N-Channel 100 V (D-S) 175 C MOSFET

Transcription

1 N-Channl V (D-S) 75 C MOSFET SUMN-9 PRODUCT SUMMRY V DS (V) R DS(on) (Ω) ().95 at V GS = V a FETURES TrnchFET Powr MOSFET Nw Packag with Low Thrmal Rsistanc % R g Tstd D TO-263 G G D S Top Viw Ordring Information: SUMN-9-E3 (Lad (Pb)-fr) S N-Channl MOSFET BSOLUTE MXIMUM RTINGS T C = 25 C, unlss othrwis notd Paramtr Symbol Limit Unit Drain-Sourc Voltag V DS Gat-Sourc Voltag V GS ± 2 V T C = 25 C a Continuous Drain Currnt (T J = 75 C) T C = 25 C 87 a Pulsd Drain Currnt M 44 valanch Currnt I R 75 Rptitiv valanch Enrgy b L =. mh E R 28 mj Maximum Powr Dissipation b T C = 25 C 375 c P D T = 25 C 3.75 W Oprating Junction and Storag Tmpratur Rang T J, T stg - 55 to 75 C THERML RESISTNCE RTINGS Paramtr Symbol Limit Unit Junction-to-mbint PCB Mount (TO-263) d R thj 4 Junction-to-Cas (Drain) R thjc.4 C/W Nots: a. Packag limitd. b. Duty cycl %. c. S SO curv for voltag drating. d. Whn mountd on " squar PCB (FR-4 matrial). Documnt Numbr: 7677 S-644-Rv. G, 22-Mar-

2 SUMN-9 SPECIFICTIONS T J = 25 C, unlss othrwis notd Paramtr Symbol Tst Conditions Min. Typ. Max. Unit Static Drain-Sourc Brakdown Voltag V DS V DS = V, = 25 µ V Gat-Thrshold Voltag V GS(th) V DS = V GS, = 25 µ 2 4 Gat-Body Lakag I GSS V DS = V, V GS = ± 2 V ± n Zro Gat Voltag Drain Currnt SS V DS = V, V GS = V, T J = 25 C 5 µ V DS = V, V GS = V V DS = V, V GS = V, T J = 75 C 25 On-Stat Drain Currnt a (on) V DS 5 V, V GS = V 2 Drain-Sourc On-Stat Rsistanc a R DS(on) VDS = 5 V, VGS = V, ID = 85 V GS = V, = 3, T J = 25 C.7 Ω V GS = V, = V GS = V, = 3, T J = 75 C.25 Forward Transconductanc a g fs V DS = 5 V, = 3 25 S Dynamic b Input Capacitanc C iss 67 Output Capacitanc C oss V GS = V, V DS = 25 V, f = MHz 75 pf Rvrs Transfr Capacitanc C rss 28 Total Gat Charg c Q g 6 Gat-Sourc Charg c Q gs 24 nc Gat-Drain Charg c Q gd 24 Gat Rsistanc R g. 6.2 Ω Turn-On Dlay Tim c t d(on) 2 3 Ris Tim c t r V DD = 5 V, R L =.6 Ω 25 2 Turn-Off Dlay Tim c t d(off) 85, V GEN = V, R g = 2.5 Ω ns Fall Tim c t f 3 95 Sourc-Drain Diod Ratings and Charactristics T C = 25 C b Continuous Currnt I S Pulsd Currnt I SM 24 Forward Voltag a V SD I F = 85, V GS = V..5 V Rvrs Rcovry Tim t rr 7 4 ns Pak Rvrs Rcovry Charg I RM(REC) I F = 5, di/dt = /µs 5.5 Rvrs Rcovry Charg Q rr.9.35 µc Nots: a. Puls tst; puls width 3 µs, duty cycl 2 %. b. Guarantd by dsign, not subjct to production tsting. c. Indpndnt of oprating tmpratur. Strsss byond thos listd undr bsolut Maximum Ratings may caus prmannt damag to th dvic. Ths ar strss ratings only, and functional opration of th dvic at ths or any othr conditions byond thos indicatd in th oprational sctions of th spcifications is not implid. Exposur to absolut maximum rating conditions for xtndd priods may affct dvic rliability. 2 Documnt Numbr: 7677 S-644-Rv. G, 22-Mar-

