P-Channel 150-V (D-S) MOSFET

Transcription

1 Si3437V P-Channl 50-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.) at V GS = - 0 V at V GS = - 6 V -.3 TSOP-6 Top Viw 8 nc FEATURES Halogn-fr According to IEC finition TrnchFET Powr MOSFET 00 % R g and UIS Tstd Compliant to RoHS irctiv 00/95/EC APPLICATIONS Activ Clamp Circuits in C/C Powr Supplis 6 S 3 mm G mm 5 4 Marking Cod AH XXX Part # Cod Ordring Information: Si3437V-T-E3 (Lad (Pb)-fr) Si3437V-T-GE3 (Lad (Pb)-fr and Halogn-fr) S Lot Traca b ility and at Cod G P-Channl MOSFET ABSOLUTE MAXIMUM RATINGS T A = 5 C, unlss othrwis notd Paramtr Symbol Limit Unit rain-sourc Voltag V S - 50 V Gat-Sourc Voltag V GS ± 0 T C = 5 C -.4 T Continuous rain Currnt (T J = 50 C) C = 70 C -. I T A = 5 C -. b,c T A = 70 C b,c A Pulsd rain Currnt I M - 5 T Continuous Sourc-rain iod Currnt C = 5 C -.6 I S T A = 5 C.6 b,c Avalanch Currnt I AS 5 L = 0. mh Singl-Puls Avalanch Enrgy E AS.5 mj T C = 5 C 3. T Maximum Powr issipation C = 70 C. P W T A = 5 C b,c T A = 70 C.5 b,c Oprating Junction and Storag Tmpratur Rang T J, T stg - 55 to 50 C THERMAL RESISTANCE RATINGS Paramtr Symbol Typical Maximum Unit Maximum Junction-to-Ambint b, d t 5 s R thja C/W Maximum Junction-to-Foot Stady Stat R thjf 3 39 Nots: a. T C = 5 C. b. Surfac Mountd on " x " FR4 board. c. t = 5 s. d. Maximum undr Stady Stat conditions is 0 C/W. ocumnt Numbr: S Rv. B, 04-May-09

2 Si3437V SPECIFICATIONS T J = 5 C, unlss othrwis notd Paramtr Symbol Tst Conditions Min. Typ. Max. Unit Static rain-sourc Brakdown Voltag V S V GS = 0 V, I = - 50 µa - 50 V V S Tmpratur Cofficint ΔV S /T J - 60 I = - 50 µa V GS(th) Tmpratur Cofficint ΔV GS(th) /T J 5.5 mv/ C Gat-Sourc Thrshold Voltag V GS(th) V S = V GS, I = - 50 µa V Gat-Sourc Lakag I GSS V S = 0 V, V GS = ± 0 V ± 00 na V S = - 50 V, V GS = 0 V - Zro Gat Voltag rain Currnt I SS V S = - 50 V, V GS = 0 V, T J = 55 C - 0 µa On-Stat rain Currnt a I (on) V S - 0 V, V GS = - 0 V - 3 A rain-sourc On-Stat Rsistanc a V R GS = - 0 V, I = -.4 A 0.75 S(on) V GS = - 6 V, I = - A Ω Forward Transconductanc a g fs V S = - 0 V, I = -.4 A 4.5 S ynamic b Input Capacitanc C iss 50 Output Capacitanc C oss V S = - 50 V, V GS = 0 V, f = MHz 30 pf Rvrs Transfr Capacitanc C rss V S = - 75 V, V GS = - 0 V, I = - A. 9 Total Gat Charg Q g 8 nc Gat-Sourc Charg Q gs V S = - 75 V, V GS = - 6 V, I = - A. Gat-rain Charg Q gd 3.9 Gat Rsistanc R g f = MHz Ω Turn-On lay Tim t d(on) 9 5 Ris Tim t r V = - 75 V, R L = 75 Ω 8 Turn-Off laytim t d(off) I - A, V GEN = - 0 V, R g = Ω 8 4 Fall Tim t f 8 Turn-On lay Tim t d(on) 4 ns Ris Tim t r V = - 75 V, R L = 75 Ω 9 44 Turn-Off laytim t d(off) I - A, V GEN = - 6 V, R g = Ω 3 35 Fall Tim t f 4 rain-sourc Body iod Charactristics Continous Sourc-rain iod Currnt I S T C = 5 C -.4 Puls iod Forward Currnt I SM - 5 A Body iod Voltag V S I S = - A, V GS = 0 V V Body iod Rvrs Rcovry Tim t rr ns Body iod Rvrs Rcovry Charg Q rr 0 80 nc I F = -. A, di/dt = 00 A/µs, T J = 5 C Rvrs Rcovry Fall Tim t a 35 ns Rvrs Rcovry Ris Tim t b 5 Nots: a. Puls tst; puls width 300 µs, duty cycl %. b. Guarantd by dsign, not subjct to production tsting. Strsss byond thos listd undr Absolut Maximum Ratings may caus prmannt damag to th dvic. Ths ar strss ratings only, and functional opration of th dvic at ths or any othr conditions byond thos indicatd in th oprational sctions of th spcifications is not implid. Exposur to absolut maximum rating conditions for xtndd priods may affct dvic rliability. ocumnt Numbr: S Rv. B, 04-May-09

