COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS = -1.25A;

Transcription

1 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: V CEO =15V; V CE(sat) =.1V; I C = 1.5A; PNP: V CEO =-12V; V CE(sat) =-.1V; I C = -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation traistor housed in the SOT23-6 package. Users benefit from very efficient performance combining a high current operation, exceptionally low V CE(sat) and high H FE resulting in extremely low on state losses. This dual traistor is ideal for use in a variety of efficient driving functio including motors, lamps, relays and solenoids and will also benefit circuits requiring high output current switching. SOT23-6 FEATURES Low Saturation C2 C1 R CE(sat) values NPN =135mΩ at 1.5A - PNP =15mΩ at 1.25A h FE min 2 at 1A B2 B1 I C =1.5A Continuous (NPN), 1.25A (PNP) SOT23-6 package with P D = 1.1W E2 E1 APPLICATIONS Various driving functio Lamps Motors Relays and solenoids High output current switches ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXTD6717E6TA 7 8mm embossed 3 units ZXTD6717E6TC 13 8mm embossed 1 units Top View DEVICE MARKING 6717 ISSUE 2 - JULY 21 1

2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT NPN LIMIT PNP UNIT Collector-Base V CBO V Collector-Emitter V CEO V Emitter-Base V EBO 5-5 V Peak Pulse Current I CM 5-3 A Continuous Collector Current I C A Base Current I B 2-2 ma Power Dissipation at TA=25 C (a) Linear Derating Factor P D W mw/ C Power Dissipation at TA=25 C (b) Linear Derating Factor P D W mw/ C Operating and Storage Temperature Range T j :T stg -55 to to +15 C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θja 125 C/W Junction to Ambient (b) R θja 45 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditio (b) For a device surface mounted on FR4 PCB measured at t 5 secs. 2 ISSUE 2 - JULY 21

3 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated). ZXTD6717E6 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Collector-Emitter Breakdown V (BR)CBO 15 V I C =1 A V (BR)CEO 15 V I C =A* Emitter-Base Breakdown V (BR)EBO 5 V I E =1 A Collector Cut-Off Current I CBO 1 na V CB =1V Emitter Cut-Off Current I EBO 1 na V EB =4V Collector Emitter Cut-Off Current I CES 1 na V CES =1V Collector-Emitter Saturation V CE(sat) I C =A, I B =A* I C =25mA, I B =A* I C =5mA, I B =A* I C =1A, I B =A* I C =1.5A, I B =2mA* Base-Emitter Saturation V BE(sat) V I C =1.5A, I B =2mA* Base-Emitter Turn-On V BE(on) V I C =1.5A, V CE =2V* Static Forward Current Trafer Ratio h FE I C =A, V CE =2V* I C =A, V CE =2V* I C =5mA, V CE =2V* I C =1A, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* Traition Frequency f T 18 MHz I C =5mA, V CE =1V f=1mhz Output Capacitance C obo 15 pf V CB =1V, f=1mhz Turn-On Time Turn-Off Time t (on) 5 t (off) 25 I C =1A, V CC =1V I B1 =I B2 =A *Measured under pulsed conditio. Pulse width=3µs. Duty cycle 2% ISSUE 2 - JULY 21 3

4 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Collector-Emitter Breakdown V (BR)CBO -12 V I C =-1 A V (BR)CEO -12 V I C =-A* Emitter-Base Breakdown V (BR)EBO -5 V I E =-1 A Collector Cut-Off Current I CBO -1 na V CB =-1V Emitter Cut-Off Current I EBO -1 na V EB =-4V Collector Emitter Cut-Off Current I CES -1 na V CES =-1V Collector-Emitter Saturation V CE(sat) I C =-A, I B =-A* I C =-25mA, I B =-A* I C =-5mA, I B =-A* I C =-1A, I B =-5mA* I C =-1.25A, I B =-A* Base-Emitter Saturation V BE(sat) V I C =-1.25A, I B =-A* Base-Emitter Turn-On V BE(on) V I C =-1.25A, V CE =-2V* Static Forward Current Trafer Ratio h FE I C =-A, V CE =-2V* I C =-A, V CE =-2V* I C =-5mA, V CE =-2V* I C =-1.25A, V CE =-2V* I C =-2A, V CE =-2V* I C =-3A, V CE =-2V* Traition Frequency f T 22 MHz I C =-5mA, V CE =-1V f=1mhz Output Capacitance C obo 15 pf V CB =-1V, f=1mhz Turn-On Time Turn-Off Time t (on) 5 t (off) 135 I C =-1A, V CC =-1V I B1 =I B2 =-A *Measured under pulsed conditio. Pulse width=3µs. Duty cycle 2% ISSUE 2 - JULY 21 4

5 NPN TYPICAL CHARACTERISTICS ZXTD6717E6.4.4 IC/IB= IC/IB=1 IC/IB=5 IC/IB= C +1 C +15 C IC -CollectorCurrent(A) 8 VCE=2V 1. IC/IB=5 hfe - Typical Gain C VBE(sat) -(V) C +15 C IC -CollectorCurrent(A) hfe vic VBE(sat) vic 1. 1 VBE(on) -(V) C +1 C +15 C VCE - Collector Emitter (V) VBE(on) vic Safe Operating Area 1 DC 1s s s s 1us ISSUE 2 - JULY 21 5

6 PNP TYPICAL CHARACTERISTICS C.4 IC/IB= IC/IB=1 IC/IB=5 IC/IB= C +15 C VCE=2V 1. IC/IB=5 hfe -TypicalGain C VBE(sat) -(V) C +15 C hfe vic VBE(sat) vic 1. 1 VBE(on) -(V) C +15 C VCE - Collector Emitter (V) VBE(on) vic Safe Operating Area 1 DC 1s s s s 1µs ISSUE 2 - JULY 21 6

7 PACKAGE DIMENSIONS PAD LAYOUT DETAILS b e L 2 E E1 e1 D a DATUM A C A A2 A1 DIM Millimetres Inches Min Max Min Max A A A b C D E E L e.95 REF.37 REF e1 1.9 REF.74 REF L 1 1 ISSUE 2 - JULY 21 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44) (Sales), (44) (General Enquiries) Fax: (44) Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße Mall Drive, Unit Metroplaza, Tower 1 agents and distributors in D München Commack NY Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong Zetex plc 21 Telefon: (49) Telephone: (631) Telephone:(852) Fax: (49) Fax: (631) Fax: (852) This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditio of supply of any product or service. 7