100mA 10k. Datasheet. Outline. Inner circuit
NPN 100m 50V Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr V CO I C Tr1 and Tr2 50V 100m 10k UMT6 UMH8N SOT-363 (SC-88) SMT6 IMH8 SOT-457 (SC-74) Faturs 1) Built-In
More informationSXA-3318B(Z) 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER. Product Description. Features. Applications
0MHz to 20MHz Balanced ½ W Medium Power GaAs HBT Amplifier SXA-331B(Z) 0MHz to 20MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description
More informationSGA7489Z DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
DC to 3MHz Silicon Germanium HBT Cascadable Gain Block SGA7489Z DC to 3MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-89 Product Description The SGA7489Z is a high performance SiGe HBT MMIC
More informationSGM8521/2/4 150kHz, 4.7µA, Rail-to-Rail I/O CMOS Operational Amplifiers
// PRODUCT DESCRIPTION Th (singl),sgm8 (dual) and SGM8 (quad) ar rail-to-rail input and output voltag fdback amplifirs offring low cost. Thy hav a wid input common-mod voltag rang and output voltag swing,
More informationSGA2463Z. Frequency (GHz) 18.0 dbm 1950MHz. 7.2 dbm 1950 MHz 255 C/W
SGA243Z DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-33 Product Description The SGA243Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters
More informationSGM8621/2/3/4 250µA, 3MHz, Rail-to-Rail I/O CMOS Operational Amplifiers
PRODUCT DESCRIPTION Th SGM86(singl), SGM86(dual), SGM86(singl with shutdown) and SGM864(quad) ar low nois, low voltag, and low powr oprational amplifirs, that can b dsignd into a wid rang of applications.
More informationSGM8631/2/3/4 470µA, 6MHz, Rail-to-Rail I/O CMOS Operational Amplifiers
PRODUCT DESCRIPTION Th SGM86(singl), SGM86(dual), SGM86(singl with shutdown) and SGM864(quad) ar low nois, low voltag, and low powr oprational amplifirs, that can b dsignd into a wid rang of applications.
More informationSGM721/2/3/4 970µA, 10MHz, Rail-to-Rail I/O CMOS Operational Amplifiers
PRODUCT DESCRIPTION Th SGM7 (singl), SGM7 (dual), SGM7 (singl with shutdown) and SGM74 (quad) ar low nois, low voltag, and low powr oprational amplifirs, that can b dsignd into a wid rang of applications.
More informationProduct Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
Basestation pplications Broadband, Low-Noise Gain Blocks IF or RF Buffer mplifiers Driver Stage for Power mplifiers Final P for Low-Power pplications High Reliability pplications RF3396General Purpose
More informationLNA In. Input Match. LNA Vref. LNA Sel. RX Switch. TX Switch GND. PA Vcc2 GND GND. PA Out. Product Description. GaAs HBT GaAs MESFET InGaP HBT
3.0V to 4.2V, ISM Band Transmit/Receive Module with Diversity Transfer Switch RFFM6904 3.0V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH Package: LGA, 32-pin, 8mm x 8mm x 1.2mm
More informationV S. RF Out / V S. Specification (V S =3V) Specification (V S =4V) Min. Typ. Max. Min. Typ. Max.
