ZXMP3A17E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = -30V; R DS(ON) = 0.07 DESCRIPTION FEATURES APPLICATIONS PINOUT
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1 ZXMP3A7E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = -30V; R DS(ON) = 0.07 I D = -4.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23-6 Low on-resistance Fast switching speed Low threshold Low gate drive SOT23-6 package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION PINOUT DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP3A7E6TA 7 8mm 3000 units ZXMP3A7E6TC 3 8mm 0000 units DEVICE MARKING 37 Top View
2 ZXMP3A7E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate Source Voltage V GS 20 V Continuous Drain Current V GS =0V; T A =25 C (b) V GS =0V; T A =70 C (b) V GS =0V; T A =25 C (a) I D Pulsed Drain Current (c) I DM -4.4 A Continuous Source Current (Body Diode) (b) I S -2.5 A Pulsed Source Current (Body Diode) (c) I SM -4.4 A Power Dissipation at T A =25 C (a) Linear Derating Factor Power Dissipation at T A =25 C (b) Linear Derating Factor P D. 8.8 P D Operating and Storage Temperature Range T j :T stg -55 to +50 C A W mw/ C W mw/ C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θja 3 C/W Junction to Ambient (b) R θja 73 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 0 s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 2
3 ZXMP3A7E6 CHARACTERISTICS 0 R DS(ON) Limited DC s 00m 00ms 0ms ms 00us 0m Single Pulse, T amb =25 C 0. 0 Drain-Source Voltage (V) P-channel Safe Operating Area Max Power Dissipation (W) Temperature ( C) Derating Curve Thermal Resistance ( C/W) D=0.5 Single Pulse 40 D=0.2 D= D= µ m 0m 00m 0 00 k Pulse Width (s) Transient Thermal Impedance MaximumPower (W) 00 0 Single Pulse T amb =25 C 00µ m 0m 00m 0 00 k Pulse Width (s) Pulse Power Dissipation 3
4 ZXMP3A7E6 ELECTRICAL CHARACTERISTICS (at T A = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V I D =-250 A, V GS =0V Zero Gate Voltage Drain Current I DSS -0.5 A V DS =-30V, V GS =0V Gate-Body Leakage I GSS 00 na V GS = 20V, V DS =0V Gate-Source Threshold Voltage V GS(th) -0.8 V I =-250 A, V D DS =V GS Static Drain-Source On-State Resistance () R DS(on) V GS =-0V, I D =-3.2A V GS =-4.5V, I D =-2.5A Forward Transconductance ()(3) g fs 6.4 S V DS =-5V,I D =-3.2A DYNAMIC (3) Input Capacitance C iss 630 pf Output Capacitance C oss 3 pf V DS =-5V, V GS =0V, f=mhz Reverse Transfer Capacitance C rss 78 pf SWITCHING(2) (3) Turn-On Delay Time t d(on).74 ns Rise Time t r 2.87 ns Turn-Off Delay Time t d(off) 29.2 ns Fall Time t f 8.72 ns V DD =-5V, I D =-A R G =6.0, V GS =-0V Gate Charge Q g 8.28 nc V DS =-5V,V GS =-5V, I D =-3.2A Total Gate Charge Q g 5.8 nc Gate-Source Charge Q gs.84 nc Gate-Drain Charge Q gd 2.8 nc SOURCE-DRAIN DIODE V DS =-5V,V GS =-0V, I D =-3.2A Diode Forward Voltage () V SD V T J =25 C, I S =-2.5A, V GS =0V Reverse Recovery Time (3) t rr 9.5 ns T J =25 C, I F =-.7A, Reverse Recovery Charge (3) Q rr 6.3 nc di/dt= 00A/µs NOTES () Measured under pulsed conditions. Width=300µs. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. 4
5 ZXMP3A7E6 TYPICAL CHARACTERISTICS T = 25 C 0V 5V 4V 3.5V 3V 2.5V V Drain-Source Voltage (V) Output Characteristics T = 50 C 0V 5V 4V 3.5V 3V 2.5V 2V V Drain-Source Voltage (V) Output Characteristics 0 T = 50 C T = 25 C 0. = 0V Gate-Source Voltage (V) Typical Transfer Characteristics Normalised R DS(on) and V GS(th) V GS = -0V I D = -3.2A R DS(on) V GS(th) 0.8 V GS =V DS I D = -250uA Tj Junction Temperature ( C) Normalised Curves v Temperature R DS(on) Drain-Source On-Resistance (Ω) V 2.5V T = 25 C 3V V 4V 5V 0V On-Resistance v Drain Current -I SD Reverse 0 T = 50 C T = 25 C V SD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5
6 ZXMP3A7E6 TYPICAL CHARACTERISTICS C Capacitance (pf) C ISS C OSS C RSS V GS =0V f=mhz Drain-SourceVoltage(V) Capacitance v Drain-Source Voltage Gate-Source Voltage (V) 0 I D = -3.2A V DS = -5V Q - Charge (nc) Gate-SourceVoltagevGateCharge 6
7 ZXMP3A7E6 PACKAGE OUTLINE PAD LAYOUT DETAILS b e L 2 E E e D a DATUM A C A A2 A CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS DIM Millimetres Inches Millimetres Inches DIM Min Max Min Max Min Max Min Max A E A E A L b e 0.95 REF REF C e.90 REF REF D L Zetex plc 2002 Europe Americas Asia Pacific Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) Fax: (44) uk.sales@zetex.com Zetex GmbH Streitfeldstraße 9 D-8673 München Germany Telefon: (49) Fax: (49) europe.sales@zetex.com Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY788 USA Telephone: (63) Fax: (63) usa.sales@zetex.com Zetex (Asia) Ltd Metroplaza, Tower Hing Fong Road Kwai Fong Hong Kong Telephone: (852) Fax: (852) asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to 7
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