SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz

Transcription

1 SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol Parameter Ratings Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 6 V I C Collector Current.5 A P C Collector Power Dissipation W T J Junction Temperature 50 C T STG Storage Temperature -65 ~ 50 C Electrical Characteristics T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BV CBO Collector-Base Breakdown Voltage I C =00µA, I E =0 40 V BV CEO Collector-Emitter Breakdown Voltage I C =2mA, I B =0 25 V BV EBO Emitter-Base Breakdown Voltage I E =00µA, I C =0 6 V I CBO Collector Cut-off Current V CB =35V, I E =0 00 na I EBO Emitter Cut-off Current V EB =6V, I C =0 00 na h FE h FE2 DC Current Gain V CE =V, I C =5mA V CE =V, I C =00mA h FE3 V CE =V, I C =800mA 40 0 V CE (sat) Collector-Emitter Saturation Voltage I C =800mA, I B =80mA V V BE (sat) Base-Emitter Saturation Voltage I C =800mA, I B =80mA V V BE (on) Base-Emitter On Voltage V CE =V, I C =0mA 0.66 V C ob Output Capacitance V CB =0V, I E =0 9.0 pf f=mhz f T Current Gain Bandwidth Product V CE =0V, I C =50mA MHz h FE Classification Classification B C D h FE2 85 ~ ~ ~ 300

2 Typical Characteristics SS IB = 3.0mA IB = 2.5mA IB = 2.0mA IB =.5mA IB =.0mA IB = 0.5mA hfe, DC CURRENT GAIN 00 0 VCE = V VCE[V], COLLECTOR-EMITTER VOLTAGE Figure. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE VBE(sat) VCE(sat) IC = 0 IB VCE = V VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Cob [pf], CAPACITANCE 00 0 IE = 0 f = MHz 0 00 ft[mhz], CURRENT GAIN BANDWIDTH PRODUCT 00 0 VCE = 0V VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

3 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8050 Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol Parameter Ratings Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -6 V I C Collector Current -.5 A P C Collector Power Dissipation W T J Junction Temperature 50 C T STG Storage Temperature -65 ~ 50 C Electrical Characteristics T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BV CBO Collector-Base Breakdown Voltage I C = -00µA, I E =0-40 V BV CEO Collector-Emitter Breakdown Voltage I C = -2mA, I B =0-25 V BV EBO Emitter-Base Breakdown Voltage I E = -00µA, I C =0-6 V I CBO Collector Cut-off Current V CB = -35V, I E =0-00 na I EBO Emitter Cut-off Current V EB = -6V, I C =0-00 na h FE h FE2 DC Current Gain V CE = -V, I C = -5mA V CE = -V, I C = -00mA h FE3 V CE = -V, I C = -800mA V CE (sat) Collector-Emitter Saturation Voltage I C = -800mA, I B = -80mA V V BE (sat) Base-Emitter Saturation Voltage I C = -800mA, I B = -80mA V V BE (on) Base-Emitter on Voltage V CE = -V, I C = -0mA V C ob Output Capacitance V CB = -0V, I E =0 5 pf f=mhz f T Current Gain Bandwidth Product V CE = -0V, I C = -50mA MHz h FE Classification Classification B C D h FE2 85 ~ ~ ~ 300

4 Typical Characteristics -0.5 IB=-4.0mA 000 VCE = -V IB=-3.5mA IB=-3.0mA IB=-2.5mA IB=-2.0mA IB=-.5mA IB=-.0mA IB=-0.5mA hfe, DC CURRENT GAIN VCE[V], COLLECTOR-EMITTER VOLTAGE Figure. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VBE(sat) VCE(sat) IC=0IB VCE = -V VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Cob[pF], CAPACITANCE 00 0 f=mhz IE= ft[mhz], CURRENT GAIN-BANDWIDTH PRODUCT VCE=-0V VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

5 Package Dimensions MAX 0.46 ±0.0.27TYP [.27 ±0.20].02 ± TYP [.27 ±0.20] 3.60 ±0.20 (R2.29) (0.25) 4.47 ± ± Dimensions in Millimeters