SGL-263(Z) 1MHz to 25MHz Silicon Germanium Cascadable Low Noise Amplifier SGL-263(Z) 1MHz to 25MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER MD Green, RoHS Compliant, Pb-Free (Z Part Number) Package:
More informationNOT FOR NEW DESIGNS SGA5386Z. Absolute Maximum Ratings MHz. Parameter Rating Unit. Typical Performance at Key Operating Frequencies
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration
More informationRF1226 BROADBAND MEDIUM POWER DIFFERENTIAL SPDT SWITCH
BROADBAND MEDIUM POWER DIFFERENTIAL SPDT SWITCH Package Style: QFN, 12-pin, 2.0 mm x 2.0 mm x 0.55 mm Features Broadband Performance Low Frequency to 3.5 GHz Very Low Insertion Loss 0.25 db Typ at 0.90
More informationRFVA1017 ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER
Analog Controlled Variable Gain Amplifier RFVA1017 ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mm x 7mm VCTRL 8 Features 1425MHz to 1550MHz Operation Gain = 27dB Typical Gain Adjustment Range
More informationRF V, SWITCH AND LNA FRONT END SOLUTION
3.3V, SWITCH AND LNA FRONT END SOLUTION Package Style: QFN, -pin, 2mmx2mmx0.5mm C_BT 9 BT GND 7 Features Single Supply Voltage 3.0V to.5v Integrated SP3T Switch and LNA With Bypass Typical gain is db and
More informationN-Channel 40-V (D-S) MOSFET
Si4456Y N-Channl 4-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.).38 at V GS = V 33 4 37.5 nc.45 at V GS = 4.5 V 3 FEATURES Halogn-fr According to IEC 6249-2-2 Availabl TrnchFET Gn
More informationProduct Description. GaAs HBT GaAs MESFET InGaP HBT
Direct Quadrature Modulator RFMD0014 DIRECT QUADRATURE MODULATOR Package: QFN, 24-Pin, 4mm x 4mm Features ACPR Performance: -70 dbc Typ. for 1-Carrier WCDMA Very High Linearity: +26 dbm OIP3 Very Low Noise
More informationRDA1005L DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50 MHZ TO 4000 MHZ, 6 BIT
Digital Controlled Variable Gain Amplifier 50 MHz to 4000 MHz, 6 Bit RDA1005L DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50 MHZ TO 4000 MHZ, 6 BIT Package: MCM, 32-Pin, 5.2 mm x 5.2 mm Features Broadband
More informationUS6H23 / IMH23 V CEO 20V V EBO 12V. 600mA R k. Datasheet. Outline Parameter Tr1 and Tr2 TUMT6 SMT6
NPN 600m 20V Digital Transistors (Bias Rsistor Built-in Transistors) For Muting. Datasht Outlin Paramtr Tr1 and Tr2 TUMT6 SMT6 V CO 20V V BO 12V I C 600m R US6H23 1 4.7k IMH23 SOT-457 (SC-74) Faturs 1)
More informationBi-Directional N-Channel 20-V (D-S) MOSFET
Bi-Dirctional N-Channl -V (D-S) MOSFET Si9EDB PRODUCT SUMMARY V SS (V) R SS(on) (Ω) I SS (A). at V GS =.5 V 7.6 at V GS = 3.7 V 6..3 at V GS =.5 V 5.. at V GS =. V 5.5 FEATURES TrnchFET Powr MOSFET Ultra-Low
More informationRClamp2451ZA. Ultra Small RailClamp 1-Line, 24V ESD Protection
- RailClamp Dscription RailClamp TVS diods ar ultra low capacitanc dvics dsignd to protct snsitiv lctronics from damag or latch-up du to ESD, EFT, and EOS. Thy ar dsignd for us on high spd ports in applications
More informationTypical Gmax, OIP3, 5V,270mA 42 OIP3. 30 P1dB Frequency (GHz)
Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description RFMD s SGA-9289 is a high performance
More informationRF V TO 4.0V, 915MHz TRANSMIT/RECEIVE MODULE
RF6693.1V to 4.V, 91MHz Transmit/Receive Module RF669 3.1V TO 4.V, 91MHz TRANSMIT/RECEIVE MODULE Package: LGA, 28-Pin,.mm x.mm ASW_RX BAL_IN 1 28 27 26 2 24 23 22 Features Tx Output Power: 3dBm NC 2 3
More informationRFDA0035 DIGITAL CONTROLLED IF DUAL VGA 5 BIT 1dB LSB CONTROL
Digital Controlled IF Dual VGA RFDA0035 DIGITAL CONTROLLED IF DUAL VGA 5 BIT 1dB LSB CONTROL Package: QFN 32-Pin, 5.0mmx5.0mm 32 31 29 OPB- A1 A0 IPA+ IPA- GNDA VCCA OPA+ OPA- 28 27 26 25 Features Dual
More informationPackage: H: TO-252 P: TO-220 S: TO-263. Output Voltage : Blank = Adj 12 = 1.2V 15 = 1.5V 18 = 1.8V 25 = 2.5V 33 = 3.3V 50 = 5.0V 3.3V/3A.
