Dual General Purpose Transistors

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DATA SHEET SEMICONDUCTOR Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications.

1 DATA SHEET SEMICONDUCTOR Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. H Q 2 Q 1 See Table SOT-363 /SC-88 CASE 419B STYLE1 MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit Collector Emitter Voltage V CEO V Collector Base Voltage V CBO V Emitter Base Voltage V EBO V Collector Current -Continuous madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P D 38 mw Per Device 25 mw FR 5 Board, (1) T A = 25 C Derate above 25 C 3. mw/ C Thermal Resistance, Junction to Ambient R θja 328 C/W Junction and Storage Temperature T J, T stg 55 to +15 C 1. FR 5 = x.75 x.62 in. ORDERING INFORMATION Device Package Shipping BC846BDW SOT Units/Reel BC847BDW SOT Units/Reel BC847CDW SOT Units/Reel BC848BDW SOT Units/Reel BC848CDW SOT Units/Reel 1 REV

2 ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V (BR)CEO V ( = 1 ma) BC846 Series 65 BC847 Series 45 BC848 Series 3 Collector Emitter Breakdown Voltage V (BR)CES V ( = 1 µa, V EB = ) BC846 Series 8 BC847 Series 5 BC848 Series 3 Collector Base Breakdown Voltage V (BR)CBO V ( = 1 µa) BC846 Series 8 BC847 Series 5 BC848 Series 3 Emitter Base Breakdown Voltage V (BR)EBO V (I E = µa) BC846 Series 6. BC847 Series 6. BC848 Series 5. Collector Cutoff Current (V CB = 3 V) BO 15 na (V CB = 3 V, T A = 15 C) 5. µa ON CHARACTERISTICS DC Current Gain h FE ( = 1 µa, V CE = 5. V) BC846B, BC847B, BC848B 15 BC847C, BC848C 27 ( = ma, V CE = 5. V) BC846B, BC847B, BC848B BC847C, BC848C Collector Emitter Saturation Voltage ( = 1 ma, I B =.5 ma) V CE(sat) 5 V Collector Emitter Saturation Voltage ( = 1 ma, I B = 5. ma).6 Base Emitter Saturation Voltage ( = 1 ma, I B =.5 ma) V BE(sat).7 V Base Emitter Saturation Voltage ( = 1 ma, I B = 5. ma).9 Base Emitter Voltage ( = ma, V CE = 5. V) V BE(on) mv Base Emitter Voltage ( = 1 ma, V CE = 5. V) 77 SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product f T 1 MHz ( = 1 ma, V CE = 5. Vdc, f = 1 MHz) Output Capacitance (V CB = 1 V, f = MHz) C obo 4.5 pf Noise Figure ( = ma, NF db V CE = 5. V dc, R S = kω, BC846B, BC847B, BC848B 1 f = khz, BW = 2 Hz) BC847C, BC848C REV

3 DEVICE CHARACTERISTICS TYPICAL CHARACTERISTICS h FE, NORMALIZED DC CURRENT GAIN V,VOLTAGE (VOLTS) , COLLECTOR CURRENT (madc) Figure 1. Normalized DC Current Gain, COLLECTOR CURRENT (madc) Figure 2. Saturation and On Voltages V CE, COLLECTOR-EMITTER VOLTAGE(V) θ vb, TEMPERATURE COEFFICIENT (mv/ C) I B, BASE CURRENT (ma) Figure 3. Collector Saturation Region Figure 4. Base Emitter Temperature Coefficient 3 REV

4 DEVICE CHARACTERISTICS TYPICAL CHARACTERISTICS C,CAPACITANCE(pF) V R, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances T f, CURREN-GAIN-BANDWIDTH PRODUCT (MHz) , COLLECTOR CURRENT (madc) Figure 6. Current Gain Bandwidth Product h FE, DC CURRENT GAIN (NORMALIZED) V, VOLTAGE (VOLTS) Figure 7. DC Current Gain Figure 8. On Voltage V CE, COLLECTOR-EMITTER VOLTAGE(VOLTS) I B, BASE CURRENT (ma) Figure 9. Collector Saturation Region θ VB, TEMPERATURE COEFFICIENT (mv/ C) Figure 1. Base Emitter Temperature Coefficient 4 REV

DEVICE CHARACTERISTICS D=.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED).1.1.1.5.2.

5 DEVICE CHARACTERISTICS D=.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SINGLE PULSE P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2 Z θja (t) = r(t) R θja R θja = 328 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) R θjc (t) K 1K 1K M t, TIME (ms) Figure 11. Thermal Response The safe operating area curves indicate V CE limits of thetransistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 12 is based upon T J(pk) = 15 C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 1% provided T J(pk) < 15 C. T J (pk) may be calculated from the data in Figure 12. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Active Region Safe Operating Area 5 REV

6 PACKAGE OUTLINE & DIMENSIONS SC-88/SOT-363 A G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH DIM INCHES MILLIMETERS MIN MAX MIN MAX A S B- B C D G.26 BSC.65 BSC D6 P L (.8) M N B M H J K N.8 REF REF J S C H K PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4.EMITTER 2 5. BASE 2 6.COLLECTOR 1.5 mm (min) mm (min).65 mm.65 mm 1.9 mm 6 REV

Dual Bias Resistor Transistors

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