3 Si3437V TYPICAL CHARACTERISTICS 5 C, unlss othrwis notd V GS = 0 V thru 6 V. rain Currnt (A) 4 5 V rain Currnt 0.9 I - I V S - rain-to-sourc Voltag (V) Output Charactristics T C = 5 C - 55 C V GS - Gat-to-Sourc Voltag (V) Transfr Charactristics.4 - On-Rsistanc (Ω) S(on) V GS = 6 V V GS = 0 V R I - rain Currnt (A) On-Rsistanc vs. rain Currnt and Gat Voltag V S - rain-to-sourc Voltag (V) Capacitanc 0 I = A Gat-to-Sourc Voltag (V) - (A) 5 C 750 Capacitanc (pf) - C C iss 50 C oss C rss.4 I =. A V S = 50 V V S = 75 V V S = 00 V R S(on ) - On -Rsistanc (Normalizd).0.6. V GS = 0 V V GS = 6 V V G S Q g - Total Gat Charg (nc) Gat Charg T J - Junction Tmpratur ( C) On-Rsistanc vs. Junction Tmpratur ocumnt Numbr: S Rv. B, 04-May-09 3

4 i Si3437V TYPICAL CHARACTERISTICS 5 C, unlss othrwis notd 0 5 I =. A - Sourc Currnt (A ) IS 0. T = 50 C J T = 5 C J - rain-to-sourc (Ω) S(on) C R C V S - Sourc-to-rain Voltag (V) Sourc-rain iod Forward Voltag VGS - Gat-to-Sourc Voltag (V) On-Rsistanc vs. Gat-to-Sourc Tmpratur a n c ( V ) V GS(th) - V a r I = 50 µa I = 5 ma (W) Powr T J - Tmpratur ( C) Thrshold Voltag Tim (s) Singl Puls Powr, Junction-to-Ambint 0 Limitd by R S(on)* I - rain Currnt (A) T A = 5 C Singl Puls ms 0 ms 00 ms s 0 s C V S - rain-to-sourc Voltag (V) * V GS minimum V GS at which R S(on) is spcifid Saf Oprating Ara, Junction-to-Ambint 4 ocumnt Numbr: S Rv. B, 04-May-09

5 Si3437V MOSFET TYPICAL CHARACTERISTICS 5 C, unlss othrwis notd.6.3 (W) Powr T C - Cas Tmpratur ( C) Currnt rating* ) P o w r ( W.4.6 Powr (W) T C - Cas Tmpratur ( C) T A - Ambint Tmpratur ( C) Powr, Junction-to-Foot Powr rating, Junction-to-Ambint * Th powr dissipation P is basd on T J(max) = 50 C, using junction-to-cas thrmal rsistanc, and is mor usful in sttling th uppr dissipation limit for cass whr additional hatsinking is usd. It is usd to dtrmin th currnt rating, whn this rating falls blow th packag limit. ocumnt Numbr: S Rv. B, 04-May-09 5

6 t Si3437V TYPICAL CHARACTERISTICS 5 C, unlss othrwis notd n s n T d a l i f f t i i uty Cycl = 0.5 a r c n v p c m l I d E m a r z h 0. N o r m a T l i f f t i i t Nots: P M 0-4 t t t. uty Cycl, = t. Pr Unit Bas = R thja = 75 C 3. T JM T = P M Z (t) thja Singl Puls 4. Surfac Mountd Squar Wav Puls uration (s) Normalizd Thrmal Transint Impdanc, Junction-to-Ambint uty Cycl = 0.5 n s n a r T c n a d v p c m l I d E m a r N o r m a T z h Singl Puls Squar Wav Puls uration (s) Normalizd Thrmal Transint Impdanc, Junction-to-Foot 0 - maintains worldwid manufacturing capability. Products may b manufacturd at on of svral qualifid locations. Rliability data for Silicon Tchnology and Packag Rliability rprsnt a composit of all qualifid locations. For rlatd documnts such as packag/tap drawings, part marking, and rliability data, s /ppg? ocumnt Numbr: S Rv. B, 04-May-09

7 Packag Information TSOP: 5/6 LEA JEEC Part Numbr: MO-93C E E E E 3 3 -B- -B- b 0.5 M C B A b 0.5 M C B A 5-LEA TSOP 6-LEA TSOP -A- R 4x 0.7 Rf c A A R L Gaug Plan 8 C -C- A Sating Plan 4x (L ) L Sating Plan MILLIMETERS INCHES im Min Nom Max Min Nom Max A A A b c E E BSC 374 BSC L L 0 Rf 4 Rf L 0.5 BSC 0 BSC R Nom 7 Nom ECN: C Rv. I, 8-c-06 WG: 5540 ocumnt Numbr: c-06

