Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

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1 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D BVDSS RDSON ID 60V 1.6Ω 0.3A Features 60V,0.3A, RDS(ON) =1.6Ω@VGS=10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available G-S ESD Protection Diode Embedded D G S G S Applications Motor Drive Power Tools LED Lighting Absolute Maximum Ratings Tc=25 unless otherwise noted Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V I D Drain Current Continuous (T C =25 ) 0.3 A Drain Current Continuous (T C =100 ) 0.2 A I DM Drain Current Pulsed A P D Power Dissipation (T C =25 ) 0.35 W Power Dissipation Derate above W/ T STG Storage Temperature Range -50 to 150 T J Operating Junction Temperature Range -50 to 150 Thermal Characteristics Symbol Parameter Typ. Max. Unit R θja Thermal Resistance Junction to ambient /W 1

2 Electrical Characteristics (T J =25, unless otherwise noted) Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V, I D =250uA V BV DSS / T J BV DSS Temperature Coefficient Reference to 25, I D =1mA V/ I DSS V DS =60V, V GS =0V, T J = ua Drain-Source Leakage Current V DS =48V, V GS =0V, T J = ua I GSS Gate-Source Leakage Current V GS =±20V, V DS =0V ±10 ua On Characteristics R DS(ON) Static Drain-Source On-Resistance V GS =10V, I D =0.5A Ω V GS =4.5V, I D =0.2A Ω V GS(th) Gate Threshold Voltage V GS =V DS, I D =250uA V V GS(th) V GS(th) Temperature Coefficient mv/ gfs Forward Transconductance V DS =10V, I D =0.1A S Dynamic and switching Characteristics Q g Total Gate Charge 2, Q gs Gate-Source Charge 2, 3 V DS=30V, V GS=10V, I D =0.2A Q gd Gate-Drain Charge 2, T d(on) Turn-On Delay Time 2, T r Rise Time 2, 3 V DD=30V, V GS=10V, R G =6Ω T d(off) Turn-Off Delay Time 2, 3 I D =0.2A T f Fall Time 2, C iss Input Capacitance C oss Output Capacitance V DS =10V, V GS =0V, F=1MHz C rss Reverse Transfer Capacitance nc ns pf Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current V G =V D =0V, Force Current A I SM Pulsed Source Current A V SD Diode Forward Voltage V GS =0V, I S =1A, T J = V t rr Reverse Recovery Time 2 VGS=30V,IS=1A, di/dt=100a/µs ns Q rr Reverse Recovery Charge 2 T J = nc Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. V DD =25V,V GS =10V,L=1mH,I AS =7A.,RG=25Ω,Starting TJ=25 3. The data tested by pulsed, pulse width 300us, duty cycle 2%. 4. Essentially independent of operating temperature. 2

3 Fig.1 Output Characteristics T C, Case Temperature ( ) Fig.2 Continuous Drain Current vs. T C Normalized On Resistance (Ω) Normalized Gate Threshold Voltage (V) T J, Junction Temperature ( ) Fig.3 Normalized RDSON vs. T J T J, Junction Temperature ( ) Fig.4 Normalized V th vs. T J VGS, Gate to Source Voltage (V) C, Capacitance (pf) Qg, Gate Charge (nc) Fig.5 Gate Charge Waveform Fig.6 Capacitance Characteristics 3

4 Normalized Thermal Response (RθJA) Square Wave Pulse Duration (s) Fig.7 Normalized Transient Impedance Fig.8 Maximum Safe Operation Area V DS 90% EAS= BV DSS 1 2 L x I AS 2 x BV DSS BV DSS -V DD V DD 10% I AS V GS T d(on) T r T d(off) T f T on T off V GS Fig.9 Switching Time Waveform Fig.10 EAS Waveform 4

5 SOT23-3S PACKAGE INFORMATION Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A A b c D E E e TYP TYP. e L REF REF. L θ