Faturs Advancd Powr 3-Trminal ustabl or Fixd.V,.5V,.8V,.5V, 3.3V or 5.V Output Maximum Dropout.4V at Full Load Currnt Fast Transint Rspons Built-in Thrmal Shutdown Output Currnt Limiting Good Nois Rjction
More informationSZM-5066Z 5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER
5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER Package Style: QFN, 40-Pin, 6mm x 6mm Features Single Supply Voltage 5.0V 8dB Typical Gain Across Band P OUT = 25dBm
More informationTypical IP3, P1dB, Gain. 850 MHz 1960 MHz 2140 MHz 2450 MHz
400 to ¼W Medium Power GaAs HBT Amplifier with Active Bias SXA-9(Z) 400 to ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description RFMD s SXA-9 amplifier is a high efficiency
More informationVCC1 GND IN GND LOP LON GND GND. Product Description. GaAs HBT GaAs MESFET InGaP HBT
Direct Quadrature Modulator 145MHz to 27MHz RFMD214 DIRECT QUADRATURE MODULATOR 145MHz TO 27MHz Package: QFN, 24-Pin, 4mm x 4mm VCC1 IN IP 24 23 22 21 2 19 Features ACPR Performance: -7dBc Typ. for 1-Carrier
More information2SA1579 / 2SA1514K. V CEO -120V -50mA I C. Datasheet. PNP -50mA -120V High-Voltage Amplifier Transistors. Outline
PNP -50mA 20V High-Voltag Amplifir Transistors Datasht Paramtr Valu V CEO 20V -50mA I C Outlin UMT3 SMT3 Collctor Bas Bas Emittr Emittr Collctor Faturs 1) High Brakdown Voltag (BV CEO = 20V) 2) Complmntary
More informationProduct Description. Ordering Information. GaAs MESFET Si BiCMOS
Digital Controlled Variable Gain Amplifier 1700MHz to 2400MHz RFDA2077 DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 1700MHz to 2400MHz Package: MCM 32-Pin, 7.0mmx7.0mm Features Dual Channel VGA Frequency
More informationRF V TO 5.0V, 3.3GHz TO 3.8GHz LINEAR POWER AMPLIFIER
3.0V to 5.0V, 3.3GHz to 3.8GHz Linear Power Amplifier RF5603 3.0V TO 5.0V, 3.3GHz TO 3.8GHz LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm Features High Gain; 32dB 2.5% EVM (RMS) at
More informationDATA GND VCC GND RF1 GND GND GND. Product Description. Ordering Information. Sample bag with 25 pieces 7 Sample reel with 100 pieces
Serial Controlled 75W Digital Step Attenuator 5MHz to 2000MHz, 6- Bit, LSB SERIAL CONTROLLED 75 DIGITAL STEP ATTENUATOR 5MHz TO 2000MHz, 6-BIT, Package: MCM, 24-Pin, 4.2mm x 4.2mm Features Frequency Range
More informationAbsolute Maximum Ratings Parameter Rating Unit Max Input Power, OFDM Modulated, 3:1 Load VSWR +39 dbm Max Input Power, 2:1 VSWR +41 dbm ESD HBM Rating
1W GaAs phemt SPDT Switch FMS231-1 1W GaAs phemt SPDT SWITCH Package: 3mmx3mm QFN Product Description The FMS231-1 is a 1W, Single-pole, Double-throw, (SPDT) GaAs phemt reflective antenna switch. The switch
More informationRF5623 SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER
Single 5.0V, 3.3 to 3.8 GHz Linear Power Amplifier SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm Features High Gain; 32dB 2.5% EVM (RMS) at 26dBm, 5.0V Integrated
More informationRF2456. Typical Applications CDMA/FM Cellular Systems Supports Dual-Mode AMPS/CDMA Supports Dual-Mode TACS/CDMA
RF45 CDMA/FM DOWNCONVERTER Typical Applications CDMA/FM Cellular Systems Supports Dual-Mode AMPS/CDMA Supports Dual-Mode TACS/CDMA General Purpose Downconverter Commercial and Consumer Systems Portable
More informationP-Channel 150-V (D-S) MOSFET
Si3437V P-Channl 50-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.) - 50 0.75 at V GS = - 0 V -.4 0.79 at V GS = - 6 V -.3 TSOP-6 Top Viw 8 nc FEATURES Halogn-fr According to IEC 649--
