Green. Features. Equivalent Circuit. Top View Pin Out Configuration. Part Number Case Packaging DMTH10H005SCT TO220AB 50 Pieces/Tube

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1 Green V +75 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary R DS(ON) I D T C = +25 C V GS = V 4A BV DSS Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications. Features Rated to +75 C Ideal for High Ambient Temperature Environments % Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low Input Capacitance High BV DSS Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes & 2) Halogen and Antimony Free. Green Device (Note 3) Applications Mechanical Data Motor Control Backlighting DC-DC Converters Power Management Functions Case: TO22AB Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-22, Method 28 Terminal Connections: See Diagram Below Weight:.85 grams (Approximate) TO22AB Top View Bottom View Equivalent Circuit Top View Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging TO22AB 5 Pieces/Tube Notes:. EU Directive 22/95/EC (RoHS) & 2/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking Information THH5S YYWW =Manufacturer s Marking THH5S = Product Type Marking Code YYWW = Date Code Marking YY or YY = Last Two Digits of Year (ex: 7 = 27) WW or WW = Week Code ( to 53) of 6 June 27

2 Maximum Ratings A = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V DSS V Gate-Source Voltage V GSS ±2 V Continuous Drain Current T C = +25 C 4 I D T C = + C 99 A Pulsed Drain Current (μs Pulse, Duty Cycle = %) I DM 4 A Maximum Continuous Body Diode Forward Current T C = +25 C I S A Pulsed Body Diode Forward Current (μs Pulse, Duty Cycle = %) I SM 4 A Avalanche Current, L = 3mH (Note 7) I AS 9 A Avalanche Energy, L = 3mH (Note 7) E AS 542 mj Avalanche Current, L =.mh I AS 25 A Avalanche Energy, L =.mh E AS 3.2 mj Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T A = +25 C P D 2.9 W Thermal Resistance, Junction to Ambient (Note 5) R θja 5 C/W Total Power Dissipation T C = +25 C P D 87 W Thermal Resistance, Junction to Case R θjc.8 C/W Operating and Storage Temperature Range T J, T STG -55 to +75 C Electrical Characteristics (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS V V GS = V, I D = ma Zero Gate Voltage Drain Current I DSS µa V DS = 8V, V GS = V Gate-Source Leakage I GSS ± na V GS = ±2V, V DS = V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V GS(TH) 2 4 V V DS = V GS, I D = 25µA Static Drain-Source On-Resistance R DS(ON) mω V GS = V, I D = 3A Diode Forward Voltage V SD.3 V V GS = V, I S = 3A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C ISS 8,474 V pf DS = 5V, V GS = V Output Capacitance C OSS,68 f = MHz Reverse Transfer Capacitance C RSS 78 Gate Resistance R g.4 Ω V DS = V, V GS = V, f = MHz Total Gate Charge Q G.7 Gate-Source Charge Q GS 28.9 nc V DD = 5V, I D = 3A, V GS = V Gate-Drain Charge Q GD 2.3 Turn-On Delay Time t D(ON) 29.9 Turn-On Rise Time t R 3.3 Turn-Off Delay Time t D(OFF) 79.7 ns Turn-Off Fall Time t F 4.6 Reverse Recovery Time t RR 7 ns Reverse Recovery Charge Q RR 8 nc V DD = 5V, V GS = V, I D = 3A, R g = 6Ω I F = 3A, di/dt = A/µs Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 June 27

3 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (mω) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (mω) V GS =.V V GS = 8.V V GS = 6.V V GS = 4.5V V DS = 5.V T J = 75 T J = T J = V GS = 4.V V GS = 3.4V V GS = 3.6V V GS = 3.8V V DS, DRAIN-SOURCE VOLTAGE (V) Figure.Typical Output Characteristic 5 T J = 25 T J = -55 T J = V GS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic V GS = 6.V V GS = V 5 I D = 3A I D, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage V GS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic.2. V GS =V T J = 5 T J = V GS = V, I D = 3A T J = 25 T J = 85 T J = 25 T J = V GS = 6.V, I D = 3A Figure 5. Typical On-Resistance vs. Drain Current and Temperature T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Temperature 3 of 6 June 27

4 V GS (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) V GS(TH), GATE THRESHOLD VOLTAGE (V) V GS = 6.V, I D = 3A I D = 25μA I D = ma.4 V GS = V, I D = 3A T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Temperature T J, JUNCTION TEMPERATURE ( ) Figure 8. Gate Threshold Variation vs. Temperature 3 25 V GS = V f=mhz C iss 2 5 C oss 5 T J = 75 T J = 85 T J = 5 T J = 25 T J = 25 T J = V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current C rss V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Junction Capacitance R DS(ON) LIMITED P W =µs 8 6 P W =μs P W =µs 4 2 V DS = 5V, I D = 3A Qg (nc) Figure. Gate Charge. P W =ms T J(MAX) =75 T C =25 P W =ms Single Pulse P W =ms DUT on infinite heatsink P W =s V GS =V. V DS, DRAIN-SOURCE VOLTAGE (V) Figure 2. SOA, Safe Operation Area 4 of 6 June 27

5 r(t), TRANSIENT THERMAL RESISTANCE D=.5 D=.3 D=.7 D=.9. D=. D=.5. D=.2 D=.. D=.5 D=Single Pulse E-6 E t, PULSE DURATION TIME (sec) Figure 3. Transient Thermal Resistance R θjc (t) = r(t) * R θjc R θjc =.7 /W Duty Cycle, D = t / t2 Package Outline Dimensions Please see for the latest version. TO22AB D L Q D b2 e E E/2 Ø P L2 L b H A A2 c A H E D2 TO22AB Dim Min Max Typ A A A b b c D D D e e E E H L L L P Q All Dimensions in mm e 5 of 6 June 27

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