8 AN83 Mounting LITTLE FOOT TSOP-6 Powr MOSFETs Surfac mountd powr MOSFET packaging has bn basd on intgratd circuit and small signal packags. Thos packags hav bn modifid to provid th improvmnts in hat transfr rquird by powr MOSFETs. Ladfram matrials and dsign, molding compounds, and di attach matrials hav bn changd. What has rmaind th sam is th footprint of th packags. Th basis of th pad dsign for surfac mountd powr MOSFET is th basic footprint for th packag. For th TSOP-6 packag outlin drawing s and s for th minimum pad footprint. In convrting th footprint to th pad st for a powr MOSFET, you must rmmbr that not only do you want to mak lctrical connction to th packag, but you must mad thrmal connction and provid a mans to draw hat from th packag, and mov it away from th packag. In th cas of th TSOP-6 packag, th lctrical connctions ar vry simpl. Pins,, 5, and 6 ar th drain of th MOSFET and ar connctd togthr. For a small signal dvic or intgratd circuit, typical connctions would b mad with tracs that ar 0 inchs wid. Sinc th drain pins srv th additional function of providing th thrmal connction to th packag, this lvl of connction is inadquat. Th total cross sction of th coppr may b adquat to carry th currnt rquird for th application, but it prsnts a larg thrmal impdanc. Also, hat sprads in a circular fashion from th hat sourc. In this cas th drain pins ar th hat sourcs whn looking at hat sprad on th PC board. Sinc surfac mountd packags ar small, and rflow soldring is th most common form of soldring for surfac mount componnts, thrmal connctions from th planar coppr to th pads hav not bn usd. Evn if additional planar coppr ara is usd, thr should b no problms in th soldring procss. Th actual soldr connctions ar dfind by th soldr mask opnings. By combining th basic footprint with th coppr plan on th drain pins, th soldr mask gnration occurs automatically. A final itm to kp in mind is th width of th powr tracs. Th absolut minimum powr trac width must b dtrmind by th amount of currnt it has to carry. For thrmal rasons, this minimum width should b at last 0 inchs. Th us of wid tracs connctd to th drain plan provids a low impdanc path for hat to mov away from th dvic. REFLOW SOLERING surfac-mount packags mt soldr rflow rliability rquirmnts. vics ar subjctd to soldr rflow as a tst prconditioning and ar thn rliability-tstd using tmpratur cycl, bias humidity, HAST, or prssur pot. Th soldr rflow tmpratur profil usd, and th tmpraturs and tim duration, ar shown in Figurs and 3. Figur shows th coppr sprading rcommndd footprint for th TSOP-6 packag. This pattrn shows th starting point for utilizing th board ara availabl for th hat sprading coppr. To crat this pattrn, a plan of coppr ovrlays th basic pattrn on pins,,5, and 6. Th coppr plan conncts th drain pins lctrically, but mor importantly provids planar coppr to draw hat from th drain lads and start th procss of sprading th hat so it can b dissipatd into th ambint air. Notic that th planar coppr is shapd lik a T to mov hat away from th drain lads in all dirctions. This pattrn uss all th availabl ara undrnath th body for this purpos Ramp-Up Rat 55 5 C Tmpratur Abov 80 C +6 C/Scond Maximum 0 Sconds Maximum Sconds 6 5 Maximum Tmpratur Tim at Maximum Tmpratur 40 +5/ 0 C 0 40 Sconds Ramp-own Rat +6 C/Scond Maximum FIGURE. Rcommndd Coppr Sprading Footprint FIGURE. Soldr Rflow Tmpratur Profil ocumnt Numbr: Fb-04

9 AN C 0 s (max) 4 C/s (max) 3-6 C/s (max) C 7 C 3 C/s (max) 60-0 s (min) Pr-Hating Zon 60 s (max) Rflow Zon Maximum pak tmpratur at 40 C is allowd. FIGURE 3. Soldr Rflow Tmpratur and Tim urations THERMAL PERFORMANCE A basic masur of a dvic s thrmal prformanc is th junction-to-cas thrmal rsistanc, R jc, or th junction-to-foot thrmal rsistanc, R jf. This paramtr is masurd for th dvic mountd to an infinit hat sink and is thrfor a charactrization of th dvic only, in othr words, indpndnt of th proprtis of th objct to which th dvic is mountd. Tabl shows th thrmal prformanc of th TSOP-6. TABLE. Equivalnt Stady Stat Prformanc TSOP-6 Thrmal Rsistanc R jf 30 C/W r S(on) On-Rsiistanc (Normalizd) On-Rsistanc vs. Junction Tmpratur V GS = 4.5 V I = 6. A SYSTEM AN ELECTRICAL IMPACT OF TSOP-6 In any dsign, on must tak into account th chang in MOSFET r S(on) with tmpratur (Figur 4) T J Junction Tmpratur ( C) FIGURE 4. Si3434V ocumnt Numbr: Fb-04

10 Application Not 86 RECOMMENE MINIMUM PAS FOR TSOP-6 99 (.50) APPLICATION NOTE 8 (99) 0.9 (3.03) 64 (.66) 39 (.00) 0 (0.508) 9 (0.493) Rcommndd Minimum Pads imnsions in Inchs/(mm) Rturn to Indx Rturn to Indx ocumnt Numbr: Rvision: -Jan-08

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