AP2311GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.

Transcription

1 Halogen-Free Product dvanced Power P-CHNNEL ENHNCEMENT MODE Electronics Corp POWER MOSFET Simple Drive Requirement D BV DSS -6V Small Package Outline R DS(ON) mω Surface Mount Device I D - S RoHS Compliant & Halogen-Free SOT-3 G Description D dvanced Power MOSFETs from PEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness G The SOT-3 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such S as DC/DC converters bsolute Maximum Ratings@T j = o C(unless otherwise specified) V DS V GS Symbol Parameter Drain-Source Voltage Gate-Source Voltage I = I =7 I DM Continuous Drain Current 3 Rating Continuous Drain Current 3 - Pulsed Drain Current - P = Total Power Dissipation 3 Linear Derating Factor T STG Storage Temperature Range - to T J Operating Junction Temperature Range - to Units V V W W/ Thermal Data Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 9 /W Data and specifications subject to change without notice

2 Electrical j = o C(unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =-u V ΔBV DSS /ΔT j Breakdown Voltage Temperature Coefficient Reference to, I D =-m V/ R DS(ON) Static Drain-Source On-Resistance V GS =-V, I D =- - mω V GS =-V, I D =- - 3 mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =-u V g fs Forward Transconductance V DS =-V, I D =- - - S I DSS Drain-Source Leakage Current V DS =-6V, V GS =V u Drain-Source Leakage Current (T j =7 o C) V DS =-V, V GS =V u I GSS Gate-Source Leakage V GS =+V n Q g Total Gate Charge I D =- - 6 nc Q gs Gate-Source Charge V DS =-V - - nc Q gd Gate-Drain ("Miller") Charge V GS =-V nc t d(on) Turn-on Delay Time V DS =-3V - - ns t r Rise Time I D =- - - ns t d(off) Turn-off Delay Time R G =33Ω,V GS =-V - - ns t f Fall Time R D =3Ω ns C iss Input Capacitance V GS =V - pf C oss Output Capacitance V DS =-V - - pf C rss Reverse Transfer Capacitance f=mhz - - pf R g Gate Resistance f=mhz Ω Source-Drain Diode Symbol Parameter Test Conditions Min Typ Max Units V SD Forward On Voltage I S =-, V GS =V V t rr Reverse Recovery Time I S =-, V GS =V, ns Q rr Reverse Recovery Charge di/dt=/µs nc Notes: Pulse width limited by Max junction temperature Pulse width <3us, duty cycle <% 3Surface mounted on in copper pad of FR board, t <sec ; 7 /W when mounted on Min copper pad THIS PRODUCT IS SENSITIVE TO ELECTROSTTIC DISCHRGE, PLESE HNDLE WITH CUTION USE OF THIS PRODUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZED PEC DOES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY NY LICENSE UNDER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PRODUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR DESIGN

3 -I D, Drain Current () 7 T = o C -V -7V -V -V V G = -3V -I D, Drain Current () T = o C -V -7V -V -V V G = - 3 V Fig Typical Output Characteristics Fig Typical Output Characteristics I D =- T = o C 6 I D =- V G =-V R DS(ON) (mω) 3 Normalized R DS(ON) 6 - -V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3 On-Resistance vs Gate Voltage Fig Normalized On-Resistance vs Junction Temperature 3 -I S () T j = o C T j = o C Normalized V GS(th) 6 -V SD, Source-to-Drain Voltage (V) - T j, Junction Temperature ( o C) Fig Forward Characteristic of Fig 6 Gate Threshold Voltage vs 3

4 f=mhz -V GS, Gate to Source Voltage (V) 6 I D =- V DS = - V C (pf) C iss C oss C rss 6 Q G, Total Gate Charge (nc) Fig 7 Gate Charge Characteristics Fig Typical Capacitance Characteristics Duty factor= -I D () T = o C Single Pulse us ms ms ms s DC Normalized Thermal Response (R thja ) Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thja + T a R thja = 7 /W t, Pulse Width (s) Fig 9 Maximum Safe Operating rea Fig Effective Transient Thermal Impedance V DS =-V V G -I D, Drain Current () 6 T j = o C T j = o C -V Q GS Q G Q GD Charge Q 3 6 -V GS, Gate-to-Source Voltage (V) Fig Transfer Characteristics Fig Gate Charge Circuit

5 MRKING INFORMTION P3GN-HF Part Number : NG NGSS Date Code : SS SS:,, SS:3,7, SS:,6, SS:,,9