ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO =

Transcription

1 DUAL 6 NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: CEO =6; I C = ; h FE =1-3 PNP: CEO =-6; I C = -; h FE =1-3 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES Low Equivalent On Resistance - NPN R CE(sat) 21mΩ at - PNP R CE(sat) 355mΩ at - C2 C1 Low Saturation h FE characterised up to 2A I C = Continuous Collector Current B2 B1 SOT23-6 package APPLICATIONS MOSFET gate driver Low Power Motor Drive E2 E1 Low Power DC-DC Converters ORDERING INFORMATION DEICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL C1 B1 C E1 B2 E2 ZXTD4591E6TA 7 8mm embossed 3 units Top iew ZXTD4591E6TC 13 8mm embossed 1 units DEICE MARKING 4591 ISSUE 1 - JULY 2 1

2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT NPN LIMIT PNP UNIT Collector-Base CBO 8-8 Collector-Emitter CEO 6-6 Emitter-Base EBO 5-5 Peak Pulse Current I CM 2-2 A Continuous Collector Current I C 1-1 A Base Current I B 5-5 ma Power Dissipation at TA=25 C (a) Linear Derating Factor P D W mw/ C Power Dissipation at TA=25 C (b) Linear Derating Factor P D W mw/ C Operating and Storage Temperature Range T j :T stg -55 to to +15 C THERMAL RESISTANCE PARAMETER SYMBOL ALUE UNIT Junction to Ambient (a) R θja 113 C/W Junction to Ambient (b) R θja 73 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. ISSUE 1 - JULY 2 2

3 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated). ZXTD4591E6 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Collector-Emitter Breakdown (BR)CBO -8 I C =-1 A (BR)CEO -6 I C =-1mA* Emitter-Base Breakdown (BR)EBO -5 I E =-1 A Collector Cut-Off Current I CBO -1 na CB =-6 Emitter Cut-Off Current I EBO -1 na EB =-4 Collector Emitter Cut-Off Current I CES -1 na CES =-6 Collector-Emitter Saturation I C =-5mA, I B =-5mA* I C =-, I B =-1mA* Base-Emitter Saturation BE(sat) -1.2 I C =-, I B =-1mA* Base-Emitter Turn-On BE(on) -1. I C =-, CE =-5* Static Forward Current Transfer Ratio h FE I C =-, CE =-5* I C =-5mA, CE =-5* I C =-, CE =-5* I C =-2A, CE =-5* Transition Frequency f T 15 MHz I C =-5mA, CE =-1 f=1mhz Output Capacitance C obo 1 pf CB =-1, f=1mhz *Measured under pulsed conditions. Pulse width=3µs. Duty cycle 2% ISSUE 1 - JULY 2 3

4 NPN ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated). ZXTD4591E6 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Collector-Emitter Breakdown (BR)CBO 8 I C =1 A (BR)CEO 6 I C =1mA* Emitter-Base Breakdown (BR)EBO 5 I E =1 A Collector Cut-Off Current I CBO 1 na CB =6 Emitter Cut-Off Current I EBO 1 na EB =4 Collector Emitter Cut-Off Current I CES 1 na CES =6 Collector-Emitter Saturation.25.5 I C =5mA, I B =5mA* I C =, I B =1mA* Base-Emitter Saturation BE(sat) 1.1 I C =, I B =1mA* Base-Emitter Turn-On BE(on) 1. I C =, CE =5* Static Forward Current Transfer Ratio h FE I C =, CE =5* I C =5mA, CE =5* I C =, CE =5* I C =2A, CE =5* Transition Frequency f T 15 MHz I C =5mA, CE =1 f=1mhz Output Capacitance C obo 1 pf CB =1, f=1mhz *Measured under pulsed conditions. Pulse width=3µs. Duty cycle 2% ISSUE 1 - JULY 2 4

5 NPN TYPICAL CHARACTERISTICS ZXTD4591E6.6.6 IC/IB= IC/IB=1 IC/IB= C +1 C.1.1 1mA 1mA 1mA 1mA IC/IB=1 h FE - Typical Gain C -55 C BE(sat) C 1mA 1mA 1mA 1mA hfe IC BE(sat) vic BE(on) C +1 C I C -Collector Current (A) DC 1s 1ms 1ms 1ms 1µs 1mA 1mA BE(on) vic CE - Collector Emitter () Safe Operating Area ISSUE 1 - JULY 2 5

6 PNP TYPICAL CHARACTERISTICS.6.6 IC/IB= IC/IB=1 IC/IB= C.1.1 1mA 1mA 1mA 1mA 4 IC/IB=1 1. h FE -TypicalGain C BE(sat) C 1mA 1mA 1mA 1mA hfe IC BE(sat) vic BE(on) C I C -Collector Current (A) 1.1 DC 1s 1ms 1ms 1ms 1us 1mA 1mA CE - Collector Emitter () BE(on) vic Safe Operating Area ISSUE 1 - JULY 2 6

7 PACKAGE DIMENSIONS PAD LAYOUT DETAILS b e L 2 E E1 e1 D a DATUM A C A A2 A1 DIM Millimetres Inches Min Max Min Max A A A b C D E E L e.95 REF.37 REF e1 1.9 REF.74 REF L 1 1 ISSUE 1 - JULY 2 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44) (Sales), (44) (General Enquiries) Fax: (44) Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße Mall Drive, Unit Metroplaza, Tower 1 agents and distributors in D München Commack NY Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong Zetex plc 2 Telefon: (49) Telephone: (631) Telephone:(852) Fax: (49) Fax: (631) Fax: (852) Internet: This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 7