More informationSZA-5044(Z) 4.9GHz to 5.9GHz 5V POWER AMPLIFIER. Features. Product Description. Applications. Package: QFN, 4mmx4mm
4.9GHz to 5.9GHz 5V Power Amplifier 4.9GHz to 5.9GHz 5V POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description RFMD s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier
More informationRF5632 SINGLE 5.0V, 2.3 TO 2.7 GHZ LINEAR POWER AMPLIFIER
Single 5.0V, 2.3 to 2.7 GHz Linear Power Amplifier RF5632 SINGLE 5.0V, 2.3 TO 2.7 GHZ LINEAR POWER AMPLIFIER Package Style: QFN, 24-Pin, 4mmx4mmx0.9mm VBIAS VC1 24 23 22 21 20 VC2 19 Features 34dB Small
More informationRF V TO 4.2V, 2.4GHz FRONT END MODULE
3.V TO 4.2V, 2.4GHz FRONT END MODULE Package Style: QFN, 2-Pin, 3.5mmx3.5mmx.5mm TXCT GND VCC_BAIS VCC NC 15 14 13 12 11 Features TX Output Power: 22dBm RX Gain: 11.5dB RX NF: 2.5dB Integrated RF Front
More information3A High Current, Low Dropout Voltage Regulator
SPX29300/01/02/03 3 High Currnt, Low Dropout Voltag Rgulator djustabl & Fixd Output, Fast Rspons Tim FETURES djustabl Output Down To 1.25V 1% Output ccuracy Output Currnt of 3 Low Dropout Voltag of 450mV
More informationRF V TO 3.6V, 2.4GHz FRONT END MODULE
3.V TO 3.6V, 2.4GHz FRONT END MODULE Package Style: QFN, 2-Pin, 3.mmx3.mmx.mm NC VBAT VBAT NC 4 3 2 Features Tx Output Power=22dBm Integrated RF Front End Module with TX/RX switch, PA, filter, and DP2T
More informationRF2667. Typical Applications CDMA/FM Cellular Systems CDMA PCS Systems GSM/DCS Systems
RF66 RECEIVE AGC AND DEMODULATOR Typical Applications CDMA/FM Cellular Systems CDMA PCS Systems GSM/DCS Systems TDMA Systems Spread Spectrum Cordless Phones Wireless Local Loop Systems Product Description
More informationSimplified Device Schematic. Pin 18. Pin 8. Pin 16. Stage 1 Bias. Stage 2 Bias. Pin 10
7MHz to 2.7GHz 5V 1W Power Amplifier SZA-244(Z) 7MHz to 2.7GHz 5V 1W Power Amplifier Package: QFN, 4mm x 4mm Product Description RFMD s SZA-244 is a high efficiency class AB heterojunction bipolar transistor
More informationRF1 RF2 RF3 RF4. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS
BROADBAND HIGH POWER SP4T SWITCH Package Style: QFN, 12-pin, 2.5mmx2.5mm Features 2kV HBM ESD Protection on All Ports Low Frequency to >2.7GHz Operation Low Insertion Loss: 0.4dB at 1GHz Very High Isolation:
More informationGND GND GND. Product Description. Ordering Information. Sample bag with 25 pieces 7 Sample reel with 100 pieces. GaAs MESFET Si BiCMOS Si CMOS Si BJT
Temperature Compensating Attenuator TEMPERATURE COMPENSATING ATTENUATOR Package: QFN, 16-Pin,.9mm x 3mm x 3mm GND VDD GND GND 16 15 14 13 Features Patent Pending Circuit Architecture Broadband 5MHz to
More informationProduct Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS Si BJT. DRAFT DRAFT1 of
UPSTREAM CATV AMPLI- FIER UPSTREAM CATV AMPLIFIER Package: QFN, -Pin, 4mm x 4mm Features Single.V Supply Operation Low Power Consumption: 14mA Typical 6db Dynamic Range: -.5dBm To 61dBmV Output Excellent
More informationRF GHz ISM Band Applications Digital Communication Systems PCS Communication Systems
RF6.5GHz ISM Band Applications Digital Communication Systems PCS Communication Systems The RF6 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide
More information3A High Current, Low Dropout Voltage Regulator Adjustable, Fast Response Time
SPX29302 3 High Currnt, ow Dropout Voltag Rgulator djustabl, Fast Rspons Tim FTURS djustabl Output Down To 1.25V 1% Output ccuracy Output Currnt of 3 ow Dropout Voltag of 370mV @ 3 xtrmly Fast Transint
More information