WPM2005 Power MOSFET and Schottky Diode

Transcription

1 WPM5 Power MOSFET and Schottky Diode Features Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low V F Schottky Applications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products DFN3-8L C D 8 MOSFET MAXIMUM RATINGS (T J = 5 unless otherwise noted) Parameter Symbol Value Units Drain to Source Voltage V DS V Gate to Source Voltage V GS ±8. V Continuous Drain Current (Note ) Power Dissipation (Note ) Steady State T J = 5 C I D.9 A T J = 85 C.8 t 5 s T J = 5 C 3.7 Steady P D.4 W State T J = 5 C t 5 s. Pulsed Drain Current t p = s I DM 3 A Operating Junction and Storage Temperature T J, T STG 55 to 5 Source Current (Body Diode) I S.7 A Lead Temperature for Soldering Purposes (/8 from case for s) C T L 6 C pin connections: 8 A C 7 A C 6 S D 3 G D 4 5 Marking: JA. Surface Mounted on FR4 Board using in sq pad size, oz Cu. SCHOTTKY DIODE MAXIMUM RATINGS(T J = 5 unless otherwise noted) Parameter Symbol Limits Unit J = Specific Device Code A = Date Code Peak repetitive reverse voltage V RRM V. DC Blocking voltage V R V Average rectified forward current I F A Order information Part Number Package Shipping WPM5 8/TR DFN3*- 8 3 Tape & Reel L Page Rev 3.5

2 THERMAL RESISTANCE RATINGS WPM5 MOSFET ELECTRICAL CHARACTERISTICS(T J =5 unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS = V,I D = -5 A - V Zero Gate Voltage Drain Current I DSS V DS =-6V,V GS = V - A Gate Source leakage current I GSS V GS = 8V,V DS = V na On Characteristics Gate Threshold Voltage V GS(th) V GS = V DS, I D =-5 A V Static Drain-Source V GS = -4.5V, I D = -.7A m R On-Resistance DS(on) V GS = -.5V,I D = -.A 6 m Forward Transconductance g FS V DS = -V, I D = -.7A 7. S Dynamic Characteristics Input Capacitance C iss 7 pf V Output Capacitance C DS = -V, V GS = V, oss 5 pf f =. MHz Reverse Transfer Capacitance C rss 9 pf Switching Characteristics Turn-On Delay Time t d(on) ns Turn-On Rise Time t r V GS = -4.5V, V DD = -V, ns Turn-Off Delay Time t d(off) I D = -.A, R G =6., 6 ns Turn-Off Fall Time t f 3 ns Total Gate Charge Q G(TOT) nc Threshold gate charge Q G(TH) V DS = -V,I D = -.7A,.4 nc Gate-Source Charge Q GS V GS =-4.5V.4 nc Gate-Drain Charge Q GD.9 nc Drain-Source Diode Characteristics and Maximun Ratings Forward Diode Voltage V SD V GS = V,I S = -.5A -.5 V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 5 C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V F.45 I F =A V V F.48 I F =.5A V F3.575 I F =A Reverse current I R A V R =V I R A V R =V Welding temperature curve Parameter Symbol Max Units Junction to Ambient Steady State (Note ) R JA 89 C/W Junction to Ambient t 5 s (Note ) R JA 57 C/W. Surface Mounted on FR4 Board using in sq pad size, oz Cu. MSL= Page Rev 3.5

3 Typical Characteristics (T J = 5 C unless otherwise noted) Output Characteristics Transfer Characteristics V GS =-5thru -3V TC =--55_C 8 -.5V 8 5_C -- Drain Current (A) 6 4 -V -- Drain Current (A) 6 4 5_C -ID -.5V -I D V DS -- Drain-to-Source Voltage (V) V GS -- Gate-to-Source Voltage (V).6 On-Resistance vs. Drain Current 8 Capacitance V GS =-.8V r DS(on) -- On-Resistance ( ) V GS =-.5V V GS =-4.5V C -- Capacitance (pf) 6 4 C iss C oss I D -- Drain Current (A) C rss V DS -- Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature Gate-to-Source Voltage (V) -V GS 4 3 V DS =-V I D =-.7A r DS(on) -- On-Resistance ( ) (Normalized) V GS =-4.5V I D =-.7A Q g -- Total Gate Charge (nc) T J -- Junction Temperature (_C) Page 3 Rev 3.5

4 Source-Drain Diode Forward Voltage.4 On-Resistance vs. Gate-to-Source Voltage -- Source Current (A) -I S T J = 5_C T J =5_C r DS(on) -- On-Resistance ( ).3. I D =-.7A V SD --Source-to-DrainVoltage(V) -V GS -- Gate-to-Source Voltage (V).4 Threshold Voltage 5 Single Pulse Power.3 I D =-5 ma 4 Variance (V) -V GS(th).. Power (W) T J -- Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle =.5. Notes:.5 P DM. t t. Duty Cycle, D = t t. Per Unit Base = R thja =89_C/W Single Pulse 3. T JM - T A =P DM Z (t) thja 4. Surface Mounted Square Wave Pulse Duration (sec) Page 4 Rev 3.5

5 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = Single Pulse Square Wave Pulse Duration (sec) Reverse Current vs. Junction Temperature 5 Forward Voltage Drop -- Reverse Current (ma). V V -- Forward Current (A) T J = 5_C T J =5_C I R. I F T J -- Junction Temperature (_C) V F -- Forward Voltage Drop (V) 5 Capacitance -- Junction Capacitance (pf) C T V KA -- Reverse Voltage (V) Page 5 Rev 3.5

6 Power Dissipation Characteristics. The package of WPM5 is DFN3x-8L, surface mounted on FR4 Board using in sq pad size oz Cu R JA is 89 /W.. The power dissipation P D is based on T J(MAX) =5 C, and the relation between T J and P D is T J = T a + R JA * P D, the maximum power dissipation is determined by R JA. 3. The R JA is the thermal impedance from junction to ambient, using larger PCB pad size can get smaller R JA and result in larger maximum power dissipation. 89 /W when mounted on a in pad of oz copper. Page 6 Rev 3.5

7 DFNWB3X-8L(P.65T.75/.85) PACKAGE OUTLINE DIMENSIONS Top View Bottom View Side View Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A.7/.8.8/.9.8/.3.3/.35 A..5.. A D E D E k.3min..min. b e.65typ..6typ. L Page 7 Rev 3.5

8 DFN 3X-8L PCB Layout Guide Page 8 Rev 3.5