AP85T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.

Transcription

1 P85T3GH/J RoHS-compliant Product dvancd Powr N-CHNNEL ENHNCEMENT MODE Elctronics Corp. POWER MOSFET Low Gat Charg D BV DSS 3V Simpl Driv Rquirmnt R DS(ON) 6mΩ Fast Switching G I D 75 S Dscription Th TO-252 packag is widly prfrrd for all commrcial-industrial surfac mount applications and suitd for low voltag applications such as DC/DC convrtrs. Th through-hol vrsion (P85T3GJ) is availabl for low-profil applications. G D S TO-252(H) G D S TO-251(J) bsolut Maximum Ratings V DS V GS Symbol Paramtr Rating Units I C =25 I C =1 I DM Drain-Sourc Voltag 3 Gat-Sourc Voltag +2 Continuous Drain Currnt, V 1V 75 Continuous Drain Currnt, V 1V 55 Pulsd Drain Currnt 1 35 P C =25 Total Powr Dissipation 17 Linar Drating Factor.7 T STG Storag Tmpratur Rang -55 to 175 T J Oprating Junction Tmpratur Rang -55 to 175 V V W W/ Thrmal Data Symbol Paramtr Valu Units Rthj-c Maximum Thrmal Rsistanc, Junction-cas 1.4 /W Rthj-a Maximum Thrmal Rsistanc, Junction-ambint 11 /W Data & spcifications subjct to chang without notic

2 P85T3GH/J Elctrical j =25 o C(unlss othrwis spcifid) Symbol Paramtr Tst Conditions Min. Typ. Max. Units BV DSS Drain-Sourc Brakdown Voltag V GS =V, I D =25u V ΔBV DSS /ΔT j Brakdown Voltag Tmpratur Cofficint Rfrnc to 25, I D =1m V/ R DS(ON) Static Drain-Sourc On-Rsistanc 2 V GS =1V, I D = mω V GS =4.5V, I D = mω V GS(th) Gat Thrshold Voltag V DS =V GS, I D =25u 1-3 V g fs Forward Transconductanc V DS =1V, I D = S I DSS Drain-Sourc Lakag Currnt V DS =3V, V GS =V u Drain-Sourc Lakag Currnt (T j =175 o C) V DS =24V, V GS =V u I GSS Gat-Sourc Lakag V GS =+2V n Q g Total Gat Charg 2 I D = nc Q gs Gat-Sourc Charg V DS =24V - 8 nc Q gd Gat-Drain ("Millr") Charg V GS =4.5V - 24 nc Q oss Output Charg V DD =15V,V GS =V nc t d(on) Turn-on Dlay Tim 2 V DS =15V ns t r Ris Tim I D = ns t d(off) Turn-off Dlay Tim R G =3.3Ω,V GS =1V ns t f Fall Tim R D =.5Ω ns C iss Input Capacitanc V GS =V pf C oss Output Capacitanc V DS =25V pf C rss Rvrs Transfr Capacitanc f=1.mhz pf Sourc-Drain Diod Symbol Paramtr Tst Conditions Min. Typ. Max. Units V SD Forward On Voltag 2 I S =45, V GS =V V t rr Rvrs Rcovry Tim 2 I S =3, V GS =V, ns Q rr Rvrs Rcovry Charg di/dt=1/µs nc Nots: 1.Puls width limitd by Max. junction tmpratur. 2.Puls width <3us, duty cycl <2%. THIS PRODUCT IS SENSITIVE TO ELECTROSTTIC DISCHRGE, PLESE HNDLE WITH CUTION. USE OF THIS PRODUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZED. PEC DOES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY NY LICENSE UNDER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS. PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PRODUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR DESIGN. 2

3 P85T3GH/J 3 15 I D, Drain Currnt () T C =25 o C 1V 7.V 6.V 4.5V I D, Drain Currnt () 1 5 T C = 175 o C 1V 7.V 6.V 4.5V V G =4.V 5 V G =4.V V DS, Drain-to-Sourc Voltag (V) V DS, Drain-to-Sourc Voltag (V) Fig 1. Typical Output Charactristics Fig 2. Typical Output Charactristics I D =3 T c =25 2. I D =45 V G =1V R DS(ON) (mω) 9 7 Normalizd R DS(ON) V GS, Gat-to-Sourc Voltag (V) T j, Junction Tmpratur ( o C) Fig 3. On-Rsistanc v.s. Gat Voltag Fig 4. Normalizd On-Rsistanc v.s. Junction Tmpratur I S () 2 T j =175 o C T j =25 o C V GS(th) (V) V SD, Sourc-to-Drain Voltag (V) T j,junction Tmpratur ( o C) Fig 5. Forward Charactristic of Fig 6. Gat Thrshold Voltag v.s. Rvrs Diod Junction Tmpratur 3

4 P85T3GH/J 14 1 f=1.mhz 12 I D =3 V GS, Gat to Sourc Voltag (V) V DS =15V V DS =2V V DS =24V C (pf) 1 C iss C oss C rss Q G, Total Gat Charg (nc) V DS,Drain-to-Sourc Voltag (V) Fig 7. Gat Charg Charactristics Fig 8. Typical Capacitanc Charactristics 1 1 I D () 1 1 T c =25 o C Singl Puls 1us 1ms 1ms 1ms DC Normalizd Thrmal Rspons (R thjc ).1 DUTY= Singl Puls P DM t T Duty factor = t/t Pak T j = P DM x R thjc + T C V DS, Drain-to-Sourc Voltag (V) t, Puls Width (s) Fig 9. Maximum Saf Oprating ra Fig 1. Effctiv Transint Thrmal Impdanc V DS 9% V G Q G 4.5V Q GS Q GD 1% V GS t d(on) t r t d(off)t f Charg Q Fig 11. Switching Tim Wavform Fig 12. Gat Charg Wavform 4

5 Packag Outlin : TO-252 DVNCED POWER ELECTRONICS CORP. D D1 E3 E2 E1 Millimtrs SYMBOLS MIN NOM MX B D D E F F E E C B1 F1 F 1.ll Dimnsions r in Millimtrs. 2.Dimnsion Dos Not Includ Mold Protrusions. 2 R :.127~ (.1mm C Part Marking Information & Packing : TO-252 Lasr Marking Part Numbr 85T3GH YWWSSS LOGO Packag Cod Mt Rohs rquirmnt for low voltag MOSFET only Dat Cod (YWWSSS) Y:Last Digit Of Th Yar WW:Wk SSS:Squnc 5

6 Packag Outlin : TO-251 DVNCED POWER ELECTRONICS CORP. D c1 SYMBOLS Millimtrs MIN NOM MX D E B E1 E B c c D B2 1 D E E B1 F E F c 1.ll Dimnsions r in Millimtrs. 2.Dimnsion Dos Not Includ Mold Protrusions. Part Marking Information & Packing : TO T3GJ YWWSSS LOGO Part Numbr Packag Cod mt Rohs rquirmnt for low voltag MOSFET only Dat Cod (YWWSSS) Y :Last Digit Of Th Yar WW :Wk SSS :Squnc If last "S" is numrical lttr : Rohs product If last "S" is English lttr : HF & Rohs product 6