3 SUMN-9 TYPICL CHRCTERISTICS 25 C, unlss othrwis notd 25 V GS = V thru 7 V 2 6 V Drain Currnt ( ) 5 - Drain Currnt ( ) 5 5 V T C = 25 C C - 55 C 4 V V DS - Drain-to-Sourc Voltag Output Charactristics VGS - Gat-to-Sourc Voltag (V) Transfr Charactristics 25.5 T C = - 55 C - Transconductanc (S ) g f s C 25 C - On-Rsistanc (Ω) R DS(on ) V GS = V Drain Currnt () Transconductanc Drain Currnt () On-Rsistanc vs. Drain Currnt 2 V DS = 5 V = 85 C - Capacitanc (pf ) C iss - Gat-to-Sourc Voltag (V ) V G S 4 Crss C oss V DS - Drain-to-Sourc Voltag (V) Capacitanc Q g - Total Gat Charg (nc) Gat Charg Documnt Numbr: 7677 S-644-Rv. G, 22-Mar- 3

4 SUMN-9 TYPICL CHRCTERISTICS 25 C, unlss othrwis notd V GS = V = 3 R DS(on) - On-Rsistanc (Normalizd) I S - S o u r c C u r r n t ( ) T J = 5 C T J = 25 C T J - Junction Tmpratur ( C) On-Rsistanc vs. Junction Tmpratur VSD - Sourc-to-Drain Voltag (V) Sourc-Drain Diod Forward Voltag 25 2 = m I V () at T = 25 C 5 () a v I V () at T = 5 C (V) V (BR)DSS t in (s) valanch Currnt vs. Tim T J - Junction Tmpratur ( C) Drain Sourc Brakdown vs. Junction Tmpratur 4 Documnt Numbr: 7677 S-644-Rv. G, 22-Mar-

5 l i t i f f i SUMN-9 THERML RTINGS 2 - Drain Currnt ( ) Drain Currnt ( ) Limitd by R DS(on)* µs µs ms ms ms, DC 2 T C = 25 C Singl Puls T C - mbint Tmpratur ( C) Maximum valanch and Drain Currnt vs. Cas Tmpratur.. V DS - Drain-to-Sourc Voltag (V) * V GS minimum V GS at which R DS(on) is spcifid Saf Oprating ra 2 n N o r m a d E T s t T h r m a l I m p d a n c n a r v c z. Duty Cycl = Singl Puls Squar Wav Puls Duration (s) Normalizd Thrmal Transint Impdanc, Junction-to-Cas maintains worldwid manufacturing capability. Products may b manufacturd at on of svral qualifid locations. Rliability data for Silicon Tchnology and Packag Rliability rprsnt a composit of all qualifid locations. For rlatd documnts such as packag/tap drawings, part marking, and rliability data, s /ppg?7677. Documnt Numbr: 7677 S-644-Rv. G, 22-Mar- 5

6 TO-263 (D 2 PK): 3-LED Packag Information -B- E -- L2 c2 D4 D2 D3 E K 6 E3 D L3 L D b2 b Dtail c E2. M M 2 PL - 5 L L4 DETIL (ROTTED 9 ) M b b SECTION - Nots. Plan B includs maximum faturs of hat sink tab and plastic. 2. No mor than 25 % of L can fall abov sating plan by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lad is for SUB, SYB. Thick lad is for SUM, SYM, SQM. 5. Us inchs as th primary masurmnt. 6. This fatur is for thick lad. c c c* INCHES MILLIMETERS DIM. MIN. MX. MIN. MX b b b Thin lad Thick lad c Thin lad Thick lad c D D D D D E E E E BSC 2.54 BSC K L L L L L4. BSC.254 BSC M ECN: T3-77-Rv. K, 3-Sp-3 DWG: 5843 Rvison: 3-Sp-3 Documnt Numbr: 798 THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9

7 N826 RECOMMENDED MINIMUM PDS FOR D 2 PK: 3-Lad.42 (.668).635 (6.29).355 (9.7).45 (3.683).35 (3.429).2 (5.8).5 (.257) Rcommndd Minimum Pads Dimnsions in Inchs/(mm) Rturn to Indx Documnt Numbr: pr-5

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